arXiv subjects

Rolf J. Haug

Publications and source records attributed to Rolf J. Haug.

At least 19 recordsLinked to original sources

arXiv2025

Anomalous Electrical Transport in SnSe$_2$ Nanosheets: Role of Thickness and Surface Defect States

This work examines the influence of thickness on the electrical transport properties of mechanically exfoliated two-dimensional SnSe$_2$ nanosheets, derived from the bulk single crystal. Contrary to conventional trend observed in two-dimensional systems, we find a semiconducting to metallic resistivity behavior with decreasing thickness. The analysis of low-temperature conduction indicates an increased density of states at Fermi-level with decreasing thickness, which is further corroborated by gate bias dependent conductance measurement. The enhanced conductivity in thinner flake is attributed to the n-type doping arising from surface defect states. The presence and evolution of these defect states with thickness is probed by thickness-dependent room-temperature Raman spectroscopy. Our study provides insights into the thickness-dependent electronic transport mechanism of SnSe$_2$ and the crucial role of defect states in governing the observed conductivity behavior.

cond-mat.mes-hall↗

arXiv2025

Metal-Insulator transition and Charge Transport Mechanisms in SnSe$_2$ Field-Effect Transistor

We report an observation of metal-insulator transition in a thin film of SnSe$_2$. The room-temperature carrier concentration of SnSe$_2$ film was increased by electrostatic doping to 1.14$\times$ 10$^{13}$ cm$^{-2}$. A crossover from insulating phase to metallic state was clearly observed. The low-temperature charge transport mechanism is governed by two-dimensional (2D) variable-range hopping. This mechanism is influenced by band bending and gap states introduced by selenium vacancies. At low temperatures, the mobility is primarily limited by charged impurities, while at higher temperatures, it follows a power-law dependence, $μ= T^{-γ}$, indicating a dominance of electron-phonon scattering. The application of a gate field shifts the Fermi level toward the conduction band, and at sufficiently high temperatures, this drives the system into a metallic state. Our findings offer insights into the charge transport mechanisms in SnSe$_2$ FET, this understanding will allow for the optimization of other 2D materials for advanced electronic device applications.

cond-mat.mtrl-sci↗

arXiv2025

Long-range spin transport in asymmetric quadruple quantum dots configurations

We theoretically investigate long-range coherent charge transport in linear quadruple quantum dot (QQD) arrays under reduced symmetry configurations. Employing a master equation approach, we identify precise resonant conditions that enable minimal occupation of intermediate dots, thereby facilitating long-range transfer between distant sites. Our results highlight the critical role of parameter asymmetry and coherent tunneling mechanisms in achieving efficient quantum state transfer.

cond-mat.mes-hall↗

arXiv2025

Interplay between Hund's rule and Kondo effect in a quantum dot

The interaction between localized spins on a quantum dot and free electrons in the reservoirs forms a many-particle entangled system giving rise to the Kondo effect. Here, we investigate electron transport in the third shell of a gate-defined GaAs quantum dot. The addition energy shows a maximum at half-filling of the shell which can be described analytically with Hund's rule exchange interaction. For 7 to 11 electrons occupying the quantum dot Zero-bias anomalies characteristic for the Kondo effect are observed, but with unexpected widths. Here the quantum dot has to be described as a multi-orbital Kondo impurity with Hund's interaction. In this way this quantum dot can be seen as a model system for a Hund's coupled mixed-valence quantum impurity as appearing in Hund's metals where local ferromagnetic interactions between orbitals lead to the emergence of complex electronic states.

cond-mat.mes-hall↗

arXiv2025

Real-Time Detection and Control of Correlated Charge Tunneling in a Quantum Dot

We experimentally demonstrate the real-time detection and control of correlated charge tunneling in a dynamically driven quantum dot. Specifically, we measure the joint distribution of waiting times between tunneling charges and show that the waiting times for holes may be strongly correlated due to the periodic drive and the Coulomb interactions on the dot, although the electron waiting times are not. Our measurements are in excellent agreement with a theoretical model that allows us to develop a detailed understanding of the correlated tunneling events. We also demonstrate that the degree of correlations can be controlled by the drive. Our experiment paves the way for systematic real-time investigations of correlated electron transport in low-dimensional nanostructures.

