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Ruizi Liu

Publications and source records attributed to Ruizi Liu.

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Spin-flop driven interfacial tunneling magnetoresistance in an antiferromagnetic tunnel junction

The utilization of two-dimensional (2D) materials in magnetic tunnel junctions (MTJs) has shown excellent performance and rich physics. As for 2D antiferromagnets, the magnetic moments in different layers respond asynchronously and can be configured at various states under different magnetic fields, showing the possibility of efficient magnetic and electrical tunability. In this report, A-type antiferromagnetic (AFM) material (Fe0.5Co0.5)5GeTe2 (FCGT) works as electrodes to realize full van der Waals magnetic tunnel junctions. Owing to the interfacial effect, the even-layer FCGT, although with zero net magnetization, exhibits spin selectivity in MTJ architecture contributing to a tunneling magnetoresistance (TMR) reaching about 25% at a low operating current 1 nA at 100 K and persists near room temperature. Due to the surface spin-flop (SSF) effect in antiferromagnetic FCGT, the alternation flexibility between the volatile and nonvolatile memory behavior is achieved. The interfacial TMR can be tuned efficiently in amplitude and even sign under different bias currents and temperatures. These findings show precise magnetoelectric manipulation in MTJs based on 2D antiferromagnets and highlight the promise of 2D antiferromagnets for spintronic devices.

cond-mat.mes-hall

Correlation-driven quantum geometry effects in a Kondo system

Quantum geometry, including quantum metric and Berry curvature, which describes the topology of electronic states, can induce fascinating physical properties. Symmetry-dependent nonlinear transport has emerged as a sensitive probe of these quantum geometric properties. However, its interplay with strong electronic correlations has rarely been explored in bulk materials, particularly in a Kondo lattice system. Here, we uncover correlation-driven quantum geometry in centrosymmetric antiferromagnetic iron telluride (FeTe). We experimentally observe the quantum metric quadrupole-induced third-order nonlinear transport, whose angular dependence reflects magnetic structure in FeTe. The nonlinear transport signals follow Kondo lattice crossover and vanish at high temperatures. Our theory suggests that a Kondo lattice formed at low temperatures explains the emergence of quantum geometry, which is induced by the opening of a hybridization gap near the Fermi energy. This discovery establishes a paradigm where quantum geometry arises not from static symmetry breaking but from dynamic many-body effects and provides a zero-field probe for sensing antiferromagnetic order.

cond-mat.str-el

Robust field-free switching using large unconventional spin-orbit torque in an all-van der Waals heterostructure

The emerging all-van der Waals (vdW) magnetic heterostructure provides a new platform to control the magnetization by the electric field beyond the traditional spintronics devices. One promising strategy is using unconventional spin-orbit torque (SOT) exerted by the out-of-plane polarized spin current to enable deterministic magnetization switching and enhance the switching efficiency. However, in all-vdW heterostructures, large unconventional SOT remains elusive and the robustness of the field-free switching against external magnetic field hasn't been examined, which hinder further applications. Here we demonstrate the field-free switching in an all-vdW heterostructure combining a type-II Weyl semimetal TaIrTe4 and above-room-temperature ferromagnet Fe3GaTe2. The fully field-free switching can be achieved at 2.56 x 10^10 A per m2 at 300K and a large SOT effective field efficiency of the out-of-plane polarized spin current generated by TaIrTe4 is determined to be 0.37. Moreover, we find that the switching polarity cannot be changed until the external in-plane magnetic field reaches 252mT, indicating a robust switching against the magnetic field. The numerical simulation suggests the large unconventional SOT reduces the switching current density and enhances the robustness of the switching. Our work shows that all-vdW heterostructures are promising candidates for future highly efficient and stable SOT-based devices.

cond-mat.mes-hall

Strong magnon-magnon coupling in an ultralow damping all-magnetic-insulator heterostructure

