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Ricardo Egoavil

Publications and source records attributed to Ricardo Egoavil.

5 recordsLinked to original sources

Gap-free Information Transfer in 4D-STEM via Fusion of Complementary Scattering Channels

Linear phase-contrast scanning transmission electron microscopy (STEM) techniques compatible with high-throughput 4D-STEM acquisition are widely used to enhance phase contrast in weakly scattering and beam-sensitive materials. In these modalities, contrast transfer is often suppressed at low spatial frequencies, resulting in a characteristic contrast gap that limits quantitative imaging. Approaches that retain low-frequency phase contrast exist but typically require substantially increased experimental complexity, restricting routine use. Dark-field STEM imaging captures this missing low-frequency information through electrons scattered outside the bright-field disk, but discards a large fraction of the scattered signal and is therefore dose-inefficient. Fused Full-field STEM (FF-STEM) is introduced as a 4D-STEM imaging modality that overcomes this limitation by combining ptychographic phase reconstruction with tilt-corrected dark-field imaging within a single acquisition. Bright-field data are used to estimate probe aberrations and reconstruct a high-resolution phase image, while dark-field data provide complementary low-frequency contrast. The two channels are optimally fused in Fourier space using minimum-variance weighting based on the spectral signal-to-noise ratio, yielding transfer-gap-free images with high contrast and quantitative fidelity. FF-STEM preserves the upsampling and depth-sectioning capabilities of ptychography, adds robust low-frequency contrast characteristic of dark-field imaging, and enables dose-efficient, near-real-time reconstruction.

physics.optics

Isotopically Selected Single Antimony Molecule Doping

A reliable route to the deterministic fabrication of impurity ion donors in silicon is required to advance quantum computing architectures based upon such systems. This paper reports the ability to dope isotopically-defined unique (${}^{121}\mathrm{Sb}{}^{123}\mathrm{Sb}$) clusters into silicon with measured detection efficiencies of 94% being obtained. Atomically resolved imaging of the doped clusters reveals a Sb-to-Sb separation of ~2 nm post-implantation, thus indicating suitability to form coupled qudit systems. The method used is fully compatible with integration into processing that includes pre-enrichment of the silicon host to < 3ppm ${}^{29}\mathrm{Si}$ levels. As such, we present a potential pathway to the creation of scaled qudit arrays within silicon platforms for quantum computing.

cond-mat.mtrl-sci

Bandgap measurement of high refractive index materials by off-axis EELS

In the present work, Cs aberration corrected and monochromated scanning transmission electron microscopy electron energy loss spectroscopy STEM-EELS has been used to explore experimental set-ups that allows bandgaps of high refractive index materials to be determined. Semi-convergence and -collection angles in the micro-radian range were combined with off-axis or dark field EELS to avoid relativistic losses and guided light modes in the low loss range to contribute to the acquired EEL spectra. Off-axis EELS further suppressed the zero loss peak and the tail of the zero loss peak. The bandgap of several GaAs-based materials were successfully determined by direct inspection and without any background subtraction of the EEL spectra. The presented set-up does not require that the acceleration voltage is set to below the Cerenkov limit and can be applied over the entire acceleration voltage range of modern TEMs and for a wide range of specimen thicknesses.

cond-mat.mtrl-sci

Mapping electronic reconstruction at the metal/insulator interfaces in \ce{LaVO_3/SrVO_3} heterostructures

A \ce{(LaVO_3)_6/(SrVO_3)_3} superlattice is studied with a combination of sub-Å resolved scanning transmission electron microscopy and monochromated electron energy-loss spectroscopy. The V oxidation state is mapped with atomic spatial resolution enabling to investigate electronic reconstruction at the \ce{LaVO_3}/\ce{SrVO_3} interfaces. Surprisingly, asymmetric charge distribution is found at adjacent chemically symmetric interfaces. The local structure is proposed and simulated with double channeling calculation which agrees qualitatively with our experiment. We demonstrate that local strain asymmetry is the likely cause of the electronic asymmetry of the interfaces. The electronic reconstruction at the interfaces extends much further than the chemical composition, varying from 0.5 to 1.2 nm. This distance corresponds to the length of charge transfer previously found in the \ce{(LaVO_3)_m}/\ce{(SrVO_3)_n} metal/insulating and the \ce{(LaAlO_3)_m}/\ce{(SrTiO_3)_n} insulating/insulating interfaces.

cond-mat.mtrl-sci

Preventing the reconstruction of the polar discontinuity at oxide heterointerfaces

Perovskite oxide heteroepitaxy receives much attention because of the possibility to com- bine the diverse functionalities of perovskite oxide building blocks. A general boundary con- dition for the epitaxy is the presence of polar discontinuities at heterointerfaces. These polar discontinuities result in reconstructions, often creating new functionalities at the interface. However, for a significant number of materials these reconstructions are unwanted as they alter the intrinsic materials properties at the interface. Therefore, a strategy to eliminate this reconstruction of the polar discontinuity at the interfaces is required. We show that the use of compositional interface engineering can prevent the reconstruction at the La0.67Sr0.33MnO3/SrTiO3 (LSMO/STO) interface. The polar discontinuity at this interface can be removed by the insertion of a single La0.33Sr0.67O layer, resulting in improved interface magnetization and electrical conductivity.

cond-mat.mtrl-sci