arXiv subjects

Ruta Kulkarni

Publications and source records attributed to Ruta Kulkarni.

At least 19 recordsLinked to original sources

arXiv2026

Quantum interference in a twisted high-Tc SQUID senses emergent interfacial order

Engineering artificial systems by twisting and stacking van der Waals materials has proven to be an excellent platform for exploring emergent quantum phenomena that can be significantly different from the constituents. Recent advances in the fabrication of high-quality twisted interfaces provide a unique opportunity to study the little-explored interfacial superconducting order in twisted cuprate superconductors. In our work, we fabricate superconducting quantum interference devices (SQUID) that utilize the twisted interface of $\mathrm{Bi_2Sr_2CaCu_2O_{8+\delta}}$, a high-Tc cuprate superconductor. By measuring the magnetic field modulation of switching current and differential resistance, we find a $\mathrm{\pi}$ phase difference between the two Josephson junction arms of the SQUID reflecting chiral superconducting order -- a crucial aspect inaccessible to single Josephson junction devices of the past. Our observations also indicate co-tunneling of the Cooper pairs and a time-reversal symmetry-broken emergent superconducting order. Additionally, these SQUIDs are well suited for use as state-of-the-art flux sensors close to 77 K, achieving a flux noise sensitivity of $\sim$1.5 $\mathrm{\mu\Phi_0/\sqrt{Hz}}$. Stabilizing new superconducting orders using twisted interfaces and probing them using quantum interference opens new avenues to understanding the microscopic origin of unconventional superconductors. Our SQUID architecture is suitable for investigating the charge transport mechanisms and the symmetry of superconducting order at the interfaces of other systems, reflecting the broad applicability beyond cuprate superconductors.

cond-mat.supr-con↗

arXiv2025

The interplay of magnetic order with the electronic scattering and crystal-field effects in a metallic ferromagnet

The interplay between magnetic order, charge dynamics, and crystal field excitations underpins the emergent ground states of rare-earth intermetallics. Using time-domain terahertz spectroscopy, we probe this coupling in PrSi, a metallic ferromagnet. The optical response exhibits pronounced Drude-Smith behavior over a broad temperature range, indicating persistent carrier scattering. A classical Kondo-lattice model (CKLM) attributes this non-Drude conductivity to scattering of itinerant electrons by localized magnetic moments, persisting down to temperatures well below the magnetic ordering scale. At lower temperatures, beyond the scope of CKLM, our experiment reveals that the response is dominated by crystal-field excitations, with sharp transitions at 0.6 THz and 1.54 THz. The mode at 1.54 THz shows a dynamic correlation with the onset of ferromagnetic order, marking the onset of a crystal-field-governed low temperature regime.

cond-mat.str-el↗

arXiv2025

Single-Defect Spectroscopy via Random Telegraph Noise in Graphene-Contacted ReS$_2$-hBN Heterostructures

Defect spectroscopy in two-dimensional (2D) field-effect transistors (FETs) requires device architectures that suppress contact and disorder artifacts while preserving intrinsic carrier dynamics. Here, we demonstrate ReS$_2$-hBN FETs with few-layer graphene (FLG) van der Waals contacts that form nearly barrier-free interfaces, enabling intrinsic transport in ReS$_2$, an anisotropic, low-symmetry TMDC rarely exhibiting disorder-free behavior. The clean ReS$_2$-FLG platform allows direct observation of random telegraph noise (RTN) even in micron-scale channels, manifested as discrete two-level current fluctuations between 90-150 K arising from stochastic trapping at localized hBN defect sites. With increasing temperature, the RTN evolves into a 1/f spectrum as multiple traps activate. Statistical analysis of RTN amplitudes and capture-emission kinetics identifies substitutional carbon-related centers in hBN as dominant defects. These findings establish a generalizable approach for probing dielectric-origin defect dynamics in intrinsically conducting, low-symmetry 2D semiconductors.

cond-mat.mes-hall↗

arXiv2025

Unveiling the interplay of magnetic order and electronic band structure on the evolution of anomalous Hall effect in MnPtGa single crystal

The recent studies on the anomalous Hall effect (AHE) have revealed an intrinsic relationship between the topological band structure and the experimentally observed transverse conductivity. Consequently, this has led to a heightened focus on examining the topological aspects of AHE. Here we have studied sign reversal of anomalous Hall conductivity with temperature in the single crystalline MnPtGa (space group: $P6_3/mmc$). From the interdependence of the linear resistance, we claim that the origin of such behavior is intrinsic. By systematically studying the electronic band structure and Berry curvature of MnPtGa using first principle calculations supported by magnetic susceptibility and isothermal magnetization measurements we demonstrate that the temperature dependent complex magnetic structure plays a significant role and leads to the sign reversal of anomalous Hall conductivity. We proposed a continuous evolution of the magnetic structure, supported by the ab initio calculations, which is consistent with the experimental data. Our studies have established that the critical temperature ($\approx$110 K), where the sign reversal appears is associated with the magnetic structure and the magnitude of Mn moments.

