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Robert F. Klie

Publications and source records attributed to Robert F. Klie.

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Superconductivity at the metal-insulator phase boundary in a bulk nickelate at ambient pressure

The discovery of superconductivity in nickelates has seeded a new field for exploring unconventional superconductivity in transition metal oxides. However, to date superconductivity has only been realized in thin films or under extreme pressure in the bulk. Here we report signatures of superconductivity at ambient pressure in bulk nickelate single crystals of (La1-xPrx)4Ni3O8 and (La1-xYx)4Ni3O8, whose crystal structure comprises interleaving trilayers of square-planar nickel oxide and fluorite-like spacer layers. The parent compound La4Ni3O8 exhibits an insulating ground state, where electrons order into intertwined, insulating charge/spin stripes. Substitution of smaller lanthanide ions disrupts this order, eventually leading to a metallic ground-state. We find that superconductivity emerges in a narrow window proximate to the insulator-metal phase boundary, where both metallic and charge-stripe phases co-exist. The observed low volume-fraction superconductivity is non-percolative, suggesting the prospect of filamentary superconductivity nucleated at the boundary between these phases. However, intergrowth defects that approximate the known infinite layer nickelates are observed in TEM, leaving open the possibility that superconductivity resides here rather than in the trilayer matrix. Remarkably, the electronic phase diagrams of both the Y and Pr series coincide when parameterized by the volume of the fluorite like spacer layers, revealing that this steric parameter profoundly modifies the nickel oxide trilayer electronic structure. Our results identify better understanding of the co-existence region between metallic and charge-ordered phases as a priority for expanding the range of bulk, ambient-pressure nickelate superconductivity and establish spacer-layer engineering as a design tool for exploring this regime of phase competition.

cond-mat.supr-con

Atomic-Scale Observation of Symmetry Breaking in Altermagnetic MnTe

The recent discovery of altermagnetism has sparked growing interest in compensated magnetic systems as promising platforms for highly scalable spintronics. Altermagnetism is a distinct magnetic order where opposite spin sublattices are connected by rotation, yielding zero net magnetization but momentum-dependent spin splitting. To date, experimental verification of altermagnetic order has been achieved predominantly through bulk-sensitive techniques, including spin-dependent electronic spectra and transport responses. However, direct atomic-scale evidence that explicitly correlates crystal symmetry, local structural distortions, and magnetic ordering has remained unexplored. Here, we report the direct atomic-scale observation of coexisting polar distortions and altermagnetic order in MnTe, combining atomic resolution scanning transmission electron microscopy (STEM) imaging with electron magnetic chiral dichroism (EMCD) measurements. We reveal that MnTe is not an ideal uniform P63/mmc g-wave altermagnet at the atomic scale. Instead, it hosts ubiquitous inversion-symmetry-breaking distortions that lower the spin-space-group (SSG) symmetry, admits d-wave altermagnetic components, and in lower-symmetry regimes, even allow s-wave spin splitting (net magnetization). The coexistence of ferroelectric signatures and altermagnetic order establishes local lattice symmetry in MnTe as a control knob for altermagnetic spin splitting, spin current generation, and multiferroic memory applications.

cond-mat.mtrl-sci

Strain Effects in SrHfO$_{3}$ Films Grown by Hybrid Molecular Beam Epitaxy

Perovskite oxides hetero-structures are host to a large number of interesting phenomena such as ferroelectricity and 2D-superconductivity. Ferroelectric perovskite oxides have been of significant interest due to their possible use in MOSFETs and FRAM. SrHfO$_3$ (SHO) is a perovskite oxide with pseudo-cubic lattice parameter of 4.1 $\mathring{A}$ that previous DFT calculations suggest can be stabilized in a ferroelectric P4mm phase, similar to STO, when stabilized with sufficient compressive strain. Additionally, it is insulating, possesses a large band gap, and a high dielectric constant, making it an ideal candidate for oxide electronic devices. In this work, SHO films were grown by hybrid molecular beam epitaxy with a tetrakis(ethylmethylamino)hafnium(IV) source on GdScO$_3$ and TbScO$_3$ substrates. Equilibrium and strained SHO phases were characterized using X-ray diffraction, X-ray absorption spectroscopy, and scanning transmission electron microscopy to determine the perovskite phase of the strained films, with the results compared to density functional theory models of phase stability versus strain. Contrary to past reports, we find that compressively-strained SrHfO$_3$ undergoes octahedral tilt distortions and most likely takes on the I4/mcm phase with the a$^0$a$^0$c$^-$ tilt pattern.

