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Robin Buschbeck

Publications and source records attributed to Robin Buschbeck.

7 recordsLinked to original sources

Uniaxial strain-driven ferroelastic domain control in LaAlO3

Multiferroic domain walls in functional oxides exhibit properties distinct from the bulk and are increasingly exploited as active elements in nanoelectronic and photonic devices. Deterministic control of domain populations has typically remained limited to local control, or removal with temperature. Here we demonstrate continuous, reversible manipulation of the ferroelastic domain structure in single-crystal LaAlO$_3$ using in-situ uniaxial strain. Combining atomic force microscopy, X-ray diffraction, and Raman spectroscopy with first-principles calculations we map the complete microscopic evolution of the twin domain population through the strain-driven transition from the rhombohedral $R\bar{3}c$ ground state toward the predicted orthorhombic $Fmmm$ phase. Applied strains below $0.5\%$ produce pronounced surface flattening and large-scale domain reorganisation, establishing uniaxial strain as a technically accessible control parameter for ferroelastic domain engineering. These results open a route to active, real-time programming of domain architectures in LaAlO$_3$-based heterostructures, with implications for strain-tunable superconducting interfaces, nanoscale phonon-polariton optics, and ultrafast lattice control.

cond-mat.mtrl-sci

Ultra-high THz-field-confinement at LaAlO3 twin walls

The control and steering of light at nanometre length scales is crucial for the development of both fundamental science and nanophotonic technologies. Recent advancements have been achieved by exploiting various crystalline anisotropies, allowing for subdiffractional and diffraction-less canalisation of energy. These studies in particular benefit from stacking and twisting of 2D materials, whereas corresponding capabilities of anisotropic bulk crystals are rather unexplored. In this work, we show that ferroelastic twin walls - crystallographically perfect 2D-sheets that separate regions of differently oriented domains - in the distorted perovskite LaAlO3 provide a natural platform for broadband lateral confinement and superb canalisation of light at the nanoscale. Without fabrication processes, the electromagnetic fields localised at such walls exhibit lateral optical sizes up to 260 times smaller than the free-space wavelength. Depending on the adjacent domain orientation and frequency, the twin wall pattern preferentially concentrates or repels the electromagnetic energy, constituting a natural building block towards broadband MIR and THz nanophotonics for polaritonic circuitry.

physics.optics

Uncovering the properties of homo-epitaxial GaN devices through cross-sectional infrared nanoscopy

Validating material performance in electrical devices is crucial to product development. For Gallium Nitride (GaN) devices, evaluating material factors such as defects, dopant concentration, and overall production quality is essential to ensure their performance in advanced electronic and optoelectronic applications. This work demonstrates that scattering-type scanning near-field optical microscopy (s-SNOM) can meet the demanding performance requirements for characterizing homoepitaxial GaN devices. Specifically, we show that combining s-SNOM results in the mid-IR and terahertz (THz) spectral ranges can disentangle carrier and lattice changes in a GaN p-i-n diode, which is not possible using one spectral range alone. We observe strong, resonant near-field signals near the LO phonon mode of GaN that correlate well with point-dipole models. This data shows great sensitivity to the local carrier density, with changes on the order of 1018 cm-3 easily resolved experimentally. Further, we demonstrate high sensitivity to sub-surface defects, which remain a significant challenge for other non-destructive techniques. To validate the power of s-SNOM imaging, our results are compared to traditional metrologies, including micro-Raman mapping and Kelvin Probe Force Microscopy (KPFM). Our results show that s-SNOM shows superior resolution and sensitivity to perturbations, highlighting the power of this technique in semiconductor device characterization.

cond-mat.mtrl-sci

Phonon dephasing times determined with time-delayed, broadband CARS

Coherent Raman scattering techniques as coherent anti-Stokes Raman scattering (CARS), offer significant advantages in terms of pixel dwell times and speed as compared to spontaneous Raman scattering for investigations of crystalline materials. However, the spectral information in CARS is often hampered by the presence of a non-resonant contribution to the scattering process that shifts and distorts the Raman peaks. In this work, we apply a method to obtain non-resonant background-free spectra based on time-delayed, broadband CARS (TD-BCARS) using an intra-pulse excitation scheme. In particular, this method can measure the phononic dephasing times across the full phonon spectrum at once. We test the methodology on amorphous SiO2 (glass), which is used to characterize the setup-specific and material-independent response times, and then apply TD-BCARS to the analysis of single crystals of diamond and ferroelectrics of potassium titanyl phosphate (KTP) and potassium titanyl arsenate (KTA). For diamond, we determine a dephasing time of t = 7.81 ps for the single sp3 peak.