Magnetic insulators such as yttrium iron garnets (YIGs) are of paramount importance for spin-wave or magnonic devices as their ultralow damping enables ultralow power dissipation that is free of Joule heating, exotic magnon quantum state, and coherent coupling to other wave excitations. Magnetic insulator heterostructures bestow superior structural and magnetic properties and house immense design space thanks to the strong and engineerable exchange interaction between individual layers. To fully unleash their potential, realizing low damping and strong exchange coupling simultaneously is critical, which often requires high quality interface. Here, we show that such a demand is realized in an all-insulator thulium iron garnet (TmIG)/YIG bilayer system. The ultralow dissipation rates in both YIG and TmIG, along with their significant spin-spin interaction at the interface, enable strong and coherent magnon-magnon coupling with a benchmarking cooperativity value larger than the conventional ferromagnetic metal-based heterostructures. The coupling strength can be tuned by varying the magnetic insulator layer thickness and magnon modes, which is consistent with analytical calculations and micromagnetic simulations. Our results demonstrate TmIG/YIG as a novel platform for investigating hybrid magnonic phenomena and open opportunities in magnon devices comprising all-insulator heterostructures.

cond-mat.mtrl-sci

Experimental evidence for Berry curvature multipoles in antiferromagnets

Berry curvature multipoles appearing in topological quantum materials have recently attracted much attention. Their presence can manifest in novel phenomena, such as nonlinear anomalous Hall effects (NLAHE). The notion of Berry curvature multipoles extends our understanding of Berry curvature effects on the material properties. Hence, research on this subject is of fundamental importance and may also enable future applications in energy harvesting and high-frequency technology. It was shown that a Berry curvature dipole can give rise to a 2nd order NLAHE in materials of low crystalline symmetry. Here, we demonstrate a fundamentally new mechanism for Berry curvature multipoles in antiferromagnets that are supported by the underlying magnetic symmetries. Carrying out electric transport measurements on the kagome antiferromagnet FeSn, we observe a 3rd order NLAHE, which appears as a transverse voltage response at the 3rd harmonic frequency when a longitudinal a.c. current drive is applied. Interestingly, this NLAHE is strongest at and above room temperature. We combine these measurements with a scaling law analysis, a symmetry analysis, model calculations, first-principle calculations, and magnetic Monte-Carlo simulations to show that the observed NLAHE is induced by a Berry curvature quadrupole appearing in the spin-canted state of FeSn. At a practical level, our study establishes NLAHE as a sensitive probe of antiferromagnetic phase transitions in other materials, such as moir\'e superlattices, two-dimensional van der Waal magnets, and quantum spin liquid candidates, that remain poorly understood to date. More broadly, Berry curvature multipole effects are predicted to exist for 90 magnetic point groups. Hence, our work opens a new research area to study a variety of topological magnetic materials through nonlinear measurement protocols.

cond-mat.mes-hall

Cryogenic in-memory computing using magnetic topological insulators

Machine learning algorithms have been proven effective for essential quantum computation tasks such as quantum error correction and quantum control. Efficient hardware implementation of these algorithms at cryogenic temperatures is essential. Here, we utilize magnetic topological insulators as memristors (termed magnetic topological memristors) and introduce a cryogenic in-memory computing scheme based on the coexistence of the chiral edge state and the topological surface state. The memristive switching and reading of the giant anomalous Hall effect exhibit high energy efficiency, high stability, and low stochasticity. We achieve high accuracy in a proof-of-concept classification task using four magnetic topological memristors. Furthermore, our algorithm-level and circuit-level simulations of large-scale neural networks demonstrate software-level accuracy and lower energy consumption for image recognition and quantum state preparation compared with existing magnetic memristor and CMOS technologies. Our results not only showcase a new application of chiral edge states but also may inspire further topological quantum physics-based novel computing schemes.

cond-mat.mes-hall

Temperature dependence of the damping parameter in the ferrimagnet Gd$_3$Fe$_5$O$_{12}$

The damping parameter $α_{\text{FM}}$ in ferrimagnets defined according to the conventional practice for ferromagnets is known to be strongly temperature dependent and diverge at the angular momentum compensation temperature, where the net angular momentum vanishes. However, recent theoretical and experimental developments on ferrimagnetic metals suggest that the damping parameter can be defined in such a way, which we denote by $α_{\text{FiM}}$, that it is free of the diverging anomaly at the angular momentum compensation point and is little dependent on temperature. To further understand the temperature dependence of the damping parameter in ferrimagnets, we analyze several data sets from literature for a ferrimagnetic insulator, gadolinium iron garnet, by using the two different definitions of the damping parameter. Using two methods to estimate the individual sublattice magnetizations, which yield results consistent with each other, we found that in all the used data sets, the damping parameter $α_{\text{FiM}}$ does not increase at the angular compensation temperature and shows no anomaly whereas the conventionally defined $α_{\text{FM}}$ is strongly dependent on the temperature.

cond-mat.mtrl-sci