arXiv subjects

Ridwan Hussein

Publications and source records attributed to Ridwan Hussein.

3 recordsLinked to original sources

arXiv2026

Temperature dependence of electronic conductivity from ab initio thermal simulation

We present a temperature-dependent extension of the approximate electronic conductivity formula of Hindley and Mott that leverages time-averaged fluctuations of the electronic density of states obtained from ab initio molecular dynamics. By thermally averaging the square of the density of states near the Fermi level, we obtain an estimate of the temperature dependence of the conductivity. This approach termed the thermally-averaged Hindley-Mott (TAHM) method was applied to five representative systems: crystalline aluminum (c-Al), aluminum with a grain boundary (AlGB), a four-layer graphene-aluminum composite (Al-Gr), amorphous silicon (a-Si) and amorphous germanium-antimony-telluride (a-GST). The method reproduces the expected Bloch-Gruneisen decrease in conductivity for c-Al and AlGB. Generally, the reduction (increase) in conductivity for metallic (semiconducting) materials are reproduced. It captures microstructure-induced, thermally activated conduction in multilayer Al-Gr, a-Si and a-GST. Overall, the approach provides a computationally efficient link between time-dependent electronic structure and temperature-dependent transport, offering a simple and approximate tool for exploring electronic conductivity trends in complex and disordered materials.

cond-mat.mtrl-sci↗

arXiv2025

Electronic and thermal properties of the phase-change memory material, Ge2Sb2Te5, and results from spatially resolved transport calculations

We report new insights into the electronic, structural, and transport (heat and charge) properties of the phase-change memory material Ge2Sb2Te5. Using realistic structural models of Konstantinou et. al. [Nat. Commun. 10, 3065 (2019)], we analyze the topology, electronic states, and lattice dynamics with density functional methods, including hybrid-functional calculations and machine-learned interatomic potentials. The Kohn-Sham orbitals near the Fermi level display a strong electron-phonon coupling, and exhibit large energy fluctuations at room temperature. The conduction tail states exhibit larger phonon-induced fluctuations than the valence tail states. To resolve transport at the atomic scale, we employ space-projected electronic conductivity and site-projected thermal conductivity methods. Local analysis of heat transport highlights the role of filamentary networks dominated by Te, with Sb and Ge making progressively smaller contributions.

cond-mat.mtrl-sci↗

arXiv2025

Electronic conduction in copper-graphene composites with functional impurities

Coal-derived graphene-like material and its addition to FCC copper are investigated using ab initio plane wave density functional theory (DFT). We explore ring disorder in the sp2 carbon, and functional impurities such as oxides (-O), and hydroxides (-OH) that are common in coal-derived graphene. The electronic density of states analysis revealed localized states near the Fermi level, with functional groups contributing predominantly to states below the Fermi level, while carbon atoms in non-hexagonal rings contributed mainly to states above it. The functionalization of graphene induces charge localization while ring disorder disrupts the continuous flow of electrons. By projecting the electronic conductivity along specific spatial directions, we find that both the crystal orientation and the graphene purity significantly influence the anisotropy and magnitude of electronic transport in the composites. This study implicitly highlights the importance of structural stress to obtain improved electrical conductivity in such composites.

cond-mat.mtrl-sci↗