arXiv subjects

Ruochen Lu

Publications and source records attributed to Ruochen Lu.

At least 19 recordsLinked to original sources

arXiv2026

Emergence of millimeter-wave resonances in self-assembled ferroelectric metamaterials

Resonators are a key component in modern communications and computing. As demand and technological advances push component requirements into the terahertz regime, there is significant research devoted to the search for resonances at these frequencies. While uniform solid-state materials usually do not intrinsically feature resonances in this frequency range, self-assembled periodic arrays of ferroelectric nanodomains may provide an engineering route to design millimeter-wave properties. Here, we utilize prototypical dielectric-ferroelectric SrTiO3/PbTiO3 superlattices to robustly design periodic ferroelectric nano-scale domains. Phase field simulations predict an emergent domain breathing mode in complex polar textures and state-of-the-art millimeter-wave characterization shows evidence for such emergent resonances up to hundreds of GHz. Complex polar textures in these superlattices lead to emergent piezoelectric properties that also result in millimeter-wave resonances, which are predicted by second principles methods and confirmed by direct measurement. The principles investigated in this work suggest a new modality for ferroelectrics in the design of millimeter-wave electronics.

cond-mat.mtrl-sci↗

arXiv2026

In-Plane Q Anisotropy of Higher-Order XBARs

128$^\circ$Y-cut lithium niobate (LN) laterally field-excited higher-order antisymmetric bulk acoustic resonators (XBARs) have attracted interest for high-frequency acoustic devices thanks to their high electromechanical coupling coefficient ($k^2$), high quality factor ($Q$) from low metal coverage ratio, and thickness-defined resonant frequency. So far, the in-plane orientation of these resonators is commonly chosen to maximize $k^2$, thereby maximizing bandwidth. More recently, in-plane-rotated XBARs in 128$^\circ$Y-cut LN have been built to provide greater design flexibility in filter synthesis. However, the in-plane anisotropy of $Q$ has been far less explored. This leaves an important gap in understanding whether the propagation direction that determines $k^2$ also affects $Q$. In this work, we investigate the anisotropic $Q$ of higher-order antisymmetric modes (namely, A$_3$, A$_5$, and A$_7$) in 500-nm-thick 128$^\circ$Y-cut LN on Si. By characterizing resonator performance in various in-plane orientations, we observe that both Bode $Q$ and $Q_{\mathrm{3dB}, f_p}$ show minimum values at 90$^\circ$ to the material x-axis and maximum values around 0$^\circ$, following a trend similar to $k^2$. The A$_3$, A$_5$, and A$_7$ modes around 10.4, 17, and 24 GHz exhibit averaged Bode $Q$/$Q_{\mathrm{3dB}, f_p}$ values of 735/556, 204/149, and 59/37, respectively. At 90$^\circ$, the average Bode $Q$ values are reduced to 66, 9, and 12. Finite element analysis (FEA) results suggest that the orientation-dependent degradation of $Q$ near 90$^\circ$ is associated with stronger transverse displacement near the inactive and anchor regions, resulting in enhanced energy leakage. These results reveal an orientation-dependent loss pathway in 128$^\circ$Y-cut LN XBARs and provide design guidance for jointly optimizing $k^2$ and $Q$.

physics.app-ph↗

arXiv2026

Q-Enhanced SH-SAW Ladder Filter in Thin-Film Lithium Tantalate Using Bartlett Apodization

