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Ruie Lu

Publications and source records attributed to Ruie Lu.

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Single crystal synthesis and low-lying electronic structure of V$_3$S$_4$

We report successful growth of millimeter-sized high quality single crystals of V$_3$S$_4$, a candidate topological semimetal belonging to a low-symmetry space group and consisting of only low atomic number elements. Using density functional theory calculations and angle-resolved photoemission spectroscopy, we show that the nonmagnetic phase of monoclinic V$_3$S$_4$ hosts type-II Dirac-like quasiparticles which opens a sizable gap due to spin orbit coupling, as well as theoretical multiple nodal lines that are eliminated also by spin orbit coupling. These results suggest that relativistic effects give rise to profound modifications of the topological properties even in compounds with low-weight elements.

cond-mat.mtrl-sci

Multiple Symmetry-Protected Dirac Nodal Lines in A Quasi-One-Dimensional Semimetal

Nodal-line semimetals (NLSMs) contains Dirac/Weyl type band-crossing nodes extending into shapes of line, loop and chain in the reciprocal space, leading to novel band topology and transport responses. Robust NLSMs against spin-orbit coupling typically occur in three-dimensional materials with more symmetry operations to protect the line nodes of band crossing, while the possibilities in lower-dimensional materials are rarely discussed. Here we demonstrate robust NLSM phase in a quasi-one-dimensional nonmagnetic semimetal TaNiTe5. Combining angle-resolved photoemission spectroscopy measurements and first-principles calculations, we reveal how reduced dimension can interact with nonsymmorphic symmetry and result into multiple Dirac-type nodal lines with four-fold degeneracy. Our findings suggest rich physics and application in (quasi-)one-dimensional topological materials and call for further investigation on the interplay between the quantum confinement and nontrivial band topology.

cond-mat.other

Pressure-tuned intralayer exchange in superlattice-like MnBi2Te4/(Bi2Te3)n topological insulators

The magnetic structures of MnBi2Te4(Bi2Te3)n can be manipulated by tuning the interlayer coupling via the number of Bi2Te3 spacer layers n, while the intralayer ferromagnetic (FM) exchange coupling is considered too robust to control. By applying hydrostatic pressure up to 3.5 GPa, we discover opposite responses of magnetic properties for n = 1 and 2. MnBi4Te7 stays at A-type antiferromagnetic (AFM) phase with a decreasing N\'eel temperature and an increasing saturation field. In sharp contrast, MnBi6Te10 experiences a phase transition from A-type AFM to a quasi-two-dimensional FM state with a suppressed saturation field under pressure. First-principles calculations reveal the essential role of intralayer exchange coupling from lattice compression in determining these magnetic properties. Such magnetic phase transition is also observed in 20% Sb-doped MnBi6Te10 due to the in-plane lattice compression.

cond-mat.mtrl-sci

Half-Magnetic Topological Insulator

Topological magnets are a new family of quantum materials providing great potential to realize emergent phenomena, such as quantum anomalous Hall effect and axion-insulator state. Here we present our discovery that stoichiometric ferromagnet MnBi8Te13 with natural heterostructure MnBi2Te4-(Bi2Te3)3 is an unprecedented half-magnetic topological insulator, with the magnetization existing at the MnBi2Te4 surface but not at the opposite surface terminated by triple Bi2Te3 layers. Our angle-resolved photoemission spectroscopy measurements unveil a massive Dirac gap at the MnBi2Te4 surface, and gapless Dirac cone on the other side. Remarkably, the Dirac gap (~28 meV) at MnBi2Te4 surface decreases monotonically with increasing temperature and closes right at the Curie temperature, thereby representing the first smoking-gun spectroscopic evidence of magnetization-induced topological surface gap among all known magnetic topological materials. We further demonstrate theoretically that the half-magnetic topological insulator is desirable to realize the half-quantized surface anomalous Hall effect, which serves as a direct proof of the general concept of axion electrodynamics in condensed matter systems.

cond-mat.mtrl-sci