arXiv subjects

Reizo Kato

Publications and source records attributed to Reizo Kato.

29 records · Page 2Linked to original sources

arXiv2018

Conductivity and Resistivity of Dirac Electrons in Single-Component Molecular Conductor [Pd(dddt)_2]

Dirac electrons, which have been found in the single-component molecular conductor [Pd(dddt)_2] under pressure, are examined by calculating the conductivity and resistivity in terms of a tight-binding model for several pressures of P GPa, which give a nodal line semimetal or insulator. The temperature (T) dependence of the conductivity shows that the conductivity increases linearly under pressure at low T due to the Dirac cone but stays almost constant at high T. Further, at lower pressures, the conductivity is suppressed due to an unconventional gap, which is examined by calculating the resistivity. The resistivity exhibits a pseudogap-like behavior even in the case described by the Dirac cone. Such behavior originates from a novel role of the nodal line semimetal followed by a pseudogap that is different from a band gap. The present result reasonably explains the resistivity observed in the experiment.

cond-mat.str-el↗

arXiv2017

Novel Dirac Electron in Single-Component Molecular Conductor [Pd(dddt)$_2$]

Dirac electrons in a single-component molecular conductor [Pd(dddt)$_2$] under pressure have been examined using a tight-binding model which consists of HOMO (Highest Occupied Molecular Orbital) and LUMO (Lowest Unoccupied Molecular Orbital) functions in four molecules per unit cell. The Dirac cone between the conduction and valence bands comes from the property that HOMO has ungerade symmetry and LUMO has gerade symmetry. The Dirac point forms a loop in the three-dimensional Brillouin zone, which is symmetric with respect to the plane of $k_y$ = 0 where $k_y$ is the intralayer momentum along the molecular stacking direction, i.e., with the largest (HOMO-HOMO, LUMO-LUMO) transfer energy. The parity at TRIM (time reversal invariant momentum) is calculated using the inversion symmetry around the lattice point of the crystal. It is shown that such an exotic Dirac electron is understood from the parity of the wave function at the TRIM and also from an effective Hamiltonian.

cond-mat.mtrl-sci↗

arXiv2017

Critical Behavior in Doping-Driven Metal$-$Insulator Transition on Single-Crystalline Organic Mott-FET

We present the carrier transport properties in the vicinity of a doping-driven Mott transition observed at a field-effect transistor (FET) channel using a single crystal of the typical two-dimensional organic Mott insulator $κ$-(BEDT-TTF)$_2$CuN(CN)$_2$Cl ($κ$-Cl).The FET shows a continuous metal$-$insulator transition (MIT) as electrostatic doping proceeds. The phase transition appears to involve two-step crossovers, one in Hall measurement and the other in conductivity measurement. The crossover in conductivity occurs around the conductance quantum $e^2/h$ , and hence is not associated with "bad metal" behavior, which is in stark contrast to the MIT in half-filled organic Mott insulators or that in doped inorganic Mott insulators. Through in-depth scaling analysis of the conductivity, it is found that the above carrier transport properties in the vicinity of the MIT can be described by a high-temperature Mott quantum critical crossover, which is theoretically argued to be a ubiquitous feature of various types of Mott transitions. [This document is the unedited Authors' version of a Submitted Work that was subsequently accepted for publication in Nano Letters, copyright ©American Chemical Society after peer review. To access the final edited and published work see http://dx.doi.org/10.1021/acs.nanolett.6b03817]

cond-mat.str-el↗

arXiv2016

Electron-hole doping asymmetry of Fermi surface reconstructed in a simple Mott insulator

It is widely recognised that the effect of doping into a Mott insulator is complicated and unpredictable, as can be seen by examining the Hall coefficient in high $T_{\rm c}$ cuprates. The doping effect, including the electron-hole doping asymmetry, may be more straightforward in doped organic Mott insulators owing to their simple electronic structures. Here we investigate the doping asymmetry of an organic Mott insulator by carrying out electric-double-layer transistor measurements and using cluster perturbation theory. The calculations predict that strongly anisotropic suppression of the spectral weight results in the Fermi arc state under hole doping, while a relatively uniform spectral weight results in the emergence of a non-interacting-like Fermi surface in the electron-doped state. In accordance with the calculations, the experimentally observed Hall coefficients and resistivity anisotropy correspond to the pocket formed by the Fermi arcs under hole doping and to the non-interacting Fermi surface under electron doping.

