Searcharxiv⌕ Search

arXiv subjects

Rhonald Burgos Atencia

Publications and source records attributed to Rhonald Burgos Atencia.

14 recordsLinked to original sources

Giant geometric nonlinear transport in inhomogeneously strained Bi$_2$Se$_3$ single crystalline slabs

Electrical transport in non-centrosymmetric materials exhibits a nonlinear conductivity tensor component that generates second-harmonic voltages in response to applied electric fields. Harnessing this effect is essential for developing zero-threshold electromagnetic energy harvesters and broadband frequency upconverters, both of which require maximizing the nonlinear responsivity. Here, we demonstrate that inhomogeneously strained macroscopic slabs of the topological insulator Bi$_2$Se$_3$ achieve a record-high nonlinear responsivity of $10^4\,μ$m/V: a six orders of magnitude boost compared to its thin-film counterparts. We attribute this giant enhancement to a classical geometric nonlinear transport effect, which is driven by complex strain gradients within the bulk material. Notably, a similar geometric mechanism known as geometric nonlinear Hall was previously observed only in microscale-patterned structures. Our findings establish macroscopic strain engineering as a powerful route to enhance nonlinear transport, with immediate relevance to a broad class of layered systems, including transition metal dichalcogenides and moiré heterostructures.

cond-mat.mes-hall↗

Intrinsic Orbital Hall Effect in Degenerate Spin-3/2 Systems driven by the quantum metric

We show that in rotationally invariant spin-$3/2$ systems the orbital Hall effect originates from interband matrix elements of the orbital magnetic moment. The resulting Hall response is governed by the quantum metric, rather than by the Berry curvature, revealing a purely geometric transport mechanism. Conventional intraband contributions associated with the orbital magnetic moment and Berry curvature are shown to vanish identically in degenerate systems. These results identify the quantum metric as the key geometric quantity controlling orbital Hall transport in degenerate multiband systems.

cond-mat.mes-hall↗

Quantum metric quadrupoles in elemental bismuth thin films

The nonlinear transport properties of solids are deeply rooted in the quantum geometry of their electronic wavefunctions, which is encoded in the quantum geometric tensor. Its real part, known as the quantum metric, has been recently identified as a primary origin of nonlinear transport in quantum materials where time-reversal and inversion symmetries are not simultaneously present. Consequently, the influence of the quantum metric on the largest class of materials -- non-magnetic and centrosymmetric systems -- has remained entirely elusive. Here, we demonstrate that third-order transport in centrosymmetric materials hosting relativistic fermions is governed by quantum metric quadrupoles (QMQs). We show that these QMQs can originate from both the non-Abelian quantum geometry of bulk three-dimensional Dirac fermions and the Abelian quantum geometry of spin-orbit-coupled surface states. In stark contrast to all zero-field nonlinear transport signatures known to date, the current driven by these QMQs persists as a robust, non-vanishing observable even in highly scalable polycrystalline thin films. We experimentally validate this quantum metric footprint by measuring nonlinear transport in thin films of elemental bismuth, observing a robust, surface-dominated, and broadband third-harmonic generation that persists up to room temperature. Our findings uncover a hidden role of the quantum metric in polycrystalline systems, establishing third-order nonlinear transport as a high-precision diagnostic tool of wavefunction geometry under ambient conditions.

cond-mat.mes-hall↗

Skew scattering induced contribution to orbital Hall response

Our study provides the disorder-induced contribution to the orbital Hall conductivity in three-dimensional Weyl semimetals with broken time-reversal symmetry. Using the quantum kinetic approach, we analyse the impact of side-jump and skew scattering contributions to the system. The dependence of the orbital Hall conductivity on both disorder potential and the Fermi energy is explicitly demonstrated. Furthermore, we demonstrate that the higher-order disorder contribution, especially from the third power of disorder potential, dominates the orbital Hall conductivity under an oscillating electric field in a time-reversal symmetry broken Weyl semimetal, suppressing other scattering mechanisms, including the side jump contributions. We can enhance the extrinsic orbital Hall conductivity by tuning the strength of the disorder potential, applied energy, and choosing the system with appropriate Weyl node separation. Finally, our results are supported by numerical estimations and highlight potential experimental relevance for advancing orbitronics device technologies.

cond-mat.mes-hall↗

Quantum geometry and linear orbital response in arbitrary $SU(2)$ representation

We develop a unified framework to compute band-geometric quantities in multiband systems whose low-energy Hamiltonians realize arbitrary $SU(2)$ representations. Exploiting the presence of a quantization axis, we use the Wigner--Eckart theorem to identify the allowed interband matrix elements and obtain compact analytic expressions for the quantum geometric tensor, the orbital magnetic moment, and the resulting orbital transport coefficients. The formalism applies to both multifold fermions and gapped $SU(2)$ models. Its versatility is demonstrated through explicit calculations in representative $SU(3)$ and $SU(4)$ settings, where orbital Edelstein and orbital Hall responses arise naturally from the antisymmetric components of the band geometry. Our results reveal a universal link between the algebraic structure of the Hamiltonian and emergent orbitronic phenomena.

