arXiv subjects

Roger K. Lake

Publications and source records attributed to Roger K. Lake.

At least 19 recordsLinked to original sources

arXiv2026

Radio-Frequency-Driven Reshaping of the Mesoscale Charge-Density-Wave Landscape in 1T-TaS2 Thin-Film Devices

Radio-frequency excitation directly reshapes the mesoscale charge-density-wave landscape in quasi-two-dimensional 1T-TaS2 thin films. Under combined RF and DC bias, the hysteretic current-voltage characteristics associated with the nearly commensurate-incommensurate transition are strongly altered, displaying RF-driven collapse, branching, and multiple step-like features that depend on frequency and drive amplitude. In-situ Raman measurements show enhanced intensity and linewidth narrowing of low-frequency CDW phonon modes, consistent with reduced dephasing and increased coherence of the periodic lattice distortion under RF drive. This behavior is captured by combining an overdamped time-dependent Ginzburg-Landau description of the commensurate CDW with a morphology-informed percolative resistor-capacitor transport model. The simulations indicate that oscillatory driving anneals frustrated domain configurations, reduces domain-wall density, and reorganizes the discommensuration network, while the transport model reproduces the resulting hysteresis, avalanche-like pathways, and RF-induced conductance steps. RF driving therefore provides an effective route for controlling collective electron-phonon order and accessing metastable transport states in 1T-TaS2, with implications for reconfigurable RF electronics, memory, and unconventional computing based on correlated materials.

cond-mat.mtrl-sci↗

arXiv2026

Phonon Signatures of Near-Room-Temperature Phase Transition in Quasi-One-Dimensional Bi4I4 Topological van der Waals Material

The quasi-one-dimensional material Bi4I4 hosts two crystallographically similar polymorphs that realize distinct topological insulating phases separated by a first-order structural transition near room temperature. This transition occurs without a change in space group, arising instead from a subtle rearrangement of chain stacking registry. Polarization-resolved Raman spectroscopy directly resolves this structural-topological phase transition through abrupt, hysteretic modifications of the phonon spectrum. Angle-dependent measurements establish the symmetry of the dominant Raman-active modes and require a complex Raman tensor formalism to account for absorption-induced phase effects. Across the transition, selected phonon modes exhibit discontinuous, reversible shifts in frequency, linewidth, and relative intensity despite the absence of a space-group change. Density functional theory calculations reproduce the direction of the observed phonon renormalizations and confirm their sensitivity to stacking-dependent force constants. These results demonstrate that polarization-resolved Raman spectroscopy can detect subtle stacking-driven structural rearrangements that underlie topological band character, even when global crystallographic symmetry remains unchanged. The obtained results provide valuable insights into the interplay among lattice dynamics, structural distortions, and topological properties in this class of low-dimensional materials, with strong potential for unique functionalities.

cond-mat.mtrl-sci↗

arXiv2026

AC Response Across the Metal Insulator Transition of YBCO Josephson Junctions Fabricated with a Helium Ion Beam

Using focused helium ion beam (FHIB) irradiation, we fabricated in-plane, high-Tc YBCO Josephson junctions. By varying the dose of the irradiation, we tune the junction barriers from metallic (SNS) to insulating (SIS) and investigate how this transition affects microwave-driven dynamics. As the barrier transitions from metallic to insulating, the oscillatory response of the Shapiro steps to the RF power changes dramatically. On either side of the metal-insulator transition, the devices exhibit clean integer Shapiro steps without half-integer features, demonstrating that the current--phase relation is dominated by the first harmonic and that the excess current is minimal. The current-voltage response is well-described by the resistively, capacitively shunted junction model assuming a single-harmonic current--phase relation. This behavior indicates well-controlled junction properties suitable for a wide range of superconducting electronics, including detectors, mixers, and high-density integrated circuits.

cond-mat.supr-con↗

arXiv2026

A Quieter State of Charge -- Ultra-Low-Noise Collective Current in Charge-Density-Wave Nanowires