cond-mat.str-el↗

arXiv2015

First-principles study of hydrogen-bonded molecular conductor $κ$-H$_3$(Cat-EDT-TTF/ST)$_2$

We theoretically study hydrogen-bonded molecular conductors synthesized recently, $κ$-H$_3$(Cat-EDT-TTF)$_2$ and its diselena analog, $κ$-H$_3$(Cat-EDT-ST)$_2$, by first-principles density-functional theory calculations. In these crystals, two H(Cat-EDT-TTF/ST) units share a hydrogen atom with a short O--H--O hydrogen bond. The calculated band structure near the Fermi level shows a quasi-two-dimensional character, with a rather large interlayer dispersion due to the absence of insulating layers in contrast with conventional molecular conductors. We discuss effective low-energy models based on H(Cat-EDT-TTF/ST) units and its dimers, respectively, where the microscopic character of the orbitals composing them are analyzed. Furthermore, we find a stable structure which is different from the experimentally determined structure, where the shared hydrogen atom becomes localized to one of the oxygen atoms, in which charge disproportionation between the two types of H(Cat-EDT-TTF) units is associated. The calculated potential energy surface for the H atom is very shallow near the minimum points, therefore the probability of the H atom can be delocalized between the two O atoms.

cond-mat.str-el↗

arXiv2015

Fragment Model Study of Molecular Multi-Orbital System $X$[Pd(dmit)$_2$]$_2$

Electronic properties of quasi-two-dimensional molecular conductors $X$[Pd(dmit)$_2$]$_2$ are studied theoretically. We construct an effective model based on the fragment molecular orbital scheme developed recently, which can describe the multi-orbital degree of freedom in this system. The tight-binding parameters for a series of $β'$-type compounds with different cations $X$ are evaluated by fitting to first-principles band calculations. We find that the transfer integrals within the dimers of Pd(dmit)$_2$ molecules, along the intramolecular and intermolecular bonds including the diagonal ones, are the same order, leading to hybridization between different molecular orbitals. This results in charge disproportionation within each molecule, as seen in our previous ab initio study [T. Tsumuraya et al, J. Phys. Soc. Jpn. 82, 033709 (2013)], and also to a revised picture of an effective dimer model. Furthermore, we discuss broken-symmetry insulating states triggered by interaction effects, which show characteristic features owing to the multi-orbital nature. The on-site Coulomb interaction induces antiferromagnetic states with intramolecular antiparallel spin pattern, while electron-lattice couplings stabilize non-magnetic charge-lattice ordered states where two kinds of dimers with different charge occupation arrange periodically. These states showing different spatial patterns compete with each other as well as with the paramagnetic metallic state.

cond-mat.str-el↗

arXiv2013

Lattice effects in the quasi-two-dimensional valence-bond-solid Mott insulator EtMe$_3$P[Pd(dmit)$_2$]$_2$

The organic charge-transfer salt EtMe$_3$P[Pd(dmit)$_2$]$_2$ is a quasi-two-dimensional Mott insulator with localized spins $S$ = 1/2 residing on a distorted triangular lattice. Here we report measurements of the uniaxial thermal expansion coefficients $α_i$ along the in-plane $i$ = $a$- and $c$-axis as well as along the out-of-plane $b$-axis for temperatures 1.4\,K $\leq $T$ \leq$ 200\,K. Particular attention is paid to the lattice effects around the phase transition at $T_{VBS}$ = 25\,K into a low-temperature valence-bond-solid phase and the paramagnetic regime above where effects of short-range antiferromagnetic correlations can be expected. The salient results of our study include (i) the observation of strongly anisotropic lattice distortions accompanying the formation of the valence-bond-solid, and (ii) a distinct maximum in the thermal expansion coefficients in the paramagnetic regime around 40\,K. Our results demonstrate that upon cooling through $T_{VBS}$ the in-plane $c$-axis, along which the valence bonds form, contracts while the second in-plane $a$-axis elongates by the same relative amount. Surprisingly, the dominant effect is observed for the out-of-plane $b$-axis which shrinks significantly upon cooling through $T_{VBS}$. The pronounced anomaly in $α_i$ around 40\,K is attributed to short-range magnetic correlations. It is argued that the position of this maximum, relative to that in the magnetic susceptibility around 70\,K, speaks in favor of a more anisotropic triangular-lattice scenario for this compound than previously thought.

