arXiv subjects

Richa P. Madhogaria

Publications and source records attributed to Richa P. Madhogaria.

6 recordsLinked to original sources

arXiv2026

Electron viscosity and device-dependent variability in four-probe electrical transport in ultra-clean graphene field-effect transistors

Hydrodynamic electrons in high-mobility graphene devices have demonstrated great potential in establishing an electronic analogue of relativistic quantum fluid in solid-state systems. One of the key requirements for observing viscous electron flow in an electronic channel is a large momentum-relaxation path, a process primarily limited by electron-impurity/phonon scattering in graphene. Over the past decade, multiple complex device geometries have been successfully employed to suppress momentum-relaxing scattering mechanisms; however, experimental observations have been found to be sensitive to the device fabrication process and architecture, raising questions about the signature of electron hydrodynamics itself. Here, we present a study on multiple ultra-clean graphene field-effect transistors (FETs) in a simple, rectangular four-terminal device architecture. Using electrical transport measurements, we have characterised the pristine quality of the graphene FETs and examined the variation of electrical resistance in the doped regime as a function of carrier density and temperature. Our results reveal strong device-dependent variability even in the most simple architecture that we attribute to competing momentum-conserving and momentum-relaxing scattering mechanisms, as well as coupling to contacts. Further, we have proposed a phenomenological method for analysing the results, which yields transport parameters in accordance with recent experiments. This simple experimental strategy and analysis can serve as an efficient tool for extracting the viscous electronic contribution in state-of-the-art high-mobility graphene FETs.

cond-mat.mes-hall↗

arXiv2025

Diverse Magnetic Phase Diagram and Anomalous Hall Effect in Antiferromagetic LuMn$_6$Sn$_6$

The interactions between conduction electrons and magnetism can significantly enhance the Hall signal, a phenomenon known as the anomalous Hall effect (AHE). While the AHE is generally not expected in antiferromagnets, a large AHE is observed in certain antiferromagnets with noncollinear spin textures and nonvanishing Berry curvature. In this work, we present a rich temperature and magnetic phase diagram with eight distinct magnetic phases for the antiferromagnetic kagome compound LuMn$_6$Sn$_6$. The Hall effect analysis in LuMn$_6$Sn$_6$ reveals both intriguing physical phenomena and methodological challenges. In the coplanar canted antiferromagnetic phase, we observe an AHE, which likely originates from the intrinsic effects. At low temperatures, upon entering the ferromagnetic phase, the AHE sharply increases and exceeds the conventional limits expected from intrinsic mechanisms. We also demonstrate the limitations of standard experimental methods in extracting the topological contribution to the Hall effect data. We show the importance of considering magnetoresistance anisotropy when estimating the anomalous and topological Hall effects. These shortcomings in current approaches in partitioning the Hall response necessitate new tools to interpret transport results in complex magnetic materials such as LuMn$_6$Sn$_6$.

cond-mat.str-el↗

arXiv2025

Discovery of an Intermediate Nematic State in a Bilayer Kagome Metal ScV6Sn6

Nematicity, where rotational symmetry of the crystal lattice is spontaneously broken, is a ubiquitous phenomenon in correlated quantum matter, often intertwining with other orders to produce a richer spectrum of phases. Here we report a new phase transition in high-quality ScV6Sn6 bilayer kagome metal at a temperature T^*, occurring seven Kelvins below the charge density wave (CDW) transition at T_CDW, as indicated by thermodynamic, transport, and optical measurements. This emerging intermediate phase does not exhibit spontaneous time-reversal-symmetry breaking, as evidenced by zero-field Sagnac interferometer experiments. However, it displays a strong, spontaneous (strain- and field-free) anisotropy in the kagome plane between T^* and T_CDW, as revealed by transport and optical polarization rotation measurements. Additionally, a pronounced depolarization effect detected by the Sagnac interferometer further confirms its nematic nature. This intermediate nematic phase, alongside the recently discovered intra-unit cell nematic order at much lower temperatures, presents a diverse landscape of nematicities at multiple length and temperature scales, distinguishing it from those observed in kagome metals AV3Sb5. Our findings highlight ScV6Sn6 and the broader RM6X6 intermetallic family as fertile platforms for realizing symmetry-breaking phases driven by a unique interplay of competing CDW instabilities, kagome physics, and Van Hove singularities.

