SearcharxivSearch

arXiv subjects

Ruishi Qi

Publications and source records attributed to Ruishi Qi.

At least 19 recordsLinked to original sources

Optical Voltage Profiling of 2D Semiconductors via Proximal Exciton Sensing

High contact resistances in atomically thin semiconductors often mask intrinsic electrical transport properties, particularly at low carrier densities where exotic correlated states emerge. We introduce optical voltage profiling, a noninvasive wide-field technique that replaces local voltage probes with a proximal monolayer MoSe$_2$ exciton sensor. Isolated by thin hexagonal boron nitride, this sensor converts the target's local electrostatic potential into spatially resolved modulations of exciton reflectance. Through pixel-wise in situ calibration, these signals yield quantitative two-dimensional voltage maps of an actively biased semiconductor device. Using this method, we demonstrate the carrier-density-driven metal-insulator transition in bilayer MoSe$_2$ and obtain channel resistances below 1 k$Ω$ despite M$Ω$-scale two-terminal resistances in the metallic region. The optically derived resistance exhibits a metal-insulator crossover near the resistance quantum $h/e^2$, and the voltage maps and reconstructed local conductivity reveal pronounced spatial heterogeneity in both insulating and metallic regimes. Beyond resolving channel resistance under high contact-resistance conditions, the technique provides spatially resolved access to microscopic transport heterogeneity in functional van der Waals devices.

cond-mat.mes-hall

Terahertz electrodynamics in a zero-field Wigner crystal

In clean two-dimensional (2D) systems, electrons are expected to self-organize into a regular lattice, a Wigner crystal, when their mutual Coulomb repulsion overwhelms kinetic energy. Understanding the Wigner crystal at zero magnetic field is a long-sought goal in physics, thanks to its fundamental simplicity and possible connection to the density-driven metal-insulator transition. To date, evidence for such a crystal has been reported across various platforms. However, the AC conductivity of a zero-field Wigner crystal, a key observable characterizing its electrodynamics, has never been measured. Here, we develop an ultrasensitive on-chip terahertz (THz) spectroscopy technique to probe the AC conductivity in electrostatically gated monolayer MoSe2 encapsulated in hexagonal boron nitride. We observe a sub-THz resonance corresponding to the pinning mode of a zero-field Wigner crystal, whose frequency is orders of magnitude higher than those under high magnetic fields. Using the pinning mode as an indicator, we reveal that moderate disorder notably stabilizes the Wigner crystal. With increasing density towards melting, we find that the pinning mode of the Wigner crystal coexists with a growing Drude component characteristic of an electron liquid, and the competition between these two components in the conductivity spectra leads to the insulator-metal transition of the 2D electron system. Our findings not only elucidate the low-energy electrodynamics of a zero-field Wigner crystal, but also establish on-chip THz spectroscopy as a powerful probe for correlated quantum phases in two-dimensional materials.

cond-mat.mes-hall

Contactless cavity sensing of superfluid stiffness in atomically thin 4Hb-TaS$_2$

The exceptional tunability of two-dimensional van der Waals materials offers unique opportunities for exploring novel superconducting phases. However, in such systems, the measurement of superfluid phase stiffness, a fundamental property of a superconductor, is challenging because of the mesoscopic sample size. Here, we introduce a contact-free technique for probing the electrodynamic response, and thereby the phase stiffness, of atomically thin superconductors using on-chip superconducting microwave resonators. We demonstrate this technique on 4Hb-TaS$_2$, a van der Waals superconductor whose gap structure under broken mirror symmetry is under debate. In our cleanest few-layer device, we observe a superconducting critical temperature comparable to that of the bulk. The temperature evolution of the phase stiffness features nodeless behavior in the presence of broken mirror symmetry, inconsistent with the scenario of nodal surface superconductivity. With minimal fabrication requirements, our technique enables microwave measurements across wide ranges of two-dimensional superconductors.

