arXiv subjects

Ruiqing Wang

Publications and source records attributed to Ruiqing Wang.

5 recordsLinked to original sources

arXiv2026

MFSR: MeanFlow Distillation for One Step Real-World Image Super Resolution

Diffusion- and flow-based models have advanced Real-world Image Super-Resolution (Real-ISR), but their multi-step sampling makes inference slow and hard to deploy. One-step distillation alleviates the cost, yet often degrades restoration quality and removes the option to refine with more steps. We present Mean Flows for Super-Resolution (MFSR), a new distillation framework that produces photorealistic results in a single step while still allowing an optional few-step path for further improvement. Our approach uses MeanFlow as the learning target, enabling the student to approximate the average velocity between arbitrary states of the Probability Flow ODE (PF-ODE) and effectively capture the teacher's dynamics without explicit rollouts. To better leverage pretrained generative priors, we additionally improve original MeanFlow's Classifier-Free Guidance (CFG) formulation with teacher CFG distillation strategy, which enhances restoration capability and preserves fine details. Experiments on both synthetic and real-world benchmarks demonstrate that MFSR achieves efficient, flexible, and high-quality super-resolution, delivering results on par with or even better than multi-step teachers while requiring much lower computational cost.

cs.CV↗

arXiv2025

Wurtzite AlScN/AlN Superlattice Ferroelectrics Enable Endurance Beyond 1010 Cycles

Wurtzite ferroelectrics are rapidly emerging as a promising material class for next-generation non-volatile memory technologies, owing to their large remanent polarization, intrinsically ordered three-dimensional crystal structure, and full compatibility with CMOS processes and back-end-of-line (BEOL) integration. However, their practical implementation remains critically constrained by a severe endurance bottleneck: under conditions where the remanent polarization (2Pr) reaches or exceeds 200 uC/cm^2, devices typically undergo catastrophic failure before reaching 10^8 cycles. Here, we report a vacancy-confining superlattice strategy that addresses this limitation, achieving reliable ferroelectric switching beyond 10^10 cycles while preserving saturated polarization (2Pr >= 200 uC/cm^2). This is achieved by embedding periodic ultrathin AlN layers within AlScN films, forming wurtzite AlScN/AlN superlattices, in conjunction with a dynamic recovery protocol that actively stabilizes the defect landscape throughout repeated cycling. Atomic-resolution imaging and EELS spectrum imaging technique, supported by first-principles calculations, reveal a self-regulated defect topology in which nitrogen vacancies are spatially confined by heterostructure energy barriers and dynamically re-trapped into energetically favorable lattice sites. This dual spatial-energetic confinement mechanism effectively inhibits both long-range percolative migration and local defect clustering, enabling such an ultrahigh endurance exceeding 10^10 cycles and limiting polarization degradation to below 3% after 10^9 cycles. These findings establish nitrogen vacancy topology stabilization as a foundational design principle for reliable operation of wurtzite ferroelectrics, providing a scalable and CMOS-compatible platform for future high-endurance ferroelectric memory technologies.

cond-mat.mtrl-sci↗

arXiv2025

Cryogenic Ferroelectric Behavior of Wurtzite Ferroelectrics

This study presents the first experimental exploration into cryogenic ferroelectric behavior in wurtzite ferroelectrics. A breakdown field (EBD) to coercive field (EC) ratio of 1.8 is achieved even at 4 K, marking the lowest ferroelectric switching temperature reported for wurtzite ferroelectrics. Additionally, a significant evolution in fatigue behavior is captured, transitioning from hard breakdown to ferroelectricity loss at cryogenic temperatures. These findings unlock the feasibility for wurtzite ferroelectrics to advance wide temperature non-volatile memory.

cond-mat.mtrl-sci↗

arXiv2024

OFTSR: One-Step Flow for Image Super-Resolution with Tunable Fidelity-Realism Trade-offs

Recent advances in diffusion and flow-based generative models have demonstrated remarkable success in image restoration tasks, achieving superior perceptual quality compared to traditional deep learning approaches. However, these methods either require numerous sampling steps to generate high-quality images, resulting in significant computational overhead, or rely on common model distillation, which usually imposes a fixed fidelity-realism trade-off and thus lacks flexibility. In this paper, we introduce OFTSR, a novel flow-based framework for one-step image super-resolution that can produce outputs with tunable levels of fidelity and realism. Our approach first trains a conditional flow-based super-resolution model to serve as a teacher model. We then distill this teacher model by applying a specialized constraint. Specifically, we force the predictions from our one-step student model for same input to lie on the same sampling ODE trajectory of the teacher model. This alignment ensures that the student model's single-step predictions from initial states match the teacher's predictions from a closer intermediate state. Through extensive experiments on datasets including FFHQ (256$\times$256), DIV2K, and ImageNet (256$\times$256), we demonstrate that OFTSR achieves state-of-the-art performance for one-step image super-resolution, while having the ability to flexibly tune the fidelity-realism trade-off. Codes: \href{https://github.com/yuanzhi-zhu/OFTSR}{https://github.com/yuanzhi-zhu/OFTSR}.

cs.CV↗

arXiv2024

Microscopic Insights into Fatigue Mechanism in Wurtzite Ferroelectric Al$_{0.65}$Sc$_{0.35}$N: Oxygen Infiltration Enabled Grain Amorphization Spanning Boundary to Bulk

For the first time, the fatigue behavior involving external oxygen in highly Sc-doped AlN ferroelectric film was observed using transmission electron microscope techniques. Despite increasing the Sc composition in AlScN film contributes to reducing the device operation voltage, the inherent affinity of Sc for oxygen introduces instability in device performance. In this study, oxygen incorporation at top electrode edges and grain boundaries accompanied with an increase in current leakage and the disappearance of ferroelectric properties, was observed in nanoscale after long-term field cycling. This observation indicates the emergence of non-ferroelectric and even amorphous states. This presented work revealed solid experimental evidence of an oxygen-involved fatigue mechanism, providing valuable insights into the physical nature of the ferroelectric properties of AlScN films.

cond-mat.mtrl-sci↗