arXiv subjects

Rodrigo Becerra Silva

Publications and source records attributed to Rodrigo Becerra Silva.

3 recordsLinked to original sources

arXiv2026

Field-Induced Dissociation Reveals Excitonic Long-Range Photocarrier Transport in Bulk-Insulating Bi2Se3 Nanoribbons

Photoexcited charge carriers in topological insulators display anomalously long-range transport at cryogenic temperatures, but the underlying mechanism remains under debate. Here we use a transverse electric field as a discriminating probe of photocarrier dynamics in bulk-insulating Sb-doped Bi2Se3 nanoribbons, combining scanning photocurrent microscopy (SPCM) with ultrafast transient photovoltage (TPV) measurements. SPCM shows that suppression of the photocurrent requires a transverse electric field nearly 50 times larger than that needed to deflect free carriers, yet comparable to the expected exciton dissociation field. TPV measurements at 12 K and low excitation fluence reveal that the photocarrier diffusivity exceeds the value implied by the Einstein relation and the measured drift mobility by more than an order of magnitude, a bound that holds even at the lower end of the fitting uncertainty. Together, these observations indicate that the long-range photoresponse is not carried by free charge carriers but by a charge-neutral correlated state.

cond-mat.mes-hall↗

arXiv2025

Super-diffusion of Photoexcited Carriers in Topological Insulator Nanoribbons

Understanding the ultrafast dynamics and transport of photoexcited carriers in topological insulators is crucial for the optical manipulation of spins and may shed light on the nature of topological excitons. Here we investigate bulk-insulating Sb-doped $\mathrm{Bi_2Se_3}$ nanoribbons via ultrafast transient photovoltage microscopy. The probe-pulse-induced photovoltage is substantially suppressed by a pump pulse. Recovery time increases from 50 to 1600 picoseconds as the pump fluence increases. We found that the diffusivity of photoexcited carriers increases significantly at lower carrier concentrations, up to 800 cm$^2$/s at 21 K, two to three orders of magnitude higher than that of band-edge carriers. Remarkably, the photoexcited carriers travel up to 10 $μ$m for hundreds of picoseconds at this high diffusivity. The diffusivity peaks in intrinsic devices and is reduced at high temperatures. We discuss the possible mechanisms of long-ranged super-diffusion in the frames of hot carriers and exciton condensation.

cond-mat.mes-hall↗

arXiv2024

Electrically Switchable Circular Photogalvanic Effect in Methylammonium Lead Iodide Microcrystals

We investigate the circular photogalvanic effect (CPGE) in single-crystalline methylammonium lead iodide microcrystals under a static electric field. The external electric field can enhance the magnitude of the helicity dependent photocurrent (HDPC) by two orders of magnitude and flip its sign, which we attribute to magnetic shift currents induced by the Rashba-Edelstein effect. This HDPC induced by the static electric field may be viewed as an unusually strong third-order photoresponse, which produces a current two orders of magnitude larger than second-order injection current. Furthermore, the HDPC is highly nonlocal and can be created by photoexcitation out of the device channel, indicating a spin diffusion length up to 50 $μ$m at 78 K.

cond-mat.mes-hall↗