Shear-horizontal surface acoustic wave (SH-SAW) filters have shown strong potential for low-loss, compact, GHz-frequency RF front ends. In this work, we demonstrate a high-performance SH-SAW filter design at 4.35 GHz utilizing 42{\deg}Y-cut thin-film lithium tantalate (LiTaO3) on a SiO2/Si platform. Despite the limitations of thin aluminum metallization and its associated ohmic losses, we show that implementing a Bartlett window apodization technique, primarily intended for in-band spurious-mode suppression, yields a significantly improved quality factor (Q) of 1,522 from 688 in conventional interdigitated SH-SAW resonators. This enhancement enables a third-order ladder filter at 4.3 GHz with an insertion loss of 1.59 dB, compared with 1.65 dB for a conventional SH-SAW filter. In addition, our filter with apodized resonator designs achieves a 3 dB fractional bandwidth (FBW) of 3.24% and out-of-band rejection exceeding 14 dB, all within a compact footprint of 0.4 mm2. These results suggest that apodized thin-film LiTaO3 designs are highly promising for low-loss, miniaturized, cost-effective radio frequency acoustic solutions in next-generation communication and sensing applications.

eess.SP↗

arXiv2026

High Coupling Tunable Acoustic Resonators in Monolithic Barium Titanate

The growing number of wireless communication bands has driven demand for compact, low-loss, and frequency adjustable RF filtering. Tunable acoustic resonators are well suited to address these needs, offering a path toward reconfigurable front ends with reduced component count. In this work, we extend upon previous conference results to investigate epitaxial barium titanate (BTO) grown on silicon as a platform for tunable acoustic resonators. We demonstrate lateral excitation of symmetric Lamb (S0) modes in 120 nm X-cut BTO membranes using a multi-cell electrode architecture that simultaneously achieves high electromechanical coupling and practical impedance levels. Devices are fabricated with laterally patterned electrodes on released BTO membranes. Under applied DC bias, ferroelectric domains align, allowing electrical excitation, frequency tuning, and quality-factor enhancement of acoustic modes. The primary resonance near 700 MHz exhibits a Bode quality factor of 175, electromechanical coupling up to 25.1%, and series and parallel resonance tunability of 2.3% and 5.6%, respectively. Voltage-dependent material parameters, including permittivity, stiffness, and piezoelectric coefficients, are extracted through a combination of modified Butterworth-Van Dyke modeling and finite-element simulation to explain the observed trends. These results highlight monolithic BTO on silicon as a promising material system for laterally excited, tunable acoustic resonators for reconfigurable RF applications.

eess.SP↗

arXiv2026

Thin Film AlN Microbolometer for Very Long-Wave Infrared Detection

We demonstrate a suspended thin-film aluminum nitride (AlN) microbolometer for narrowband very long-wave infrared detection. The device uses a 100-nm-thick AlN membrane suspended above a Pt back reflector by a 1-um air gap. Resonant absorption is set by the AlN transverse optical phonon near 15.4 um and is strengthened by suspension above the reflector. A periodic perforation pattern reduces membrane thermal mass and enhances absorption without further thinning the film. DC resistance measurements under tunable infrared illumination verify bolometric operation, and the measured spectral response follows the absorption profile expected from spectroscopic measurement of passive devices. Narrowband response is observed in the 14--18 um range, with peak responsivity of 920.8 ppm/mW at 15.48 um. This platform can enable compact wavelength-selective thermal detectors for multispectral imaging, on-chip infrared spectroscopy, and chemical sensing.

physics.optics↗

arXiv2026

Gradient Residual Stress in Transferred Thin-Film Lithium Niobate and Its Compensation Using Periodically Poled Piezoelectric Bilayers