cond-mat.supr-con

Tunable Interlayer Charge-transfer States in MoSe$_2$/WS$_2$ Moiré Superlattices

Moiré superlattices formed by transition metal dichalcogenide (TMD) heterobilayers provide a versatile platform for studying strongly correlated electronic, excitonic, and topological phenomena in solids. In particular, angle-aligned MoSe$_2$/WS$_2$ heterobilayers, which have a Type-I band alignment at zero vertical electric field, host rich correlated spin and charge physics. Here, combining large-scale first-principles calculations and optical reflection spectroscopy, we report a thorough study of the emergent moiré excitonic states and interlayer charge-transfer states in angle-aligned electron-doped MoSe$_2$/WS$_2$ moiré superlattices. The moiré excitonic states serve as sensitive optical probes to the localization profile of doped electrons. We observe a series of interlayer charge-transfer transitions from n/n$_0$ = 1 to 4 (where n$_0$ denotes the moiré density) when the vertical electric field switches the heterostructure band alignment from Type-I to Type-II. By tuning the vertical electric field, we can precisely control the interlayer electron localization, realizing a Fermi-Hubbard model with a tunable charge-transfer band on an effective honeycomb lattice. Furthermore, Monte Carlo simulation of the doping dependence of the electric-field susceptibility predicts that multiple correlated charge-ordered states appear at both integer and fractional fillings. Our results provide a holistic understanding of the emergent optical excitations and the correlated charge-transfer states in electron-doped MoSe$_2$/WS$_2$ moiré superlattices.

cond-mat.mes-hall

Electrically controlled Heat Assisted Magnetic Recording in Intercalated 2D Magnets

The ever-increasing demand for fast, reliable, and energy-efficient information storage continues to push magnetic memory technologies toward their fundamental limits. Conventional scaling strategies, which rely on reducing bit size, inevitably run into the "magnetic recording trilemma," where signal-to-noise ratio, thermal stability, and writability cannot all be optimized simultaneously. Heat-assisted magnetic recording (HAMR) has emerged as the leading solution, enabling high-density storage by transiently heating the medium during the write cycle. However, the reliance on laser optics and plasmonic transducers restricts HAMR primarily to hard-disk drives, limiting its integration with on-chip or embedded architectures. Here, we demonstrate an electronic variant of HAMR in which Joule heating from low-current density current pulses facilitates data writing, while the anomalous Hall effect provides electronic readout. Employing intercalated 2D magnet Ni$_{1/4}$TaSe$_2$, we show direct evidence that current pulses heat the material above its Curie temperature, during which a small magnetic field of ~2mT (100 times smaller than the coercive field) enables efficient data writing. The all-electronic approach combined with the 2D magnetic medium creates timely opportunities to revisit the energy-assisted magnetization recording, enabling new recording schemes that combine fundamental novelty with technological impact.

cond-mat.mes-hall

Observation of two-component exciton condensates in an excitonic insulator

Macroscopic quantum coherence emerges when bosons condense into a Bose-Einstein condensate (BEC). First observed as a single-component superfluid in helium, BECs later emerged in ultracold atomic gases at nanokelvin temperatures as weakly interacting quantum fluids, which can also host multicomponent spinor condensates with rich internal degrees of freedom. Excitons provide a promising solid-state platform for BECs that can combine strong interactions, electrical tunability, high transition temperatures, and multicomponent order. Yet, conclusive evidence for condensation has remained elusive. Here, we report evidence of two-component exciton BECs in MoSe2/hBN/WSe2 electron-hole bilayers by directly probing the spin susceptibility of constituent electrons and holes. This heterostructure hosts equilibrium exciton fluids with four spin-valley flavors. Using magneto-optical spectroscopy in a dilution refrigerator, we reveal three exciton condensate phases with distinct flavor polarizations. At zero magnetic field, the many-body ground state is a coherent superposition of two simultaneously condensed intravalley exciton flavors. Under a magnetic field, the intravalley exciton condensate first switches to a two-component intervalley exciton condensate via a first-order quantum phase transition at a weak critical field, and then turns into a fully-polarized single-component condensate at high fields. The two-component condensates persist up to ~1.8 K. Our results establish van der Waals electron-hole bilayers as a versatile platform for exploring strongly interacting, multicomponent exciton BECs.

cond-mat.mes-hall

Observation of an exciton crystal in a moiré excitonic insulator

Strong Coulomb interactions can drive electrons to crystallize into a Wigner lattice. Achieving the bosonic analogue - a crystal of excitons - has remained elusive due to their short lifetimes and weaker interactions. Here, we report the observation of a thermodynamically stable exciton crystal in an excitonic insulator coupled to a moiré potential. Using an electron-hole bilayer composed of a monolayer MoSe2 and a WS2/WSe2 moiré superlattice, we construct a tunable extended Bose-Hubbard model with electrical control over exciton and charge doping in thermal equilibrium. Optical spectroscopy reveals spontaneous crystallization of long-lived excitons at one exciton filling per three moiré sites, evidenced by strong Umklapp scattering peaks in the optical spectrum. Exciton transport measurements further show a pronounced exciton resistance peak at the same filling, consistent with suppressed exciton hopping in a crystalline phase. When doped away from net charge neutrality, this moiré electron-hole bilayer can host new correlated insulating phases where dipolar excitonic insulators form on top of the background of a hole Mott insulator or generalized Wigner crystals in the moiré superlattice. These findings establish moiré excitonic insulators as a versatile platform for realizing correlated crystalline phases of bosons and fermions.

