arXiv subjects

Roger Lake

Publications and source records attributed to Roger Lake.

18 recordsLinked to original sources

arXiv2021

Metallic vs. Semiconducting Properties of Quasi-One-Dimensional Tantalum Selenide van der Waals Nanoribbons

We conducted a tip-enhanced Raman scattering spectroscopy (TERS) and photoluminescence (PL) study of quasi-1D TaSe3 nanoribbons exfoliated onto gold substrates. At a selenium deficiency of ~0.25 (Se/Ta=2.75,), the nanoribbons exhibit a strong, broad PL peak centered around ~920 nm (1.35 eV), suggesting their semiconducting behavior. Such nanoribbons revealed a strong TERS response under 785-nm laser excitation, allowing for their nanoscale spectroscopic imaging. Nanoribbons with a smaller selenium deficiency of ~0.15 (Se/Ta=2.85) did not show any PL or TERS response. The confocal Raman spectra of these samples agree with the previously-reported spectra of metallic TaSe3. The differences in the optical response of the nanoribbons examined in this study suggest that even small variations in Se content can induce changes in electronic structure, causing samples to exhibit either metallic or semiconducting character. The temperature-dependent electrical measurements of devices fabricated with both types of materials corroborate these observations. The density-functional-theory calculations revealed that incorporation of an oxygen atom in a Se vacancy can result in band gap opening and thus enable the transition from a metal to a semiconductor. However, the predicted bandgap is substantially smaller than that derived from PL data. These results indicate that the properties of van der Waals materials can vary significantly depending on stoichiometry, defect types and concentration, and possibly environmental and substrate effects. In view of this finding, local probing of nanoribbon properties with TERS becomes essential to understanding such low-dimensional systems.

cond-mat.mtrl-sci↗

arXiv2020

Anomalous Magneto Optic Effects from an Antiferromagnet Topological-Insulator Heterostructure

Materials with no net magnetization are generally not magneto-optically active. While this is individually true for a collinear antiferromagnet (AFM) and a topological insulator (TI), it is shown here that the magneto-optic Kerr effect (MOKE) emerges when the TI and AFM films are proximity coupled. Because of the lack of macroscopic magnetization, the AFM only couples to the spin of one of the TI's surfaces breaking time-reversal and inversion symmetry -- which leads to a tiny $\mu$deg MOKE signal. This small MOKE can be easily enhanced by 5 orders of magnitude, via cavity resonance, by optimizing the AFM and TI film thicknesses on the substrate. For slightly off-resonant structures, a 6 deg Kerr rotation can be electrically switched on by varying the Fermi energy. This requires less than 20 meV, which is encouraging for low power spintronics and magneto-optic devices. We further show that this simple structure is easily resilient to 5% material growth error.

cond-mat.mes-hall↗

arXiv2020

Current Oscillations in Quasi-2D Charge-Density-Wave 1T-TaS2 Devices: Revisiting the "Narrow Band Noise" Concept

We report on current oscillations in quasi two-dimensional (2D) 1T-TaS2 charge-density-wave devices. The MHz-frequency range of the oscillations and the linear dependence of the frequency of the oscillations on the current resemble closely the "narrow band noise," which was often observed in the classical bulk quasi-one-dimensional (1D) trichalcogenide charge-density-wave materials. In bulk quasi-1D materials, the "narrow band noise" was interpreted as a direct evidence of the charge-density-wave sliding. Despite the similarities, we argue that the nature of the MHz oscillations in quasi-2D 1T-TaS2 is different from the "narrow band noise." Analysis of the biasing conditions and current indicate that the observed oscillations are related to the current instabilities due to the voltage-induced transition from the nearly commensurate to incommensurate charge-density-wave phase.

cond-mat.mes-hall↗

arXiv2018

Thermal Percolation Threshold and Thermal Properties of Composites with Graphene and Boron Nitride Fillers

We investigated thermal properties of the epoxy-based composites with a high loading fraction - up to f=45 vol.% - of the randomly oriented electrically conductive graphene fillers and electrically insulating boron nitride fillers. It was found that both types of the composites revealed a distinctive thermal percolation threshold at the loading fraction f>20 vol.%. The graphene loading required for achieving the thermal percolation was substantially higher than the loading for the electrical percolation. Graphene fillers outperformed boron nitride fillers in the thermal conductivity enhancement. It was established that thermal transport in composites with the high filler loading, above the thermal percolation threshold, is dominated by heat conduction via the network of percolating fillers. Unexpectedly, we determined that the thermal transport properties of the high loading composites were influenced strongly by the cross-plane thermal conductivity of the quasi-two-dimensional fillers. The obtained results shed light on the debated mechanism of the thermal percolation, and facilitate the development of the next generation of the efficient thermal interface materials for electronic applications.

