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Renlong Liu

Publications and source records attributed to Renlong Liu.

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Activated Migration of Localized Ligand-Field Excitons in Atomically Thin CrCl3

Two-dimensional crystals with densely packed atoms exhibit a range of emerging properties, particularly a wide variety of excitonic behaviors. Thickness-variable layered chromium trihalides with finite surface recombination sites provide an ideal system for understanding how excitons confined in octahedral ligand fields migrate on nanometer length scales, a regime that defies conventional transport probes. In this work, we demonstrate that Cr3+-derived photoluminescence in CrCl3 is spectrally thickness-independent, but its relaxation dynamics are strongly sensitive to thickness and temperature, thereby indicating significant activated migration. A diffusion-coupled surface recombination model reveals an effective out-of-plane diffusivity of 4.5 x 10-6 cm2/s for the ligand-field excitons and a diffusion activation energy of 130 meV. The latter is comparable to the reorganization energy independently estimated from optical Stokes shifts, suggesting that exciton transport is coupled to local lattice relaxation. Furthermore, we show that the relaxation dynamics can be systematically tuned by either enhancing or suppressing surface recombination through controlled surface reactions or encapsulation. This work not only reveals the nanoscopic transport of localized ligand-field excitons but also establishes a spectroscopic transport probe applicable to various 2D materials.

cond-mat.mtrl-sci

Topological Insulator-Based van der Waals Heterostructures for Effective Control of Massless and Massive Dirac Fermions

Three dimensional (3D) topological insulators (TIs) are an important class of materials with applications in electronics, spintronics and quantum computing. With the recent development of truly bulk insulating 3D TIs, it has become possible to realize surface dominated phenomena in electrical transport measurements e.g. the quantum Hall (QH) effect of massless Dirac fermions in topological surface states (TSS). However, to realize more advanced devices and phenomena, there is a need for a platform to tune the TSS or modify them e.g. gap them by proximity with magnetic insulators, in a clean manner. Here we introduce van der Waals (vdW) heterostructures in the form of topological insulator/insulator/graphite to effectively control chemical potential of the TSS. Two types of gate dielectrics, normal insulator hexagonal boron nitride (hBN) and ferromagnetic insulator Cr2Ge2Te6 (CGT) are utilized to tune charge density of TSS in the quaternary TI BiSbTeSe2. hBN/graphite gating in the QH regime shows improved quantization of TSS by suppression of magnetoconductivity of massless Dirac fermions. CGT/graphite gating of massive Dirac fermions in the QH regime yields half-quantized Hall conductance steps and a measure of the Dirac gap. Our work shows the promise of the vdW platform in creating advanced high-quality TI-based devices.

cond-mat.mes-hall