arXiv subjects

Robert S. Weatherup

Publications and source records attributed to Robert S. Weatherup.

9 recordsLinked to original sources

arXiv2026

Thermodynamic effects of solid electrolyte interphase formation from solvation and ionic association in water-in-salt electrolytes

Water-in-Salt-Electrolytes (WiSEs) are a promising class of next-generation electrolytes. Unlike classical dilute electrolytes or more conventional battery electrolytes, WiSEs are characterised by their super-concentrated salt concentration with only a small amount of water, which gives rise to their expanded electrochemical stability window (ESW). The expansion of the ESW is, in part, due to the formation of an inorganic solid electrolyte interphase (SEI) that passivates the anode; this principle is also important in graphite and Li-metal anodes, and beyond Li-ion technologies. The solvation and ionic associations are key descriptors in understanding the expansion of the ESW. Specifically, as reactions which lead to the SEI (or cathode electrolyte interphase, CEI) must occur at the electrode-electrolyte interface, the distribution of reactants and their various solvation environments are critical. This distribution near the interface is referred to as the electrical double layer (EDL), in the absence of reactions. Here we further develop and analyse a recently proposed thermodynamic theory of hydration and ionic associations in the EDL of WiSEs. We parameterize this theory from bulk molecular dynamics simulations and benchmark it against EDL simulations, finding good qualitative agreement. Using this thermodynamic theory, we rationalise changes in the ESW through: changes in the activity in the bulk electrolyte through the Nernst equation, which directly changes the stability of the electrolytes; and thermodynamic changes to the kinetics of these reactions, from the Butler-Volmer equation and coupled ion electron transfer kinetics, through the concentration of reactant species in the Helmholtz layer.

cond-mat.soft↗

arXiv2026

Band-Like Transport and Cation Off-Centring in Ag/Bi-Based Solar Absorbers

Ag(I)-Bi(III)-based semiconductors have gained substantial attention as nontoxic, stable alternatives to lead-halide perovskites for optoelectronics, but are widely limited by carrier localization, which severely restricts diffusion lengths. The most efficient Ag/Bi solar absorber is AgBiS2, but diffusion lengths in nanocrystal films are <50 nm. Carrier localization in this rock-salt (Fm-3m) system is believed to arise from cation disorder, and so we herein investigate the layered cation-ordered analogue. Through beyond-DFT simulations combined with neutron and X-ray powder diffraction, we reveal that off-centring of Ag+ and Bi3+ cations is energetically-favoured in this cation-ordered phase. Despite local distortions in the AgS6 and BiS6 octahedra, band-like transport takes place, which, surprisingly, also occurs in the cation-disordered rock-salt phase when these materials are made as bulk powders. The cubic-phase powders have the same degree of cation disorder as the nanocrystals that have carrier localization, which suggests that extrinsic factors play a determining role. We ascribe the intrinsic band-like transport of both phases of AgBiS2 to its close packing, ensuring high electronic dimensionality. These insights offer pathways for designing solar absorbers avoiding carrier localization limitations, and call for future efforts to enhance the efficiency of AgBiS2 photovoltaics to focus on large-grained thin films, or improved nanocrystal surface passivation.

cond-mat.mtrl-sci↗

arXiv2024

Temperature-Dependent Dynamic Disproportionation in LiNiO$_2$

Nickelate materials offer diverse functionalities for energy and computing applications. Lithium nickel oxide (LiNiO$_2$) is an archetypal layered nickelate, but the electronic structure of this correlated material is not yet fully understood. Here we investigate the temperature-dependent speciation and spin dynamics of Ni ions in LiNiO$_2$. Our ab initio simulations predict that Ni ions disproportionate into three states, which dynamically interconvert and whose populations vary with temperature. These predictions are verified using x-ray absorption spectroscopy, x-ray magnetic circular dichroism, and resonant inelastic x-ray scattering at the Ni L$_{3,2}$-edge. Charge-transfer multiplet calculations consistent with disproportionation reproduce all experimental features. Together, our experimental and computational results support a model of dynamic disproportionation that explains diverse physical observations of LiNiO$_2$, including magnetometry, thermally activated electronic conduction, diffractometry, core-level spectroscopies, and the stability of ubiquitous antisite defects. This unified understanding of the fundamental material properties of LiNiO$_2$ is important for applications of nickelate materials as battery cathodes, catalysts, and superconductors.

cond-mat.mtrl-sci↗

arXiv2020

Oxidising and carburising catalyst conditioning for the controlled growth and transfer of large crystal monolayer hexagonal boron nitride