cond-mat.mtrl-sci↗

arXiv2018

Binding a Hopfion in Chiral Magnet Nanodisk

Hopfions are three-dimensional (3D) topological textures characterized by the integer Hopf invariant $Q_H$. Here, we present the realization of a zero--field, stable hopfion spin texture in a magnetic system consisting of a chiral magnet nanodisk sandwiched by two films with perpendicular magnetic anisotropy. The preimages of the spin texture and numerical calculations of $Q_H$ show that the hopfion has $Q_H=1$. Furthermore, another non-trivial state that includes a monopole--antimonopole pair (MAP) is also stabilized in this system. By applying an external magnetic field, hopfion and MAP states with the same polarization can be switched between each other. The topological transition between the hopfion and the MAP state involves a creation (annihilation) of the MAP and twist of the preimages. Our work paves the way to study non-trivial 3D topological spin textures and stimulates more investigations in the field of 3D spintronics.

cond-mat.mes-hall↗

arXiv2018

Gate controlled Majorana Zero Modes on 2D heterostructures

Half-integer conductance, the signature of Majorana edge modes, has been recently observed in a quantum anomalous Hall insulator/superconductor heterostructure. Here, we analyze a scheme for gate-tunable control of degenerate ground states of Majorana zero modes (MZM) in thin film topological superconductors. Gating the top surface of a thin film magnetic topological insulator controls the topological phase in the region underneath the gate. The voltage of the transition depends on the gate width, and narrower gates require larger voltages. Relatively long gates are required, on the order of a micron, to prevent hybridization of the end modes and to allow the creation of MZMs at low gate voltages. Applying a voltage to T{shaped and I{shaped gates localizes the Majoranas at their ends. This scheme may provide a facile method for implementing quantum gates for topological quantum computing.

cond-mat.mes-hall↗

arXiv2018

Twist Angle-Dependent Bands and Valley Inversion in 2D Materials/hBN Heterostructures

The use of relative twist angle between adjacent atomic layers in a van der Waals heterostructure, has emerged as a new degree of freedom to tune electronic and optoelectronic properties of devices based on 2D materials. Using ABA-stacked trilayer (TLG) graphene as the model system, we show that, contrary to conventional wisdom, the band structures of 2D materials are systematically tunable depending on their relative alignment angle between hexagonal BN (hBN), even at very large twist angles. Moreover, addition or removal of the hBN substrate results in an inversion of the K and K' valley in TLG's lowest Landau level (LL). Our work illustrates the critical role played by substrates in van der Waals heterostructures and opens the door towards band structure modification and valley control via substrate and twist angle engineering.

cond-mat.mes-hall↗

arXiv2018

Tunable Lifshitz Transitions and Multiband Transport in Tetralayer Graphene

As the Fermi level and band structure of two-dimensional materials are readily tunable, they constitute an ideal platform for exploring Lifshitz transition, a change in the topology of a material's Fermi surface. Using tetralayer graphene that host two intersecting massive Dirac bands, we demonstrate multiple Lifshitz transitions and multiband transport, which manifest as non-monotonic dependence of conductivity on charge density n and out-of-plane electric fieldD, anomalous quantum Hall sequences and Landau level crossings that evolve with n, D and B.

cond-mat.mes-hall↗

arXiv2017

Role of dimensional crossover on spin-orbit torque efficiency in magnetic insulator thin films

Magnetic insulators (MIs) attract tremendous interest for spintronic applications due to low Gilbert damping and absence of Ohmic loss. Magnetic order of MIs can be manipulated and even switched by spin-orbit torques (SOTs) generated through spin Hall effect and Rashba-Edelstein effect in heavy metal/MI bilayers. SOTs on MIs are more intriguing than magnetic metals since SOTs cannot be transferred to MIs through direct injection of electron spins. Understanding of SOTs on MIs remains elusive, especially how SOTs scale with the film thickness. Here, we observe the critical role of dimensionality on the SOT efficiency by systematically studying the MI layer thickness dependent SOT efficiency in tungsten/thulium iron garnet (W/TmIG) bilayers. We first show that the TmIG thin film evolves from two-dimensional to three-dimensional magnetic phase transitions as the thickness increases, due to the suppression of long-wavelength thermal fluctuation. Then, we report the significant enhancement of the measured SOT efficiency as the thickness increases. We attribute this effect to the increase of the magnetic moment density in concert with the suppression of thermal fluctuations. At last, we demonstrate the current-induced SOT switching in the W/TmIG bilayers with a TmIG thickness up to 15 nm. The switching current density is comparable with those of heavy metal/ferromagnetic metal cases. Our findings shed light on the understanding of SOTs in MIs, which is important for the future development of ultrathin MI-based low-power spintronics.

