arXiv subjects

Roman Böttger

Publications and source records attributed to Roman Böttger.

11 recordsLinked to original sources

arXiv2020

Ion-Irradiation-Induced Cobalt/Cobalt Oxide Heterostructures: Printing 3D Interfaces

Interfaces separating ferromagnetic (FM) layers from non-ferromagnetic layers offer unique properties due to spin-orbit coupling and symmetry breaking, yielding effects such as exchange bias, perpendicular magnetic anisotropy, spin-pumping, spin-transfer torques, conversion between charge and spin currents and vice-versa. These interfacial phenomena play crucial roles for magnetic data storage and transfer applications, which require forming FM nano-structures embedded in non-ferromagnetic matrices. Here, we investigate the possiblity of creating such nano-structures by ion-irradiation. We study the effect of lateral confinement on the ion-irradiation-induced reduction of non-magnetic metal oxides (e.g., antiferro- or paramagnetic) to form ferromagnetic metals. Our findings are later exploited to form 3-dimensional magnetic interfaces between Co, CoO and Pt by spatially-selective irradiation of CoO/Pt multilayers. We demonstrate that the mechanical displacement of the O atoms plays a crucial role during the reduction from insulating, non-ferromagnetic cobalt oxides to metallic cobalt. Metallic cobalt yields both perpendicular magnetic anisotropy in the generated Co/Pt nano-structures, and, at low temperatures, exchange bias at vertical interfaces between Co and CoO. If pushed to the limit of ion-irradiation technology, this approach could, in principle, enable the creation of densely-packed, atomic scale ferromagnetic point-contact spin-torque oscillator (STO) networks, or conductive channels for current-confined-path based current perpendicular-to-plane giant magnetoresistance read-heads.

cond-mat.mtrl-sci↗

arXiv2019

Magneto-structural correlations in a systematically disordered B2 lattice

Ferromagnetism in certain B2 ordered alloys such as Fe$_{60}$Al$_{40}$ can be switched on, and tuned, via antisite disordering of the atomic arrangement. The disordering is accompanied by a $\sim$1 % increase in the lattice parameter. Here we performed a systematic disordering of B2 Fe$_{60}$Al$_{40}$ thin films, and obtained correlations between the order parameter ($S$), lattice parameter ($a_0$), and the induced saturation magnetization ($M_{s}$). As the lattice is gradually disordered, a critical point occurs at 1-$S$=0.6 and $a_0$=291 pm, where a sharp increase of the $M_{s}$ is observed. DFT calculations suggest that below the critical point the system magnetically behaves as it would still be fully ordered, whereas above, it is largely the increase of $a_0$ in the disordered state that determines the $M_{s}$. The insights obtained here can be useful for achieving tailored magnetic properties in alloys through disordering.

cond-mat.mtrl-sci↗

arXiv2018

Nematicity of correlated systems driven by anisotropic chemical phase separation

The origin of nematicity, i.e., in-plane rotational symmetry breaking, and in particular the relative role played by spontaneous unidirectional ordering of spin, orbital, or charge degrees of freedom, is a challenging issue of magnetism, unconventional superconductivity, and quantum Hall effect systems, discussed in the context of doped semiconductor systems, such as Ga$_{1-x}$Mn$_x$As, Cu$_x$Bi$_2$Se$_3$, and Ga(Al)As/Al$_x$Ga$_{1-x}$As quantum wells, respectively. Here, guided by our experimental and theoretical results for In$_{1-x}$Fe$_x$As, we demonstrate that spinodal phase separation at the growth surface (that has a lower symmetry than the bulk) can lead to a quenched nematic order of alloy components, which then governs low temperature magnetic and magnetotransport properties, in particular the magnetoresistance anisotropy whose theory for the $C_{2v}$ symmetry group is advanced here. These findings, together with earlier data for Ga$_{1-x}$Mn$_x$As, show under which conditions anisotropic chemical phase separation accounts for the magnitude of transition temperature to a collective phase or merely breaks its rotational symmetry. We address the question to what extent the directional distribution of impurities or alloy components setting in during the growth may account for the observed nematicity in other classes of correlated systems.

