arXiv subjects

Rosalía Serna

Publications and source records attributed to Rosalía Serna.

7 recordsLinked to original sources

arXiv2026

Antimony for broadband nanophotonics across the ultraviolet, visible and infrared

Semimetal elemental antimony (Sb) nanostructures show great potential for applications where nanophotonic properties play a key role, such as phase-change optical memories, non-linear optical elements, photothermal therapy agents, photodetectors and photocatalysts. However, designing advanced Sb-based photonic devices critically requires an accurate and reliable knowledge of the optical response of bulk and nanoscale Sb. Herein, we report for the first time a fully consistent and accurately measured dielectric function for Sb nanoscale films in a wide spectral range from the ultraviolet to the far infrared (4 - 0.04 eV, i.e. ~ 0.3 - 30 $μ$m), surpassing previous reports that explored a limited spectral range. It is found that the Sb spectral response is driven exclusively by giant interband transitions in the visible up to mid infrared (4 - 0.4 eV, i.e. ~ 0.3 - 3 $μ$m), and that their contribution dominates over that of free carriers down to 0.12 eV (i.e. ~ 10 $μ$m). Such spectral response enables Sb nanostructures to display spectrally selective and tunable nanophotonic resonances. First, we showcase interband plasmonic resonances in the visible-to-near infrared for Sb nanogratings. Second, we report giant refractive index dielectric resonances in the mid infrared for nanostructured Sb/dielectric/metal resonant cavities. These findings open a pathway to optimized planar Sb nanoscale designs enabling a tailored light-matter interaction, which will be useful for integrated data, telecom, medical, optoelectronic and energy conversion devices operating in a broad spectral range.

physics.optics↗

arXiv2025

Bismuth nanogratings with narrow plasmon resonances for dynamic polarized color generation and colorimetric sensing

Bismuth nanostructures are appealing for sustainable color generation and sunlight harvesting, thanks to their non-toxicity and their tunable visible-to-near infrared interband plasmon resonances. However, owing to their broad and polarization-insensitive spectral features, the nanostructures reported so far displayed a limited color tunability and were lacking other functionalities such as sensing. Herein, we report bismuth nanogratings with polarization-sensitive and narrow plasmon resonances (Q > 10). They were fabricated on the $cm^2$ scale following a lithography-free approach: conformal pulsed laser deposition of bismuth onto both the reflective and transparent nanostructured layers of DVDs. We characterized their specular reflectance for different orientations of the plane of incidence, angles of incidence, and polarizations of light. When light is polarized in the plane perpendicular to the lines, plasmon resonances occur and shift across the visible-to-near infrared upon changing the angle of incidence. In contrast, no such resonances occur when light is polarized in the plane parallel to the lines. This results in well-contrasted, polarization-sensitive colors, which are iridescent for the former orientation of polarization, and not for the latter. Resonances strongly shift upon changing the refractive index of the surrounding medium (> 500 nm/RIU), resulting in a marked change in the plasmonic color, e.g., from green in air to red in water. This showcases the potential of these nanogratings for dynamic polarized color generation and colorimetric sensing.

physics.optics↗

arXiv2025

Tailoring the morphology of ultrathin bismuth films around percolation for thickness-optimized optical cavities

Ultrathin bismuth films (<10 nm) are emerging candidates for advanced applications in photonics. It has been shown that Bi-based subwavelength optical cavities show outstanding features, including broad tuneable resonances for structural color generation and broadband perfect absorption for light harvesting. While current devices are based on continuous Bi films, integrating ultrathin films around the percolation threshold with a tailored morphology promises to enable more compact devices with a wider tunability range and/or enhanced optical response. In this context, we report the tailoring of the morphology and UV-Vis-NIR effective optical dielectric function ( $\varepsilon$= $\varepsilon_1$+i$\varepsilon_2$) of ultrathin Bi films around the percolation threshold. Just below percolation, the films effective optical permittivity $\varepsilon_1$ differs markedly from that of a continuous film, as it turns from negative to positive while its effective optical loss $\varepsilon_2$ is reduced. We showcase the relevance of such dielectric tunability for the design of enhanced subwavelength optical cavities operating in the NIR and visible regions. In particular, we show that discontinuous near-percolation films enable designing optimized cavities for efficient colour generation with a thickness almost 3 times smaller than what was previously achieved for continuous films.

physics.optics↗

arXiv2025

10-nm silicon nanostructures for phase-change UV-readable optical data storage

Achieving state-of-the-art optical data storage requires raising device capacity well above commercial standards. This requires media structured at a much smaller scale and enabling readout at a shorter wavelength. Current CDs, DVDs and Blu-rays are read with visible light, and are based on metallic reflection gratings and phase-change recording layers structured at the few-hundred-nm scale. Herein, we introduce 10-nm structured silicon as a promising UV-readable data storage platform. Recording on it harnesses the amorphous-to-crystalline phase-change of silicon, the two phases presenting well-constrasted UV optical properties. Furthermore, the phase-change contrast is strongly enhanced in the Vacuum UV thanks to the distinct interband plasmon resonances of the amorphous and crystalline nanostructures, which have an epsilon-near-zero and surface plasmonic character, respectively. Silicon nanogratings with a 10 nm width and a 20 nm period resonate near the wavelength of 120 nm, at which phase-change induces a 600% maximum optical transmittance contrast. This paves the way toward UV-readable data storage platforms with a 10 to 100 times increased data density, which could be implemented by harnessing the well-established silicon nanotechnology.