cond-mat.mes-hall↗

arXiv2024

Revealing Hidden States in Quantum Dot Array Dynamics: Quantum Polyspectra Versus Waiting Time Analysis

Quantum dots (QDs) are pivotal for the development of quantum technologies, with applications ranging from single-photon sources for secure communication to quantum computing infrastructures. Understanding the electron dynamics within these QDs is essential for characterizing their properties and functionality. Here, we show how by virtue of the recently introduced quantum polyspectral analysis of transport measurements, the complex transport measurements of multi-electron QD systems can be analyzed. This method directly relates higher-order temporal correlations of a raw quantum point contact (QPC) current measurement to the Liouvillian of the measured quantum system. By applying this method to the two-level switching dynamics of a double QD system, we reveal a hidden third state, without relying on the identification of quantum jumps or prior assumptions about the number of involved quantum states. We show that the statistics of the QPC current measurement can identically be described by different three-state Markov models, each with significantly different transition rates. Furthermore, we compare our method to a traditional analysis via waiting-time distributions for which we prove that the statistics of a three-state Markov model is fully described without multi-time waiting-time distributions even in the case of two level switching dynamics. Both methods yield the same parameters with a similar accuracy. The quantum polyspectra method, however, stays applicable in scenarios with low signal-to-noise, where the traditional full counting statistics falters. Our approach challenges previous assumptions and models, offering a more nuanced understanding of QD dynamics and paving the way for the optimization of quantum devices.

quant-ph↗

arXiv2024

Direct measurement of spin-flip rates in single-electron tunneling

Spin-flips are one of the limiting factors for spin-based information processing. We demonstrate a transport approach for determining the spin-flip rates of a self-assembled InAs double quantum dot occupied by a single electron. In such devices, different Landé factors lead to an inhomogeneous Zeeman splitting, so that the two spin channels can never be at resonance simultaneously, leading to a spin blockade at low temperatures. This blockade is analyzed in terms of spin flips for different temperatures and magnetic fields. Our results are in good agreement with a quantum master equation that combines the dot-lead couplings with ohmic dissipation stemming from spin-flip cotunneling.

cond-mat.mes-hall↗

arXiv2023

Surface quantum dots with pure, coherent, and blinking-free single photon emission

The surface of semiconductor nanostructures has a major impact on their electronic and optical properties. Disorder and defects in the surface layer typically cause degradation of charge carrier transport and radiative recombination dynamics. However, surface vicinity is inevitable for many scalable nano-optical applications. Epitaxially grown quantum dots are the best candidate for high-performance single photon emission and show great potential for quantum technologies. Yet, these emitters only reveal their excellent properties if they are deeply embedded in a semiconductor host. Until today, quantum dots close to surfaces yield weak, broad, and unstable emissions. Here, we show the complete restoration of optical properties from quantum dots grown directly on a semiconductor surface. The vanishing luminescence from the as-grown sample turns into bright, ultra-stable, coherent and blinking-free single photon emission after sulphur passivation. Under quasi-resonant excitation, single photons are generated with 98.8% purity, 77% indistinguishability, linewidths down to 4 $μ$eV and 99.69% persistency across 11 orders of magnitude in time. The emission is stable even after two years and when being subjected to nanomanufacturing processes. Some long-standing stumbling blocks for surface-dominated quantum dots are thereby removed, unveiling new possibilities for hybrid nano-devices and applications in quantum communication or sensing.

cond-mat.mes-hall↗

arXiv2023

A solid-state source of single and entangled photons at diamond SiV$^-$-center transitions operating at 80K

