arXiv subjects

Ritu Gupta

Publications and source records attributed to Ritu Gupta.

At least 19 recordsLinked to original sources

arXiv2026

Observation of linear magnetoresistance and planar Hall effect in the Dirac semimetal PdTe

PdTe is a Dirac semimetal that also exhibits superconductivity, providing an intriguing platform to explore topological superconductivity and unconventional magnetotransport phenomena. While the superconducting properties of PdTe have been extensively studied in recent years, the detailed magnetotransport phenomena have remained unexplored. Here, we present the first observation of linear magnetoresistance (LMR) and the planar Hall effect (PHE) in a high-quality single crystal of PdTe. We observe temperature-dependent unsaturated LMR in both in-plane ($B \parallel I$) and out-of-plane ($B \perp I$) configurations. The magnetoresistance (MR) shows a crossover from parabolic to linear dependence at the critical field Bc, and detailed analysis indicates that disorder-driven mobility fluctuations are the origin rather than the Abrikosov quantum-limit mechanism. Furthermore, prominent PHE has been observed by rotating the magnetic field within the plane of the sample. The detailed analysis of the field and temperature dependence of PHE-amplitude, along with the parametric plot, suggests that PHE originates predominantly from the anisotropic orbital magnetoresistance rather than the chiral anomaly. Our results demonstrate that although the Dirac point is close to the Fermi level, the observed LMR and PHE in the Dirac semimetal PdTe can be understood within a semiclassical transport framework, highlighting the importance of distinguishing between topological and conventional classical transport mechanisms in topological materials

cond-mat.mes-hall↗

arXiv2026

Type-II superconductivity in the Dirac semimetal PdTe2

We report on the microscopic superconducting properties of the Dirac semimetal PdTe2. In this study, we have focused on mosaic crystals of PdTe2, and used detailed zero field and transverse field muon spin relaxation/rotation ($\mu$SR), ac-magnetic susceptibility, and resistivity measurements to investigate their superconducting properties. The magnetic susceptibility measurements reveal two superconducting transition temperatures at 1.8 and 1.6~K, respectively, in agreement with earlier reports. In contrary to these reports, we find that these mosaic PdTe2 crystals, are not type-I, but rather type-II superconductors. In fact, we observe the clear manifestation of a flux line lattice through a clear diamagnetic shift and Gaussian broadening of the Fourier spectra in the superconducting state. This behavior is likely caused by the disorder in the mosaic crystals of PdTe2 studied here. Our analysis of the superconducting order parameter by the means of temperature dependent magnetic penetration depth $\lambda(T)$ reveals a fully gapped superconducting state that can be well-fitted using an s-wave symmetric gap. We find that PdTe2 is a promising model system for the investigation and interplay of non-trivial topology, surface superconductivity, and type-II bulk superconductivity in a van-der-Waals material. Moreover, our results indicate that the superconductivity in this material can be easily modified from type-I to type-II by disorder in the system.

cond-mat.supr-con↗

arXiv2025

Pressure tuning of competing interactions on a honeycomb lattice

Magnetic exchange interactions are mediated via orbital overlaps across chemical bonds. Thus, modifying the bond angles by physical pressure or strain can tune the relative strength of competing interactions. Here we present a remarkable case of such tuning between the Heisenberg (J) and Kitaev (K) exchange, which respectively establish magnetically ordered and spin liquid phases on a honeycomb lattice. We observe a rapid suppression of the Neel temperature (TN) with pressure in Ag3LiRh2O6, a spin-1/2 honeycomb lattice with both J and K couplings. Using a combined analysis of x-ray data and first-principles calculations, we find that pressure modifies the bond angles in a way that increases the |K/J| ratio and thereby suppresses TN. Consistent with this picture, we observe a spontaneous onset of muon spin relaxation (muSR) oscillations below TN at low pressure, whereas in the high-pressure phase, oscillations appear only when T < TN/2. Unlike other candidate Kitaev materials, Ag3LiRh2O6 is tuned toward a quantum critical point by pressure while avoiding a structural dimerization in the relevant pressure range.