cond-mat.mtrl-sci

Coherent Erbium Spin Defects in Colloidal Nanocrystal Hosts

We demonstrate nearly a microsecond of spin coherence in Er3+ ions doped in cerium dioxide nanocrystal hosts, despite a large gyromagnetic ratio and nanometric proximity of the spin defect to the nanocrystal surface. The long spin coherence is enabled by reducing the dopant density below the instantaneous diffusion limit in a nuclear spin-free host material, reaching the limit of a single erbium spin defect per nanocrystal. We observe a large Orbach energy in a highly symmetric cubic site, further protecting the coherence in a qubit that would otherwise rapidly decohere. Spatially correlated electron spectroscopy measurements reveal the presence of Ce3+ at the nanocrystal surface that likely acts as extraneous paramagnetic spin noise. Even with these factors, defect-embedded nanocrystal hosts show tremendous promise for quantum sensing and quantum communication applications, with multiple avenues, including core-shell fabrication, redox tuning of oxygen vacancies, and organic surfactant modification, available to further enhance their spin coherence and functionality in the future.

cond-mat.mes-hall

Hybrid organic-inorganic two-dimensional metal carbide MXenes with amido- and imido-terminated surfaces

Two-dimensional (2D) transition-metal carbides and nitrides (MXenes) show impressive performance in applications, such as supercapacitors, batteries, electromagnetic interference shielding, or electrocatalysis. These materials combine the electronic and mechanical properties of 2D inorganic crystals with chemically modifiable surfaces, and surface-engineered MXenes represent an ideal platform for fundamental and applied studies of interfaces in 2D functional materials. A natural step in structural engineering of MXene compounds is the development and understanding of MXenes with various organic functional groups covalently bound to inorganic 2D sheets. Such hybrid structures have the potential to unite the tailorability of organic molecules with the unique electronic properties of inorganic 2D solids. Here, we introduce a new family of hybrid MXenes (h-MXenes) with amido- and imido-bonding between organic and inorganic parts. The description of h-MXene structure requires an intricate mix of concepts from the fields of coordination chemistry, self-assembled monolayers (SAMs) and surface science. The optical properties of h-MXenes reveal coherent coupling between the organic and inorganic components. h-MXenes also show superior stability against hydrolysis in aqueous solutions.

cond-mat.mtrl-sci

Ingrained -- An automated framework for fusing atomic-scale image simulations into experiments

To fully leverage the power of image simulation to corroborate and explain patterns and structures in atomic resolution microscopy (e.g., electron and scanning probe), an initial correspondence between the simulation and experimental image must be established at the outset of further high accuracy simulations or calculations. Furthermore, if simulation is to be used in context of highly automated processes or high-throughput optimization, the process of finding this correspondence itself must be automated. In this work, we introduce ingrained, an open-source automation framework which solves for this correspondence and fuses atomic resolution image simulations into the experimental images to which they correspond. We describe herein the overall ingrained workflow, focusing on its application to interface structure approximations, and the development of an experimentally rationalized forward model for scanning tunneling microscopy simulation.

cond-mat.mtrl-sci

Machine-learned impurity level prediction for semiconductors: the example of Cd-based chalcogenides