Large-scale quantum networks require the implementation of long-lived quantum memories as stationary nodes interacting with qubits of light. Epitaxially grown quantum dots hold great potential for the on-demand generation of single and entangled photons with high purity and indistinguishability. Coupling these emitters to memories with long coherence times enables the development of hybrid nanophotonic devices incorporating the advantages of both systems. Here we report the first GaAs/AlGaAs quantum dots grown by droplet etching and nanohole infilling method, emitting single photons with a narrow wavelength distribution (736.2 $\pm$ 1.7 nm) close to the zero-phonon line of Silicon-vacancy centers. Polarization entangled photons are generated via the biexciton-exciton cascade with a fidelity of (0.73 $\pm$ 0.09). High single photon purity is maintained from 4 K (g$^($$^2$$^)$(0) = 0.07 $\pm$ 0.02) up to 80 K (g$^($$^2$$^)$(0) = 0.11 $\pm$ 0.01), therefore making this hybrid system technologically attractive for real-world quantum photonic applications.

quant-ph↗

arXiv2022

Temperature-dependent broadening of coherent current peaks in InAs double quantum dots

Quantum systems as used for quantum computation or quantum sensing are nowadays often realized in solid state devices as e.g. complex Josephson circuits or coupled quantum-dot systems. Condensed matter as an environment influences heavily the quantum coherence of such systems. Here, we investigate electron transport through asymmetrically coupled InAs double quantum dots and observe an extremely strong temperature dependence of the coherent current peaks of single-electron tunneling. We analyze experimentally and theoretically the broadening of such coherent current peaks up to temperatures of 20 K and we are able to model it with quantum dissipation being due to two different bosonic baths. These bosonic baths mainly originate from substrate phonons. Application of a magnetic field helps us to identify the different quantum dot states through their temperature dependence.

cond-mat.mes-hall↗

arXiv2021

Controlled emission time statistics of a dynamic single-electron transistor

Quantum technologies involving qubit measurements based on electronic interferometers rely critically on accurate single-particle emission. However, achieving precisely timed operations requires exquisite control of the single-particle sources in the time domain. Here, we demonstrate accurate control of the emission time statistics of a dynamic single-electron transistor by measuring the waiting times between emitted electrons. By ramping up the modulation frequency, we controllably drive the system through a crossover from adiabatic to nonadiabatic dynamics, which we visualize by measuring the temporal fluctuations at the single-electron level and explain using detailed theory. Our work paves the way for future technologies based on the ability to control, transmit, and detect single quanta of charge or heat in the form of electrons, photons, or phonons.

cond-mat.mes-hall↗

arXiv2020

Spectral properties of stochastic resonance in quantum transport

We investigate theoretically and experimentally stochastic resonance in a quantum dot coupled to electron source and drain via time-dependent tunnel barriers. A central finding is a transition visible in the current noise spectrum as a bifurcation of a dip originally at zero frequency. The transition occurs close to the stochastic resonance working point and relates to quantized pumping. For the evaluation of power spectra from measured waiting times, we generalize a result from renewal theory to the ac driven case. Moreover, we develop a master equation method to obtain phase-averaged current noise spectra for driven quantum transport.

cond-mat.mes-hall↗

arXiv2019

Disorder induced helical-edge transport near $ν$=0 of monolayer graphene

The complex nature of filling factor $ν$=0 of monolayer graphene is studied in magnetotransport experiments. As function of perpendicular magnetic field a metal-insulator transition is observed, which is attributed to disorder-induced Landau level broadening in the canted antiferromagnetic phase. In the metallic regime a separation of the zeroth Landau level appears and signs of the quantum spin Hall effect are seen near $ν$=0. In addition to local transport, nonlocal transport experiments show results being consistent with helical edge transport.

cond-mat.mes-hall↗

arXiv2019

Linking interlayer twist angle to geometrical parameters of self-assembled folded graphene structures