cond-mat.str-el↗

arXiv2024

Quantum Oscillations Evidence for Topological Bands in Kagome Metal ScV6Sn6

Metals with kagome lattice provide bulk materials to host both the flat-band and Dirac electronic dispersions. A new family of kagome metals is recently discovered in AV6Sn6. The Dirac electronic structures of this material need more experimental evidence to confirm. In the manuscript, we investigate this problem by resolving the quantum oscillations in both electrical transport and magnetization in ScV6Sn6. The revealed orbits are consistent with the electronic band structure models. Furthermore, the Berry phase of a dominating orbit is revealed to be around $π$, providing direct evidence for the topological band structure, which is consistent with calculations. Our results demonstrate a rich physics and shed light on the correlated topological ground state of this kagome metal.

cond-mat.str-el↗

arXiv2023

Universal sublinear resistivity in vanadium kagome materials hosting charge density waves

The recent discovery of a charge density (CDW) state in ScV$_6$Sn$_6$ at $T_{\textrm{CDW}}$ = 91 K offers new opportunities to understand the origins of electronic instabilities in topological kagome systems. By comparing to the isostructural non-CDW compound LuV$_6$Sn$_6$, we unravel interesting electrical transport properties in ScV$_6$Sn$_6$, above and below the charge ordering temperature. We observed that by applying a magnetic field along the $a$ axis, the temperature behavior of the longitudinal resistivity in ScV$_6$Sn$_6$ changes from metal-like to insulator-like above the CDW transition. We show that in the charge ordered state ScV$_6$Sn$_6$ follows the Fermi liquid behavior while above that, it transforms into a non-Fermi liquid phase in which the resistivity varies sublinearly over a broad temperature range. The sublinear resistivity, which scales by $T^{3/5}$ is a common feature among other vanadium-containing kagome compounds exhibiting CDW states such as KV$_3$Sb$_5$, RbV$_3$Sb$_5$, and CsV$_3$Sb$_5$. By contrast, the non-Fermi liquid behavior does not occur in LuV$_6$Sn$_6$. We explain the $T^{3/5}$ universal scaling behavior from the Coulomb scattering between Dirac electrons and Van Hove singularities; common features in the electronic structure of kagome materials. Finally, we show anomalous Hall-like behavior in ScV$_6$Sn$_6$ below $T_{\textrm{CDW}}$, which is absent in the Lu compound. Comparing the transport properties of ScV$_6$Sn$_6$ and LuV$_6$Sn$_6$ is valuable to highlight the impacts of the unusual CDW in the Sc compound.

cond-mat.str-el↗

arXiv2023

Topological Nernst and topological thermal Hall effect in rare-earth kagome ScMn$_6$Sn$_6$

Thermal and thermoelectric measurements are known as powerful tools to uncover the physical properties of quantum materials due to their sensitivity towards the scattering and chirality of heat carriers. We use these techniques to confirm the presence of momentum and real-space topology in ScMn$_6$Sn$_6$. There is an unconventional dramatic increase in the Seebeck coefficient on entering the transverse conical spiral (TCS) below $T$ = 200 K suggesting an unusual scattering of heat carriers. In addition, the observed anomalous thermal Hall effect and the anomalous Nernst effect indicates non-zero Berry curvature in $k$-space. Furthermore, we identify a significant topological contribution to the thermal Hall and Nernst signals in the TCS phase revealing the impacts of real-space Berry curvature. We discuss the presence of topological thermal Hall effect and topological Nernst effect for the first time in the diverse HfFe$_6$Ge$_6$ family. This study illustrates the importance of transverse thermal and thermoelectric measurements to investigate the origin of topological transport in the non-coplanar magnetic phases in this family of kagome metals.

cond-mat.str-el↗