Electronic flicker noise limits phase stability in communication systems, reduces the sensitivity and selectivity of sensors, and degrades coherence in quantum devices. There is a strong need for unconventional materials and strategies for achieving ultra-low-noise performance in nanoscale and quantum electronics. Here, we demonstrate that in nanowires of the quasi-one-dimensional, fully gapped charge-density-wave material (TaSe4)2I, low-frequency electronic noise is suppressed below the limit of thermalized charge carriers in passive resistors. When the current is dominated by the sliding Frohlich condensate, the normalized noise spectral density decreases linearly with current, I -- a striking departure from the constant value observed in conventional conductors. No residual minimum noise level is reached for the current of the electron-lattice condensate in (TaSe4)2I nanowires. Repeating the measurements for another charge-density wave conductor, NbS3-II, we found a similar reduction below the normal electron limit at room temperature. Our findings signal intrinsically lower current fluctuations within a correlated electron transport regime.

cond-mat.str-el↗

arXiv2025

Quantum Spin Singlet and Classical Néel-Ordered Ground States in MoX3 (X = I, Br) Spin-3/2 Dimerized Antiferromagnetic Chain Crystals

We report that MoX3 (X = I, Br) are rare van der Waals materials that exhibit signatures of both quantum spin chains with a spin singlet ground state and classical Neel order. Bulk single crystals grown by chemical vapor transport exhibit classical antiferromagnetic ground states with a transition temperature of ~40 K as revealed by susceptibility and specific heat measurements. Above 40 K, the susceptibilities show the large, broad peaks associated with a quantum spin-singlet ground state and large singlet-triplet gaps of 21 meV and 25 meV. Monte Carlo simulations, density matrix renormalization-group calculations for finite spin-3/2 chains, and density functional theory reproduce the experimental behavior, confirming the interplay between strong one-dimensional intrachain and weak three-dimensional interchain couplings. MoX3 offers a unique platform for exploring quantum magnetism and magnetic excitations at the atomic chain limit, as these materials combine a 1D van der Waals motif, spin chain behavior, and classical interchain order.

cond-mat.str-el↗

arXiv2025

Giant Gate Response of the Charge in an Electron-Lattice Condensate

Efficient electrical capacitive control is important for the next generation of ultra-low-power and ultra-fast electronics and energy-storage devices. Correlated electronic phases offer a powerful route to enhancing field-effect control beyond the limits of conventional capacitive gating. In such systems, modest gate voltages can couple to an order parameter, producing responses far larger than expected from the electrostatics of non-interacting carriers. It was demonstrated that electron-electron interactions, in which the exchange and correlation energies among electrons lower the chemical potential of an electron system as the electron density increases, can significantly increase the effective capacitance over its geometric capacitance value. Here, we show that the electron-lattice or electron-phonon correlations in charge density wave (CDW) condensate can lead to a giant gate response with the corresponding capacitance enhancement. This unusual phenomenon is demonstrated in the quasi-one-dimensional CDW material, where the gate-induced change in CDW charge density exceeds predictions based on geometrical gate capacitance by one to two orders of magnitude. This "giant gating" effect arises from the coupling of the electric field to the CDW electron-lattice condensate, demonstrating a mechanism for massively amplifying gate response via collective electronic behavior. We quantify the effect by determining the quantum capacitance of the CDW charge and by constructing a band diagram for the gated CDW device. The obtained results can lead to an alternative strategy for continuing the downscaling of the transistor feature size in electronic technology.

cond-mat.str-el↗

arXiv2024

Exploring Nanoscale Photoresponse Mechanisms for Enhanced Photothermoelectric Effects in van der Waals Interfaces

