arXiv subjects

Renji Bian

Publications and source records attributed to Renji Bian.

2 recordsLinked to original sources

arXiv2023

Inverse-current quantum electro-oscillations in a charge-density wave insulator

Quantum magneto-oscillations have long been a vital subject in condensed matter physics, with ubiquitous quantum phenomena and diverse underlying physical mechanisms. Here, we demonstrate the intrinsic and reproducible DC-current-driven quantum electro-oscillations with a periodicity in the inverse of the current (1/I), in quasi-one-dimensional charge-density-wave (CDW) insulators (TaSe$_4$)$_2$I and TaS$_3$ nanowires. Such oscillations manifest in the nearly infinite Fr\"ohlich conductivity region where the undamped CDW flow forms in a finite electric current, and finally disappear after the oscillation index n reaches 1. A systematic investigation on the effect of temperature and magnetic field establishes that the observed electro-oscillations are a coherent quantum phenomenon. We discuss the possibilities of the physical mechanisms, including the formation of sliding-driven inherent Floquet sidebands. Our results introduce a new member in the family of quantum oscillations, and shed light on plausible avenues to explore novel physics and potential applications of coherent density-wave condensates.

cond-mat.mes-hall↗

arXiv2022

Sliding induced multiple polarization states in two-dimensional ferroelectrics

When the atomic layers in a non-centrosymmetric van der Waals structure slide against each other, the interfacial charge transfer results in a reversal of the structures spontaneous polarization. This phenomenon is known as sliding ferroelectricity and it is markedly different from conventional ferroelectric switching mechanisms relying on ion displacement. Here, we present layer dependence as a new dimension to control sliding ferroelectricity. By fabricating 3R MoS2 of various thicknesses into dual-gate field-effect transistors, we obtain anomalous intermediate polarization states in multilayer 3R MoS2. Using results from ab initio density functional theory calculations, we propose a generalized model to describe the ferroelectric switching process in multilayer 3R MoS2 and to explain the formation of these intermediate polarization states. This work reveals the critical roles that layer number and interlayer dipole coupling play in sliding ferroelectricity and presents a new strategy for the design of novel sliding ferroelectric devices.

cond-mat.mtrl-sci↗