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Rejaul SK

Publications and source records attributed to Rejaul SK.

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Quantum Criticality in Monolayer Amorphous Carbon

Amorphous solids represent the extreme limit of broken translational symmetry, in which the absence of long-range order removes well-defined crystal momenta and invalidates the Bloch description of electronic states. Monolayer amorphous carbon (MAC) has emerged as a unique realization of a strictly two-dimensional (2D) amorphous lattice defined by a structurally contiguous but topologically disordered $sp^2$-bonded random network devoid of any defined long-range crystal symmetry. From atomic-resolution measurements of multifractal wavefunctions, we show that disorder in MAC effectively localizes the low-energy part of the electronic spectrum but retains an extended critical-like state near the band centre ($E\sim 0$). We conjecture that this state is protected from topological disorder by remnant chiral symmetry surviving within the continuous random network, described by a Wess-Zumino-Witten (WZW) topological term. Near criticality, we verify the multifractal scaling relation $η= -Δ_2$, providing quantitative agreement between independently measured spatial correlation decay and multifractal scaling exponents. Our results are confirmed by atomistic tight-binding calculations that closely mirror the multifractal scaling near $E\sim 0$. Our results establish MAC as the first strictly 2D amorphous electronic system to exhibit Anderson criticality driven purely by topological disorder

cond-mat.dis-nn

Orbitally resolved single-photon emission from an individual atomic vacancy center in a semiconductor

Atomically confined spins are emerging as active components in quantum optoelectronic devices such as quantum bits and sensors. However, interrogating single spins at atomic length-scales remains a sizeable challenge, limited by diffraction in conventional optics. Here we show that the highly-local excitation provided by injecting energetic charge carriers from the atomically sharp probe of a scanning tunneling microscope can trigger single-photon emission from individual atomic vacancy centers in a layered semiconductor. With an effective spatial resolution of <1 nm, we show that the captured light closely mirrors the orbital symmetry of the bound-state wavefunction of the vacancy center while photon correlation measurements confirm single-photon emission, as reflected in clear photon anti-bunching signatures. Our results constitute an important step toward the realization of an electrically addressable single-atom quantum light source and solid-state spinphoton interface, addressed at the atomic-scale.

cond-mat.mes-hall