physics.optics↗

arXiv2025

Ultraviolet interband plasmonics down to the vacuum UV with ultrathin amorphous silicon nanostructures

Silicon dominates electronics, optoelectronics, photovoltaics and photonics thanks to its suitable properties, abundance, and well-developed cost-effective manufacturing processes. Recently, crystalline silicon has been demonstrated to be an appealing alternative plasmonic material, both for the infrared where free-carrier plasmons are enabled by heavy doping, and for the ultraviolet where plasmonic effects are induced by interband transitions. Herein, we demonstrate that nanostructured amorphous silicon exhibits such so-called interband plasmonic properties in the ultraviolet, as opposed to the expectation that they would only arise in crystalline materials. We report optical plasmon resonances in the 100-to-300 nm wavelength range in ultrathin nanostructures. These resonances shift spectrally with the nanostructure shape and the nature of the surrounding matrix, while their field enhancement properties turn from epsilon-near-zero plasmonic to surface plasmonic. We present a vacuum ultraviolet wavelength- and polarization-selective ultrathin film absorber design based on deeply-subwavelength anisotropically-shaped nanostructures. These findings reveal amorphous silicon as a promising material platform for ultracompact and room-temperature-processed ultraviolet plasmonic devices operating down to vacuum ultraviolet wavelengths, for applications including anticounterfeiting, data encryption and storage, sensing and detection. Furthermore, these findings raise a fundamental question on how plasmonics can be based on amorphous nanostructures.

physics.optics↗

arXiv2020

Tuning the period of femtosecond laser induced surface structures in steel: from angled incidence to quill writing

Exposure of metal surfaces to multiple ultrashort laser pulses under certain conditions leads to the formation of well-defined periodic surface structures. We show how the period of such structures in steel can be tuned over a wide range by controlling the complex interaction mechanisms triggered in the material. Amongst the different irradiation parameters that influence the properties of the induced structures, the angle of incidence of the laser beam occupies a prominent role. We present an experimental and theoretical investigation of this angle dependence in steel upon irradiation with laser pulses of 120 fs duration and 800 nm wavelength, while moving the sample at constant speed. Our findings can be grouped into two blocks. First, we observe the spatial coexistence of two different ripple periods at the steel surface, both featuring inverse scaling upon angle increase, which are related to forward and backward propagation of surface plasmon polaritons. To understand the underlying physical phenomena, we extend a recently developed model that takes into account quantitative properties of the surface roughness to the case of absorbing metals (large imaginary part of the dielectric function), and obtain an excellent match with the experimentally observed angle dependence. As second important finding, we observe a quill writing effect, also termed non-reciprocal writing, in form of a significant change of the ripple period upon reversing the sample movement direction. This remarkable phenomenon has been observed so far only inside dielectric materials and our work underlines its importance also in laser surface processing. We attribute the origin of symmetry breaking to the non-symmetric micro- and nanoscale roughness induced upon static multiple pulse irradiation, leading to non-symmetric modification of the wavevector of the coupled surface plasmon polariton.

physics.app-ph↗

arXiv2017

Effects of Dielectric Stoichiometry on the Photoluminescence Properties of Encapsulated WSe2 Monolayers

Two-dimensional transition-metal-dichalcogenide semiconductors have emerged as promising candidates for optoelectronic devices with unprecedented properties and ultra-compact performances. However atomically thin materials are highly sensitive to surrounding dielectric media, which imposes severe limitations to their practical applicability. Hence for their suitable integration into devices, the development of reliable encapsulation procedures that preserve their physical properties are required. Here, the excitonic photoluminescence of WSe2 monolayer flakes is assessed, at room temperature and 10 K, on mechanically exfoliated flakes encapsulated with SiOx and AlxOy layers employing chemical and physical deposition techniques. Conformal flakes coating on untreated - non-functionalized - flakes is successfully demonstrated by all the techniques except for atomic layer deposition, where a cluster-like oxide coating is observed. No significant compositional or strain state changes in the flakes are detected upon encapsulation by any of the techniques. Remarkably, our results evidence that the flakes' optical emission is strongly influenced by the quality of the encapsulating oxide - stoichiometry -. When the encapsulation is carried out with slightly sub-stoichiometric oxides two remarkable phenomena are observed. First, there is a clear electrical doping of the monolayers that is revealed through a dominant trion - charged exciton - room-temperature photoluminescence. Second, a strong decrease of the monolayers optical emission is measured attributed to non-radiative recombination processes and/or carriers transfer from the flake to the oxide. Power- and temperature-dependent photoluminescence measurements further confirm that stoichiometric oxides obtained by physical deposition lead to a successful encapsulation.

cond-mat.mes-hall↗