cond-mat.str-el↗

arXiv2025

Influence of pressure on properties of multi-gap type-I superconductor BeAu

We report on studies of the superconducting and normal state properties of the noncentrosymmetric superconductor BeAu under hydrostatic pressure conditions. The room-temperature equation of state (EOS) reveals the values of the bulk modulus ($B_0$) and its first derivative ($B^\prime_0$) at ambient pressure to be $B_0 \simeq 132$~GPa and $B^\prime_0 \simeq 30$, respectively. Up to the highest pressures studied ($p \simeq 2.2$~GPa), BeAu remains a multi-gap type-I superconductor. The analysis of $B_{\rm c}(T, p)$ data within the self-consistent two-gap approach suggests the presence of two superconducting energy gaps, with the gap-to-$T_{\rm c}$ ratios $\Delta_1/k_{\rm B}T_{\rm c} \sim 2.3$ and $\Delta_2/k_{\rm B}T_{\rm c} \sim 1.1$ for the larger and smaller gaps, respectively [$\Delta = \Delta(0)$ is the zero-temperature value of the gap and $k_{\rm B}$ is the Boltzmann constant]. With increasing pressure, $\Delta_1/k_{\rm B}T_{\rm c}$ increases while $\Delta_2/k_{\rm B}T_{\rm c}$ decreases, suggesting that pressure enhances (weakens) the coupling strength between the superconducting carriers within the bands where the larger (smaller) superconducting energy gap has opened. The superconducting transition temperature $T_{\rm c}$, \textcolor{black}{the zero-temperature values of the superconducting gaps $\Delta_1$ and $\Delta_2$} and the zero-temperature value of the thermodynamic critical field $B_{\rm c}(0)$ decrease with increasing pressure, with the rates of ${\rm d}T_{\rm c}/{\rm d}p \simeq -0.195$~K/GPa, \textcolor{black}{${\rm d}\Delta_1/{\rm d}p \simeq -0.034$~meV/GPa, ${\rm d}\Delta_2/{\rm d}p \simeq -0.029$~meV/GPa,} and ${\rm d}B_{\rm c}(0)/{\rm d}p = -2.65(1)$~mT/GPa, respectively. The measured $B_{\rm c}(0)$ values plotted as a function of $T_{\rm c}$ follow an empirical scaling relation established for conventional type-I superconductors.

cond-mat.supr-con↗

arXiv2024

Spin-controlled Electron transport in Chiral Molecular Assemblies for Various Applications

The chirality-induced spin selectivity (CISS) effect has garnered significant interest in the field of molecular spintronics due to its potential for creating spin-polarized electrons without the need for a magnet. Recent studies devoted to CISS effects in various chiral materials demonstrate exciting prospects for spintronics, chiral recognition, and quantum information applications. Several experimental studies have confirmed the applicability of chiral molecules towards spin-filtering properties, influencing spin-polarized electron transport, and photoemission. Researchers aim to predict CISS phenomena and apply this concept to practical applications by compiling experimental results and enhancing understanding of the CISS effect. To expand the possibilities of spin manipulation and create new opportunities for spin-based technologies, researchers are diligently exploring different chiral organic and inorganic materials for probing the CISS effect. This ongoing research holds promise for developing novel spin-based technologies and advancing the understanding of the intricate relationship between chirality and electron spin. This review showcases the remarkable CISS effect and its impact on spintronics, as well as its relevance in various other scientific areas.