cond-mat.mtrl-sci↗

arXiv2018

Defect-induced exchange bias in a single SrRuO3 layer

Exchange bias stems from the interaction between different magnetic phases and therefore it generally occurs in magnetic multilayers. Here we present a large exchange bias in a single SrRuO3 layer induced by helium ion irradiation. When the fluence increases, the induced defects not only suppress the magnetization and the Curie temperature, but also drive a metal-insulator transition at a low temperature. In particular, a large exchange bias field up to around 0.36 T can be created by the irradiation. This large exchange bias is related to the coexistence of different magnetic and structural phases that are introduced by embedded defects. Our work demonstrates that spintronic properties in complex oxides can be created and enhanced by applying ion irradiation.

cond-mat.mtrl-sci↗

arXiv2018

Tunable disorder and localization in the rare-earth nickelates

The rare-earth nickelates are a rich playground for transport properties, known to host non-Fermi liquid character, resistance saturation and metal-insulator transitions. We report a study of transport in LaNiO3 in the presence of tunable disorder induced by irradiation. While pristine LaNiO3 samples are metallic, highly irradiated samples show insulating behaviour at all temperatures. Using irradiation fluence as a tuning handle, we uncover an intermediate region hosting a metal-insulator transition. This transition falls within the Mott-Ioffe-Regel regime wherein the mean free path is comparable to lattice spacing. In the high temperature metallic regime, we find a transition from non-Fermi liquid to a Fermi-liquid-like character. On the insulating side of the metal-insulator transition, we find behaviour that is consistent with weak localization. This is reflected in magnetoresistance that scales with the square of the field and in resistivity. In the highly irradiated insulating samples, we find good agreement with variable range hopping, consistent with Anderson localization. We find qualitatively similar behaviour in thick PrNiO3 films as well. Our results demonstrate that ion irradiation can be used to tailor transport, serving as an excellent tool to study the physics of localization.

cond-mat.mtrl-sci↗

arXiv2018

CMOS-compatible controlled hyperdoping of silicon nanowires

Hyperdoping consists of the intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy levels into an intermediate band between the valence and conduction bands.[1,2] Recently, bulk Si hyperdoped with chalcogens or transition metals has been demonstrated to be an appropriate intermediate-band material for Si-based short-wavelength infrared photodetectors.[3-5] Intermediate-band nanowires could potentially be used instead of bulk materials to overcome the Shockley-Queisser limit and to improve efficiency in solar cells,[6-9] but fundamental scientific questions in hyperdoping Si nanowires require experimental verification. The development of a method for obtaining controlled hyperdoping levels at the nanoscale concomitant with the electrical activation of dopants is, therefore, vital to understanding these issues. Here, we show a CMOS-compatible technique based on non-equilibrium processing for the controlled doping of Si at the nanoscale with dopant concentrations several orders of magnitude greater than the equilibrium solid solubility. Through the nanoscale spatially controlled implantation of dopants, and a bottom-up template-assisted solid phase recrystallization of the nanowires with the use of millisecond-flash lamp annealing, we form Se-hyperdoped Si/SiO2 core/shell nanowires that have a room-temperature sub-band gap optoelectronic photoresponse when configured as a photoconductor device.

cond-mat.mtrl-sci↗

arXiv2018

Electronic phase separation in insulating (Ga,Mn)As with low compensation: Super-paramagnetism and hopping conduction

In the present work, low compensated insulating (Ga,Mn)As with 0.7% Mn is obtained by ion implantation combined with pulsed laser melting. The sample shows variable-range hopping transport behavior with a Coulomb gap in the vicinity of the Fermi energy, and the activation energy is reduced by an external magnetic field. A blocking super-paramagnetism is observed rather than ferromagnetism. Below the blocking temperature, the sample exhibits a colossal negative magnetoresistance. Our studies confirm that the disorder-induced electronic phase separation occurs in (Ga,Mn)As samples with a Mn concentration in the insulator-metal transition regime, and it can account for the observed superparamagnetism and the colossal magnetoresistance.