In this work, we experimentally investigate the gradient stress (sigma1) in 128 deg Y-cut transferred thin film lithium niobate (TFLN) films with thicknesses from 100 to 460 nm using cantilever curvature analysis. The results reveal a strong dependence of sigma1 on both crystallographic orientation and film thickness, with stress-free orientations at approximately 55 deg and 125 deg for 220-460 nm films, shifting to approximately 20 deg and 160 deg for 100 nm films. The extracted normalized sigma1 ranges from -0.1 to 3.4 MPa/nm (100 nm), -0.8 to 0.34 MPa/nm (220 nm), and -0.12 to 0.08 MPa/nm (460 nm), indicating a pronounced thickness-dependent through-thickness stress gradient. Finite element simulations show excellent agreement with the measurements, validating the curvature-based extraction method and confirming that sigma1 originates from an orientation-dependent residual stress gradient. To mitigate this effect, a bilayer TFLN structure with opposite crystallographic orientations, forming a periodically poled piezoelectric film (P3F), is investigated, enabling partial cancellation of sigma1. A 90/110 nm P3F bilayer reduces the equivalent normalized sigma1 to -0.4 to -0.04 MPa/nm, resulting in significantly reduced deformation. These results establish gradient stress engineering through orientation, thickness, and bilayer design as an effective strategy for achieving mechanically stable and scalable TFLN microelectromechanical systems (MEMS) devices.

physics.app-ph↗

arXiv2026

Nonlinear Characterization of Thin-Film LiNbO3 Acoustic Filters

Compact, high-performance components in millimeter-wave (mmWave) communication systems demand new acoustic filter technology at increasingly higher frequencies. Among various promising mmWave platforms, first-order antisymmetric (A1) mode laterally excited bulk acoustic resonators (XBARs) in thin-film lithium niobate (LiNbO3) have perhaps the most impressive linear performance. Despite these advances, there are few reports of nonlinear characterization of LiNbO3 filters at mmWaves. Here, we address this gap by developing a new nonlinear methodology for high-frequency filters. The result is a methodology for performing power-dependent S-parameters and third-order intermodulation (IMD3) measurements. To test our methodology, we fabricated filters on transferred single-crystal LiNbO3 films on sapphire (Al2O3) and silicon (Si) substrates with amorphous silicon (aSi) sacrificial layer. At 21.8 GHz, the filters on Al2O3 demonstrated an insertion loss of 1.48 dB, a 3 dB fractional bandwidth (FBW) of 17.7%, and in-band third-order input intercept points (IIP3) of 50.8 dBm. At 21.6 GHz, the filters on silicon demonstrated an insertion loss of 2.47 dB, a 3 dB FBW of 18.6%, and in-band IIP3 of 46.5 dBm. The nonlinear results conclusively show that thermal stability and passband distortion improved on the Al2O3 substrate, confirming that substrate selection plays a pivotal role in mitigating nonlinearity in acoustic front-end modules.

eess.SP↗

arXiv2026

Spurious-Free Lithium Niobate Bulk Acoustic Wave Resonator with Grounded-Ring Electrode

High-performance piezoelectric resonators are promising energy storage elements for piezoelectric power conversion due to their compact footprint and low loss at frequencies where conventional magnetic components become bulky and inefficient. However, their practical use is often limited by the trade-off between a high electromechanical coupling coefficient (k^2) for wide-band operation and the emergence of spurious acoustic modes that limit the resonators' inductive bandwidth. This work reports a spurious-free thickness-extensional (TE)-mode bulk acoustic wave (BAW) resonator in single-crystal lithium niobate (LN) based on a grounded-ring electrode architecture. The proposed structure is analyzed through simulation and experimentally validated using electrical characterization and laser Doppler vibrometry (LDV). The results show that the grounded ring modifies the effective boundary conditions of the acoustic device, enabling a piston-like modal response that suppresses lateral spurious modes across the inductive band. The demonstrated device operates at 10.14 MHz and achieves an electromechanical coupling coefficient of 29.6%, a maximum in-band Bode quality factor (Q_Bode) of 5230, and a figure of merit (FoM, Q*k^2) of 1548. These results establish the grounded-ring TE-mode LN BAW resonator as a practical platform for piezoelectric power conversion and a broader design approach for realizing high-performance spurious-free acoustic resonators.

eess.SY↗

arXiv2026

Single-Crystal AlN Wafer-Based Bulk Acoustic Resonators for Piezoelectric Power Conversion

