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Rui-Qi Wang

Publications and source records attributed to Rui-Qi Wang.

4 recordsLinked to original sources

Fine-Grained Post-Training Quantization for Large Vision Language Models with Quantization-Aware Integrated Gradients

Large Vision Language Models (LVLMs) have achieved remarkable success in a range of downstream tasks that require multimodal interaction, but their capabilities come with substantial computational and memory overhead, which hinders practical deployment. Among numerous acceleration techniques, post-training quantization is a popular and effective strategy for reducing memory cost and accelerating inference. However, existing LVLM quantization methods typically measure token sensitivity at the modality level, which fails to capture the complex cross-token interactions and falls short in quantitatively measuring the quantization error at the token level. As tokens interact within the model, the distinction between modalities gradually diminishes, suggesting the need for fine-grained calibration. Inspired by axiomatic attribution in mechanistic interpretability, we introduce a fine-grained quantization strategy on Quantization-aware Integrated Gradients (QIG), which leverages integrated gradients to quantitatively evaluate token sensitivity and push the granularity from modality level to token level, reflecting both inter-modality and intra-modality dynamics. Extensive experiments on multiple LVLMs under both W4A8 and W3A16 settings show that our method improves accuracy across models and benchmarks with negligible latency overhead. For example, under 3-bit weight-only quantization, our method improves the average accuracy of LLaVA-onevision-7B by 1.60%, reducing the gap to its full-precision counterpart to only 1.33%. The code is available at https://github.com/ucas-xiang/QIG.

cs.CV

Control of magnetic transition, metal-semiconductor transition, and magnetic anisotropy in noncentrosymmetric monolayer Cr$_2$Ge$_2$Se$_3$Te$_3$

Recent advances in two-dimensional materials have greatly expanded the family of ferromagnetic materials. The well-known 2D ferromagnets, such as CrI$_3$, Cr$_2$Ge$_2$Te$_6$, and Fe$_3$GeTe$_2$ monolayers, are characterized by centrosymmetric crystal structures. In contrast, ferromagnetic ordering in 2D noncentrosymmetric materials remains an underexplored area. Here we report a Janus ferromagnet, Cr$_2$Ge$_2$Se$_3$Te$_3$ with inversion symmetry breaking, through first-principles calculations. This monolayer can undergo a ferromagnetic-antiferromagnetic transformation and a metal-semiconductor transition under different strains. Additionally, the strength of magnetocrystalline anisotropy energy (MAE) can be modulated by electric field or strain. In particular, the magnetization easy axis can be altered from in-plane to out-of-plane under strain. We find that Te$_3$ atoms play a key role in determining the MAE, where contributions are primarily from $p_z / p_y$ and $p_x / p_y$ orbitals. This study of Janus ferromagnetic materials has provided a promising platform for the research on the control of magnetism by strain or electric field.

cond-mat.mtrl-sci

Manipulation of magnetic anisotropy of 2D magnetized graphene by ferroelectric In$_2$Se$_3$

The capacity to externally manipulate magnetic properties is highly desired from both fundamental and technological perspectives, particularly in the development of magnetoelectronics and spintronics devices. Here, using first-principles calculations, we have demonstrated the ability of controlling the magnetism of magnetized graphene monolayers by interfacing them with a two-dimensional ferroelectric material. When the 3$d$ transition metal (TM) is adsorbed on the graphene monolayer, its magnetization easy axis can be flipped from in-plane to out-of-plane by the ferroelectric polarization reversal of In$_2$Se$_3$, and the magnetocrystalline anisotropy energy (MAE) can be high to -0.692 meV/atom when adopting the Fe atom at bridge site with downward polarization. This may be a universal method since the 3$d$ TM-adsorbed graphene has a very small MAE, which can be easily manipulated by the ferroelectric polarization. As a result, the inherent mechanism is analyzed by second variation method.

cond-mat.mtrl-sci

First-principles design of ferromagnetic monolayer MnO$_2$ at the complex interface

Rapidly increasing interest in low-dimensional materials is driven by the emerging requirement to develop nanoscale solid-state devices with novel functional properties that are not available in three-dimensional bulk phases. Among the well-known low-dimensional systems, complex transition metal oxide interface holds promise for broad applications in electronic and spintronics devices. Herein, intriguing metal-insulator and ferromagnetic-antiferromagnetic transitions are achieved in monolayer MnO$_2$ that is sandwiched into SrTiO$_3$-based heterointerface systems through interface engineering. By using first-principles calculations, we modeled three types of SrTiO$_3$-based heterointerface systems with different interface terminations and performed a comparative study on the spin-dependent magnetic and electronic properties that are established in the confined MnO$_2$ monolayer. First-principles study predicts that metal-insulator transition and magnetic transition in the monolayer MnO$_2$ are independent on the thickness of capping layers. Moreover, 100$\%$ spin-polarized two-dimensional electron gases accompanied by robust room temperature magnetism are uncovered in the monolayer MnO$_2$. Not only is the buried MnO$_2$ monolayer a new interface phase of fundamental physical interest, but it is also a promising candidate material for nanoscale spintronics applications. Our study suggests interface engineering at complex oxide interfaces is an alternative approach to designing high-performance two-dimensional materials.

cond-mat.mtrl-sci