arXiv subjects

Rik Drummond-Brydson

Publications and source records attributed to Rik Drummond-Brydson.

3 recordsLinked to original sources

arXiv2026

A critical consideration of X-ray detectors based on Ga2O3: excitation, carrier transport mechanisms and performance standardization

X-ray detection underpins a wide range of applications in medicine, security, industrial inspection, scientific research for non-destructive imaging and material analysis. The rapid development of Ga2O3-based X-ray detectors offers a promising pathway toward next-generation detectors with high sensitivity, low noise, and harsh environment applications, benefiting from its intrinsic material properties such as high density, wide band gap energy, and high thermal-chemical stability. However, the underlying device operating mechanisms, including both carrier excitation and transport processes, have not yet been adequately studied, largely due to the misuse of X-ray sources in previous studies. Besides, benchmarking of device characteristics has been problematic due to experimental or data analysis issues, as well as misunderstandings of the applied equations associated with parameter definitions. In this work, we have designed and performed an instructive research work based on epitaxial beta-Ga2O3:Si and its planar Schottky detectors, measured with energy-tuneable monochromatic X-ray beams on a synchrotron beamline, clarifying the device excitation and carrier transport mechanisms with properly benchmarked device performance. In the end, we propose a set of protocols for correctly measuring and analysing the device performance. The proposed protocols are broadly applicable and can be readily extended to other semiconductor X-ray detectors.

physics.ins-det↗

arXiv2026

In Situ Dynamics of the Microscopic Crystallographic Dehydration Pathway in a Model Channel Hydrate, Theophylline

Solid-state phase transformations in molecular crystal hydrates govern stability and functional performance across a range of applications, including pharmaceutical, agrochemical and coordination framework materials. During dehydration, these hydrates can undergo substantial structural reorganisation involving changes in molecular orientation, intermolecular interactions, and lattice symmetry. Despite extensive study, the microscopic crystallographic pathways by which such transformations proceed remain poorly understood. Here, we investigate the dynamics of solid-state dehydration of theophylline monohydrate as a model molecular hydrate using in situ low-dose scanning electron diffraction (SED). Simultaneous observations of changes in morphology and crystallographic phase and orientation mapped across single particles reveal how complete dehydration proceeds via a two-step, reconstructive topotactic solid-state transformation: anisotropic, surface-specific mass loss of material near water channel sides (suggesting the monohydrate adopts a non-centrosymmetric crystal structure) is followed by surface-localised nucleation and growth of anhydrous form II on the parent monohydrate while preserving similar molecular orientations at a common plane. By providing direct, local crystallographic insight into hydrate dehydration, this work demonstrates how surface-controlled mass loss, morphological changes, and lattice orientation jointly govern solid-state transformations in molecular hydrates. More broadly, it establishes low-dose SED as an effective approach for probing dynamic phase transformations in beam-sensitive molecular crystals.

cond-mat.mtrl-sci↗

arXiv2016

Single-atom spectroscopy of phosphorus dopants implanted into graphene

One of the keys behind the success of the modern semiconductor technology has been the ion implantation of silicon, which allows its electronic properties to be tailored. For similar purposes, heteroatoms have been introduced into carbon nanomaterials both during growth and using post-growth methods. However, due to the nature of the samples, it has been challenging to determine whether the heteroatoms have been incorporated into the lattice as intended, with direct observations so far being limited to N and B dopants, and incidental Si impurities. Furthermore, ion implantation of these materials is more challenging due to the requirement of very low ion energies and atomically clean surfaces. Here, we provide the first atomic-resolution imaging and electron energy loss spectroscopy (EELS) evidence of phosphorus atoms incorporated into the graphene lattice by low-energy ion irradiation. The measured P L-edge response of an single-atom EELS spectrum map shows excellent agreement with an ab initio spectrum simulation, conclusively identifying the P in a buckled substitutional configuration. Our results demonstrate the viability of phosphorus as a lattice dopant in $sp^2$-bonded carbon structures and provide its unmistakeable fingerprint for further studies.

cond-mat.mtrl-sci↗