cond-mat.mes-hall↗

arXiv2017

Deficiency of the Bulk Spin Hall Effect Model for Spin-Orbit Torques in Magnetic Insulator/Heavy Metal Heterostructures

Electrical currents in a magnetic insulator/heavy metal heterostructure can induce two simultaneous effects, namely, spin Hall magnetoresistance (SMR) on the heavy metal side and spin-orbit torques (SOTs) on the magnetic insulator side. Within the framework of the pure spin current model based on the bulk spin Hall effect (SHE), the ratio of the spin Hall-induced anomalous Hall effect (SH-AHE) to SMR should be equal to the ratio of the field-like torque (FLT) to damping-like torque (DLT). We perform a quantitative study of SMR, SH-AHE, and SOTs in a series of thulium iron garnet/platinum or Tm3Fe5O12/Pt heterostructures with different Tm3Fe5O12 thicknesses, where Tm3Fe5O12 is a ferrimagnetic insulator with perpendicular magnetic anisotropy. We find the ratio between measured effective fields of FLT and DLT is at least 2 times larger than the ratio of the SH-AHE to SMR. In addition, the bulk SHE model grossly underestimates the spin torque efficiency of FLT. Our results reveal deficiencies of the bulk SHE model and also address the importance of interfacial effects such as the Rashba and magnetic proximity effects in magnetic insulator/heavy metal heterostructures.

cond-mat.mtrl-sci↗

arXiv2016

Graphene Contacts to a HfSe2/SnS2 Heterostructure

Placing graphene on SnS2 results in significant charge transfer, on the order of 10^13/cm^2, from the graphene to the SnS2, and the charge transfer results in a negative Schottky barrier contact for electron injection from the graphene into the SnS2 conduction band. However, due to the s-px,y composition of the SnS2 conduction band, the coupling between the SnS2 and the graphene is relatively weak. A third layer, HfSe2, placed between the SnS2 and the graphene, serves as a matrix element matching layer, since it has strong coupling to both the graphene and the SnS2. It increases the coupling to the graphene by a factor of 10, and it has little effect on the negative Schottky barrier height, since the conduction band wavefucntion of the SnS2 / HfSe2 is a coherent superposition of the orbitals from the two individual layers, such that there is no energy barrier for an electron to move between the two layers. This paper first investigates the electronic properties of the heterostructure bilayer SnS2 / HfSe2 in the presence of an applied vertical electric field, and then it investigates the trilayer systems of BN / SnS2 / HfSe2 and graphene / SnS2 / HfSe2. A tunneling Hamiltonian estimate of the the contact resistance of the graphene to the SnS2 / HfSe2 heterostructure indicates an excellent low-resistance contact.

cond-mat.mtrl-sci↗

arXiv2016

Direct Observation of Acoustic Phonon Confinement in Free-Standing Semiconductor Nanowires

Similar to electron waves, the phonon states in semiconductors can undergo changes induced by external boundaries. Modification of acoustic phonon spectrum in structures with periodically modulated elastic constant or mass density - referred to as phononic crystals - has been proven experimentally and utilized in practical applications. A possibility of modifying acoustic phonon spectrum in individual nanostructures via spatial confinement would bring tremendous benefits for controlling phonon-electron interaction and thermal conduction at nanoscale. However, despite strong scientific and practical importance, conclusive experimental evidence of acoustic phonon confinement in individual free-standing nanostructures, e.g. nanowires, is still missing. The length scale, at which phonon dispersion undergoes changes and a possibility of the phonon group velocity reduction, are debated. Here, we utilize specially designed high-quality GaAs nanowires (NWs) with different diameters, D, and large inter-nanowire distances to directly demonstrate acoustic phonon confinement. The measurements conducted with Brillouin - Mandelstam spectroscopy reveal confined phonon polarization branches with frequencies from 4 GHz to 40 GHz in NWs with D as large as ~128 nm, i.e. at length scale, which exceeds the "grey" phonon mean-free path in GaAs by an almost an order of magnitude. The phonon dispersion modification and phonon energy scaling with D in individual nanowires are in excellent agreement with theory. The obtained results can lead to more efficient nanoscale control of acoustic phonons, with benefits for nanoelectronics, thermoelectric energy conversion, thermal management, and novel spintronic technologies.

cond-mat.mes-hall↗

arXiv2016

Spin Josephson effects in Exchange coupled Anti-ferromagnets

The energy of exchange coupled antiferromagnetic insulators (AFMIs) is a periodic function of the relative in-plane orientation of the N\'{e}el vector fields. We show that this leads to oscillations in the relative magnetization of exchange coupled AFMIs separated by a thin metallic barrier. These oscillations pump a spin current ($I_{S}$) through the metallic spacer that is proportional to the rate of change of the relative in-plane orientation of the N\'{e}el vector fields. By considering spin-transfer torque induced by a spin chemical potential ($V_{S}$) at one of the interfaces, we predict non-Ohmic $I_{S}$-$V_{S}$ characteristics of AFMI exchange coupled hetero-structures, which leads to a non-local voltage across a spin-orbit coupled metallic spacer.

