arXiv subjects

Roman Engel-Herbert

Publications and source records attributed to Roman Engel-Herbert.

10 recordsLinked to original sources

arXiv2026

Enhanced Superconductivity in Multilayer FeSe Films by Simplified Molecular Beam Epitaxy

Multi-unit-cell (UC) \b{eta}-FeSe films grown on SrTiO3(100) continue to attract attention because of the significant enhancement in the superconducting transition temperature (Tc) compared to that in bulk FeSe. In prior reports of molecular beam epitaxy (MBE)-grown \b{eta}-FeSe/SrTiO3(100), elaborate growth protocols have been used to achieve enhanced Tc, leading to a general belief that careful pre-treatment of the SrTiO3 substrate and post-growth annealing in ultrahigh vacuum (UHV) are essential. Here, we report a greatly simplified protocol for the MBE growth of superconducting multi-UC \b{eta}-FeSe films on SrTiO3(100), eliminating the need for careful substrate pre-treatment and post-growth UHV annealing while still achieving an enhanced Tc. With appropriate capping, epitaxial films with 14 UC thickness exhibit a zero-resistance transition temperature Tc ~ 20 K in ex situ electrical transport measurements. The MBE optimization process is guided by the growth-parameter dependencies of film morphology and structural properties, as characterized by reflection high-energy electron diffraction, X-ray diffraction, atomic force microscopy, and scanning transmission electron microscopy.

cond-mat.supr-con↗

arXiv2025

Proximity-tuned Magnetic and Transport Anomalies in All-epitaxial Fe5-xGeTe2/WSe2 Van der Waals Heterostructures

Van der Waals (vdW) heterostructures combining two-dimensional (2D) ferromagnets and semiconducting transition-metal dichalcogenides (TMDCs) offer highly promising opportunities for tailoring 2D magnetism through interfacial proximity effects, enabling unique physical phenomena inaccessible in 3D systems and achieving functionalities beyond conventional spintronics. However, current fabrication of vdW heterostructures still relies heavily on the manual stacking of exfoliated 2D flakes, leading to critical challenges in scalability, interfacial quality, thickness control and device integration. This work reports on the realization of all-epitaxial, high-quality Fe5-xGeTe2(FGT)/WSe2 heterostructures exhibiting perpendicular magnetic anisotropy (PMA) and room-temperature ferromagnetism. The FGT/WSe2 system demonstrates temperature-driven magnetic transitions, higher-order PMA contributions and large anisotropic magnetoresistance, highlighting sublattice-specific contributions to magnetic and transport properties. Notably, the FGT/WSe2 heterostructures display unconventional physical phenomena, including thickness- and temperature-dependent sign reversal of exchange bias, a reversed thickness trend in the unconventional Hall effect, and a non-monotonic PMA-thickness dependence. These anomalies indicate pronounced interfacial contributions arising from proximity effects enhanced by epitaxial interface quality. Collectively, this study provides deep insights into the magnetic and transport properties of FGT/WSe2 vdW heterostructures, establishing a scalable platform for exploring emergent 2D physics and advancing next-generation 2D spintronic technologies.

cond-mat.mes-hall↗

arXiv2025

Point defects and their dynamic behaviors in silver monolayer intercalated between graphene and SiC

Point defects give rise to sharp modifications in the structures and electronic properties of two-dimensional metals, offering an atomic-level platform for fundamental studies and potential applications. In this work, we investigate atomic-scale defects in a two-dimensional silver monolayer intercalated between epitaxial graphene and SiC using scanning tunneling microscopy. Dark and bright defects are identified as vacancies or substitutional impurities within the silver monolayer, each hosting a localized electronic state. Remarkably, under tunneling electron excitation at negative bias, the bright defects exhibit dynamic behaviors characterized by inelastic switching between two states. The switching can be reversibly controlled by the microscope tip, enabling the defects to function as atomic-scale two-level conductance switches. Analysis of defect switching reveals possible defect origins and the relationship between dark and bright defect species. Our findings establish a pathway to precise manipulation of defects in two-dimensional metals and uncover previously unexplored dynamics with potential use in nanoelectronics.

cond-mat.mes-hall↗

arXiv2025

Chemically-Disordered Transparent Conductive Perovskites with High Crystalline Fidelity