Integrated photodetectors are crucial for their high speed, sensitivity, and efficient power consumption. In these devices, photocurrent generation is primarily attributed to the photovoltaic (PV) effect, driven by electron hole separations, and the photothermoelectric (PTE) effect, which results from temperature gradients via the Seebeck effect. As devices shrink, the overlap of these mechanisms-both dependent on the Fermi level and band structure-complicates their separate evaluation at the nanoscale. This study introduces a novel 3D photocurrent nano-imaging technique specifically designed to distinctly map these mechanisms in a Schottky barrier photodiode featuring a molybdenum disulfide and gold (MoS2 Au) interface. We uncover a significant PTE-dominated region extending several hundred nanometers from the electrode edge, a characteristic facilitated by the weak electrostatic forces typical in 2D materials. Unexpectedly, we find that incorporating hexagonal boron nitride (hBN), known for its high thermal conductivity, markedly enhances the PTE response. This counterintuitive enhancement stems from an optimal overlap between thermal and Seebeck profiles, presenting a new pathway to boost device performance. Our findings highlight the capability of this imaging technique to not only advance optoelectronic applications but also to deepen our understanding of light matter interactions within low-dimensional systems.

cond-mat.mtrl-sci↗

arXiv2024

Topological magnonic properties of an antiferromagnetic chain

The magnonic excitations of a dimerized, one-dimensional, antiferromagnetic chain can be trivial or topological depending on the signs and magnitudes of the alternating exchange couplings and the anisotropy. The topological phase that occurs when the signs of the two different exchange couplings alternate is qualitatively different from that of the Su-Schrieffer-Heeger model. A material that may exhibit these properties is the quasi-one-dimensional material MoI$_3$ that consists of dimerized chains weakly coupled to adjacent chains. The magnetic ground state and its excitations are analyzed both analytically and numerically using exchange and anisotropy parameters extracted from density functional theory calculations.

cond-mat.mes-hall↗

arXiv2024

Evolution of Berry Phase and Half-Metallicity in Cr$_2$Te$_3$ in Response to Strain, Filling, Thickness, and Surface Termination

Cr$_2$Te$_3$ is a ferromagnetic, quasi-two-dimensional layered material with perpendicular magnetic anisotropy, strong spin-orbit coupling, and non-trivial band topology. The non-trivial topology results in an intrinsic anomalous Hall conductivity (AHC) that switches sign under filling and biaxial strain. Thin films can exhibit half metallicity. Using density functional theory combined with maximally localized Wannier functions, we reveal the physical origins of the sensitivity of the sign of the AHC to strain and filling, and we determine the effect of surface termination on the half metallicity. We find that thin films terminated on the Te layers are the most energetically stable, but only the thin films terminated on both sides with the partially occupied Cr layers are half metals. In bulk Cr$_2$Te$_3$, the sensitivity of the sign of the AHC to strain and filling results from the complex Fermi surface comprised of three bands. Filling of local minima and bands near anti-crossings alters the local Berry curvature consistent with the negative to positive switching of the AHC. Similarly, strain depopulates a local minimum, shifts a degenerate point closer to the Fermi energy, and causes two spin-orbit split bands to reverse their order. These findings provide a physical understanding of the evolution of the Berry phase, AHC, and half-metallicity in Cr$_2$Te$_3$.

cond-mat.mtrl-sci↗

arXiv2023

Phonon States in NbTe$_4$ and TaTe$_4$ Quasi-One-Dimensional van der Waals Crystals

We report the results of polarization-dependent Raman spectroscopy of phonon states in single-crystalline quasi-one-dimensional NbTe$_4$ and TaTe$_4$ van der Waals materials. The measurements were conducted in the wide temperature range from 80 K to 560 K. Our results show that although both materials have identical crystal structures and symmetries, there is a drastic difference in the intensity of their Raman spectra. While TaTe4 exhibits well-defined peaks through the examined frequency and temperature ranges, NbTe4 reveals extremely weak Raman signatures. The measured spectral positions of the phonon peaks agree with the phonon band structure calculated using the density-functional theory. We offer possible reasons for the in-tensity differences between the two van der Waals materials. Our results provide insights into the phonon properties of NbTe$_4$ and TaTe$_4$ van der Waals materials and indicate the potential of Raman spectroscopy for studying charge-density-wave quantum condensate phases.

cond-mat.mtrl-sci↗

arXiv2023

Conductance Fluctuations and Domain Depinning in Quasi-2D Charge-Density-Wave 1T-TaS$_2$ Thin Films

