arXiv subjects

Riley Hanus

Publications and source records attributed to Riley Hanus.

3 recordsLinked to original sources

arXiv2026

Probing Non-Equilibrium Grain Boundary Dynamics with XPCS and Domain-Adaptive Machine Learning

Grain-boundary (GB) dynamics control the stability, mechanical, and functional response of nanocrystalline materials, but direct experimental access to their slow non-equilibrium motion has been limited. Here we establish X-ray photon correlation spectroscopy (XPCS), combined with domain-adaptive machine learning, as a quantitative probe of GB dynamics. Temperature- and grain-size-dependent two-time XPCS measurements in nanocrystalline silicon reveal pronounced departures from time-translation invariance, showing that GB relaxation can remain far from equilibrium over experimental timescales. However, direct extraction of quantitative physical information from these high-dimensional, noisy fluctuation maps faces a significant challenge. To overcome this barrier, we develop a semi-supervised learning framework that transfers physical parameter labels from continuum simulations to unlabeled experimental XPCS maps through domain-adaptive representation alignment. This AI-augmented approach enables the extraction of key kinetic parameters, including bulk diffusivity, GB stiffness, and effective GB concentration, directly from experimental XPCS measurements. Our results show how machine learning can transform indirect fluctuation signals into quantitative materials dynamics, providing a general route to study non-equilibrium defect motion in solids.

cond-mat.mtrl-sci↗

arXiv2021

Thermal Resistance at a Twist Boundary and Semicoherent Heterointerface

Traditional models of interfacial phonon scattering, including the acoustic mismatch model (AMM) and diffuse mismatch model (DMM), take into account the bulk properties of the material surrounding the interface, but not the atomic structure and properties of the interface itself. Here, we derive a theoretical formalism for the phonon scattering at a dislocation grid, or two interpenetrating orthogonal arrays of dislocations, as this is the most stable structure of both the symmetric twist boundary and semicoherent heterointerface. With this approach, we are able to separately examine the contribution to thermal resistance due to the step function change in acoustic properties and due to interfacial dislocation strain fields, which induces diffractive scattering. Both low-angle Si-Si twist boundaries and the Si-Ge heterointerfaces are considered here and compared to previous experimental and simulation results. This work indicates that scattering from misfit dislocation strain fields doubles the thermal boundary resistance of Si-Ge heterointerfaces compared to scattering due to acoustic mismatch alone. Scattering from grain boundary dislocation strain fields is predicted to dominate the thermal boundary resistance of Si-Si twist boundaries. This physical treatment can guide the thermal design of devices by quantifying the relative importance of interfacial strain fields, which can be engineered via fabrication and processing methods, versus acoustic mismatch, which is fixed for a given interface. Additionally, this approach captures experimental and simulation trends such as the dependence of thermal boundary resistance on the grain boundary angle and interfacial strain energy.

cond-mat.mtrl-sci↗

arXiv2019

Analytical Models of Phonon-Point Defect Scattering

Point defects exist widely in engineering materials and are known to scatter vibrational modes to reduce thermal conductivity. The Klemens description of point defect scattering is the most prolific analytical model for this effect. This work reviews the essential physics of the model and compares its predictions to first principles results for isotope and alloy scattering, demonstrating the model as a useful materials design metric. A treatment of the scattering parameter ($\Gamma$) for a multiatomic lattice is recommended and compared to other treatments presented in literature, which have been at times misused to yield incomplete conclusions about the system's scattering mechanisms. Additionally, we demonstrate a reduced sensitivity of the model to the full phonon dispersion and discuss its origin. Finally, a simplified treatment of scattering in alloy systems with vacancies and interstitial defects is demonstrated to suitably describe the potent scattering strength of these off-stoichiometric defects.

cond-mat.mtrl-sci↗