cond-mat.mtrl-sci↗

arXiv2023

Electric Field-induced Charge Transport in Redox-active Molecular Junctions

The formation of well-defined three-dimensional (3D) redox-active molecular nanostructures at the electrode surfaces may open additional routes to achieve higher conductance in molecular junctions (MJs). We report here experimental and theoretical charge transport analysis on electroactive ruthenium(II)-tri(phenanthroline) [Ru(Phen)3]-based molecular junctions covalently grown on patterned ITO electrode. Thicknesses of the molecular layers are varied between 4 to 13 nm, thanks to the potential-driven electrochemical technique to achieve it. A thin layer of Al was deposited on top contact over ITO/ Ru(Phen)3 to fabricate large-area solid-state molecular junctions with a stacking configuration of ITO/[Ru(Phen)3]4nm, 10nm, 13nm/Al. The electrified molecular junctions show LUMO-mediated electron-driven resonant charge conduction with attenuation in conductance as a function of the length of Ru(Phen)3 layers (\b{eta} = 0.48 to 0.60 nm-1). Molecular junctions consisting of 4 nm Ru(Phen)3 layers follow quantum tunneling, while the thicker junctions (10, and 13 nm) follow Poole-Frenkel and electric-field induced charge conduction. Considering the energy level of frontier molecular orbitals, Fermi energy of ITO, and Al contact, a mechanism of symmetric current-voltage features with respect to the bias-polarity is predicted. The present work describes a simple, controllable, low-cost, and versatile approach to fabricating 3D molecular assembly for mimicking conventional electronic functions.

cond-mat.mtrl-sci↗

arXiv2023

The Multi-modality Cell Segmentation Challenge: Towards Universal Solutions

Cell segmentation is a critical step for quantitative single-cell analysis in microscopy images. Existing cell segmentation methods are often tailored to specific modalities or require manual interventions to specify hyper-parameters in different experimental settings. Here, we present a multi-modality cell segmentation benchmark, comprising over 1500 labeled images derived from more than 50 diverse biological experiments. The top participants developed a Transformer-based deep-learning algorithm that not only exceeds existing methods but can also be applied to diverse microscopy images across imaging platforms and tissue types without manual parameter adjustments. This benchmark and the improved algorithm offer promising avenues for more accurate and versatile cell analysis in microscopy imaging.

eess.IV↗

arXiv2023

Fabrication of soft bio-spintronic devices for probing the CISS effect

Bio-spinterfaces present numerous opportunities to study spintronics across the biomolecules attached to (ferro)magnetic electrodes. While it offers various exciting phenomena to investigate, it's simultaneously challenging to make stable bio-spinterfaces, as biomolecules are sensitive to many factors that it encounters during thin-film growth to device fabrication. The chirality-induced spin-selectivity (CISS) effect is an exciting discovery demonstrating an understanding that a specific electron's spin (either UP or DOWN) passes through a chiral molecule. The present work utilizes Ustilago maydis Rvb2 protein, an ATP-dependent DNA helicase (also known as Reptin) for the fabrication of bio-spintronic devices to investigate spin-selective electron transport through protein. Ferromagnetic materials are well-known for showing spin-polarization, which many chiral and biomolecules can mimic. We report spin-selective electron transmission through Rvb2 that exhibits 30% spin polarization at a low bias (+ 0.5 V) in a device configuration, Ni/Rvb2 protein/ITO measured under two different magnetic configurations. Our findings demonstrate that biomolecules can be put in circuit components without any expensive vacuum deposition for the top contact. Thus, it holds a remarkable potential to advance spin-selective electron transport in other biomolecules such as proteins, and peptides for biomedical applications.

cond-mat.mtrl-sci↗

arXiv2023

Dipole-moment induced capacitance in nanoscale molecular junctions

Nanoscale molecular junctions are celebrated nanoelectronic devices for mimicking several electronic functions including rectifiers, sensors, wires, switches, transistors, and memory but capacitive behavior is nearly unexplored. Capacitors are crucial energy storage devices that store energy in the form of electrical charges. A capacitor utilizes two electrical conductors separated by a dielectric material. However, many oxides-based dielectrics are well-studied for integrating capacitors, however, capacitors comprised of thin-film molecular layers are not well-studied. The present work describes electrochemically grafted thin films of benzimidazole (BENZ) grown on patterned ITO electrodes on which a 50 nm Al is deposited to fabricate large-scale (500 x 500 micron2) molecular junctions. The nitrogen and sulfur-containing molecular junctions, ITO/BENZ/Al act as a parallel-plate capacitor with a maximum capacitance of ~59.6 to 4.79 microFcm-2. The present system can be an excellent platform for molecular charge storage for future energy applications.

