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Roman Stepanov

Publications and source records attributed to Roman Stepanov.

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Half-quantized anomalous Hall conductance in topological insulator/ferromagnet van der Waals heterostructures

The half-quantized anomalous Hall conductance (AHC) in topological materials is a condensed matter physics realization of the parity anomaly of (2+1) quantum field theory and an important challenge for both theoretical and experimental research. A possible realization of this phenomenon may be achieved by interfacing a two-dimensional (2D) ferromagnetic (FM) layer with one surface of a thin slab of a topological insulator (TI), which breaks the otherwise conserved time-reversal symmetry, leading to a gap opening in the Dirac-like energy spectrum of the TI surface states. The resulting heterostructure can support chiral currents where only one spin channel contributes to transport, producing a half-quantized Hall conductance ($e^2/2h$). In this work, using first-principles methods together with tight-binding models, we investigate the magnetization-induced gap, the properties of the sidewalls states, and Hall conductance in three different FI/TI van der Waals heterostructures that are relevant for ongoing experiments. We also discuss the factors that can hinder the realization of exact half-quantization in a realistic system and their implication for the quantum anomalous Hall effect and the topological magnetoelectric effect.

cond-mat.mes-hall

Topological Magneto-Optical Switching in Even-Layered MnBi$_2$Te$_4$

MnBi$_2$Te$_4$ (MBT) thin films provide a unique material platform in which magnetism, topology, and magneto-optical (MO) response can be tuned through layer-thickness and relative spin alignments. In this work, using a low-energy coupled Dirac cone model together with Wannier-based tight-binding Hamiltonian derived from \textit{ab-initio} calculations, we investigate topological MO switching in even-layered MBT films. We argue that the relative spin alignment of the outermost septuple-layers (SL) mainly controls the total Chern number, optical conductibility, and consequently, the MO response. For a 6-SL MBT thin film, we found that reversing the outermost-SL alignments from antiparallel to parallel switches the system from axion insulating state with $C=0$ and vanishing Faraday rotation to a Chern insulating state with $C=1$ and a quantized MO response, irrespective of $PT$-symmetry and net magnetization. Increasing thickness reveals an additional regime: while 8-SL MBT hosts only $C=0$ and $1$ states, a 12-SL MBT film supports a higher Chern number phase with $C=2$ with a doubled low-frequency Faraday rotation. Our results provide a thickness-dependent route to multilevel MO switching and establish MO spectroscopy as a direct probe of surface magnetism and topological order in MBT thin films.

cond-mat.mes-hall

Magneto-optical Response of 5-SL MnBi$_2$Te$_4$ in Spin-Flip States

Magneto-optical effects like Kerr and Faraday rotations provide a direct probe of topological order in thin films of the magnetic topological insulator MnBi$_2$Te$_4$ (MBT). Motivated by recent experimental studies of spin-flip/flop transitions in MBT thin films, we investigate the interplay between interlayer spin configurations, topological order, and magneto-optical response in five septuple-layer (5-SL) MBT using first-principles calculations and a simplified coupled-Dirac-cone model. Our results reveal that, despite possessing a non-zero out-of-plane magnetization, 5-SL MBT thin films can be either ${\cal C}=+1$ topological insulators or ${\cal C}=0$ topologically trivial insulators depending on the relative spin orientations of the top and bottom SLs. We evaluate the Faraday and Kerr rotation angles using tight-binding models derived from \textit{ab-initio} calculations and by comparing our results with those of a simplified coupled Dirac-cone model clarify the macroscopic mechanisms underlying the magneto-optical response of spin-flip states. These theoretical findings highlight the tunability of topological and magneto-optical properties in MBT thin films and provide microscopic insight into the emergence of complex topological order in layered antiferromagnetic materials.

cond-mat.mes-hall