cond-mat.mes-hall↗

Zeeman-activated Berry curvature magnetotransport from the bulk of non-magnetic metals with inversion symmetry

The Berry curvature (BC), a quantity encoding the geometry of electronic wavefunctions, governs various electronic transport effects in quantum materials. In magnetic systems, the BC is reponsible for the intrinsic part of the anomalous Hall conductivity. Local concentrations of BC in non-centrosymmetric materials can lead instead to the quantum nonlinear Hall effect. Here, we argue that the bulk of non-magnetic metals with inversion symmetry, systems where the BC is forced to vanish at any momentum, can be endowed with substantial concentrations of BC even with an infinitesimally small Zeeman coupling. This Zeeman-activated BC, independent of the magnetic field strength and instead related to the degree of non-parabolicity of the electronic bands, couples to the electronic orbital motion to generate a negative longitudinal magnetoresistance that scales with the relaxation time as the Drude resistivity. We show that the Zeeman-actived BC and the related intrinsic negative magnetoresistivity are generic: they appear in all centrosymmetric point groups and can occur both in topological and conventional conductors.

cond-mat.mes-hall↗

Room-Temperature Disorder-Driven Nonlinear Transport in Topological Materials

Recent experiments have reported nonlinear signals in topological materials up to room temperature. Here we show that this response stems from extrinsic spin-orbit contributions to \textit{both} impurity and phonon scattering. While skew scattering dominates at low temperatures, the side jump contribution $\propto τ/τ_β$, where $τ$, $τ_β$ are the momentum and skew scattering times respectively. Consequently side jump exhibits a weak temperature dependence and remains sizable at room temperature. Our results provide a roadmap for engineering nonlinear transport at ambient conditions.

cond-mat.mes-hall↗

Orbital angular momentum of Bloch electrons: equilibrium formulation, magneto-electric phenomena, and the orbital Hall effect

The investigation of orbital angular momentum (OAM) of delocalised Bloch electrons has advanced our understanding of magnetic, transport, and optical phenomena in crystals, drawing widespread interest across various materials science domains, from metals and semiconductors to topological and magnetic materials. Here, we review OAM dynamics in depth, focusing on key concepts and non-equilibrium systems, and laying the groundwork for the thriving field of {\it orbitronics}. We review briefly the conventional understanding of the equilibrium OAM based on the modern theory of orbital magnetisation. Following this, we explore recent theoretical and experimental developments in out-of-equilibrium systems. We focus on the generation of an OAM density via the orbital magneto-electric, or Edelstein effect, the generation of an OAM current via the orbital Hall effect, the orbital torque resulting from them, along with their reciprocal non-equilibrium counterparts -- the inverse orbital Edelstein and inverse orbital Hall effects, as well as OAM conservation. We discuss the most salient achievements and the most pressing challenges in this rapidly evolving field, and in closing we highlight the future prospects of {\it orbitronics}.

cond-mat.mes-hall↗

Intrinsic torque on the orbital angular momentum in an electric field

Orbitronics harnesses non-equilibrium densities and flows of electrons orbital angular momentum (OAM). Although the OAM must be long lived to be useful in information processing, the mechanisms leading to OAM non-conservation remain unknown. Here we show that an electric field induces an intrinsic torque on the OAM mediated by the quantum metric tensor, without spin-orbit coupling or magnetic fields. The torque vanishes in pseudospin-1/2 systems with particle-hole symmetry but is nonzero in the presence of nontrivial textures. We discuss implications for topological materials and strategies for experimental observation.

cond-mat.mes-hall↗

Intrinsic nonlinear conductivities induced by the quantum metric

The second-order nonlinear current originates from three physical mechanisms: extrinsic nonlinear Drude and Berry curvature dipole and intrinsic Berry connection polarizability. Here, we predict a new intrinsic contribution to the current related to the quantum metric, a quantum geometric property of the electronic wave function. This contribution manifests in systems that simultaneously break the time-reversal and the inversion symmetry. Interestingly, the new contribution is dissipative in nature and contributes to both longitudinal and the dissipative nonlinear Hall response. The quantum metric-induced NL current dominates transport in parity-time reversal symmetric systems near the band edges, something we show explicitly for topological antiferromagnets.

cond-mat.mes-hall↗

Disorder in the non-linear anomalous Hall effect of $\mathcal{P}\mathcal{T}$-symmetric Dirac fermions