cond-mat.mtrl-sci

Perovskite Phase Heterojunction Solar Cells

Modern photovoltaic devices are often based on a heterojunction structure where two components with different optoelectronic properties are interfaced. The properties of each side of the junction can be tuned by either utilizing different materials (e.g. donor/acceptor) or doping (e.g. PN Si junction) or even varying their dimensionality (e.g. 3D/2D). In this work we demonstrate the concept of phase heterojunction (PHJ) solar cells by utilizing two polymorphs of the same material. We demonstrate the approach by forming $\gamma$-CsPbI3/$\beta$-CsPbI3 perovskite PHJ solar cells. We find that all of the photovoltaic parameters of the PHJ device significantly surpass those of each of the single-phase devices, resulting in a maximum power conversion efficiency of 20.1%. These improvements originate from the efficient passivation of the $\beta$-CsPbI3 by the larger bandgap $\gamma$-CsPbI3, the increase in the built-in potential of the PHJ devices enabled by the energetic alignment between the two phases and the enhanced absorption of light by the PHJ structure. The approach demonstrated here offers new possibilities for the development of photovoltaic devices based on polymorphic materials.

cond-mat.mtrl-sci

Lattice dynamics of LiNb$_{\text{1-x}}$Ta$_{\text{x}}$O$_{\text{3}}$ solid solutions: Theory and experiment

Lithium niobate (LNO) and lithium tantalate (LTO) see widespread use in fundamental research and commercial technologies reaching from electronics over classical optics to integrated quantum communication. In recent years, the mixed crystal system lithium niobate tantalate (LNT) allows for the dedicate engineering of material properties by combining the advantages of the two parental materials LNO and LTO. Vibrational spectroscopies such as Raman spectroscopy or (Fourier transform) infrared spectroscopy are vital techniques to provide detailed insight into the material properties, which is central to the analysis and optimization of devices. In this work, we present a joint experimental-theoretical approach allowing to unambiguously assign the spectral features in the LNT material family through both Raman and IR spectroscopy, as well as to provide an in-depth explanation for the observed scattering efficiencies based on first-principles calculations. The phononic contribution to the static dielectric tensor is calculated from the experimental and theoretical data using the generalized Lyddane-Sachs-Teller relation and compared with the results of the first-principles calculations. The joint methodology can be readily expanded to other materials and serves, e.g., as the basis for studying the role of point defects or doping.

cond-mat.mtrl-sci

Comparing Transmission- and Epi-BCARS: A Transnational Round Robin on Solid State Materials

Broadband coherent anti-Stokes Raman scattering (BCARS) is an advanced Raman spectroscopy method that combines the spectral sensitivity of spontaneous Raman scattering (SR) with the increased signal intensity of single-frequency coherent Raman techniques. These two features make BCARS particularly suitable for ultra-fast imaging of heterogeneous samples, as already shown in biomedicine. Recent studies demonstrated that BCARS also shows exceptional spectroscopic capabilities when inspecting crystalline materials like lithium niobate and lithium tantalate, and can be used for fast imaging of ferroelectric domain walls. These results strongly suggest the extension of BCARS towards new imaging applications like mapping defects, strain, or dopant levels, similar to standard SR imaging. Despite these advantages, BCARS suffers from a spurious and chemically unspecific non-resonant background (NRB) that distorts and shifts the Raman peaks. Post-processing numerical algorithms are then used to remove the NRB and to obtain spectra comparable to SR results. Here, we show the reproducibility of BCARS by conducting an internal Round Robin with two different BCARS experimental setups, comparing the results on different crystalline materials of increasing structural complexity: diamond, 6H-SiC, KDP, and KTP. First, we compare the detected and phase-retrieved signals, the setup-specific NRB-removal steps, and the mode assignment. Subsequently, we demonstrate the versatility of BCARS by showcasing how the selection of pump wavelength, pulse width, and detection geometry can be tailored to suit the specific objectives of the experiment. Finally, we compare and optimize measurement parameters for the high-speed, hyperspectral imaging of ferroelectric domain walls in lithium niobate.

cond-mat.mtrl-sci