cond-mat.mes-hall↗

arXiv2016

Thermal Conductivity of Suspended Graphene with Defects

We investigate the thermal conductivity of suspended graphene as a function of the density of defects, ND, introduced in a controllable way. Graphene layers are synthesized using chemical vapor deposition, transferred onto a transmission electron microscopy grid, and suspended over ~7.5-micrometer size square holes. Defects are induced by irradiation of graphene with the low-energy electron beam (20 keV) and quantified by the Raman D-to-G peak intensity ratio. As the defect density changes from 2.0x10^10 cm-2 to 1.8x10^11 cm-2 the thermal conductivity decreases from ~(1.8+/-0.2)x10^3 W/mK to ~(4.0+/-0.2)x10^2 W/mK near room temperature. At higher defect densities, the thermal conductivity reveals an intriguing saturation behavior at a relatively high value of ~400 W/mK. The thermal conductivity dependence on defect density is analyzed using the Boltzmann transport equation and molecular dynamics simulations. The results are important for understanding phonon - point defect scattering in two-dimensional systems and for practical applications of graphene in thermal management.

cond-mat.mes-hall↗

arXiv2016

Observation of magnon-mediated current drag in Pt/yttrium iron garnet/Pt(Ta) trilayers

Pure spin current, a flow of spin angular momentum without flow of any companying net charge, is generated in two common ways. One makes use of the spin Hall effect in normal metals (NM) with strong spin-orbit coupling, such as Pt or Ta. The other utilizes the collective motion of magnetic moments or spin waves with the quasi-particle excitations called magnons. A popular material for the latter is yttrium iron garnet, a magnetic insulator (MI). Here we demonstrate in NM/MI/NM trilayers that these two types of spin currents are interconvertible across the interfaces, predicated as the magnon-mediated current drag phenomenon. The transmitted signal scales linearly with the driving current without a threshold and follows the power-law with n ranging from 1.5 to 2.5. Our results indicate that the NM/MI/NM trilayer structure can serve as a scalable pure spin current valve device which is an essential ingredient in spintronics.

cond-mat.mes-hall↗

arXiv2015

Strong Cavity-Pseudospin Coupling in Monolayer Transition Metal Dichalcogenides: Spontaneous Spin-Oscillations and Magnetometry

Strong coupling between the electronic states of monolayer transition metal dichalcogenides (TMDC) such as MoS$_2$, MoSe$_2$, WS$_2$, or WSe$_2$, and a two-dimensional (2D) photonic cavity gives rise to several exotic effects. The Dirac type Hamiltonian for a 2D gapped semiconductor with large spin-orbit coupling facilitates pure Jaynes-Cummings type coupling in the presence of a single mode electric field. The presence of an additional circularly polarized beam of light gives rise to valley and spin dependent cavity-QED properties. The cavity causes the TMDC monolayer to act as an on-chip coherent light source and a spontaneous spin-oscillator. In addition, a TMDC monolayer in a cavity is a sensitive magnetic field sensor for an in-plane magnetic field.

cond-mat.mes-hall↗

arXiv2015

Acoustic Phonon Spectrum and Thermal Transport in Nanoporous Alumina Arrays

We report results of a combined investigation of thermal conductivity and acoustic phonon spectra in nanoporous alumina membranes with the pore diameter decreasing from D=180 nm to 25 nm. The samples with the hexagonally arranged pores were selected to have the same porosity of ~13%. The Brillouin-Mandelstam spectroscopy measurements revealed bulk-like phonon spectrum in the samples with D=180-nm pores and spectral features, which were attributed to spatial confinement, in the samples with 25-nm and 40-nm pores. The velocity of the longitudinal acoustic phonons was reduced in the samples with smaller pores. Analysis of the experimental data and calculated phonon dispersion suggests that both phonon-boundary scattering and phonon spatial confinement affect heat conduction in membranes with the feature sizes D<40 nm.

cond-mat.mes-hall↗

arXiv2010

Thermoelectric properties of Bi2Te3 atomic quintuple thin films

Motivated by recent experimental realizations of quintuple atomic layer films of Bi2Te3,the thermoelectric figure of merit, ZT, of the quintuple layer is calculated and found to increase by a factor of 10 (ZT = 7.2) compared to that of the bulk at room temperature. The large enhancement in ZT results from the change in the distribution of the valence band density of modes brought about by the quantum confinement in the thin film. The theoretical model uses ab initio electronic structure calculations (VASP) with full quantum-mechanical structure relaxation combined with a Landauer formalism for the linear-response transport coefficients.

cond-mat.mtrl-sci↗