Rohit Soni | Searcharxiv

arXiv2026

Anisotropic light-electron-phonon coupling and ultrafast carrier separation in ferroelectric BaTiO$_3$

Ferroelectric materials with built-in electric fields are useful for ultrafast electronics and conversion of light into electrical energy, yet the interaction of carrier motion with ultrafast relaxation processes remains nontrivial. Combining ultrafast electron diffraction with electron microscopy of electromagnetic fields, we capture ultrafast lattice dynamics and nanometer-scale carrier transport in ferroelectric BaTiO$_3$. We discover that BaTiO$_3$ reacts to light with an anisotropic electron-phonon coupling that depends on the optical polarization of the excitation light. Excited electrons relax two times faster into phonons when the optical electric field aligns to the ferroelectric symmetry break. Furthermore, ultrafast electron electrometry captures the motion and separation of photo-excited electron-hole pairs in the presence of the ferroelectric field. These combined results provide insight into the tangled and anisotropic interaction of photons with phonons and the ferroelectric field, producing phonons and voltages in a stepwise reaction path.

cond-mat.mtrl-sci↗

arXiv2012

Fundamental Issues and Problems in the Realization of Memristors

In 2008, researchers at the Hewlett-Packard (HP) laboratories claimed to have found an analytical physical model for a genuine memristor device [1]. The model is considered for a thin TiO_2 film containing a region which is highly self-doped with oxygen vacancies and a region which is less doped, i.e., a single-phase material with a built-in chemical inhomogeneity sandwiched between two platinum electrodes. On base of the proposed model, Strukov et al. [1] were able to obtain the characteristic dynamical state equation and current-voltage relation for a genuine memristor. However, some fundamental facts of electrochemistry have been overlooked by the authors while putting forward their model, namely the coupling of diffusion currents at the boundary between both regions. The device will operate for a certain time like a "chemical capacitor" until the chemical inhomogeneity is balanced out, thus violating the essential requirement on a genuine memristor, the so-called "no energy discharge property". Moreover, the dynamical state equation for the HP-memristor device must fail as this relation violates by itself Landauer's principle of the minimum energy costs for information processing. Maybe, such an approach might be upheld if one introduces an additional prerequisite by specifying the minimum amount of electric power input to the device which is required to continuously change internal, physical states of the considered system. However, we have reasonable doubts with regard to this.

cond-mat.mes-hall↗