Searcharxiv⌕ Search

arXiv subjects

Robert G. Moore

Publications and source records attributed to Robert G. Moore.

30 records · Page 2Linked to original sources

Self-regulated growth of candidate topological superconducting parkerite by molecular beam epitaxy

Ternary chalcogenides such as the parkerites and shandites are a broad class of materials exhibiting rich diversity of transport and magnetic behavior as well as an array of topological phases including Weyl and Dirac nodes. However, they remain largely unexplored as high-quality epitaxial thin films. Here, we report the self-regulated growth of thin films of the strong spin-orbit coupled superconductor Pd3Bi2Se2 on SrTiO3 by molecular beam epitaxy. Films are found to grow in a self-regulated fashion, where, in excess Se, the temperature and relative flux ratio of Pd to Bi controls the formation of Pd3Bi2Se2 due to the combined volatility of Bi, Se, and Bi-Se bonded phases. The resulting films are shown to be of high structural quality, the stoichiometry is independent of the Pd:Bi and Se flux ratio and exhibit a superconducting transition temperature of 800 mK and critical field of 17.7 +/- 0.5 mT, as probed by transport as well as magnetometry. Understanding and navigating the growth of the chemically and structurally diverse classes of ternary chalcogenides opens a vast space for discovering new phenomena as well as enabling new applications.

cond-mat.mtrl-sci↗

Anomalously Strong Near-Neighbor Attraction in Doped 1D Cuprate Chains

In the cuprates, one-dimensional chain compounds provide a unique opportunity to understand the microscopic physics due to the availability of reliable theories. However, progress has been limited by the inability to controllably dope these materials. Here, we report the synthesis and spectroscopic analysis of the one-dimensional cuprate Ba$_{2-x}$Sr$_x$CuO$_{3+δ}$ over a wide range of hole doping. Our angle-resolved photoemission experiments reveal the doping evolution of the holon and spinon branches. We identify a prominent folding branch whose intensity fails to match predictions of the simple Hubbard model. An additional strong near-neighbor attraction, which may arise from coupling to phonons, quantitatively explains experiments for all accessible doping levels. Considering structural and quantum chemistry similarities among cuprates, this attraction will play a similarly crucial role in the high-$T_C$ superconducting counterparts

cond-mat.str-el↗

Van der Waals Epitaxy on Freestanding Monolayer Graphene Membrane by MBE

Research on two-dimensional materials has expanded over the past two decades to become a central theme in condensed matter research today. Significant advances have been made in the synthesis and subsequent reassembly of these materials using mechanical methods into a vast array of hybrid structures with novel properties and ever-increasing potential applications. The key hurdles in realizing this potential are the challenges in controlling the atomic structure of these layered hybrid materials and the difficulties in harnessing their unique functionality with existing semiconductor nanofabrication techniques. Here we report on high-quality van der Waals epitaxial growth and characterization of a layered topological insulator on freestanding monolayer graphene transferred to different mechanical supports. This templated synthesis approach enables direct interrogation of interfacial atomic structure of these as-grown hybrid structures and opens a route towards creating device structures with more traditional semiconductor nanofabrication techniques.

cond-mat.mtrl-sci↗

Magic Doping and Robust Superconductivity in Monolayer FeSe on Titanates

The enhanced superconductivity in monolayer FeSe on titanates opens a fascinating pathway towards the rational design of high-temperature superconductors. Utilizing the state-of-the-art oxide plus chalcogenide molecular beam epitaxy systems in situ connected to a synchrotron angle-resolved photoemission spectroscope, epitaxial LaTiO3 layers with varied atomic thicknesses are inserted between monolayer FeSe and SrTiO3, for systematic modulation of interfacial chemical potential.With the dramatic increase of electron accumulation at the LaTiO3-SrTiO3 surface, providing a substantial surge of work function mismatch across the FeSe-oxide interface, the charge transfer and the superconducting gap in the monolayer FeSe are found to remain markedly robust. This unexpected finding indicates the existence of an intrinsically anchored magic doping within the monolayer FeSe systems.