cond-mat.mes-hall

Strongly confined Mid-infrared to Terahertz Phonon Polaritons in Ultra-thin SrTiO3

Phonon polaritons (PhPs) enable subwavelength light control for infrared sensing, imaging, and optoelectronics, but conventional polar materials have narrow Reststrahlen bands, limiting applications. Materials that support PhPs with broad spectral range, strong field confinement, slow group velocity, and high quality factor are therefore needed. Here, using monochromatic electron energy loss spectroscopy in a scanning transmission electron microscope, we demonstrate that ultra-thin SrTiO3 membranes possess the desired properties. Systematic measurements across varying thicknesses reveal two PhP branches with wide spectral dispersion, strong confinement, and anomalously slow group velocities spanning from the mid-infrared to terahertz range. Notably, in 3-nm-thick membranes, these polaritons exhibit unprecedented confinement factors exceeding 500 and group velocities as low as ~ 7 x 10-5c, rivaling the best-performing van der Waals materials. These findings establish perovskite oxide such as SrTiO3 as versatile platforms for tailoring light-matter interactions at the nanoscale, providing critical insights for the design of next-generation photonic devices requiring broadband operation and enhanced optical confinement.

physics.optics

Orbital dependent Coulomb drag in electron-hole bilayer graphene heterostructures

We report Coulomb drag studies in an electron-hole bilayer graphene heterostructure in a magnetic field, where the orbital, spin, and valley degrees of freedom are lifted by the combined effects of exchange interaction, Zeeman energy, and vertical displacement field. Our device enables the application of a large vertical displacement field in both layers. In addition to the well-established strong Coulomb drag between Landau levels with an orbital quantum number N = 0, we observe a Coulomb drag signal between the N = 1 Landau levels under a suitable vertical displacement field. As the displacement field increases further, the Coulomb drag signal between N = 1 Landau levels weakens, and a Coulomb drag signal emerges between the N = 0 and N = 1 Landau levels. These findings suggest the important roles of the orbital index and vertical displacement field in interlayer Coulomb interactions within the quantum Hall regime of coupled bilayer systems.

cond-mat.mes-hall

Single-dislocation phonons: atomic-scale measurement and their thermal properties

Nanoscale defects such as dislocations, have a significant impact on the phonon thermal transport properties in non-metallic materials. To unravel these effects, understanding of defect phonon modes is essential. Herein, at the atomic scale, the localized phonons of individual dislocation at a Si/Ge interface are measured via monochromated electron energy loss spectroscopy in a scanning transmission electron microscope. These modes are then correlated with the local microstructure, further revealing the dislocation effects on the local thermal transport properties. The dislocation causes phonon redshift in several milli-electron-volts within about two to four nanometers of the core, where both of the strain field and Ge-segregation play roles. With the presence of dislocation, the local interfacial thermal conductance can be either enhanced or reduced, depending on the complex interaction and competition between lattice-disorder (dislocation) and element-disorder (heterointerface mixing and Ge-segregation) at the interface. These findings provide valuable insights to improve the thermal properties of thermoelectric generators and thermal management systems through proper defect engineering.

cond-mat.mtrl-sci

Direct measurement of terahertz conductivity in a gated monolayer semiconductor

Two-dimensional semiconductors and their moiré superlattices have emerged as important platforms for investigating correlated electrons. However, many key properties of these systems, such as the frequency-dependent conductivity, remain experimentally inaccessible because of the mesoscopic sample size. Here we report a technique to directly measure the complex conductivity of electrostatically gated two-dimensional semiconductors in the terahertz frequency range. Applying this technique to a WSe2 monolayer encapsulated in hBN, we observe clear Drude-like response between 0.1 and 1 THz, in a density range challenging to access even in DC transport. Our work opens a new avenue for studying tunable van der Waals heterostructures using terahertz spectroscopy.

cond-mat.mes-hall

Competition between excitonic insulators and quantum Hall states in correlated electron-hole bilayers

