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Rongjun Zhang

Publications and source records attributed to Rongjun Zhang.

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Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

The interactions between electrons and lattice vibrational modes play the key role in determining the carrier transport properties, thermoelectric performance and other physical quantities related to phonons in semiconductors. However, for two-dimensional (2D) materials, the widely-used models for carrier transport only consider the interactions between electrons and some specific phonon modes, which usually leads to inaccruate predictions of electrons/phonons transport properties. In this work, comprehensive investigations on full electron-phonon couplings and their influences on carrier mobility and thermoelectric performances of 2D group-IV and V elemental monolayers were performed, and we also analyzed in details the selection rules on electron-phonon couplings using group-theory arguments. Our calculations revealed that, for the cases of shallow dopings where only intravalley scatterings are allowed, the contributions from optical phonon modes are significantly larger than those from acoustic phonon modes in group-IV elemental monolayers, and LA and some specific optical phonon modes contribute significantly to the total intravalley scatterings. When the doping increases and intervalley scatterings are allowed, the intervalley scatterings are much stronger than intravalley scatterings, and ZA/TA/LO phonon modes dominate the intervalley scatterings in monolayer Si, Ge and Sn. The dominant contributions to the total intervalley scatterings are ZA/TO in monolayer P, ZA/TO in monolayer As and TO/LO in monolayer Sb. Based on the thorough investigations on the full electron-phonon couplings, we predict accurately the carrier mobilities and thermoelectric figure of merits in these two elemental crystals, and reveal significant reductions when compared with the calculations based on the widely-used simplified model.

cond-mat.mtrl-sci

Effects of intervalley scatterings in thermoelectric performance of band-convergent antimonene

The strategy of band convergence of multi-valley conduction bands or multi-peak valence bands has been widely used to search or improve thermoelectric materials. However, the phonon-assisted intervalley scatterings due to multiple band degeneracy are usually neglected in the thermoelectric community. In this work, we investigate the (thermo)electric properties of non-polar monolayer $β$- and $α$-antimonene considering full mode- and momentum-resolved electron-phonon interactions. We also analyze thoroughly the selection rules on electron-phonon matrix-elements using group-theory arguments. Our calculations reveal strong intervalley scattering between the nearly degenerate valley states in both $β$- and $α$-antimonene, and the commonly-used deformation potential approximation neglecting the dominant intervalley scattering gives inaccurate estimations of the electron-phonon scattering and thermoelectric transport properties. By considering full electron-phonon interactions based on the rigid-band approximation, we find that, the maximum value of the thermoelectric figure of merits $zT$ at room temperature reduces to 0.37 in $β$-antimonene, by a factor of 5.7 comparing to the value predicted based on the constant relaxation-time approximation method. Our work not only provides an accurate prediction of the thermoelectric performances of antimonenes that reveals the key role of intervalley scatterings in determining the electronic part of zT, but also showcases a computational framework for thermoelectric materials.

cond-mat.mtrl-sci

Electronic, transport and optical properties of monolayer $α$ and $β-$GeSe: A first-principles study

The extraordinary properties and the novel applications of black phosphorene induce the research interest on the monolayer group-IV monochalcogenides. Here using the first-principles calculations, we systematically investigate the electronic, transport and optical properties of monolayer $α-$ and $β-$GeSe, the latter of which was recently experimentally realized. We found that, monolayer $α-$GeSe is a semiconductor with direct band gap of 1.6 eV, and $β-$GeSe displays indirect semiconductor with the gap of 2.47 eV, respectively. For monolayer $β-$GeSe, the electronic/hole transport is anisotropic with an extremely high electron mobility of 7.84 $\times10^4$$cm^2/V\cdot {s}$ along the zigzag direction, comparable to that of black phosphorene. Furthermore, for $β-$GeSe, robust band gaps nearly disregarding the applied tensile strain along the zigzag direction is observed. Both monolayer $α-$ and $β-$GeSe exhibit anisotropic optical absorption in the visible spectrum.

cond-mat.mtrl-sci

Unexpected phonon-transport properties of stanene among 2D group-IV materials from \textit{ab initio}

It has been argued that stanene has lowest lattice thermal conductivity among 2D group-IV materials because of largest atomic mass, weakest interatomic bonding, and enhanced ZA phonon scattering due to the breaking of an out-of-plane symmetry selection rule. However, we show that although the lattice thermal conductivity $κ$ for graphene, silicene and germanene decreases monotonically with decreasing Debye temperature, unexpected higher $κ$ is observed in stanene. By enforcing all the invariance conditions in 2D materials and including Ge $3d$ and Sn $4d$ electrons as valence electrons for germanene and stanene respectively, the lattice dynamics in these materials are accurately described. A large acoustic-optical gap and the bunching of the acoustic phonon branches significantly reduce phonon scattering in stanene, leading to higher thermal conductivity than germanene. The vibrational origin of the acoustic-optical gap can be attributed to the buckled structure. Interestingly, a buckled system has two competing influences on phonon transport: the breaking of the symmetry selection rule leads to reduced thermal conductivity, and the enlarging of the acoustic-optical gap results in enhanced thermal conductivity. The size dependence of thermal conductivity is investigated as well. In nanoribbons, the $κ$ of silicene, germanene and stanene is much less sensitive to size effect due to their short intrinsic phonon mean free paths. This work sheds light on the nature of phonon transport in buckled 2D materials.

cond-mat.mes-hall

First-principle calculations of phononic, electronic and optical properties of monolayer arsenene and antimonene allotropes

Recently a stable monolayer of antimony in buckled honeycomb structure called antimonene was successfully grown on 3D topological insulator Bi$_2$Te$_3$ and Sb$_2$Te$_3$, which displays semiconducting properties. By first principle calculations, we systematically investigate the phononic, electronic and optical properties of $α-$ and $β-$ allotropes of monolayer arsenene/antimonene. We investigate the dynamical stabilities of these four materials by considering the phonon dispersions. The obtained electronic structures reveal the direct band gap of monolayer $α-$As/Sb and indirect band gap of $β-$As/Sb. Significant absorption is observed in $α-$Sb, which can be used as a broad saturable absorber.

cond-mat.mtrl-sci

Electronic, optical, and thermodynamic properties of borophene from first-principle calculations

Borophene (two-dimensional boron sheet) is a new type of two-dimensional material, which was recently grown successfully on single crystal Ag substrates. In this paper, we investigate the electronic structure and bonding characteristics of borophene by first-principle calculations. The band structure of borophene shows highly anisotropic metallic behaviour. The obtained optical properties of borophene exhibit strong anisotropy as well. The combination of high optical transparency and high electrical conductivity in borophene makes it a promising candidate for future design of transparent conductors used in photovoltaics. Finally, the thermodynamic properties are investigated based on the phonon properties.

cond-mat.mes-hall