In this work, we demonstrate the first single-crystal aluminum nitride (AlN) wafer-based thickness-extensional (TE) mode bulk acoustic resonator for piezoelectric power conversion. The device exhibits a high series resonance 3-dB quality factor ($Q$) of 1677 and an electromechanical coupling coefficient ($k^2$) of 6.1%, highlighting the strong potential of AlN resonators for efficient power conversion. To suppress in-band spurious modes, a grounded ring structure is proposed and experimentally validated. The measured frequency-domain impedance response shows a spurious suppression of the spectrum above the resonance at 13.52 MHz. A comparative analysis with prior PZT, LN, and LT-based resonators indicates that AlN achieves a competitive figure of merit and $f \cdot Q$ product, while its material thermal conductivity is orders of magnitude higher than that of the incumbent piezoelectric power-converter resonators. The power-handling capability is expected to be superior in AlN single-crystal wafers and will be demonstrated in ongoing experiments. These results suggest that AlN offers a promising platform for compact, robust piezoelectric power converters and next-generation power electronic systems.

physics.app-ph↗

arXiv2026

Non-reciprocal electrooptic intermodal scattering with momentum engineered RF waves

Spatiotemporal modulation approaches have been often employed as alternatives for producing optical non-reciprocity without magneto-optic materials. Unidirectional inter-modal scattering, enabled by either acousto-optic or electro-optic (EO) modulation, is a promising method in this category as it can directly modify optical dispersions and even enables linear non-reciprocal photonic devices in the strong coupling limit. While EO approaches are often preferred for their practicality, it is challenging to generate the large spatiotemporal momentum required for inter-modal phase matching without EO drive schemes involving multiple drive stimuli. Here, we demonstrate highly selective non-reciprocal inter-modal EO scattering enabled by a single high-index radiofrequency (RF) traveling wave stimulus. Our experimental demonstration is performed on a thin-film lithium niobate integrated photonics platform, in which we engineer a slow-wave radiofrequency (SWRF) transmission line with an effective RF index > 9 that natively generates the required RF momentum while simultaneously maintaining strong RF-optical mode overlap. By additionally engineering the interaction length, we achieve a directional ~20 dB non-reciprocal scattering contrast. The SWRF architecture provides a scalable route to magnetic-free non-reciprocity and establishes momentum-engineered RF waves as a powerful tool for next-generation, fully integrated non-reciprocal photonic systems.

physics.optics↗

arXiv2026

Tunable Ferroelectric Acoustic Resonators in Monolithic Thin-Film Barium Titanate

The increasing development of wireless communication bands has motivated the development of compact, low-loss, and frequency adjustable RF filtering technologies. Acoustic resonators are the ideal solution to these requirements, and tunable implementations offer a path toward reconfigurable front ends. In this work, we investigate epitaxial barium titanate (BTO) grown on silicon as a platform for tunable acoustic resonators operating in the sub-GHz regime. We demonstrate lateral excitation of symmetric lamb (S0) modes in X-cut BTO membranes, in contrast to prior thickness-defined ferroelectric resonators. Devices are designed using finite-element simulations and fabricated with laterally patterned electrodes that enable overtone coupling to multiple resonant modes. Under applied DC bias, ferroelectric domains align, allowing electrical excitation, frequency tuning, and quality-factor enhancement of acoustic modes. Resonances near 300 MHz and 700 MHz exhibit electromechanical coupling up to 8% and bias-dependent frequency tuning, with a distinct transition in behavior near 20 V. These results highlight monolithic BTO on silicon as a promising material system for laterally excited, tunable acoustic resonators for reconfigurable RF applications.