The ability to predict the likelihood of impurity incorporation and their electronic energy levels in semiconductors is crucial for controlling its conductivity, and thus the semiconductor's performance in solar cells, photodiodes, and optoelectronics. The difficulty and expense of experimental and computational determination of impurity levels makes a data-driven machine learning approach appropriate. In this work, we show that a density functional theory-generated dataset of impurities in Cd-based chalcogenides CdTe, CdSe, and CdS can lead to accurate and generalizable predictive models of defect properties. By converting any semiconductor + impurity system into a set of numerical descriptors, regression models are developed for the impurity formation enthalpy and charge transition levels. These regression models can subsequently predict impurity properties in mixed anion CdX compounds (where X is a combination of Te, Se and S) fairly accurately, proving that although trained only on the end points, they are applicable to intermediate compositions. We make machine-learned predictions of the Fermi-level dependent formation energies of hundreds of possible impurities in 5 chalcogenide compounds, and suggest a list of impurities which can shift the equilibrium Fermi level in the semiconductor as determined by the dominant intrinsic defects. These dominating impurities as predicted by machine learning compare well with DFT predictions, revealing the power of machine-learned models in the quick screening of impurities likely to affect the optoelectronic behavior of semiconductors.

cond-mat.mtrl-sci

Decay of high-energy electron bound states in crystals

High-energy electrons that are used as a probe of specimens in transmission electron microscopy exhibit a complex and rich behavior due to multiple scattering. Among other things, understanding the dynamical effects is needed for a quantitative analysis of atomic-resolution images and spectroscopic data. In this study, state-correlation functions are computed within the multislice approach that allow to elucidate behaviors of transversely bound states in crystals. These states play an important role as a large fraction of current density can be coupled into them via focused electron probes. We show that bound states are generically unstable and decay monoexponentially with crystal depth. Their attenuation is accompanied by a resonant intensity transfer to Bessel-like wavefunctions that appear as Laue rings in the far-field diffraction patterns. Behaviors of bound states are also quantified when thermal effects are included, as well as point defects. This approach helps to bridge the Bloch wave and multisliced electron propagation pictures of dynamical scattering providing new insights into fundamental solutions of the wave equation, and may assist in developing quantitative STEM/TEM imaging techniques.

physics.comp-ph

Experimental verification of orbital engineering at the atomic scale: charge transfer and symmetry breaking in nickelate heterostructures

Epitaxial strain, layer confinement and inversion symmetry breaking have emerged as powerful new approaches to control the electronic and atomic-scale structural properties in complex metal oxides. Nickelate heterostructures, based on RENiO$_3$, where RE is a trivalent rare-earth cation, have been shown to be relevant model systems since the orbital occupancy, degeneracy, and, consequently, the electronic/magnetic properties can be altered as a function of epitaxial strain, layer thickness and superlattice structure. One such recent example is the tri-component LaTiO$_3$-LaNiO$_3$-LaAlO$_3$ superlattice, which exhibits charge transfer and orbital polarization as the result of its interfacial dipole electric field. A crucial step towards control of these parameters for future electronic and magnetic device applications is to develop an understanding of both the magnitude and range of the octahedral network's response towards interfacial strain and electric fields. An approach that provides atomic-scale resolution and sensitivity towards the local octahedral distortions and orbital occupancy is therefore required. Here, we employ atomic-resolution imaging coupled with electron spectroscopies and first principles theory to examine the role of interfacial charge transfer and symmetry breaking in a tricomponent nickelate superlattice system. We find that nearly complete charge transfer occurs between the LaTiO$_3$ and LaNiO$_3$ layers, resulting in a Ni$^{2+}$ valence state. We further demonstrate that this charge transfer is highly localized with a range of about 1 unit cell, within the LaNiO$_3$ layers. The results presented here provide important feedback to synthesis efforts aimed at stabilizing new electronic phases that are not accessible by conventional bulk or epitaxial film approaches.

cond-mat.mtrl-sci

Dynamical control of orbital occupations via a ferroelectric-induced polar state in metallic manganites

The breaking of orbital degeneracy on a transition metal cation and the resulting unequal electronic occupations of these orbitals provide a powerful lever over electron density and spin ordering in metal oxides. Here, we show how to dynamically modulate the orbital populations on Mn atoms at ferroelectric/manganite interfaces by switching the ferroelectric polarization. The change in orbital occupation can be as large as 10\%, greatly exceeding that of bulk manganites. This flippable orbital splitting is in large part controlled by the propagation of ferroelectric polar displacements into the interfacial region, a structural motif absent in the bulk and unique to the interface. We use {\it ab initio} theory, epitaxial thin film growth, and scanning transmission electron microscopy to verify the predicted interfacial polar state and concomitant orbital splittings.