physics.app-ph↗

arXiv2023

Nanoscale molecular electrochemical supercapacitors

Due to the shorter channel length allowing faster ion/charge movement, nanoscale molecular thin films can be attractive electronic components for next-generation high-performing energy storage devices. However, controlling chemical functionalization and achieving stable electrode-molecule interfaces at the nanoscale via covalent functionalization for low-voltage operational, ultrafast charging/discharging remains a challenge. Herein, we present a simple, controllable, scalable, low-cost, and versatile electrochemical grafting approach to modulate chemical and electronic properties of graphite rods (GRs) that are extracted from low-cost EVEREADY cells (1.5 US $ for 10 cells of 1.5 V). On the ANT-modified GR (ANT/GR), the total capacitance unveils 350-fold enhancement as compared to an unmodified GR tested with 0.1 M H2SO4 electrolyte ensured by both potentiostatic and galvanostatic measurements. Such enhancement in capacitance is attributed to the contribution from the electrical double layer and Faradaic charge transfer. Due to higher conductivity, anthracene molecular layers possess more azo groups (-N=N-) over pyrene, and naphthalene molecular films during the electrochemical grafting, which is key to capacitance improvements. The ultra-low-loading nanofilms expose high surface area leading to extremely high energy density. The nanoscale molecular films (~ 23 nm thickness) show exceptional galvanostatic charge-discharge cycling stability (10,000) that operates at low potential. Electrochemical impedance spectroscopy was performed along with the DC measurements to unravel in-depth charge storage performances. Electrochemically grafted molecular films on GR show excellent balance in capacitance and electrical conductivity, high diffusion coefficient toward ferrocene, and can easily be synthesized in good yield on rigid to flexible electrodes.

physics.app-ph↗

arXiv2022

Ferrocene as an iconic redox marker: from solution chemistry to molecular electronic devices

Ferrocene, since its discovery in 1951, has been extensively exploited as a redox probe in a variety of processes ranging from solution chemistry, medicinal chemistry, supramolecular chemistry, surface chemistry to solid-state molecular electronic and spintronic circuit elements to unravel electrochemical charge-transfer dynamics. Ferrocene represents an extremely chemically and thermally stable, and highly reproducible redox probe that undergoes reversible one-electron oxidation and reduction occurring at the interfaces of electrode/ferrocene solution in response to applied anodic and cathodic potentials, respectively. It has been almost 70 years after its discovery and has become one of the most widely studied and model organometallic compounds not only for probing electrochemical charge-transfer process but also as molecular building blocks for the synthesis of chiral organometallic catalysts, potential drug candidates, polymeric compounds, electrochemical sensors, to name a few. Ferrocene and its derivatives have been a breakthrough in many aspects due to its versatile reactivity, fascinating chemical structures, unconventional metal-ligand coordination, and the magic number of electrons (18 e-). The present review discusses the recent progress made towards ferrocene-containing molecular systems exploited for redox reactions, surface attachment, spin-dependent electrochemical process to probe spin polarization, photo-electrochemistry, and integration into prototype molecular electronic devices. Overall, the present reviews demonstrate a piece of collective information about the recent advancements made towards the ferrocene and its derivatives that have been utilized as iconic redox markers.

