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René Hübner

Publications and source records attributed to René Hübner.

40 records · Page 3Linked to original sources

Purely Antiferromagnetic Magnetoelectric Random Access Memory

Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory (AF-MERAM) that offers a remarkable 50 fold reduction of the writing threshold compared to ferromagnet-based counterparts, is robust against magnetic disturbances and exhibits no ferromagnetic hysteresis losses. Using the magnetoelectric antiferromagnet Cr2O3, we demonstrate reliable isothermal switching via gate voltage pulses and all-electric readout at room temperature. As no ferromagnetic component is present in the system, the writing magnetic field does not need to be pulsed for readout, allowing permanent magnets to be used. Based on our prototypes of these novel systems, we construct a comprehensive model of the magnetoelectric selection mechanism in thin films of magnetoelectric antiferromagnets. We identify that growth induced effects lead to emergent ferrimagnetism, which is detrimental to the robustness of the storage. After pinpointing lattice misfit as the likely origin, we provide routes to enhance or mitigate this emergent ferrimagnetism as desired. Beyond memory applications, the AF-MERAM concept introduces a general all-electric interface for antiferromagnets and should find wide applicability in purely antiferromagnetic spintronics devices.

cond-mat.mes-hall↗

The role of the internal demagnetizing field in a surface-modulated magnonic crystal

Magnonic crystals with locally alternating properties and specific periodicities exhibit interesting effects, such as a multitude of different spin-wave states and large band gaps. This work aims for demonstrating and understanding the key role of local demagnetizing fields in such systems. To achieve this, hybrid structures are investigated consisting of a continuous thin film with a stripe modulation on top favorable due to the adjustability of the magnonic effects with the modulation size. For a direct access to the spin dynamics, a magnonic crystal was reconstructed from `bottom-up', i.e., the structural shape as well as the internal field landscape of the structure were experimentally obtained on the nanoscale using electron holography. Subsequently, both properties were utilized to perform dynamic response calculations. The simulations yield the frequency-field dependence as well as the angular dependence of spin waves in a magnonic crystal and reveal the governing role of the internal field landscape around the backward-volume geometry. The complex angle-dependent spin-wave behavior is described for a 360 degree in-plane rotation of an external field by connecting the internal field landscape with the individual spin-wave localization.

cond-mat.mtrl-sci↗

Defect-induced magnetism in SiC: Interplay between ferromagnetism and paramagnetism

Defect-induced ferromagnetism has triggered a lot of investigations and controversies. The major issue is that the induced ferromagnetic signal is so weak that it can sufficiently be accounted for by trace contamination. To resolve this issue, we studied the variation of the magnetic properties of SiC after neutron irradiation with fluence covering four orders of magnitude. A large paramagnetic component has been induced and scales up with defect concentration, which can be well accounted for by uncoupled divacancies. However, the ferromagnetic contribution is still weak and only appears in the low fluence range of neutrons or after annealing treatments. First-principles calculations hint towards a mutually exclusive role of the concentration of defects: Defects favor spin polarization at the expense of magnetic interaction. Combining both experimental and first-principles calculation results, the defect-induced ferromagnetism can be understood as a local effect which cannot be scaled up with the volume. Therefore, our investigation answers the long-standing question why the defect-induced ferromagnetic signal is weak.

cond-mat.mtrl-sci↗

Si nano-VINe: Electrical Percolation in Quantum-Confined nc-Si:SiO2 Systems

Nanostructures, especially of silicon, are of paramount importance for new generation solar cell applications. The key material requirements for solar cells are good electrical conductivity, confinement of excitons, and a tunable band-gap that allows for tandem arrangements to absorb a maximally large portion of the solar spectrum. However, to date, existing Si-based nanostructures have addressed these requirements individually. The difficulty is that these requirements are entangled in complex ways, so an effort to improve one can lead to a major trade-offs in the others. In this study, we report on a novel silicon nanostructure, where the key advance is that we have managed to satisfy all the abovementioned requirements simultaneously: We demonstrate that the excitons are confined, the bandgap is tunable, and the electrons can freely travel along the nc-Si network.

cond-mat.mtrl-sci↗