eess.SY↗

arXiv2026

Lattice XBAR Filters in Thin-Film Lithium Niobate

This work presents the demonstration of lattice filters based on laterally excited bulk acoustic resonators (XBARs). Two filter implementations, namely direct lattice and layout-balanced lattice topologies, are designed and fabricated in periodically poled piezoelectric film (P3F) thin-film lithium niobate (TFLN). By leveraging the strong electromechanical coupling of XBARs in P3F TFLN together with the inherently wideband nature of the lattice topology, 3-dB fractional bandwidths (FBWs) of 27.42\% and 39.11\% and low insertion losses (ILs) of 0.88 dB and 0.96 dB are achieved at approximately 20 GHz for the direct and layout-balanced lattice filters, respectively, under conjugate matching. Notably, all prototypes feature compact footprints smaller than 1.3 mm\textsuperscript{2}. These results highlight the potential of XBAR-based lattice architectures to enable low-loss, wideband acoustic filters for compact, high-performance RF front ends in next-generation wireless communication and sensing systems, while also identifying key challenges and directions for further optimization.

eess.SP↗

arXiv2026

Uncooled low-noise thin-film optomechanical resonator for thermal sensing on lithium niobate

Optomechanical transduction harnesses the interaction between optical fields and mechanical motion to achieve sensitive measurement of weak mechanical quantities with inherently low noise. Lithium niobate combines low optical loss, strong piezoelectricity, high intrinsic fQ_m factor, and low thermal conductivity, making it promising for exploring optomechanical platforms targeting thermal sensing applications. Here, we developed an integrated optomechanical platform on thin-film lithium niobate with precisely engineered optical, mechanical, and thermal fields within a compact 40 {\mu}m by 40 {\mu}m footprint. The platform integrates suspended microring resonators with ultrathin central membranes, reducing mechanical stiffness and effective mass while maintaining a high optical factor Q_o of 1e6 and mechanical quality factor Q_m of 1117, which increases to 5.1e4 after oscillation. The design suppresses thermal dissipation into the silicon substrate and enhances thermal sensitivity, achieving a temperature coefficient of frequency of -124 ppm/K and a noise-equivalent power of 6.2 nW/sqrt(Hz) at 10 kHz at room temperature. This compact and scalable platform opens up new opportunities for high-sensitivity thermal sensing, supports heterogeneous integration with infrared absorbers for uncooled infrared detection, and enables fully integrated, all-optical on-chip readout, paving the way toward large-format, low-noise infrared sensing arrays.

physics.optics↗

arXiv2025

Bimorph Lithium Niobate Piezoelectric Micromachined Ultrasonic Transducers

Piezoelectric micromachined ultrasonic transducers (PMUTs) are widely utilized in applications that demand mechanical resilience, thermal stability, and compact form factors. Recent efforts have sought to demonstrate that single-crystal lithium niobate (LN) is a promising PMUT material platform, offering high electromechanical coupling (k2) and bidirectional performance. In addition, advances in LN film transfer technology have enabled high quality periodically poled piezoelectric films (P3F), facilitating a bimorph piezoelectric stack without intermediate electrodes. In this work, we showcase a bimorph PMUT incorporating a mechanically robust, 20 $\mu$m thick P3F LN active layer. We establish the motivation for LN PMUTs through a material comparison, followed by extensive membrane geometry optimization and subsequent enhancement of the PMUT's k2. We demonstrate a 775 kHz flexural mode device with a quality factor (Q) of 200 and an extracted k2 of 6.4\%, yielding a high transmit efficiency of 65 nm/V with a mechanically robust active layer. We leverage the high performance to demonstrate extreme-temperature resilience, showcasing stable device operation up to 600 $^\circ$C and survival up to 900 $^\circ$C, highlighting LN's potential as a resilient PMUT platform.