cond-mat.str-el↗

arXiv2013

A Strained Organic Field-Effect-Transistor with a Gate-Tunable Superconducting Channel

In state-of-the-art silicon devices, mobility of the carrier is enhanced by the lattice strain from the back substrate. Such an extra control of device performance is significant in realizing high performance computing and should be valid for electric-field-induced superconducting devices, too. However, so far, the carrier density is the sole parameter for field-induced superconducting interfaces. Here we show an active organic superconducting field-effect-transistor whose lattice is modulated by the strain from the substrate. The soft organic lattice allows tuning of the strain by a choice of the back substrate to make an induced superconducting state accessible at low temperature with a paraelectric solid gate. An active three terminal Josephson junction device thus realized is useful both in advanced computing and in elucidating a direct connection between filling-controlled and bandwidth-controlled superconducting phases in correlated materials.

cond-mat.supr-con↗

arXiv2013

Cation Dependence of the Electronic States in Molecular Triangular Lattice System β'-X[Pd(dmit)_2]_2: A First-principles study

The electronic structure of an isostructural series of molecular conductors, β'-X[Pd(dmit)_2]_2 is systematically studied by a first-principles method based on the density-functional theory. The calculated band structures are fitted to the tight-binding model based on Pd(dmit)_2 dimers on the triangular lattice. We find systematic variation in the anisotropy of the transfer integrals along the three directions of the triangular lattice taking different values. The transfer integral along the face-to-face stacking direction of Pd(dmit)_2 dimers is always the largest. Around the quantum spin liquid, X = EtMe_3Sb, the other two transfer integrals become comparable. We also report sensible differences in the distribution of wavefunctions near the Fermi level between the two dmit ligands of the Pd(dmit)_2 molecule.

cond-mat.str-el↗

arXiv2009

Field-induced carrier delocalization in the strain-induced Mott insulating state of an organic superconductor

We report the influence of the field effect on the dc resistance and Hall coefficient in the strain-induced Mott insulating state of an organic superconductor $κ$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Br. Conductivity obeys the formula for activated transport $σ_{\Box} = σ_{0}\exp(-W/k_{B}T)$, where $σ_{0}$ is a constant and $W$ depends on the gate voltage. The gate voltage dependence of the Hall coefficient shows that, unlike in conventional FETs, the effective mobility of dense hole carriers ($\sim1.6\times 10^{14}$ cm$^{-2}$) is enhanced by a positive gate voltage. This implies that carrier doping involves delocalization of intrinsic carriers that were initially localized due to electron correlation.

cond-mat.str-el↗

arXiv2007

Mott Transition in a Valence Bond Solid Insulator with a Triangular Lattice

We have investigated the Mott transition in a quasi-two-dimensional Mott insulator EtMe$_3$P[Pd(dmit)$_2$]$_2$ with a spin-frustrated triangular lattice in hydrostatic pressure and magnetic field. In the pressure-temperature ($P$-$T$) phase diagram, a valence bond solid phase is found to neighbor the superconductor and metal phases at low temperatures. The profile of the phase diagram is common to those of Mott insulators with antiferromagnetic order. In contrast to the antiferromagnetic Mott insulators, the resistivity in the metallic phase exhibits anomalous temperature dependence, $ρ= ρ_0 + A T^{2.5}$.

cond-mat.str-el↗