cond-mat.mtrl-sci↗

arXiv2025

Linear magnetoresistance, anomalous Hall effect and de Haas-van Alphen oscillations in antiferromagnetic SmAg$_2$Ge$_2$ single crystals

Understanding the interplay among magnetism, electron correlations, and complex electronic structures in rare-earth materials requires both high-quality single crystals and systematic investigation of their electronic properties. In this study, we have successfully grown a single crystal of SmAg$_2$Ge$_2$ and investigated its anisotropic physical properties and de Haas-van Alphen (dHvA) quantum oscillations through experimental and theoretical approaches. SmAg$_2$Ge$_2$ crystallizes in the well known ThCr$_2$Si$_2$-type tetragonal structure with lattice parameters, $a~=~4.226$~\AA~ and $c~=~11.051$~\AA. Electrical transport and magnetization measurements indicate that it is metallic and exhibit antiferromagnetic ordering below the N\'{e}el temperature, $T_{\rm N}$ = 9.2~K. SmAg$_2$Ge$_2$ exhibits a linear non-saturating magnetoresistance, reaching $\sim 97$\% at $2$~K for applied magnetic field $B$~$\parallel~[001]$ and a significant anomalous Hall effect with an anomalous Hall angle of $0.10-0.14$. Additionally, magnetization measurements reveal dHvA quantum oscillations for magnetic fields greater than $8$~T. Our calculated electronic structure, quantum oscillations, and anomalous Hall effect in the canted antiferromagnetic state closely align with experimental results, underscoring the role of complex electronic structure and spin-canting-driven non-zero Berry curvature in elucidating the physical properties of SmAg$_2$Ge$_2$

cond-mat.str-el↗

arXiv2024

Electronic and magnetic ground state of 4$d^3$ double perovskite ruthenates A$_2$LaRuO$_6$ (A $=$ Ca, Sr, Ba)

4$d$ transition metal oxide (TMO) offers an intriguing puzzle for their electronic and magnetic ground state. They are in the cross-over regime of strong spin orbit interaction (SOI) and electron-electron correlation ($U$) with quenched orbital angular momentum. Our work unravels the electronic and magnetic ground state of the less investigated 4$d^{3}$ double perovskite ruthenates A$_{2}$LaRuO$_6$ (A = Ca, Ba). The negligible effect of SOI is evident from the bulk magnetic, specific heat measurements and density functional theory (DFT) calculations, indicating a classical spin-only magnetic ground state (${S}$ = 3/2) for the materials. Magnetization measurements show that both materials have long range antiferromagnetic order with high degree of magnetic frustration ($f$ $\approx$13 -15). Interestingly, a near $T^2$- behavior is observed in low-$T$ magnetic heat capacity measurement, indicating the presence of low-dimensional spin-wave exciation and magnetic frustration in both materials. The temperature dependent resistivity measurements and electronic band structure calculations confirm a conventional Mott insulating ground state in these two systems. Moreover, our experimental investigation and DFT calculations highlight the reason for the nonexistence of Sr$_2$LaRuO$_6$.

cond-mat.str-el↗

arXiv2024

Pick-up and assembling of chemically sensitive van der Waals heterostructures using dry cryogenic exfoliation

Assembling atomic layers of van der Waals materials (vdW) combines the physics of two materials, offering opportunities for novel functional devices. Realization of this has been possible because of advancements in nanofabrication processes which often involve chemical processing of the materials under study; this can be detrimental to device performance. To address this issue, we have developed a modified micro-manipulator setup for cryogenic exfoliation, pick up, and transfer of vdW materials to assemble heterostructures. We use the glass transition of a polymer PDMS to cleave a flake into two, followed by its pick-up and drop to form pristine twisted junctions. To demonstrate the potential of the technique, we fabricated twisted heterostructure of Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ (BSCCO), a van der Waals high-temperature cuprate superconductor. We also employed this method to re-exfoliate NbSe$_2$ and make twisted heterostructure. Transport measurements of the fabricated devices indicate the high quality of the artificial twisted interface. In addition, we extend this cryogenic exfoliation method for other vdW materials, offering an effective way of assembling heterostructures and twisted junctions with pristine interfaces.

