arXiv subjects

Roselle Ngaloy

Publications and source records attributed to Roselle Ngaloy.

6 recordsLinked to original sources

arXiv2026

Nanoelectronics with Two Dimensional Magnets

Two dimensional (2D) magnets have emerged as a compelling platform for spin based nanoelectronics, enabling atomic scale control of magnetic order, interfaces, quantum geometry, and symmetry. Here, we highlight recent advances in 2D ferromagnets, antiferromagnets, altermagnets, and related magnetic phases, emphasizing how enhanced Curie temperatures, perpendicular magnetic anisotropy, and unconventional magnetic orders translate into device relevant functionality. Spin dependent transport in vertical magnetic tunnel junctions and lateral spin valves based on 2D heterostructures are discussed, where atomically sharp interfaces enable highly tunable spin injection, propagation, and detection. We further focused on field free energy efficient spin orbit torque magnetization switching in 2D magnetic heterostructures, in which unconventional spin currents originate from an adjacent low symmetry spin orbit layer. Microscopic mechanisms involving symmetry breaking, Berry curvature, and orbital angular momentum transport are discussed, along with key challenges, including switching determinism and torque efficiency. Materials and device design strategies targeting neuromorphic, hybrid quantum spintronic, and multifunctional architectures are outlined. Collectively, these developments position 2D magnets as a promising candidate for tunable, energy efficient integrated spintronic technologies that can harness intertwined spin, charge, orbital, and topological degrees of freedom at the nanoscale.

cond-mat.mes-hall↗

arXiv2025

Spin-Texture Spin-valve with a van der Waals Magnet

All-electrical methods for nucleating, detecting, and manipulating spin textures in two-dimensional (2D) van der Waals (vdW) magnets can serve as fundamental building blocks for multi-state spintronic memory, logic, and neuromorphic computing applications. Unlike conventional ferromagnets, vdW ferromagnets such as Fe5GeTe2 with strong Dzyaloshinskii-Moriya interactions stabilize nanoscale chiral spin textures, including skyrmions and stripe domains. However, the sub-100 nm size of these spin textures has limited their study to sophisticated microscopy techniques. Here, we demonstrate all-electrical detection of spin textures in vdW itinerant ferromagnet Fe5GeTe2 using pure spin transport in a lateral graphene spin-valve device at room temperature. By engineering nanoscale constrictions or notches in Fe5GeTe2, we create spin textures that inject distinct spin polarizations into the graphene channel, where they are nonlocally sensed by a reference conventional ferromagnetic detector at room temperature. This enables the observation of anomalous multi-level spin-valve switching and Hanle spin precession signals, which are due to unique spin textures in Fe5GeTe2 and in sharp contrast to single-domains and conventional magnet-based devices. This all-electrical approach can provide direct access to the spin textures on an integrated 2D spintronic circuit without the need for ex-situ microscopic characterizations.

cond-mat.mes-hall↗

arXiv2025

Energy-efficient field-free unconventional spin-orbit torque magnetization switching dynamics in van der Waals heterostructures

Van der Waals (vdW) heterostructure of two-dimensional (2D) quantum materials offers a promising platform for efficient control of magnetization dynamics for non-volatile spin-based devices. However, energy-efficient field-free spin-orbit torque (SOT) switching and spin dynamics experiments to understand the basic SOT phenomena in all-2D vdW heterostructures are so far lacking. Here, we demonstrate energy-efficient field-free spin-orbit torque (SOT) switching and tunable magnetization dynamics in a vdW heterostructure comprising out-of-plane magnet Fe3GaTe2 and topological Weyl semimetal TaIrTe4. We measured the non-linear second harmonic Hall signal in TaIrTe4 /Fe3GaTe2 devices to evaluate the SOT-induced magnetization dynamics, which is characterized by a large and tunable out-of-plane damping-like torque. Energy-efficient and deterministic field-free SOT magnetization switching is achieved at room temperature with a very low current density. First-principles calculations unveil the origin of the unconventional charge-spin conversion phenomena, considering the crystal symmetry and electronic structure of TaIrTe4. These results establish that all-vdW heterostructures provide a promising route to energy-efficient, field-free, and tunable SOT-based spintronic devices.

