Molecular Beam Epitaxy of Al$\mathrm{_{1-x}}$Sc$\mathrm{_{x}}$N Nanowires: Towards Group-III Nitride Piezoelectric Nanogenerators with Enhanced Response
We study the molecular beam epitaxy of self-assembled Al$\mathrm{_{1-x}}$Sc$\mathrm{_{x}}$N nanowires on conductive TiN layers and demonstrate their application in piezoelectric nanogenerators. Wurtzite Al$\mathrm{_{1-x}}$Sc$\mathrm{_{x}}$N nanowires with uniform Sc incorporation are grown across a wide composition range (0<x<0.35). At substrate temperatures below 700 $^\circ{}$C, these nanowires exhibit an inversely tapered morphology, whereas higher temperatures favor the nucleation of additional branches due to a phase separation of Al$\mathrm{_{1-x}}$Sc$\mathrm{_{x}}$N into wurtzite AlN and rock-salt ScN. Phase-pure Al$\mathrm{_{1-x}}$Sc$\mathrm{_{x}}$N nanowires are integrated into vertical nanogenerators, where the metallic TiN substrate serves as bottom electrode. The fabricated polymer-nanowire composite devices achieve effective piezoelectric charge coefficients of up to 8.5 pC N$^{-1}$ at x=0.32, thus exceeding the piezoelectric response of bulk AlN by nearly a factor of two. Although the charge response remains lower compared to Al$\mathrm{_{1-x}}$Sc$\mathrm{_{x}}$N thin films, the reduced effective dielectric permittivity of the nanowire-polymer composites compensates the reduction in piezoelectric charge coefficient, eventually yielding a higher voltage response and comparable energy harvesting efficiency. Finally, effective medium modeling reveals that the device architecture is the primary factor limiting performance, providing general design principles for highly efficient nanowire-based piezoelectric energy harvesters.