Hexagonal boron nitride (h-BN) is well-established as a requisite support, encapsulant and barrier for 2D material technologies, but also recently as an active material for applications ranging from hyperbolic metasurfaces to room temperature single-photon sources. Cost-effective, scalable and high quality growth techniques for h-BN layers are critically required. We utilise widely-available iron foils for the catalytic chemical vapour deposition (CVD) of h BN and report on the significant role of bulk dissolved species in h-BN CVD, and specifically, the balance between dissolved oxygen and carbon. A simple pre-growth conditioning step of the iron foils enables us to tailor an error-tolerant scalable CVD process to give exceptionally large h-BN monolayer domains. We also develop a facile method for the improved transfer of as-grown h-BN away from the iron surface by means of the controlled humidity oxidation and subsequent rapid etching of a thin interfacial iron oxide; thus, avoiding the impurities from the bulk of the foil. We demonstrate wafer-scale (2 inch) production and utilise this h-BN as a protective layer for graphene towards integrated (opto) electronic device fabrication.

cond-mat.mtrl-sci↗

arXiv2018

Compressive Behavior and Failure Mechanisms of Freestanding and Composite 3D Graphitic Foams

Open-cell graphitic foams were fabricated by chemical vapor deposition using nickel templates and their compressive responses were measured over a range of relative densities. The mechanical response required an interpretation in terms of a hierarchical micromechanical model, spanning 3 distinct length scales. The power law scaling of elastic modulus and yield strength versus relative density suggests that the cell walls of the graphitic foam deform by bending. The length scale of the unit cell of the foam is set by the length of the struts comprising the cell wall, and is termed level I. The cell walls comprise hollow triangular tubes, and bending of these strut-like tubes involves axial stretching of the tube walls. This length scale is termed level II. In turn, the tube walls form a wavy stack of graphitic layers, and this waviness induces interlayer shear of the graphitic layers when the tube walls are subjected to axial stretch. The thickness of the tube wall defines the third length scale, termed level III. We show that the addition of a thin, flexible ceramic Al2O3 scaffold stiffens and strengthens the foam, yet preserves the power law scaling. The hierarchical model gives fresh insight into the mechanical properties of foams with cell walls made from emergent 2D layered solids.

cond-mat.mtrl-sci↗

arXiv2018

A peeling approach for integrated manufacturing of large mono-layer h-BN crystals

Hexagonal boron nitride (h-BN) is the only known material aside from graphite with a structure composed of simple, stable, non-corrugated atomically thin layers. While historically used as lubricant in powder form, h-BN layers have become particularly attractive as an ultimately thin insulator. Practically all emerging electronic and photonic device concepts rely on h-BN exfoliated from small bulk crystallites, which limits device dimensions and process scalability. Here, we address this integration challenge for mono-layer h-BN via a chemical vapour deposition process that enables crystal sizes exceeding 0.5 mm starting from commercial, reusable platinum foils, and in unison allows a delamination process for easy and clean layer transfer. We demonstrate sequential pick-up for the assembly of graphene/h-BN heterostructures with atomic layer precision, while minimizing interfacial contamination. Our process development builds on a systematic understanding of the underlying mechanisms. The approach can be readily combined with other layered materials and opens a scalable route to h-BN layer integration and reliable 2D material device layer stacks.

cond-mat.mtrl-sci↗

arXiv2015

Measuring the Proton Selectivity of Graphene Membranes

By systematically studying the proton selectivity of free-standing graphene membranes in aqueous solutions we demonstrate that protons are transported by passing through defects. We study the current-voltage characteristics of single-layer graphene grown by chemical vapour deposition (CVD) when a concentration gradient of HCl exists across it. Our measurements can unambiguously determine that H+ ions are responsible for the selective part of the ionic current. By comparing the observed reversal potentials with positive and negative controls we demonstrate that the as-grown graphene is only weakly selective for protons. We use atomic layer deposition to block most of the defects in our CVD graphene. Our results show that a reduction in defect size decreases the ionic current but increases proton selectivity.

cond-mat.mes-hall↗

arXiv2014

Graphene-Passivated Nickel as an Oxidation-Resistant Electrode for Spintronics

We report on graphene-passivated ferromagnetic electrodes (GPFE) for spin devices. GPFE are shown to act as spin-polarized oxidation-resistant electrodes. The direct coating of nickel with few layer graphene through a readily scalable chemical vapour deposition (CVD) process allows the preservation of an unoxidized nickel surface upon air exposure. Fabrication and measurement of complete reference tunneling spin valve structures demonstrates that the GPFE is maintained as a spin polarizer and also that the presence of the graphene coating leads to a specific sign reversal of the magneto-resistance. Hence, this work highlights a novel oxidation-resistant spin source which further unlocks low cost wet chemistry processes for spintronics devices.

cond-mat.mtrl-sci↗

arXiv2014

Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition

We report on a large improvement in the wetting of Al2O3 thin films grown by un-seeded atomic layer deposition on monolayer graphene, without creating point defects. This enhanced wetting is achieved by greatly increasing the nucleation density through the use of polar traps induced on the graphene surface by an underlying metallic substrate. The resulting Al2O3/graphene stack is then transferred to SiO2 by standard methods.

cond-mat.mtrl-sci↗