We investigated the temperature dependence of the conductance fluctuations in thin films of the quasi-two-dimensional 1T-TaS$_2$ van der Waals material. The conductance fluctuations, determined from the derivative current-voltage characteristics of two-terminal 1T-TaS$_2$ devices, appear prominently at the electric fields that correspond to the transitions between various charge-density-wave macroscopic quantum condensate phases and at the onset of the depinning of the charge density wave domains. The depinning threshold field, $E_D$, monotonically increases with decreasing temperature within the nearly commensurate charge-density-wave phase. The $E_D$ value increases with the decreasing 1T-TaS$_2$ film thickness, revealing the surface pinning of the charge density waves. Our analysis suggests that depinning is absent in the commensurate phase. It is induced by the electric field but facilitated by local heating. The measured trends for $E_D$ of the domain depinning are important for understanding the physics of charge density waves in quasi-two-dimensional crystals and for developing electronic devices based on this type of quantum materials.

cond-mat.mes-hall↗

arXiv2023

Spin scattering and Hall effects in monolayer Fe3GeTe2

We theoretically show that the carrier transport in monolayer Fe3GeTe2 experiences a transition between anomalous Hall effect and spin Hall effect when the spin polarization of disorders switches between out-of-plane and in-plane. These Hall effects are allowed when the magnetization is polarized in-plane, breaking the C3 rotation symmetry. The transition originates from the selection rule of spin scattering, the strong spin-orbit coupling, and the van Hove singularities near the Fermi surface. The scattering selection rule tolerates the sign change of the disorder spin, which provides a convenient method to detect the switching of antiferromagnetic insulators regardless of the interfacial roughness in a heterostructure. This provides a convenient platform for the study of 2D spintronics through various van-der-Waals heterostructures.

cond-mat.mtrl-sci↗

arXiv2023

Structural, electronic, and magnetic properties of CrTe2

Two-dimensional chromium ditelluride (CrTe2) is a promising ferromagnetic layered material that exhibits long-range ferromagnetic ordering in the monolayer limit. The formation energies of the different possible structural phases (1T, 1H, 2H) calculated from density functional theory (DFT) show that the 1T phase is the ground state, and the energetic transition barriers between the phases, calculated by the nudged elastic band method, are large, on the order of 0.5 eV. The self-consistent Hubbard $U$ correction parameters are calculated for all the phases of CrTe$_2$. The calculated magnetic moment of 1T-CrTe$_2$ with $\geq 2$ layers lies in the plane, whereas the magnetic moment of a monolayer is out-of-plane. Band filling and tensile bi-axial strain cause the magnetic moment of a monolayer to switch from out-of-plane to in-plane, and compressive bi-axial strain in a bilayer causes the magnetic moment to switch from in-plane to out-of-plane. The magnetic anisotropy is shown to originate from the large spin orbit coupling (SOC) of the Te atoms and the anisotropy of the exchange coupling constants $J_{xy}$ and $J_z$ in an XXZ type Hamiltonian. Renormalized spin wave theory using experimental values for the magnetic anisotropy energy and Curie temperatures provides a range of values for the nearest neighbor exchange coupling.

cond-mat.mtrl-sci↗

arXiv2023

Structural tuning magnetism and topology in a magnetic topological insulator

To date, the most widely-studied quantum anomalous Hall insulator (QAHI) platform is achieved by dilute doping of magnetic ions into thin films of the alloyed tetradymite topological insulator (TI) (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ (BST). In these films, long-range magnetic ordering of the transition metal substituants opens an exchange gap $Δ$ in the topological surface states, stabilizing spin-polarized, dissipationless edge channels with a nonzero Chern number $\mathcal{C}$. The long-range ordering of the spatially separated magnetic ions is itself mediated by electronic states in the host TI, leading to a sophisticated feedback between magnetic and electronic properties. Here we present a study of the electronic and magnetic response of a BST-based QAHI system to structural tuning via hydrostatic pressure. We identify a systematic closure of the topological gap under compressive strain accompanied by a simultaneous enhancement in the magnetic ordering strength. Combining these experimental results with first-principle calculations we identify structural deformation as a strong tuning parameter to traverse a rich topological phase space and modify magnetism in the magnetically doped BST system.

