arXiv subjects
Publications and source records attributed to Roman Kolodka.
Pump-probe reflectivity reveals coherent acoustic oscillations at 33 and 8.2 GHz in a Ba(Fe$_{0.92}$Co$_{0.08}$)$_2$As$_2$ thin film. The acoustic response was analyzed using a modified logistic-function model, suggesting a temporal redistribution of coherent acoustic energy consistent with anharmonic decay of the higher-frequency mode into the lower-frequency mode.
We present a nematic response function model (NRFM) for fit-free direct extraction of the characteristic time of ultrafast electronic thermalization in iron-based superconductors, materials with electronic nematicity. By combining the NRFM for polarization-dependent pump--probe measurements of electronic nematic response with the two-temperature model (TTM) for sub-picosecond quasiparticle relaxation, we quantify the electronic thermalization timescales and their anisotropy. The nematic response function is modeled as the difference of normalized reflectivity signals, revealing a pronounced sub-picosecond extremum in signal evolution that directly yields the characteristic electronic thermalization time. This method demonstrates that the NRFM is consistent with TTM fits of transient optical response, yielding electronic thermalization time constants on the order of 110--230~fs for the FeSe$_{1-x}$Te$_x$ and Ba(Fe$_{0.92}$Co$_{0.08}$)$_2$As$_2$ thin films. The proposed approach can be applied to any material that exhibits electronic nematicity, providing a powerful tool for direct mapping of the relaxation time in nematic materials, avoiding complex experimental data-fitting procedures.
The shallow donor in zinc oxide (ZnO) is a promising semiconductor spin qubit with optical access. Single indium donors are isolated in a commercial ZnO substrate using plasma focused ion beam (PFIB) milling. Quantum emitters are identified optically by spatial and frequency filtering. The indium donor assignment is based on the optical bound exciton transition energy and magnetic dependence. The single donor emission is intensity and frequency stable with a transition linewidth less than twice the lifetime limit. The isolation of optically stable single donors post-FIB fabrication is promising for optical device integration required for scalable quantum technologies based on single donors in direct band gap semiconductors.