cond-mat.supr-con↗

Strong spin-dephasing in a topological insulator - paramagnet heterostructure

The interface between magnetic materials and topological insulators can drive the formation of exotic phases of matter and enable functionality through manipulation of the strong spin polarized transport. Here, we report that the spin-momentum-locked transport in the topological insulator Bi$_2$Se$_3$ is completely suppressed by scattering at a heterointerface with the kagome-lattice paramagnet, Co$_7$Se$_8$. Bi$_2$Se$_{3-}$Co$_7$Se$_{8-}$Bi$_2$Se$_3$ trilayer heterostructures were grown using molecular beam epitaxy. Magnetotransport measurements revealed a substantial suppression of the weak antilocalization effect for Co$_7$Se$_8$ at thicknesses as thin as a monolayer, indicating a strong dephasing mechanism. Bi$_{2-x}$Co$_x$Se$_3$ films, where Co is in a non-magnetic $3^+$ state, show weak antilocalization that survives to $x = 0.5$, which, in comparison with the heterostructures, suggests the unordered moments of the Co$^{2+}$ act as a far stronger dephasing element. This work highlights several important points regarding spin-polarized transport in topological insulator interfaces and how magnetic materials can be integrated with topological materials to realize both exotic phases as well as novel device functionality.

cond-mat.mtrl-sci↗

Suppression of Charge Density Wave by Substrate Induced Doping on TiSe$_2$/TiO$_2$ Heterostructure

Substrate engineering provides an opportunity to modulate the physical properties of quantum materials in thin film form. Here we report that TiSe$_2$ thin films grown on TiO$_2$ have unexpectedly large electron doping that suppresses the charge density wave (CDW) order. This is dramatically different from either bulk single crystal TiSe$_2$ or TiSe$_2$ thin films on graphene. The epitaxial TiSe$_2$ thin films can be prepared on TiO$_2$ via molecular beam epitaxy (MBE) in two ways: by conventional co-deposition using selenium and titanium sources, and by evaporating only selenium on reconstructed TiO$_2$ surfaces. Both growth methods yield atomically flat thin films with similar physical properties. The electron doping and subsequent suppression of CDW order can be explained by selenium vacancies in the TiSe$_2$ film, which naturally occur when TiO$_2$ substrates are used. This is due to the stronger interfacial bonding that changes the ideal growth conditions. Our finding provides a way to tune the chemical potential of chalcogenide thin films via substrate selection and engineering.

cond-mat.str-el↗

Realization of Quantum Spin Hall State in Monolayer 1T'-WTe2

A quantum spin Hall (QSH) insulator is a novel two-dimensional quantum state of matter that features quantized Hall conductance in the absence of magnetic field, resulting from topologically protected dissipationless edge states that bridge the energy gap opened by band inversion and strong spin-orbit coupling. By investigating electronic structure of epitaxially grown monolayer 1T'-WTe2 using angle-resolved photoemission (ARPES) and first principle calculations, we observe clear signatures of the topological band inversion and the band gap opening, which are the hallmarks of a QSH state. Scanning tunneling microscopy measurements further confirm the correct crystal structure and the existence of a bulk band gap, and provide evidence for a modified electronic structure near the edge that is consistent with the expectations for a QSH insulator. Our results establish monolayer 1T'-WTe2 as a new class of QSH insulator with large band gap in a robust two-dimensional materials family of transition metal dichalcogenides (TMDCs).

cond-mat.mtrl-sci↗

Ubiquitous strong electron phonon coupling at the interface of FeSe/SrTiO3

The high temperature superconductivity in single-unit-cell (1UC) FeSe on SrTiO3 (STO)(001) and the observation of replica bands by angle-resolved photoemission spectroscopy (ARPES) have led to the conjecture that the coupling between FeSe electron and the STO phonon is responsible for the enhancement of Tc over other FeSe-based superconductors1,2. However the recent observation of a similar superconducting gap in FeSe grown on the (110) surface of STO raises the question of whether a similar mechanism applies3,4. Here we report the ARPES study of the electronic structure of FeSe grown on STO(110). Similar to the results in FeSe/STO(001), clear replica bands are observed. We also present a comparative study of STO (001) and STO(110) bare surfaces, where photo doping generates metallic surface states. Similar replica bands separating from the main band by approximately the same energy are observed, indicating this coupling is a generic feature of the STO surfaces and interfaces. Our findings suggest that the large superconducting gaps observed in FeSe films grown on two different STO surface terminations are likely enhanced by a common coupling between FeSe electrons and STO phonons.