cond-mat.mes-hall↗

arXiv2022

Strain-tunable Berry curvature in quasi-two-dimensional chromium telluride

Magnetic transition metal chalcogenides form an emerging platform for exploring spin-orbit driven Berry phase phenomena owing to the nontrivial interplay between topology and magnetism. Here we show that the anomalous Hall effect in pristine Cr2Te3 thin films manifests a unique temperature-dependent sign reversal at nonzero magnetization, resulting from the momentum-space Berry curvature as established by first-principles simulations. The sign change is strain tunable, enabled by the sharp and well-defined substrate/film interface in the quasi-two-dimensional Cr2Te3 epitaxial films, revealed by scanning transmission electron microscopy and depth-sensitive polarized neutron reflectometry. This Berry phase effect further introduces hump-shaped Hall peaks in pristine Cr2Te3 near the coercive field during the magnetization switching process, owing to the presence of strain-modulated magnetic domains. The versatile interface tunability of Berry curvature in Cr2Te3 thin films offers new opportunities for topological electronics.

cond-mat.mtrl-sci↗

arXiv2022

Specifics of the Elemental Excitations in "True One-Dimensional" MoI$_3$ van der Waals Nanowires

We report on the temperature evolution of the polarization-dependent Raman spectrum of exfoliated MoI$_3$, a van der Waals material with a "true one-dimensional" crystal structure that can be exfoliated to individual atomic chains. The temperature evolution of several Raman features reveals anomalous behavior suggesting a phase transition of a magnetic origin. Theoretical considerations indicate that MoI$_3$ is an easy-plane antiferromagnet with alternating spins along the dimerized chains and with inter-chain helical spin ordering. The calculated frequencies of the phonons and magnons are consistent with the interpretation of the experimental Raman data. The obtained results shed light on the specifics of the phononic and magnonic states in MoI$_3$ and provide a strong motivation for future study of this unique material with potential for spintronic device applications.

cond-mat.mes-hall↗

arXiv2022

Tuning Spin Transport in a Graphene Antiferromagnetic Insulator

Long-distance spin transport through anti-ferromagnetic insulators (AFMIs) is a long-standing goal of spintronics research. Unlike conventional spintronics systems, monolayer graphene in quantum Hall regime (QH) offers an unprecedented tuneability of spin-polarization and charge carrier density in QH edge states. Here, using gate-controlled QH edges as spin-dependent injectors and detectors in an all-graphene electrical circuit, for the first time we demonstrate a selective tuning of ambipolar spin transport through graphene $ν$=0 AFMIs. By modulating polarities of the excitation bias, magnetic fields, and charge carriers that host opposite chiralities, we show that the difference between spin chemical potentials of adjacent edge channels in the spin-injector region is crucial in tuning spin-transport observed across graphene AFMI. We demonstrate that non-local response vanishes upon reversing directions of the co-propagating edge channels when the spin-filters in our devices are no longer selective for a particular spin-polarization. Our results establish a versatile set of methods to tune pure spin transport via an anti-ferromagnetic media and open a pathway to explore their applications for a broad field of antiferromagnetic spintronics research.

cond-mat.mes-hall↗

arXiv2022

One-Dimensional van der Waals Quantum Materials -- State of the Art and Perspectives

The advent of graphene and other two-dimensional van der Waals materials, with their unique electrical, optical, and thermal properties, has resulted in tremendous progress for fundamental science. Recent developments suggest that taking one more step down in dimensionality - from monolayer, atomic sheets to individual atomic chains - can bring exciting prospects as the ultimate limit in material downscaling is reached while establishing an entirely new field of one-dimensional quantum materials. Here we review this emerging area of one-dimensional van der Waals quantum materials and anticipate its future directions. We focus on quantum effects associated with the charge-density-wave condensate, strongly-correlated phenomena, topological phases, and other unique physical characteristics, which are attainable specifically in van der Waals materials of lower dimensionality. Possibilities for engineering the properties of quasi-one-dimensional materials via compositional changes, vacancies, and defects, as well as the prospects of their applications in composites are also discussed.

cond-mat.mes-hall↗