Excitonic insulators represent a unique quantum phase of matter, providing a rich ground for studying exotic quantum bosonic states. Strongly coupled electron-hole bilayers, which host stable dipolar exciton fluids with an exciton density that can be adjusted electrostatically, offer an ideal platform to investigate correlated excitonic insulators. Based on electron-hole bilayers made of MoSe2/hBN/WSe2 heterostructures, here we study the behavior of excitonic insulators in a perpendicular magnetic field. We report the observation of excitonic quantum oscillations in both Coulomb drag signals and electrical resistance at low to medium magnetic fields. Under a strong magnetic field, we identify multiple quantum phase transitions between the excitonic insulator phase and the bilayer quantum Hall insulator phase. These findings underscore the interplay between the electron-hole interactions and Landau level quantization that opens new possibilities for exploring quantum phenomena in composite bosonic insulators.

cond-mat.mes-hall

Terahertz phonon engineering with van der Waals heterostructures

Phononic engineering at gigahertz (GHz) frequencies form the foundation of microwave acoustic filters, acousto-optic modulators, and quantum transducers. Terahertz (THz) phononic engineering could lead to acoustic filters and modulators at higher bandwidth and speed, as well as quantum circuits operating at higher temperatures. Despite its potential, methods for engineering THz phonons have been limited due to the challenges of achieving the required material control at sub-nanometer precision and efficient phonon coupling at THz frequencies. Here, we demonstrate efficient generation, detection, and manipulation of THz phonons through precise integration of atomically thin layers in van der Waals heterostructures. We employ few-layer graphene (FLG) as an ultrabroadband phonon transducer, converting femtosecond near-infrared pulses to acoustic phonon pulses with spectral content up to 3 THz. A monolayer WSe$_2$ is used as a sensor, where high-fidelity readout is enabled by the exciton-phonon coupling and strong light-matter interactions. Combining these capabilities in a single heterostructure and detecting responses to incident mechanical waves, we perform THz phononic spectroscopy. Using this platform, we demonstrate high-Q THz phononic cavities and show that a monolayer WSe$_2$ embedded in hexagonal boron nitride (hBN) can efficiently block the transmission of THz phonons. By comparing our measurements to a nanomechanical model, we obtain the force constants at the heterointerfaces. Our results could enable THz phononic metamaterials for ultrabroadband acoustic filters and modulators, and open novel routes for thermal engineering.

cond-mat.mes-hall

Low Resistance Ohmic Contact to P-type Monolayer WSe2

Advanced microelectronics in the future may require semiconducting channel materials beyond silicon. Two-dimensional (2D) semiconductors, characterized by their atomically thin thickness, hold immense promise for high-performance electronic devices at the nanometer scale with lower heat dissipation. One challenge for achieving high-performance 2D semiconductor field effect transistors (FET), especially for p-type materials, is the high electrical contact resistance present at the metal-semiconductor interface. In conventional bulk semiconductors, low resistance ohmic contact is realized through heavy substitutional doping with acceptor or donor impurities at the contact region. The strategy of substitutional doping, however, does not work for p-type 2D semiconductors such as monolayer tungsten diselenide (WSe$_2$).In this study, we developed highly efficient charge-transfer doping with WSe$_2$/$α$-RuCl$_3$ heterostructures to achieve low-resistance ohmic contact for p-type WSe$_2$ transistors. We show that a hole doping as high as 3$\times$10$^{13}$ cm$^{-2}$ can be achieved in the WSe$_2/α$-RuCl$_3$ heterostructure due to its type-III band alignment. It results in an Ohmic contact with resistance lower than 4 k Ohm $μ$m at the p-type monolayer WSe$_2$/metal junction. at room temperature. Using this low-resistance contact, we demonstrate high-performance p-type WSe$_2$ transistors with a saturation current of 35 $μ$A$\cdot$ $μ$m$^{-1}$ and an I$_{ON}$/I$_{OFF}$ ratio exceeding 10$^9$ It could enable future microelectronic devices based on 2D semiconductors and contribute to the extension of Moore's law.

cond-mat.mes-hall

Electrically controlled interlayer trion fluid in electron-hole bilayers

The combination of repulsive and attractive Coulomb interactions in a quantum electron(e)-hole(h) fluid can give rise to novel correlated phases of multiparticle charge complexes such as excitons, trions and biexcitons. Here we report the first experimental realization of an electrically controlled interlayer trion fluid in two-dimensional van der Waals heterostructures. We demonstrate that in the strong coupling regime of electron-hole bilayers, electrons and holes in separate layers can spontaneously form three-particle trion bound states that resemble positronium ions in high energy physics. The interlayer trions can assume 1e-2h and 2e-1h configurations, where electrons and holes are confined in different transition metal dichalcogenide layers. We show that the two correlated holes in 1e-2h trions form a spin-singlet state with a spin gap of ~1meV. By electrostatic gating, the equilibrium state of our system can be continuously tuned into an exciton fluid, a trion fluid, an exciton-trion mixture, a trion-charge mixture or an electron-hole plasma. Upon optical excitation, the system can host novel high-order multiparticle charge complexes including interlayer four-particle complex (tetrons) and five-particle complex (pentons). Our work demonstrates a unique platform to study novel correlated phases of tunable Bose-Fermi mixtures and opens up new opportunities to realize artificial ions/molecules in electronic devices.