cond-mat.supr-con↗

Direct spectroscopic evidence for phase competition between the pseudogap and superconductivity in Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+δ}$

In the high-temperature ($T_{c}$) cuprate superconductors, increasing evidence suggests that the pseudogap, existing below the pseudogap temperature $T$*, has a distinct broken electronic symmetry from that of superconductivity. Particularly, recent scattering experiments on the underdoped cuprates have suggested that a charge ordering competes with superconductivity. However, no direct link of this physics and the important low-energy excitations has been identified. Here we report an antagonistic singularity at $T_{c}$ in the spectral weight of Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+δ}$ as a compelling evidence for phase competition, which persists up to a high hole concentration $p$ ~ 0.22. Comparison with a theoretical calculation confirms that the singularity is a signature of competition between the order parameters for the pseudogap and superconductivity. The observation of the spectroscopic singularity at finite temperatures over a wide doping range provides new insights into the nature of the competitive interplay between the two intertwined phases and the complex phase diagram near the pseudogap critical point.

cond-mat.supr-con↗

Direct Optical Coupling to an Unoccupied Dirac Surface State in the Topological Insulator Bi$_2$Se$_3$

We characterize the occupied and unoccupied electronic structure of the topological insulator Bi$_2$Se$_3$ by one-photon and two-photon angle-resolved photoemission spectroscopy and slab band structure calculations. We reveal a second, unoccupied Dirac surface state with similar electronic structure and physical origin to the well-known topological surface state. This state is energetically located 1.5 eV above the conduction band, which permits it to be directly excited by the output of a Ti:Sapphire laser. This discovery demonstrates the feasibility of direct ultrafast optical coupling to a topologically protected, spin-textured surface state.

cond-mat.mtrl-sci↗

Measurement of Coherent Polarons in the Strongly Coupled Antiferromagnetically Ordered Iron-Chalcogenide Fe1.02Te using Angle-Resolved Photoemission Spectroscopy

The nature of metallicity and the level of electronic correlations in the antiferromagnetically ordered parent compounds are two important open issues for the iron-based superconductivity. We perform a temperature-dependent angle-resolved photoemission spectroscopy study of Fe1.02Te, the parent compound for iron chalcogenide superconductors. Deep in the antiferromagnetic state, the spectra exhibit a "peak-dip-hump" line shape associated with two clearly separate branches of dispersion, characteristics of polarons seen in manganites and lightly-doped cuprates. As temperature increases towards the Neel temperature (T_N), we observe a decreasing renormalization of the peak dispersion and a counterintuitive sharpening of the hump linewidth, suggestive of an intimate connection between the weakening electron-phonon (e-ph) coupling and antiferromagnetism. Our finding points to the highly-correlated nature of Fe1.02Te ground state featured by strong interactions among the charge, spin and lattice and a good metallicity plausibly contributed by the coherent polaron motion.

cond-mat.str-el↗

Observation of Single Dirac Cone Topological Surface State in Compounds TlBiTe2 and TlBiSe2 from a New Topological Insulator Family

Angle resolved photoemission spectroscopy (ARPES) studies were performed on two compounds (TlBiTe$_2$ and TlBiSe$_2$) from a recently proposed three dimensional topological insulator family in Thallium-based III-V-VI$_2$ ternary chalcogenides. For both materials, we show that the electronic band structures are in broad agreement with the $ab$ $initio$ calculations; by surveying over the entire surface Brillouin zone (BZ), we demonstrate that there is a single Dirac cone reside at the center of BZ, indicating its topological non-triviality. For TlBiSe$_2$, the observed Dirac point resides at the top of the bulk valance band, making it a large gap ($\geq$200$meV$) topological insulator; while for TlBiTe$_2$, we found there exist a negative indirect gap between the bulk conduction band at $M$ point and the bulk valance band near $Γ$, making it a semi-metal at proper doping. Interestingly, the unique band structures of TlBiTe$_2$ we observed further suggest TlBiTe$_2$ may be a candidate for topological superconductors.

cond-mat.mtrl-sci↗