physics.chem-ph↗

arXiv2022

Recent advances in inorganic oxides-based resistive random-access memory devices

Memory has always been a building block element for information technology. Emerging technologies such as artificial intelligence, big data, the internet of things, etc., require a novel kind of memory technology that can be energy efficient and have an exception data retention period. Among several existing memory technologies, resistive random-access memory (RRAM) is an answer to the above question as it is necessary to possess the combination of speed of RAM and nonvolatility, thus proving to be one of the most promising candidates to replace flash memory in next-generation non-volatile RAM applications. This review discusses the existing challenges and technological advancements made with RRAM, including switching mechanism, device structure, endurance, fatigue resistance, data retention period, and mechanism of resistive switching in inorganic oxides material used as a dielectric layer. Finally, a summary and a perspective on future research are presented.

cond-mat.mtrl-sci↗

arXiv2022

Current state and perspectives of nanoscale molecular rectifiers

The concept of utilizing a molecule bridged between two electrodes as a stable rectifying device with the possibility of commercialization is a "holy grail" of molecular electronics. Molecular rectifiers do not only exploit the electronic function of the molecules but also offer the possibility of their direct integration into specific nano-electronic circuits. However, even after nearly three decades of extensive experimental and theoretical work, the concept of molecular rectifiers still has many unresolved aspects concerning both the fundamental understanding of the underlying phenomena and the practical realization. At the same time, recent advancements in molecular systems with rectification ratios exceeding 105 are highly promising and competitive to the existing silicon-based devices. Here, we provide an overview and critical analysis of the current state and recent progress in molecular rectification relying on the different design concepts and material platforms such as single molecules, self-assembled monolayers, molecular multilayers, heterostructures, and metal-organic frameworks and coordination polymers. The involvement of crucial parameters such as the energy of molecular orbitals, electrode-molecule coupling, and asymmetric shifting of the energy levels will be discussed. Finally, we conclude by critically addressing the challenges and prospects for progress in the field and perspectives for the commercialization of molecular rectifiers.

cond-mat.mtrl-sci↗

arXiv2022

Microscopic evidence for anisotropic multigap superconductivity in the CsV$_3$Sb$_5$ kagome superconductor

The recently discovered kagome superconductor CsV$_3$Sb$_5$ ($T_c \simeq 2.5$ K) has been found to host charge order as well as a non-trivial band topology, encompassing multiple Dirac points and probable surface states. Such a complex and phenomenologically rich system is, therefore, an ideal playground for observing unusual electronic phases. Here, we report on microscopic studies of its anisotropic superconducting properties by means of transverse-field muon spin rotation ($μ$SR) experiments. The temperature dependences of the in-plane and out-of-plane components of the magnetic penetration depth $λ_{ab}^{-2}(T)$ and $λ_{c}^{-2}(T)$ indicate that the superconducting order parameter exhibits a two-gap ($s+s$)-wave symmetry, reflecting the multiple Fermi surfaces of CsV3Sb5. The multiband nature of its superconductivity is further validated by the different temperature dependences of the anisotropic magnetic penetration depth $γ_λ(T)$ and upper critical field $γ_{\rm B_{c2}}(T)$, both in close analogy with the well known two-gap superconductor MgB$_2$. Remarkably, the high value of the $T_c/λ^{-2}(0)$ ratio in both field orientations strongly suggests the unconventional nature of superconductivity. The relaxation rates obtained from zero field $μ$SR experiments do not show noticeable change across the superconducting transition, indicating that superconductivity does not break time reversal symmetry.