cond-mat.mtrl-sci

Reversible modulation of orbital occupations via an interface-induced state in metallic manganites

The breaking of orbital degeneracy on a transition metal cation and the resulting unequal electronic occupations of these orbitals provide a powerful lever over electron density and spin ordering inmetal oxides. Here, we use ab initio calculations to show that reversibly modulating the orbital populations on Mn atoms can be achieved at ferroelectric/manganite interfaces by the presence of ferroelectric polarization on the nanoscale. The change in orbital occupation can be as large as 10%, greatly exceeding that of bulk manganites. This reversible orbital splitting is in large part controlled by the propagation of ferroelectric polar displacements into the interfacial region, a structural motif absent in the bulk and unique to the interface. We use epitaxial thin film growth and scanning transmission electron microscopy to verify this key interfacial polar distortion and discuss the potential of reversible control of orbital polarization via nanoscale ferroelectrics.

cond-mat.mtrl-sci

Microstructure of strained La2CuO4+delta thin films on varied sub-strates

Layered perovskite La2CuO4+delta(LCO) thin films were epitaxially grown on SrTiO3 (STO) and LaSrAlO4 (LSAO) substrates by atomic-layer-by-layer molecular beam epitaxy. The lattice de-fects and residual strain in these films were investigated by means of transmission electron mi-croscopy and electron energy loss spectroscopy. The LCO films showed a high epitaxial quality with flat interfaces and top surfaces. Misfit dislocations with Burgers vector a<010> and shear defects were frequently observed at or near the film/substrate interfaces and in the films, respec-tively, for all the LCO films. In one LCO film, grown on STO at the highest temperature, 700 oC, was a two layered structure. The top layer was identified as rhombohedral LaCuO2 by electron energy loss spectroscopy combined with electron diffraction. In addition, stacking faults were observed in plane-view micrographs of one LCO film grown on the STO substrate. The residual strains were evaluated from the spacing of misfit dislocations at the film/substrate interface and from the split electron diffraction patterns. Possible mechanisms of strain relaxations are dis-cussed based on the observed defects.

cond-mat.mtrl-sci

The Electronic and Superconducting Properties of Oxygen-Ordered MgB2 compounds of the form Mg2B3Ox

Possible candidates for the Mg2B3Ox nanostructures observed in bulk of polycrystalline MgB2 (Ref.1) have been studied using a combination of Z-contrast imaging, electron energy loss spectroscopy (EELS) and first-principles calculations. The electronic structures, phonon modes, and electron phonon coupling parameters are calculated for two oxygen-ordered MgB2 compounds of composition Mg2B3O and Mg2B3O2, and compared with those of MgB2. We find that the density of states for both Mg2B3Ox structures show very good agreement with EELS, indicating that they are excellent candidates to explain the observed coherent oxygen precipitates. Incorporation of oxygen reduces the transition temperature and gives calculated TC values of 18.3 K and 1.6 K for Mg2B3O and Mg2B3O2, respectively.

cond-mat.supr-con

Measuring the Hole State Anisotropy in MgB2 by Electron Energy-Loss Spectroscopy

We have examined polycrystalline MgB2 by electron energy loss spectroscopy (EELS) and density of state calculations. In particular, we have studied two different crystal orientations, [110] and [001] with respect to the incident electron beam direction, and found significant changes in the near-edge fine-structure of the B K-edge. Density functional theory suggests that the pre-peak of the B K-edge core loss is composed of a mixture of pxy and pz hole states and we will show that these contributions can be distinguished only with an experimental energy resolution better than 0.5 eV. For conventional TEM/STEM instruments with an energy resolution of ~1.0 eV the pre-peak still contains valuable information about the local charge carrier concentration that can be probed by core-loss EELS. By considering the scattering momentum transfer for different crystal orientations, it is possible to analytically separate pxy and pz components from of the experimental spectra With careful experiments and analysis, EELS can be a unique tool measuring the superconducting properties of MgB2, doped with various elements for improved transport properties on a sub-nanometer scale.

cond-mat.supr-con