Thin adhesive films can be removed from substrates, torn, and folded in distinct geometries under external driving forces. In two-dimensional materials, however, these processes can be self-driven as shown in previous studies on folded twisted bilayer graphene nanoribbons produced by spontaneous tearing and peeling from a substrate. Here, we use atomic force microscopy techniques to generate and characterize the geometrical structure of naturally self-grown folded nanoribbon structures. Measurements of nanoribbon width and interlayer separation reveal similar twist-angle dependences possibly caused by the anisotropy in the bilayer potential. In addition, analysis of the data shows an unexpected correlation between the height of the folded arc edge -parameterized by a radius R-, and the ribbon width, suggestive of a self-growth process driven by a variable cross-sectional shape. These observations are well described by an energy minimization model that includes the bilayer adhesion energy density as represented by a distance dependent Morse potential. We obtain an analytical expression for the radius R versus the ribbon width that predicts a renormalized bending rigidity and stands in good agreement with experimental observations. The newly found relation between these geometrical parameters suggests a mechanism for tailored growth of folded twisted bilayer graphene -- a platform for many intriguing physics phenomena.

cond-mat.mes-hall↗

arXiv2016

Nonequilibrium mesoscopic conductance fluctuations as the origin of 1/f noise in epitaxial graphene

We investigate the 1/f noise properties of epitaxial graphene devices at low temperatures as a function of temperature, current and magnetic flux density. At low currents, an exponential decay of the 1/f noise power spectral density with increasing temperature is observed that indicates mesoscopic conductance fluctuations as the origin of 1/f noise at temperatures below 50 K. At higher currents, deviations from the typical quadratic current dependence and the exponential temperature dependence occur as a result of nonequilibrium conditions due to current heating. By applying the theory of Kubakaddi [S. S. Kubakaddi, Phys. Rev. B 79, 075417 (2009)], a model describing the 1/f noise power spectral density of nonequilibrium mesoscopic conductance fluctuations in epitaxial graphene is developed and used to determine the energy loss rate per carrier. In the regime of Shubnikov-de Haas oscillations a strong increase of 1/f noise is observed, which we attribute to an additional conductance fluctuation mechanism due to localized states in quantizing magnetic fields. When the device enters the regime of quantized Hall resistance, the 1/f noise vanishes. It reappears if the current is increased and the quantum Hall breakdown sets in.

cond-mat.mes-hall↗

arXiv2016

Berry Phase Transition in Twisted Bilayer Graphene

The electronic dispersion of a graphene bilayer is highly dependent on rotational mismatch between layers and can be further manipulated by electrical gating. This allows for an unprecedented control over electronic properties and opens up the possibility of flexible band structure engineering. Here we present novel magnetotransport data in a twisted bilayer, crossing the energetic border between decoupled monolayers and coupled bilayer. In addition a transition in Berry phase between pi and 2pi is observed at intermediate magnetic fields. Analysis of Fermi velocities and gate induced charge carrier densities suggests an important role of strong layer asymmetry for the observed phenomena.

cond-mat.mtrl-sci↗

arXiv2016

Interlayer Configurations in Twisted Bilayers of Folded Graphene

The folding of monolayer graphene leads to new layered systems, termed twisted bilayer graphene (TBG), generally displaying a certain interlayer rotation away from crystallographic alignment. We here present an atomic force microscopy study on folded graphene, revealing unexpectedly large twist angle dependent modulations of ~3 angstrom in interlayer distance. At the TBG surface, we find enhanced friction attributable to superlubricity in between incommensurate layers. At the bended edge, the radius of curvature scales with the folded length, congruent to earlier studies on carbon nanotubes.

cond-mat.mtrl-sci↗

arXiv2014

Superlattice structures in twisted bilayers of folded graphene

The electronic properties of bilayer graphene strongly depend on relative orientation of the two atomic lattices. Whereas Bernal-stacked graphene is most commonly studied, a rotational mismatch between layers opens up a whole new field of rich physics, especially at small interlayer twist. Here we report on magnetotransport measurements on twisted graphene bilayers, prepared by folding of single layers. These reveal a strong dependence on the twist angle, which can be estimated by means of sample geometry. At small rotation, superlattices with a wavelength in the order of 10 nm arise and are observed by friction atomic force microscopy. Magnetotransport measurements in this small-angle regime show the formation of satellite Landau fans. These are attributed to additional Dirac singularities in the band structure and discussed with respect to the wide range of interlayer coupling models.

cond-mat.mes-hall↗