This manuscript presents a working model linking chemical disorder and transport properties in correlated-electron perovskites with high-entropy formulations and a framework to actively design them. We demonstrate this new learning in epitaxial Sr$x$(Ti,Cr,Nb,Mo,W)O$3$ thin films that exhibit exceptional crystalline fidelity despite a diverse chemical formulation where most B-site species are highly misfit with respect to valence and radius. X-ray diffraction, X-ray photoelectron spectroscopy, and transmission electron microscopy confirm a unique combination of chemical disorder and structural perfection in thick epitaxial layers. This combination produces significant electron correlation, low electrical resistivity, and an optical transparency window that surpasses that of constituent end-members, with a flattened frequency- and temperature-dependent response. We address the computational challenges of modeling such systems and investigate short-range ordering using cluster expansion. These results showcase that unusual d-metal combinations access an expanded property design space that is predictable using end-member characteristics -- though unavailable to them -- thus offering performance advances in optical, spintronic, and quantum devices.

cond-mat.mtrl-sci↗

arXiv2024

Mixed polytype/polymorph formation and its effects on the electronic properties in InSe films grown by molecular beam epitaxy on GaAs(111)B

The top-down synthesis of inherently ferroelectric semiconductors and their integration with traditional material platforms have the potential to enable new low power logic devices, and to harness the bulk photoelectric effect for more efficient photovoltaic cells. InSe is a layered van der Waals compound exhibiting multiple polytypes, with semiconducting gamma-InSe revealing a non-centrosymmetric space group and showing a high carrier mobility at room temperature. Here we report the growth of InSe films on close to lattice matched semi-insulating GaAs(111)B substrates by molecular beam epitaxy (MBE). Excellent nucleation behavior resulted in the growth of smooth, single phase InSe films. The dominant polytype determined from X-ray diffraction was the targeted gamma-InSe, however Raman spectroscopy revealed spatial variations in the overall low-intensity non-centrosymmetric vibration modes. Transmission electron microscopy uncovered the presence of the three bulk polytypes beta, gamma, and epsilon-InSe coexisting in the films arranging in nanosized domains. The different polytypes can be interpreted as sequences of stacking faults and rotational twin boundaries of gamma-InSe made from individual non-centrosymmetric Se-In-In-Se layers with P-6m2 symmetry. A second, centrosymmetric Se-In-In-Se layer polymorph was identified with P-3m symmetry, which is typically not present in InSe bulk phases. First principles calculations revealed small formation energy differences between the InSe polymorphs and polytypes, yet sizeable differences in their electronic properties. Nanoscale domain sizes of varying polytypes thus resulted in sizeable electronic disorder in the grown films that dominated the electronic transport properties. Our results indicate that bottom-up thin film synthesis is a viable synthesis route towards stabilization of InSe polytypes not present in the bulk.

cond-mat.mtrl-sci↗

arXiv2022

Atomic-scale modeling of the thermal decomposition of titanium(IV)-isopropoxide

The metal-organic (MO) compound titanium(IV)-isopropoxide (Ti(OiPr)4, TTIP) has tremendous technological relevance for thin film growth and coating technologies, offering a low-temperature deposition route for titania and titanium-oxide-based compounds. Thermal decomposition via the release of organic ligands, a key process in any TTIP-based synthesis approach, is commonly assumed to take place only via the beta-hydride elimination process. Here, we present reactive force field molecular dynamics (ReaxFF-MD) and metadynamics simulations that challenge this conventionally assumed scenario by revealing different, energetically preferred reaction pathways. The complete reaction scheme for the TTIP thermolysis, along with the statistics for the different ligand liberation steps and the associated reaction barriers for the bond dissociation events is presented. ReaxFF-MD simulations performed in the dilute limit realistically capture typical thin film deposition conditions, which in combination with metadynamics data, which produces free energies, constitutes a very powerful tool to quantitatively analyze the reaction dynamics of MO-based thin film growth processes and provide an atomic-scale understanding of how the remaining organic ligands detach from different titanium-containing MO fragments. The approach presented here allows for effective and straightforward identification of the undesirable temperature biasing effects in ReaxFF-MD and represents a predictive framework to identify chemical reaction pathways relevant to film growth processes at the atomic scale under realistic, experimentally relevant conditions. It enables computationally informed engineering of MO molecules with tailored decomposition and reaction pathways, and thus rapid and cost-effective advancements in MO molecule design for existing and future applications of thin film deposition and coating processes.

cond-mat.mtrl-sci↗

arXiv2022

Stoichiometric Control and Optical Properties of BaTiO3 Thin Films Grown by Hybrid MBE