cond-mat.mes-hall↗

arXiv2024

Coexistence of non-trivial van der Waals magnetic orders enable field-free spin-orbit torque switching at room temperature

The discovery of van der Waals (vdW) magnetic materials exhibiting non-trivial and tunable magnetic interactions can give rise to exotic magnetic states, which are not readily attainable with conventional materials. Such vdW magnets can provide a unique platform for studying new magnetic phenomena and realizing magnetization dynamics for energy-efficient and non-volatile spintronic memory and computing technologies. Here, we discover the coexistence of ferromagnetic and antiferromagnetic orders in vdW magnet (Co0.5Fe0.5)5-xGeTe2 (CFGT) CFGT above room temperature, inducing an intrinsic exchange bias and canted perpendicular magnetism. Such non-trivial intrinsic magnetic order enables us to realize energy-efficient, magnetic field-free, and deterministic spin-orbit torque (SOT) switching of CFGT in heterostructure with Pt. The devices show a very large spin Hall conductivity, a low critical current density, and yield a large SOT effective field. These experiments, together with density functional theory and Monte Carlo simulations establish coexisting non-trivial magnetic orders in CFGT that enable field-free SOT magnetization dynamics in spintronic devices.

cond-mat.mes-hall↗

arXiv2023

Strong in-plane magnetic anisotropy (Co0.15Fe0.85)5GeTe2/graphene van der Waals heterostructure spin-valve at room temperature

Van der Waals (vdW) magnets are promising owing to their tunable magnetic properties with doping or alloy composition, where the strength of magnetic interactions, their symmetry, and magnetic anisotropy can be tuned according to the desired application. However, most of the vdW magnet based spintronic devices are so far limited to cryogenic temperatures with magnetic anisotropies favouring out-of-plane or canted orientation of the magnetization. Here, we report room-temperature lateral spin-valve devices with strong in-plane magnetic anisotropy of the vdW ferromagnet (Co0.15Fe0.85)5GeTe2 (CFGT) in heterostructures with graphene. Magnetization measurements reveal above room-temperature ferromagnetism in CFGT with a strong in-plane magnetic anisotropy. Density functional theory calculations show that the magnitude of the anisotropy depends on the Co concentration and is caused by the substitution of Co in the outermost Fe layer. Heterostructures consisting of CFGT nanolayers and graphene were used to experimentally realize basic building blocks for spin valve devices such as efficient spin injection and detection. The spin transport and Hanle spin precession measurements prove a strong in-plane and negative spin polarization at the interface with graphene, which is supported by the calculated spin-polarized density of states of CFGT. The in-plane magnetization of CFGT at room temperature proves its usefulness in graphene lateral spin-valve devices, thus opening further opportunities for spintronic technologies.

cond-mat.mes-hall↗

arXiv2021

Van der Waals Magnet based Spin-Valve Devices at Room Temperature

The discovery of van der Waals (vdW) magnets opened up a new paradigm for condensed matter physics and spintronic technologies. However, the operations of active spintronic devices with vdW magnets are so far limited to cryogenic temperatures, inhibiting its broader practical applications. Here, for the first time, we demonstrate room temperature spin-valve devices using vdW itinerant ferromagnet Fe5GeTe2 in heterostructures with graphene. The tunnel spin polarization of the Fe5GeTe2/graphene vdW interface is detected to be significantly large ~ 45 % and negative at room temperature. Lateral spin-valve device design enables electrical control of spin signal and realization of basic building blocks for device application such as efficient spin injection, transport, precession, and detection functionalities. Furthermore, measurements with different magnetic orientations provide unique insights into the magnetic anisotropy of Fe5GeTe2 and its relation with spin polarization and dynamics in the heterostructure. These findings open opportunities for the applications of vdW magnet-based all-2D spintronic devices and integrated spin circuits at ambient temperatures.

cond-mat.mes-hall↗