cond-mat.mtrl-sci↗

arXiv2018

Implanting germanium into graphene

Incorporating heteroatoms into the graphene lattice may be used to tailor its electronic, mechanical and chemical properties. Direct substitutions have thus far been limited to incidental Si impurities and P, N and B dopants introduced using low-energy ion implantation. We present here the heaviest impurity to date, namely $^{74}$Ge$^+$ ions implanted into monolayer graphene. Although sample contamination remains an issue, atomic resolution scanning transmission electron microscopy imaging and quantitative image simulations show that Ge can either directly substitute single atoms, bonding to three carbon neighbors in a buckled out-of-plane configuration, or occupy an in-plane position in a divacancy. First principles molecular dynamics provides further atomistic insight into the implantation process, revealing a strong chemical effect that enables implantation below the graphene displacement threshold energy. Our results show that heavy atoms can be implanted into the graphene lattice, pointing a way towards advanced applications such as single-atom catalysis with graphene as the template.

cond-mat.mtrl-sci↗

arXiv2018

Symmetry-breaking supercollisions in Landau-quantized graphene

Recent pump-probe experiments performed on graphene in a perpendicular magnetic field have revealed carrier relaxation times ranging from picoseconds to nanoseconds depending on the quality of the sample. To explain this surprising behavior, we propose a novel symmetry-breaking defect-assisted relaxation channel. This enables scattering of electrons with single out-of-plane phonons, which drastically accelerate the carrier scattering time in low-quality samples. The gained insights provide a strategy for tuning the carrier relaxation time in graphene and related materials by orders of magnitude.

cond-mat.mtrl-sci↗

arXiv2017

Investigation of a possible electronic phase separation in the magnetic semiconductors Ga$_{1-x}$Mn$_{x}$As and Ga$_{1-x}$Mn$_{x}$P by means of fluctuation spectroscopy

We present systematic temperature-dependent resistance noise measurements on a series of ferromagnetic Ga$_{1-x}$Mn$_{x}$As epitaxial thin films covering a large parameter space in terms of the Mn content $x$ and other variations regarding sample fabrication. We infer that the electronic noise is dominated by switching processes related to impurities in the entire temperature range. While metallic compounds with $x>2$ % do not exhibit any significant change in the low-frequency resistance noise around the Curie temperature $T_\mathrm{C}$, we find indications for an electronic phase separation in films with $x<2$ % in the vicinity of $T_\mathrm{C}$, manifesting itself in a maximum in the noise power spectral density. These results are compared with noise measurements on an insulating Ga$_{1-x}$Mn$_{x}$P reference sample, for which the evidence for an electronic phase separation is even stronger and a possible percolation of bound magnetic polarons is discussed. Another aspect addressed in this work is the effect of ion-irradiation induced disorder on the electronic properties of Ga$_{1-x}$Mn$_{x}$As films and, in particular, whether any electronic inhomogeneities can be observed in this case. Finally, we put our findings into the context of the ongoing debate on the electronic structure and the development of spontaneous magnetization in these materials.

cond-mat.mtrl-sci↗

arXiv2017

Interplay between localization and magnetism in (Ga,Mn)As and (In,Mn)As

Ion implantation of Mn combined with pulsed laser melting is employed to obtain two representative compounds of dilute ferromagnetic semiconductors (DFSs): Ga1-xMnxAs and In1-xMnxAs. In contrast to films deposited by the widely used molecular beam epitaxy, neither Mn interstitials nor As antisites are present in samples prepared by the method employed here. Under these conditions the influence of localization on the hole-mediated ferromagnetism is examined in two DFSs with a differing strength of p-d coupling. On the insulating side of the transition, ferromagnetic signatures persist to higher temperatures in In1-xMnxAs compared to Ga1-xMnxAs with the same Mn concentration x. This substantiates theoretical suggestions that stronger p-d coupling results in an enhanced contribution to localization, which reduces hole-mediated ferromagnetism. Furthermore, the findings support strongly the heterogeneous model of electronic states at the localization boundary and point to the crucial role of weakly localized holes in mediating efficient spin-spin interactions even on the insulator side of the metal-insulator transition.

cond-mat.mtrl-sci↗