cond-mat.supr-con↗

arXiv2022

Charge order breaks time-reversal symmetry in CsV$_3$Sb$_5$

The recently discovered vanadium-based kagome metals $A$V$_{3}$Sb$_{5}$ ($A$~=~K,~Rb,~Cs) exhibit superconductivity at low-temperatures and charge density wave (CDW) order at high-temperatures. A prominent feature of the charge ordered state in this family is that it breaks time-reversal symmetry (TRSB), which is connected to the underlying topological nature of the band structure. In this work, a powerful combination of zero-field and high-field muon-spin rotation/relaxation is used to study the signatures of TRSB of the charge order in CsV$_3$Sb$_5$, as well as its anisotropic character. By tracking the temperature evolution of the in-plane and out-of-plane components of the muon-spin polarization, an enhancement of the internal field width sensed by the muon-spin ensemble was observed below $T_{\rm TRSB}=T_{\rm CDW}\simeq95$~K. Additional increase of the internal field width, accompanied by a change of the local field direction at the muon site from the $ab$-plane to the $c$-axis, was detected below $T^\ast\simeq30$~K. Remarkably, this two-step feature becomes well pronounced when a magnetic field of 8~T is applied along the crystallographic $c-$axis, thus indicating a field-induced enhancement of the electronic response at the CDW transition. These results point to a TRSB in CsV$_3$Sb$_5$ by charge order with an onset of ${\simeq}~95$~K, followed by an enhanced electronic response below ${\simeq}~30$~K. The observed two-step transition is discussed within the framework of different charge-order instabilities, which, in accordance with density functional theory calculations, are nearly degenerate in energy.

cond-mat.str-el↗

arXiv2022

Two types of charge order in the superconducting kagome material CsV$_3$Sb$_5$

The kagome metals of the family $A$V$_3$Sb$_5$, featuring a unique structural motif, harbor an array of intriguing phenomena such as chiral charge order and superconductivity. CsV$_3$Sb$_5$ is of particular interest because it displays a double superconducting dome in the region of the temperature-pressure phase diagram where charge order is still present. However, the microscopic origin of such an unusual behavior remains an unsolved issue. Here, to address it, we combine high-pressure, low-temperature muon spin relaxation with first-principles calculations. We observe a pressure-induced threefold enhancement of the superfluid density, which also displays a double peak feature, similar to the superconducting critical temperature. This leads to three distinct regions in the phase diagram, each of which features distinct slopes of the linear relation between superfluid density and the critical temperature. These results are attributed to a possible evolution of the charge order pattern from the superimposed tri-hexagonal Star-of-David phase at low pressures (within the first dome) to the staggered tri-hexagonal phase at intermediate pressures (between the first and second domes). Our findings suggest a change in the nature of the charge ordered state across the phase diagram of CsV$_3$Sb$_5$, with varying degrees of competition with superconductivity.

cond-mat.supr-con↗

arXiv2022

Unconventional pressure dependence of the superfluid density in the nodeless topological superconductor $α$-PdBi$_2$

We investigated the superconducting properties of the topological superconductor $α$--PdBi$_2$ at ambient and external pressures up to 1.77~GPa using muon spin rotation ($μ$SR) experiments. The ambient pressure measurements evince a fully gapped $s$-wave superconducting state in the bulk of the specimen. AC magnetic susceptibility and $μ$SR measurements manifest a continuous suppression of $T_{\rm c}$ with increasing pressure. In parallel, we observed a significant decrease of superfluid density by $\sim$20\% upon application of external pressure. Remarkably, the superfluid density follows linear relation with $T_{\rm c}$ which was found before in some unconventional topological superconductors and hole doped cuprates. This finding signals a possible crossover from BEC to BCS in $α$--PdBi$_2$.

cond-mat.supr-con↗

arXiv2021

Optical setup for a piston-cylinder type pressure cell: a double-volume approach

Measurement of the absolute value of the applied pressure in high-pressure muon and neutron experiments is a complicated task. It requires both the presence of a calibration material inside the sample volume as well as additional time for refining the response of the calibrant. Here we describe the use of optical calibrants for precise determination of the pressure value inside the piston-cylinder clamp cells. Utilizing the concept of separate volumes for the sample and the optical media, a new setup for conducting in-situ pressure measurements has been successfully tested. Pressures in both the `sample' and the `optical' volumes were proved to be the same within experimental accuracy. The use of SrB$_{4}$O$_7$:(0.01 Sm$^{2+}$, 0.03 Eu$^{2+}$) as a pressure calibrant allows for a high accuracy of pressure determination by considering up to eight fluorescence lines.

cond-mat.other↗