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Roberto Hiroki Miwa

Publications and source records attributed to Roberto Hiroki Miwa.

2 recordsLinked to original sources

Tunable Electronic and Transport Properties of Biphenylene via Fluorination and Disorder

Biphenylene (BPN) network is a newly synthesized 2D carbon allotrope hosting anisotropic Dirac electronic states. Here, we investigate how fluorination and correlated chemical disorder modify the electronic structure and charge transport of fluorinated biphenylene (F/BPN) using density functional theory, Wannier-based tight-biding Hamiltonian, and quantum transport simulations. We show that fluorination reshapes the transport response of BPN, producing concentration-dependent anisotropic conduction regimes. For pristine and ordered fluorinated systems, we identified the emergence of negative differential resistance (NDR) and a bias-induced inversion of the preferred transport direction, from armchair to zigzag and vice versa. In contrast, disorder suppresses the NDR, driving the system toward an approximately Ohmic transport regime. At high fluorine coverage, we further observed a nonmonotonic dependence of the armchair current on adatom concentration, which we attribute to the formation of correlated quasi-linear fluor conformation that promote armchair-oriented C-$π$ transport channels while simultaneously suppressing transport along the zigzag direction. Our results demonstrate that correlated fluorination can be used as an active mechanism to engineer electronic transport.

cond-mat.mtrl-sci↗

Unveiling the electronic properties of BiP$_3$ triphosphide from bulk to graphene-based heterostructure by first-principles calculations

Triphosphides, with a chemical formula of XP$_3$ (X is a group IIIA, IVA, or VA element), have recently attracted much attention due to their great potential in several applications. Here, using density functional theory calculations, we describe for the first time the structural and electronic properties of the bulk bismuth triphosphide (BiP$_3$). Phonon spectra and molecular dynamics simulations confirm that the 3D crystal of BiP$_3$ is a metal thermodynamically stable with no bandgap. Unlike the bulk, the mono-, bi-, tri-, and tetra-layers of BiP$_3$ are semiconductors with a bandgap ranging from 1.4 to 0.06 eV. However, stackings with more than five layers exhibit metallic behavior equal to the bulk. The results show that quantum confinement is a powerful tool for tuning the electronic properties of BiP$_3$ triphosphide, making it suitable for technological applications. Building on this, the electronic properties of van der Waals heterostructure constructed by graphene (G) and the BiP$_3$ monolayer (m-BiP$_3$) were investigated. Our results show that the Dirac cone in graphene remains intact in this heterostructure. At the equilibrium interlayer distance, the G/m-BiP$_3$ forms an n-type contact with a Schottky barrier height of 0.5 eV. It is worth noting that the SHB in the G/m-BiP$_3$ heterostructure can be adjusted by changing the interlayer distance or applying a transverse electric field. Thus, we show that few-layers BiP$_3$ is an interesting material for realizing nanoelectronic and optoelectronic devices and is an excellent option for designing Schottky nanoelectronic devices.

cond-mat.mtrl-sci↗