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Reinhold H. Dauskardt

Publications and source records attributed to Reinhold H. Dauskardt.

2 recordsLinked to original sources

Machine Learning with Knowledge Constraints for Process Optimization of Open-Air Perovskite Solar Cell Manufacturing

Perovskite photovoltaics (PV) have achieved rapid development in the past decade in terms of power conversion efficiency of small-area lab-scale devices; however, successful commercialization still requires further development of low-cost, scalable, and high-throughput manufacturing techniques. One of the critical challenges of developing a new fabrication technique is the high-dimensional parameter space for optimization, but machine learning (ML) can readily be used to accelerate perovskite PV scaling. Herein, we present an ML-guided framework of sequential learning for manufacturing process optimization. We apply our methodology to the Rapid Spray Plasma Processing (RSPP) technique for perovskite thin films in ambient conditions. With a limited experimental budget of screening 100 process conditions, we demonstrated an efficiency improvement to 18.5% as the best-in-our-lab device fabricated by RSPP, and we also experimentally found 10 unique process conditions to produce the top-performing devices of more than 17% efficiency, which is 5 times higher rate of success than the control experiments with pseudo-random Latin hypercube sampling. Our model is enabled by three innovations: (a) flexible knowledge transfer between experimental processes by incorporating data from prior experimental data as a probabilistic constraint; (b) incorporation of both subjective human observations and ML insights when selecting next experiments; (c) adaptive strategy of locating the region of interest using Bayesian optimization first, and then conducting local exploration for high-efficiency devices. Furthermore, in virtual benchmarking, our framework achieves faster improvements with limited experimental budgets than traditional design-of-experiments methods (e.g., one-variable-at-a-time sampling).

cs.LG↗

Graphene as a p-type metal for ultimate miniaturization

We report macroscopic sheets of highly conductive bilayer graphene with exceptionally high hole concentrations of ~ $10^{15}$ $cm^{-2}$ and unprecedented sheet resistances of 20-25 Ω per square over macroscopic scales, and obtained in-situ over a thin cushion of molecular oxygen on a silicon substrate. The electric and electronic properties of this specific configuration remain stable upon thermal anneals and months of exposure to air. We further report a complementary ab-initio study, predicting an enhancement of graphene adhesion energy of up to a factor 20, also supported by experimental fracture tests. Our results show that the remarkable properties of graphene can be realized in a reliable fashion using a high-throughput process. In addition to providing exceptional material properties, the growth process we employed is scalable to large areas so that the outstanding conduction properties of graphene can be harnessed in devices fabricated via conventional semiconductor manufacturing processes. We anticipate that the approach will provide the necessary scalability and reliability for future developments in the graphene nanoscience and technology fields, especially in areas where further miniaturization is hampered by size effects and electrical reliability of classical conductors.

cond-mat.mtrl-sci↗