cond-mat.mes-hall↗

arXiv2024

Terahertz crystal electric field transitions in a Kondo-lattice antiferromagnet

Hybridization between the localized f-electrons and the delocalized conduction electrons together with the crystal electric field (CEF) play a determinant role in governing the many-body ground state of a correlated-electron system. Here, we investigate the low-energy CEF states in CeAg_2Ge_2, a prototype Kondo-lattice antiferromagnet where Kondo correlation is found to exist within the antiferromagnetic phase. Using time-domain THz reflection spectroscopy, we show the first direct evidence of two low-energy CEF transitions at 0.6 THz (2.5 meV) and 2.1 THz (8.7 meV). The presence of low-frequency infrared-active phonon modes further manifests as a Fano-modified lineshape of the 2.1 THz CEF conductivity peak. The temporal spectral weights obtained directly from the THz time traces, in addition, corroborate the corresponding CEF temperature scales of the compound.

cond-mat.str-el↗

arXiv2023

Valence fluctuation in Ce$_2$Re$_3$Si$_5$ and Ising-type magnetic ordering in Pr$_2$Re$_3$Si$_5$ single crystals

Single crystals of ${\rm Ce_2Re_3Si_5}$ and ${\rm Pr_2Re_3Si_5}$ have been grown by Czochralski method in a tetra-arc furnace. Powder x-ray diffraction confirmed that these compounds crystallize in the ${\rm U_2Mn_3Si_5}$-type tetragonal crystal structure with space group $P4/mnc$ (No. 128). The anisotropic physical properties have been studied comprehensively by measuring the magnetic susceptibility, isothermal magnetization, electrical transport and specific heat. The low value of magnetic susceptibility together with no magnetic transition down to $2$~K gives evidence that the Ce-ions are in the intermediate valence state in ${\rm Ce_2Re_3Si_5}$. On the other hand ${\rm Pr_2Re_3Si_5}$ revealed a magnetic ordering at $9$~K. The sharp drop in the magnetic susceptibility and a spin flip like metamagnetic transition, for $H~\parallel~[001]$ in the magnetization plot of ${\rm Pr_2Re_3Si_5}$ suggest an Ising-type antiferromagnetic ordering. Based on magnetic susceptibility and isothermal magnetization data, a detailed crystal electric field (CEF) analysis shows that degenerate ${J} = 4$ Hund's rule derived ground state of ${\rm Pr^{3+}}$ ion splits into nine singlets with an overall splitting of $1179$~K. The magnetic ordering in ${\rm Pr_2Re_3Si_5}$ is due to the exchange-generated admixture of the lowest lying CEF energy levels. Heat capacity data reveal a sharp peak at $9$~K, that confirms the bulk nature of the magnetic ordering in ${\rm Pr_2Re_3Si_5}$.

cond-mat.str-el↗

arXiv2023

Ultrafast Carrier Relaxation and Second Harmonic Generation in a Higher-Fold Weyl Fermionic System PtAl

In topological materials, shielding of bulk and surface states by crystalline symmetries has provided hitherto unknown access to electronic states in condensed matter physics. Interestingly, photo-excited carriers relax on an ultrafast timescale, demonstrating large transient mobility that could be harnessed for the development of ultrafast optoelectronic devices. In addition, these devices are much more effective than topologically trivial systems because topological states are resilient to the corresponding symmetry-invariant perturbations. By using optical pump probe measurements, we systematically describe the relaxation dynamics of a topologically nontrivial chiral single crystal, PtAl. Based on the experimental data on transient reflectivity and electronic structures, it has been found that the carrier relaxation process involves both acoustic and optical phonons with oscillation frequencies of 0.06 and 2.94 THz, respectively, in picosecond time scale. PtAl with a space group of $P$$2_{1}$3 allows only one non-zero susceptibility element i.e. $d_{14}$, in second harmonic generation (SHG) with a large value of 468(1) pm/V, which is significantly higher than that observed in standard GaAs(111) and ZnTe(110) crystals. The intensity dependence of the SHG signal in PtAl reveals a non-perturbative origin. The present study on PtAl provides deeper insight into topological states which will be useful for ultrafast optoelectronic devices.

cond-mat.mes-hall↗

arXiv2023

A Trivial Geometrical Phase of an Electron Wavefunction in a Direct Band Gap Semiconductor CdGeAs$_{2}$