cond-mat.mes-hall

Perfect Coulomb drag and exciton transport in an excitonic insulator

Strongly coupled two-dimensional electron-hole bilayers can give rise to novel quantum Bosonic states: electrons and holes in electrically isolated layers can pair into interlayer excitons, which can form a Bose-Einstein condensate below a critical temperature at zero magnetic field. This state is predicted to feature perfect Coulomb drag, where a current in one layer must be accompanied by an equal but opposite current in the other, and counterflow superconductivity, where the excitons form a superfluid with zero viscosity. Electron-hole bilayers in the strong coupling limit with an excitonic insulator ground state have been recently achieved in semiconducting transition metal dichalcogenide heterostructures, but direct electrical transport measurements remain challenging. Here we use a novel optical spectroscopy to probe the electrical transport of correlated electron-hole fluids in MoSe2/hBN/WSe2 heterostructures. We observe perfect Coulomb drag in the excitonic insulator phase up to a temperature as high as ~15K. Strongly correlated electron and hole transport is also observed at unbalanced electron and hole densities, although the Coulomb drag is not perfect anymore. Meanwhile, the counterflow resistance of interlayer excitons remains finite. These results indicate the formation of an exciton gas in the excitonic insulator which does not condensate into a superfluid at low temperature. Our work also demonstrates that dynamic optical spectroscopy provides a powerful tool for probing novel exciton transport behavior and possible exciton superfluidity in correlated quantum electron-hole fluids.

cond-mat.mes-hall

Atomic-scale observation of localized phonons at FeSe/SrTiO3 interface

In single unit-cell FeSe grown on SrTiO3, the superconductivity transition temperature features a significant enhancement. Local phonon modes at the interface associated with electron-phonon coupling may play an important role in the interface-induced enhancement. However, such phonon modes have eluded direct experimental observations. Indeed, the complicated atomic structure of the interface brings challenges to obtain the accurate structure-phonon relation knowledge from either experiment or theory, thus hindering our understanding of the enhancement mechanism. Here, we achieve direct characterizations of atomic structure and phonon modes at the FeSe/SrTiO3 interface with atomically resolved imaging and electron energy loss spectroscopy in a scanning transmission electron microscope. We find several phonon modes highly localized (~1.3 nm) at the unique double layer Ti-O termination at the interface, one of which (~ 83 meV) engages in strong interactions with the electrons in FeSe based on ab initio calculations. The electron-phonon coupling strength for such a localized interface phonon with short-range interactions is comparable to that of Fuchs-Kliewer (FK) phonon mode with long-rang interactions. Thus, our atomic-scale study provides new insights into understanding the origin of superconductivity enhancement at the FeSe/SrTiO3 interface.

cond-mat.supr-con

Thermodynamic behavior of correlated electron-hole fluids in van der Waals heterostructures

Coupled two-dimensional electron-hole bilayers provide a unique platform to study strongly correlated Bose-Fermi mixtures in condensed matter. Electrons and holes in spatially separated layers can bind to form interlayer excitons, composite Bosons expected to support high-temperature exciton superfluids. The interlayer excitons can also interact strongly with excess charge carriers when electron and hole densities are unequal. Here, we use optical spectroscopy to quantitatively probe the local thermodynamic properties of strongly correlated electron-hole fluids in MoSe2/hBN/WSe2 heterostructures. We observe a discontinuity in the electron and hole chemical potentials at matched electron and hole densities, a definitive signature of an excitonic insulator ground state. The excitonic insulator is stable up to a Mott density of ~$0.8\times {10}^{12} \mathrm{cm}^{-2}$ and has a thermal ionization temperature of ~70 K. The density dependence of the electron, hole, and exciton chemical potentials reveals strong correlation effects across the phase diagram. Compared with a non-interacting uniform charge distribution, the correlation effects lead to significant attractive exciton-exciton and exciton-charge interactions in the electron-hole fluid. Our work highlights the unique quantum behavior that can emerge in strongly correlated electron-hole systems.

cond-mat.str-el