BaTiO3 is a technologically relevant material in the perovskite oxide class with above room temperature ferroelectricity and a very large electro optical coefficient, making it highly suitable for emerging electronic and photonic devices. An easy, robust, straightforward, and scalable growth method is required to synthesize epitaxial BaTiO3 thin films with sufficient control over the film stoichiometry to achieve reproducible thin film properties. Here we report the growth of BaTiO3 thin films by hybrid molecular beam epitaxy. A self regulated growth window is identified using complementary information obtained from reflection high energy electron diffraction, the intrinsic film lattice parameter, film surface morphology, and scanning transmission electron microscopy. Subsequent optical characterization of the BaTiO3 films by spectroscopic ellipsometry revealed refractive index and extinction coefficient values closely resembling those of stoichiometric bulk BaTiO3 crystals for films grown inside the growth window. Even in the absence of a lattice parameter change of BaTiO3 thin films, degradation of optical properties was observed, accompanied by the appearance of a wide optical absorption peak in the infrared spectrum, attributed to optical transitions involving defect states present. Therefore, the optical properties of BaTiO3 can be utilized as a much finer and more straightforward probe to determine the stoichiometry level present in BaTiO3 films.

cond-mat.mtrl-sci↗

arXiv2022

Complementary Vanadium Dioxide Metamaterials with Enhanced Modulation Amplitude at Terahertz Frequencies

One route to create tunable metamaterials is through integration with "on-demand" dynamic quantum materials, such as vanadium dioxide (VO2). This enables new modalities to create high performance devices for historically challenging applications. Indeed, dynamic materials have often been integrated with metamaterials to imbue artificial structures with some degree of tunability. Conversely, metamaterials can be used to enhance and extend the natural tuning range of dynamic materials. Utilizing a complementary split ring resonator array deposited on a VO2 film, we demonstrate enhanced terahertz transmission modulation upon traversing the insulator-to-metal transition (IMT) at ~340 K. Our complementary metamaterial increases the modulation amplitude of the original VO2 film from 42% to 68.3% at 0.47 THz upon crossing the IMT, corresponding to an enhancement of 62.4%. Moreover, temperature dependent transmission measurements reveal a redshift of the resonant frequency arising from a giant increase of the permittivity of the VO2 film. Maxwell-Garnett effective medium theory was employed to explain the permittivity change upon transitioning through the IMT. Our results highlight that symbiotic integration of metamaterial arrays with quantum materials provides a powerful approach to engineer emergent functionality.

physics.app-ph↗

arXiv2021

Nanoscale Phonon Spectroscopy Reveals Emergent Interface Vibrational Structure of Superlattices

As the length-scales of materials decrease, heterogeneities associated with interfaces approach the importance of the surrounding materials. Emergent electronic and magnetic interface properties in superlattices have been studied extensively by both experiments and theory. $^{1-6}$ However, the presence of interfacial vibrations that impact phonon-mediated responses, like thermal conductivity $^{7,8}$, has only been inferred in experiments indirectly. While it is accepted that intrinsic phonons change near boundaries $^{9,10}$, the physical mechanisms and length-scales through which interfacial effects influence materials remain unclear. Herein, we demonstrate the localized vibrational response associated with the interfaces in SrTiO$_3$-CaTiO$_3$ superlattices by combining advanced scanning transmission electron microscopy imaging and spectroscopy and density-functional-theory calculations. Symmetries atypical of either constituent material are observed within a few atomic planes near the interface. The local symmetries create local phonon modes that determine the global response of the superlattice once the spacing of the interfaces approaches the phonon spatial extent. The results provide direct visualization and quantification, illustrating the progression of the local symmetries and interface vibrations as they come to determine the vibrational response of an entire superlattice; stated differently, the progression from a material with interfaces, to a material dominated by interfaces, to a material of interfaces as the period decreases. Direct observation of such local atomic and vibrational phenomena demonstrates that their spatial extent needs to be quantified to understand macroscopic behavior. Tailoring interfaces, and knowing their local vibrational response, provides a means of pursuing designer solids having emergent infrared and thermal responses.

cond-mat.mtrl-sci↗

arXiv2020

Changes of Magnetism in a Magnetic Insulator due to Proximity to a Topological Insulator

This letter reports the modification of magnetism in a magnetic insulator Y3Fe5O12 thin film by topological surface states (TSS) in an adjacent topological insulator Bi2Se3 thin film. Ferromagnetic resonance measurements show that the TSS in Bi2Se3 produces a perpendicular magnetic anisotropy, results in a decrease in the gyromagnetic ratio, and enhances the damping in Y3Fe5O12. Such TSS-induced changes become more pronounced as the temperature decreases from 300 K to 50 K. These results suggest a completely new approach for control of magnetism in magnetic thin films.

physics.app-ph↗