The study of the non-linear anomalous Hall effect (NLAHE) in $\mathcal{P}\mathcal{T}$-symmetric systems has focussed on intrinsic mechanisms. Here we show that disorder contributes substantially to NLAHE and often overwhelms intrinsic terms. We identify terms to zeroth order in the disorder strength involving the Berry curvature dipole, skew scattering and side-jump, all exhibiting a strong peak as a function of the Fermi energy, a signature of interband coherence. Our results suggest NLAHE at experimentally relevant transport densities in $\mathcal{P}\mathcal{T}$-symmetric systems is likely to be extrinsic.

cond-mat.mes-hall↗

Spin transfer torques due to the bulk states of topological insulators

Spin torques at topological insulator (TI)/ferromagnet interfaces have received considerable attention in recent years with a view towards achieving full electrical manipulation of magnetic degrees of freedom. The most important question in this field concerns the relative contributions of bulk and surface states to the spin torque, a matter that remains incompletely understood. Whereas the surface state contribution has been extensively studied, the contribution due to the bulk states has received comparatively little attention. Here we study spin torques due to TI bulk states and show that: (i) There is no spin-orbit torque due to the bulk states on a homogeneous magnetisation, in contrast to the surface states, which give rise to a spin-orbit torque via the well-known Edelstein effect. (ii) The bulk states give rise to a spin transfer torque (STT) due to the inhomogeneity of the magnetisation in the vicinity of the interface. This spin transfer torque, which has not been considered in TIs in the past, is somewhat unconventional since it arises from the interplay of the bulk TI spin-orbit coupling and the gradient of the monotonically decaying magnetisation inside the TI. Whereas we consider an idealised model in which the magnetisation gradient is small and the spin transfer torque is correspondingly small, we argue that in real samples the spin transfer torque should be sizable and may provide the dominant contribution due to the bulk states. We show that an experimental smoking gun for identifying the bulk states is the fact that the field-like component of the spin transfer torque generates a spin density with the same size but opposite sign for in-plane and out-of-plane magnetisations. This distinguishes them from the surface states, which are expected to give a spin density of a similar size and the same sign for both an in-plane and out-of-plane magnetisations.

cond-mat.mes-hall↗

Coherent backscattering in the topological Hall effect

The mutual interplay between electron transport and magnetism has attracted considerable attention in recent years, primarily motivated by strategies to manipulate magnetic degrees of freedom electrically, such as spin-orbit torques and domain wall motion. Within this field the topological Hall effect, which originates from scalar spin chirality, is an example of inter-band quantum coherence induced by real-space inhomogeneous magnetic textures, and its magnitude depends on the winding number and chiral spin features that establish the total topological charge of the system. Remarkably, in the two decades since its discovery, there has been no research on the quantum correction to the topological Hall effect. Here we will show that, unlike the ordinary Hall effect, the inhomogeneous magnetization arising from the spin texture will give additional scattering terms in the kinetic equation, which result in a quantum correction to the topological Hall resistivity. We focus on 2D systems, where weak localization is strongest, and determine the complicated gradient corrections to the Cooperon and kinetic equation. Whereas the weak localization correction to the topological Hall effect is not large in currently known materials, we show that it is experimentally observable in dilute magnetic semiconductors. Our theoretical results will stimulate experiments on the topological Hall effect and fill the theoretical knowledge gap on weak localization corrections to transverse transport.

cond-mat.mes-hall↗

Semiclassical equations of motion for disordered conductors: extrinsic interband velocity, corrected collision integral and spin-orbit torques

The semiclassical equations of motion are widely used to describe carrier transport in conducting materials. Nevertheless, the substantial challenge of incorporating disorder systematically into the semiclassical model persists, leading to quantitative inaccuracies and occasionally erroneous predictions for the expectation values of physical observables. In the present work we provide a general prescription for reformulating the semiclassical equations of motion for carriers in disordered conductors by taking the quantum mechanical density matrix as the starting point. We focus on external electric fields, without magnetic fields, and spin-independent disorder. The density matrix approach allows averaging over impurity configurations, and the trace of the velocity operator with the disorder-averaged density matrix can be reinterpreted as the semiclassical velocity weighted by the Boltzmann distribution function. Through this rationale the well-known intrinsic group and anomalous velocities are trivially recovered, while we demonstrate the existence of an extrinsic interband velocity, namely a disorder correction to the semiclassical velocity of Bloch electrons, mediated by the interband matrix elements of the Berry connection. A similar correction is present in the non-equilibrium expectation value of the spin operator, contributing to spin-orbit torques. To obtain agreement with diagrammatic approaches the scattering term in the Boltzmann equation is corrected to first order in the electric field, and the Boltzmann equation is solved up to sub-leading order in the disorder potential. Our prescription ensures all vertex corrections present in diagrammatic treatments are taken into account, and to illustrate this we discuss model cases in topological insulators, including the anomalous Hall effect as well as spin-orbit torques.

cond-mat.mes-hall↗