arXiv subjects

Ritu Srivastava

Publications and source records attributed to Ritu Srivastava.

6 recordsLinked to original sources

arXiv2025

Reconfigurable Filamentary Conduction in Thermally Stable Zeolitic Imidazolate Framework (ZIF-8) Resistive Switching Devices

The rapid growth of digital technology has driven the need for efficient storage solutions, positioning memristors as promising candidates for next-generation non-volatile memory (NVM) due to their superior electrical properties. Organic and inorganic materials each offer distinct advantages for resistive switching (RS) performance, while hybrid materials like metal-organic frameworks (MOFs) combine the strengths of both. In this study, we present a resistive random-access memory (ReRAM) device utilizing zeolitic imidazolate framework (ZIF-8), a MOF material, as the resistive switching layer. The ZIF-8 film was synthesized via a simple solution process method at room temperature and subsequently characterized. The Al/ZIF-8/ITO device demonstrates bipolar resistive switching behaviour with an on/off resistance ratio of 100, stable retention up to 10000 seconds, and consistent performance across 60 cycles while exhibiting robust thermal stability from -20 C to 100 C. Low-frequency noise and impedance spectroscopy measurements suggest a filamentary switching mechanism. Additionally, the memory state can be tuned by adjusting the reset voltage, pointing to potential as multi-level memory. Potentiation and depression experiments further highlight the devices promise for neuromorphic applications. With high stability, tunability, and strong performance, the ZIF-8 based ReRAM shows great promise for advanced NVM and neuromorphic computing applications.

cond-mat.mtrl-sci↗

arXiv2017

High yield synthesis and liquid exfoliation of two-dimensional belt like hafnium disulphide

Producing monolayers and few-layers in high yield with environment-stability is still a challenge in hafnium disulphide (HfS2), which is a layered two-dimensional material of group-IV transition metal dichalcogenides, to reveal its unlocked electronic and optoelectronic applications. For the first time, to the best of our knowledge, we demonstrate a simple and cost-effective method to grow layered belt-like nano-crystals of HfS2 with surprisingly large interlayer spacing followed by its chemical exfoliation. Various microscopic and spectroscopic techniques reveal these as-grown crystals exfoliate into single or few layers in some minutes using solvent assisted ultrasonification method in N-Cyclohexyl-2-pyrrolidone. The exfoliated nanosheets of HfS2 exhibit an indirect bandgap of 1.3 eV with high stability against ambient degradation. Further, we demonstrate that these nanosheets holds potential for electronic applications by fabricating field-effect transistors based on few layered HfS2 exhibiting field-effect mobility of 0.95 cm2/V-s with a high current modulation ratio (Ion/Ioff) of 10^4 in ambient. The method is scalable and has potential significance for both academy and industry.

cond-mat.mtrl-sci↗

arXiv2017

Unique Morphologies of Molybdenum Disulphide: Sheets, Diffusion Limited Cluster Aggregates and Fractals, by Langmuir- Blodgett Assembly for Advanced Electronics

A plethora of different morphologies are fabricated by the self assembly of molybdenum disulphide (MoS2) exfoliated flakes with the help of Langmuir-Blodgett (LB) technique at the liquid/air interface. The MoS2 flakes are chemically exfoliated in various solvents but their stable sheet like assembly on substrate is achieved only in case of the flakes exfoliated in dimethylformamide. The density of the monolayer sheets is finely controlled by the surface pressure while the stabilization of MoS2 LB film onto the water subphase results in its self assembly into diffusion limited cluster aggregates and fractals. We further demonstrate the effect of excitation on the emission of LB assembled MoS2 sheets which reveals the existence of a new exciton corresponding to 2.43 eV apart from the direct bandgap emission at 1.86 eV. Finally, field effect transistors are fabricated on SiO2/Si and a mobility of 7.4 cm2V-1s-1 with a current on-off ratio of 10^5 is obtained. This work provides a new approach for the systematic deposition of the solution processed exfoliated flakes on large scale as well as formation of pattern structures in a natural way.

cond-mat.mtrl-sci↗

arXiv2016

Large Area Fabrication of Semiconducting Phosphorene by Langmuir Blodgett Assembly

Although a considerable number of solvent based methodologies have been developed for exfoliating black phosphorus, so far there are no reports on controlled organization of these exfoliated nanosheets on substrates. Here, for the first time to the best of our knowledge, a mixture of N-Methyl-2-pyrrolidone (NMP) and deoxygenated water is employed as a subphase in Langmuir Blodgett (LB) trough for assembling the nanosheets followed by their deposition on substrates and studied its field effect transistor (FET) characteristics. Electron microscopy reveals the presence of densely aligned, crystalline, ultra-thin sheets of pristine phosphorene having lateral dimensions larger than hundred of microns. Furthermore, these assembled nanosheets retain their electronic properties and show a high current modulation of 10^4 at room temperature in FET devices. The proposed technique provides semiconducting phosphorene thin films that are amenable for large area applications.

cond-mat.mtrl-sci↗

arXiv2014

Tunable Solid State and Flexible Graphene Electronics

We demonstrate tunable solid state and flexible graphene field effect devices (FEDs) fabricated using a poly(methylmethacrylate) (PMMA) and lithium fluoride (LiF) composite dielectric. Increasing the concentration of LiF in the composite dielectric reduces the operating gate voltages significantly from 10 V to 1 V required leading to a decrease in resistance. Electron and hole mobility of 350 and 310 cm2/Vs at VD = -5 V are obtained for graphene FEDs with 10 % LiF concentration in the composite. Using composite dielectric also enabled excellent performance on flexible substrates without any significant change in mobility and resistance. Flexible FEDs with only 5 % and 12 % variation in mobility for 300 and 750 bending are obtained.

cond-mat.mes-hall↗

arXiv2014

Effect of charge carrier relaxation during hopping process on electroluminescence in organic solids

Energetic disorder in disordered organic solids has been found to alter their physical parameters. Here, we have demonstrated, by means of Monte-Carlo simulation and experiments, that the electroluminescence (EL) spectrum is dependent on energetic disorder. This dependence has been attributed to the charge carrier relaxation during hopping process. The dependence of EL spectrum on energetic disorder makes it temperature dependent and temperature dependence has been found to vary with energetic disorder in a variety of materials. The simulation has been performed by taking the relaxation of charge carriers via transport energy in the Gaussian density of states. An analytical equation was established for spectral shift as a function of transport energy.

cond-mat.mtrl-sci↗