arXiv subjects

Robert J Young

Publications and source records attributed to Robert J Young.

2 recordsLinked to original sources

arXiv2026

Force-Isosurface Simulations Probe the Limits of High-Resolution AFM on Three-Dimensional Molecules

High-resolution atomic force microscopy has transformed molecular imaging by revealing intramolecular structure directly in real space. A major remaining challenge is to extend this capability from largely planar molecules to non-planar molecular systems, where the most important structural information may be distributed across different heights above the surface. Here we use probe-particle-model simulations to predict the constant-force contours expected above molecules with increasing structural complexity. By extracting force isosurfaces from simulated three-dimensional force fields, we compare the molecular information retained in constant-height and constant-force images. For tilted benzene and pyrrole, constant-force images preserve the molecular framework across a range of adsorption angles and allow the molecular orientation to be recovered quantitatively. For larger non-planar and three-dimensional systems, simulations identify characteristic force-isosurface contrast associated with adsorption geometry, lower-lying molecular structure and curved molecular surfaces. These results provide target contrasts for force isosurfaces that could be extracted from three-dimensional force-mapping experiments, evaluating the molecular information retained by ideal force-isosurface imaging across progressively non-planar systems.

cond-mat.mes-hall↗

arXiv2021

Towards GaAs Thin-Film Tracking Detectors

Silicon-based tracking detectors have been used in several important applications, such as in cancer therapy using particle beams, and for the discovery of new elementary particles at the Large Hadron Collider at CERN. III-V semiconductor materials are an attractive alternative to silicon for this application, as they have some superior physical properties. They could meet the demands for fast timing detectors allowing time-of-flight measurements with ps resolution while being radiation tolerant and cost-efficient. As a material with a larger density, higher atomic number Z and much higher electron mobility than silicon, GaAs exhibits faster signal collection and a larger signal per μm of sensor thickness. In this work, we report on the fabrication of n-in-n GaAs thin-film devices intended to serve next-generation high-energy particle tracking detectors. Molecular beam epitaxy (MBE) was used to grow high-quality GaAs films with doping levels sufficiently low to achieve full depletion for detectors with an active thickness of 10 μm. The signal collection speed of the detector structures was assessed using the transient current technique (TCT). To elucidate the structural properties of the detector, Kelvin probe force microscopy (KPFM) was used, which confirmed the formation of the junction in the detector and revealed residual doping in the intrinsic layer. Our results suggest that GaAs thin films are suitable candidates to achieve thin and radiation-tolerant tracking detectors.

physics.ins-det↗