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Robert W. Carpick

Publications and source records attributed to Robert W. Carpick.

3 recordsLinked to original sources

Mechanochemical Nano-Writing of an Atomically Thin Metal

Mechanical energy accelerates many physicochemical processes, including materials syntheses that are hard to produce with thermal energy alone. However, physical understanding connecting applied mechanical forces with internal stresses and ensuing reaction mechanisms is lacking. Here we demonstrate mechanical force-enabled synthesis and nanoscale patterning to metallize a two-dimensional (2D) material, producing an atomically-thin superconducting material. Localized force applied by atomic force microscope tips to van der Waals (vdW) encapsulated stacks of 2D bilayer MoTe2 and adjacent source Pd guides 2D Pd7MoTe2 growth with 50 nm lateral resolution. Force accelerates reaction kinetics exponentially per Eyring's stress-assisted thermal activation model, reducing synthesis temperatures from ~200 °C to near-room temperature. Finite element simulations, density functional theory, and ab-initio grand canonical Monte Carlo calculations show that tip-induced compression facilitates Pd chemisorption to tensile-strained MoTe2 that converts to uniform Pd7MoTe2. This demonstrates a new, generalizable paradigm for nanoscale synthesis of quantum materials, and high-precision engineering of superconductivity.

cond-mat.mes-hall

Fermi level pinning by defects can explain the large reported carbon 1s binding energy variations in diamond

The quantitative evaluation of the carbon hybridization state by X-ray photoelectron spectroscopy (XPS) has been a surface-analysis problem for the last three decades due to the challenges associated with the unambiguous identification of the characteristic binding energy values for sp$^2$ and sp$^3$-bonded carbon. While the sp$^2$ binding energy is well established, there is disagreement for the sp$^3$ value in the literature. Here, we compute the binding energy values for model structures of pure and doped-diamond using density functional theory. The simulation results indicate that the large band-gap of diamond allows defects to pin the Fermi level, which results in large variations of the C(1s) core electron energies for sp$^3$-bonded carbon, in agreement with the broad range of experimental C(1s) binding energy values for sp$^3$ carbon reported in the literature. Fermi level pinning by boron is demonstrated by experimental C(1s) binding energies of highly B-doped ultrananocrystalline diamond that are in good agreement to simulations.

cond-mat.mtrl-sci

Thermally-Induced Structural Evolution of Silicon- and Oxygen-Containing Hydrogenated Amorphous Carbon

The thermally-induced structural evolution of silicon- and oxygen-containing hydrogenated amorphous carbon (a-C:H:Si:O) was investigated by X-ray photoelectron and absorption spectroscopy, as well as molecular dynamics (MD) simulations. The spectroscopic results indicate that the introduction of Si and O in hydrogenated amorphous carbon (a-C:H) increases the activation energy for the conversion of sp3- to sp2-bonded C. MD simulations indicate that the higher thermal stability of a-C:H:Si:O compared to a-C:H derives from the lower fraction of strained C-C sp3 bonds in a-C:H:Si:O.

cond-mat.mtrl-sci