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Robin Lefèvre

Publications and source records attributed to Robin Lefèvre.

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Discovery of Superconductivity in Nb$_4$SiSb$_2$ with a V$_4$SiSb$_2$-Type Structure and Implications of Interstitial Doping on its Physical Properties

We report on the discovery, structural analysis, and the physical properties of Nb$_4$SiSb$_2$ -- a hitherto unknown compound crystallizing in the V$_4$SiSb$_2$-type structure with the tetragonal space group $I4/mcm$ and unit cell parameters $a$ = 10.3638(2) $\mathring{\mathrm{A}}$ and $c$ = 4.9151(2) $\mathring{\mathrm{A}}$. We find Nb$_4$SiSb$_2$ to be a metal undergoing a transition to a superconducting state at a critical temperature of $T_{\rm c} \approx$ 1.6 K. The bulk nature of the superconductivity in this material is confirmed by the observation of a well defined discontinuity in specific heat with a normalized specific heat jump of $ΔC(T_{\rm c})/γT_{\rm c} = 1.33\, {\rm mJ}\, {\rm mol}^{-1}\, {\rm K}^{-2}$. We find that for Nb$_4$SiSb$_2$, the unoccupied sites on the $4b$ Wyckoff position can be partially occupied with Cu, Pd, or Pt. Low-temperature resistivity measurements show transitions to superconductivity for all three compounds at $T_{\rm c} \approx\, 1.2\, {\rm K}$ for Nb$_4$Cu$_{0.2}$SiSb$_2$, and $T_{\rm c} \approx\, 0.8\, {\rm K}$ for Nb$_4$Pd$_{0.2}$SiSb$_2$ as well as for Nb$_4$Pt$_{0.14}$SiSb$_2$. The addition of electron-donor atoms into these void positions, henceforth, lowers the superconducting transition temperature in comparison to the parent compound.

cond-mat.supr-con

A Heavy-Fermion Zn-deficient CaBe2Ge2-Type Phase with Rare Ce-based Ferromagnetism and Large Magnetoresistance

We report on the hitherto unknown compound CeZn2-dGe2 (d approx 0.41). We find this compound to crystallize in a defect version of the well-known CaBe2Ge2 structure type. The phase forms in a Zn/In flux and with Zn-deficiency on one of its crystallographic sites. We find the compound to display uncommon localized Ce-based (4f1) ferromagnetism with a Tc = 6.6 K, a large positive magnetoresistance reaching an MR of approximately 32 % below $T$ = 10 K, and strongly correlated electrons, as evidenced by a Kadowaki-Woods ratio A/gamma^2 close to known heavy fermion compounds. The here discovered material is therefore a promising model platform for the investigation of these entangled interacting and potentially competing electronic states paired with complex crystal chemistry.

cond-mat.str-el

Group-9 Transition Metal Suboxides Adopting the Filled-Ti$_2$Ni Structure: A Class of Superconductors Exhibiting Exceptionally High Upper Critical Fields

The Ti$_2$Ni and the related $η$-carbide structure are known to exhibit various intriguing physical properties. The Ti$_2$Ni structure with the cubic space group $Fd\bar{3}m$ is surprisingly complex, consisting of a unit cell with 96 metal atoms. The related $η$-carbide compounds correspond to a filled version of the Ti$_2$Ni structure. Here, we report on the structure and superconductivity in the $η$-carbide type suboxides Ti$_4$M$_2$O with M = Co, Rh, Ir. We have successfully synthesized all three compounds in single phase form. We find all three compounds to be type-II bulk superconductors with transition temperatures of $T_{\rm c}$ = 2.7, 2.8, and 5.4 K, and with normalized specific heat jumps of $ΔC/γT_{\rm c}$ = 1.65, 1.28, and 1.80 for Ti$_4$Co$_2$O, Ti$_4$Rh$_2$O, and Ti$_4$Ir$_2$O, respectively. We find that all three superconductors, exhibit high upper-critical fields. Particularly noteworthy is Ti$_4$Ir$_2$O with an upper critical field of $μ_0 H_{\rm c2}{\rm (0)}$ =~16.06~T, which exceeds by far the weak-coupling Pauli limit of 9.86~T. The role of the void filling light atom X has so far been uncertain for the overall physical properties of these materials. Herein, we have successfully grown single crystals of Ti$_2$Co. In contrast to the metallic $η$-carbide type suboxides Ti$_4$M$_2$O, we find that Ti$_2$Co displays a semimetallic behavior. Hence, the octahedral void-filling oxygen plays a crucial role for the overall physical properties, even though its effect on the crystal structure is small. Our results indicate that the design of new superconductors by incorporation of electron-acceptor atoms may in the Ti$_2$Ni-type structures and other materials with crystallographic void position be a promising future approach. The remarkably high upper critical fields, in this family of compounds, may furthermore spark significant future interest.

cond-mat.supr-con

Synthetic control over polymorph formation in the d-band semiconductor system FeS$_2$

Pyrite, also known as fool's gold is the thermodynamic stable polymorph of FeS$_2$. It is widely considered as a promising d-band semiconductor for various applications due to its intriguing physical properties. Marcasite is the other naturally occurring polymorph of FeS$_2$. Measurements on natural crystals have shown that it has similarly promising electronic, mechanical, and optical properties as pyrite. However, it has been only scarcely investigated so far, because the laboratory-based synthesis of phase-pure samples or high-quality marcasite single crystal has been a challenge until now. Here, we report the targeted phase formation via hydrothermal synthesis of marcasite and pyrite. The formation condition and phase purity of the FeS$_2$ polymorphs are systematically studied in the form of a comprehensive synthesis map. We, furthermore, report on a detailed analysis of marcasite single crystal growth by a space-separated hydrothermal synthesis. We observe that single phase product of marcasite forms only on the surface under the involvement of H$_2$S and sulphur vapor. The availability of high-quality crystals of marcasite allows us to measure the fundamental physical properties, including an allowed direct optical bandgap of 0.76 eV, temperature independent diamagnetism, an electronic transport gap of 0.11 eV, and a room-temperature carrier concentration of 4.14 $\times$ 10$^{18}$ cm$^{-3}$. X-ray absorption/emission spectroscopy are employed to measure the band gap of the two FeS$_2$ phases. We find marcasite has a band gap of 0.73 eV, while pyrite has a band gap of 0.87 eV. Our results indicate that marcasite -- that is now synthetically available in a straightforward fashion -- is as equally promising as pyrite as candidate for various semiconductor applications based on earth abundant elements.

cond-mat.mtrl-sci