cond-mat.mtrl-sci↗

arXiv2025

Radial Mode Lithium Niobate Rosen Transformer

In this work, we demonstrate the first two-port radial-mode Rosen transformer based on 36$^{\circ}$Y-cut lithium niobate (LN) for piezoelectric power conversion. The device achieves a high transformation ratio (TF) of 16, a high electromechanical coupling factor ($k^2$) of 16.8\% and a quality factor ($Q$) of 2500, yielding an outstanding figure of merit (FoM = $Q \cdot k^2$) of 420. The fabricated transformer features a large effective turns ratio of 16 and delivers an open-circuit voltage gain of 45.56 (unloaded) and 40.57 with a load of 1 M$\Omega$ in parallel with 0.1 pF, validating its ability to provide efficient passive voltage amplification. An equivalent circuit model was developed to accurately fit both finite-element-simulated and measured admittance spectra, enabling reliable parameter extraction. These results establish LN radial-mode resonators as a promising high-performance, magnetic-less transformer platform.

physics.app-ph↗

arXiv2025

Residual Stress Anisotropy In Thin-Film Lithium Niobate For Stress-Managed MEMS

In this work, we present the first experimental study of residual stress and post-release beam deflection in 128-degree Y-cut thin-film lithium niobate (TFLN) on Si, revealing pronounced stress anisotropy with in-plane orientation. Using optical profilometry with curvature fitting, we extract the stress gradient (sigma1) and generate orientation-resolved stress maps across multiple film thicknesses (100 nm, 220 nm, and 460 nm). For films in the 220 to 460 nm range, we identify stress-free in-plane orientations near approximately 55 degrees and 125 degrees, enabling extremely flat suspended beams. In contrast, ultra-thin 100 nm films exhibit shifted stress-free orientations near approximately 20 degrees and 160 degrees. Leveraging these orientations, we demonstrate very long suspended beams up to 2 cm in length, 10 micrometers in width, and 460 nm in thickness without collapse. These results establish in-plane stress anisotropy and thickness selection in TFLN as practical design levers for mechanically stable, scalable, and stress-managed microelectromechanical systems (MEMS).

physics.app-ph↗

arXiv2025

Phononic Combs in Lithium Niobate Acoustic Resonators

Frequency combs consist of a spectrum of evenly spaced spectral lines. Optical frequency combs enable technologies ranging from timing, LiDAR, and ultra-stable signal sources. Microwave frequency combs are analogous to optical frequency combs, but often leverage electronic nonlinearity for comb generation. Generating microwave frequency combs using piezoelectric mechanical resonators would enable this behavior in a more compact form factor, thanks to the shorter acoustic wavelengths. In this work, we demonstrate a microwave frequency comb leveraging thermal nonlinearity in high quality factor ($Q$) overmoded acoustic resonators in thin film lithium niobate. By providing input power at 257 MHz, which is the sum frequency of two acoustic modes at 86 MHz and 171 MHz, we generate parametric down conversion and comb generation. We explore the nonlinear mixing regimes and the associated conditions for comb generation. Comb spacing is observed to vary significantly with drive frequency and power, and its general behavior is found to rely heavily on initial conditions. This demonstration showcases the potential for further improvement in compact and efficient microwave frequency combs, leveraging nonlinear acoustic resonators.

physics.app-ph↗

arXiv2025

62.6 GHz ScAlN Solidly Mounted Acoustic Resonators

We demonstrate a record-high 62.6 GHz solidly mounted acoustic resonator (SMR) incorporating a 67.6 nm scandium aluminum nitride (Sc0.3Al0.7N) piezoelectric layer on a 40 nm buried platinum (Pt) bottom electrode, positioned above an acoustic Bragg reflector composed of alternating SiO2 (28.2 nm) and Ta2O5 (24.3 nm) layers in 8.5 pairs. The Bragg reflector and piezoelectric stack above are designed to confine a third-order thickness-extensional (TE) bulk acoustic wave (BAW) mode, while efficiently transducing with thickness-field excitation. The fabricated SMR exhibits an extracted piezoelectric coupling coefficient (k2) of 0.8% and a maximum Bode quality factor (Q) of 51 at 63 GHz, representing the highest operating frequency reported for an SMR to date. These results establish a pathway toward mmWave SMR devices for filters and resonators in next-generation RF front ends.

eess.SP↗