Chalcopyrite compounds are extensively explored for their exotic topological phases and associated phenomena in a variety of experiments. Here, we discuss the electrical transport properties of a direct energy gap semiconductor CdGeAs$_{2}$. The observed transverse magnetoresistance (MR) is found to be around 136% at a temperature of 1.8 K and a magnetic field of 14 T, following the semiclassical exponent MR $\sim$ $B^{2.18}$. The MR analysis exhibits a violation of the Kohler rule, suggesting the involvement of multiple carriers in the system. Below 15 K, with decreasing magnetic field, the MR increases, leading to the well known quantum interference phenomenon weak localization (WL). The analysis of the magnetoconductivity data based on the Hikami-Larkin-Nagaoka (HLN) model unveils three dimensional nature of the WL and the weak spin-orbit coupling in CdGeAs$_{2}$. The phase coherence length follows the $L_ϕ$ $\sim$ $T^{-0.66}$ power law, which exhibits the 3D nature of the observed WL feature.

cond-mat.str-el↗

arXiv2022

High-temperature Josephson diode

Symmetry plays a critical role in determining various properties of a material. Semiconducting p-n junction diode exemplifies the engineered skew electronic response and is at the heart of contemporary electronic circuits. The non-reciprocal charge transport in a diode arises from doping-induced breaking of inversion symmetry. Breaking of time-reversal, in addition to inversion symmetry in some superconducting systems, leads to an analogous device - the superconducting diode. Following the pioneering first demonstration of the superconducting diode effect (SDE), a plethora of new systems showing similar effects have been reported. SDE lays the foundation for realizing ultra-low dissipative circuits, while Josephson phenomena-based diode effect (JDE) can enable realization of protected qubits. However, SDE and JDE reported thus far are at low temperatures ($\sim$ 4 K or lower) and impede their adaptation to technological applications. Here we demonstrate a Josephson diode working up to 77 K using an artificial Josephson junction (AJJ) of twisted layers of Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ (BSCCO). The non-reciprocal response manifests as an asymmetry in the magnitude of switching currents and their distributions and appears for all twist angles. The asymmetry is induced by and tunable with a very small magnetic field applied perpendicular to the junction. We report a record asymmetry of 60 % at 20 K. We explain our results within a vortex-based scenario. Our results provide a path toward realizing superconducting quantum circuits at liquid nitrogen temperature.

cond-mat.supr-con↗

arXiv2022

Analysis of the unconventional chiral fermions in a non-centrosymmetric chiral crystal $\textbf {PtAl}$

Symmetry-protected non-trivial states in chiral topological materials hold immense potential for fundamental science and technological advances. Here, we report electrical transport, quantum oscillations, and electronic structure results of a single crystal of chiral quantum material $\rm PtAl$. Based on the de Haas-van Alphen (dHvA) oscillations, we show that the smallest Fermi pocket ($α$) possesses a non-trivial Berry phase $1.16$$π$. The band associated with this Fermi pocket carries a linear energy dispersion over a substantial energy window of $\sim$700 meV that is further consistent with the calculated optical conductivity. First-principles calculations unfold that $\rm PtAl$ is a higher-fold chiral fermion semimetal where structural chirality drives the chiral fermions to lie at the high-symmetry $Γ$ and $R$ points of the cubic Brillouin zone. In the absence of spin-orbit coupling, the band crossings at $Γ$ and $\rm R$ points are three- and four-fold degenerate with a chiral charge of $-2$ and $+2$, respectively. The inclusion of spin-orbit coupling transforms these crossing points into four- and six-fold degenerate points with a chiral charge of $-4$ and $+4$. Nontrivial surface states on the $(001)$ plane connect the bulk projected chiral points through the long helical Fermi arcs that spread over the entire Brillouin zone.

cond-mat.str-el↗

arXiv2022

Vanadium doped beta-Ga2O3 single crystals: Growth, Optical and Terahertz characterization

We report the growth of electrically-resistive vanadium-doped beta-Ga2O3 single crystals via the optical floating zone technique. By carefully controlling the growth parameters V-doped crystals with very high electrical resistivity compared to the usual n-type V-doped beta-Ga2O3 (ne~10^(18)/cm^3) can be synthesized. The optical properties of such high resistive V-doped b-Ga2O3 are significantly different compared to the undoped and n-doped crystals. We study the polarization-dependent Raman spectra, polarization-dependent transmission, temperature-dependent photoluminescence in the optical wavelength range and the THz transmission properties in the 0.2 - 2.6 THz range. The V-doped insulating Ga2O3 crystals show strong birefringence with refractive index contrast Dn of 0.3+-0.02 at 1 THz, suggesting it to be an ideal material for optical applications in the THz region.

cond-mat.mtrl-sci↗

arXiv2022

Orthorhombic charge density wave on the tetragonal lattice of EuAl4

EuAl4 possesses the BaAl4 crystal structure type with tetragonal symmetry I4/mmm. It undergoes a charge-density-wave (CDW) transition at TCDW = 145 K and it features four consecutive antiferromagnetic phase transitions below 16 K. Here, we use single-crystal x-ray diffraction to determine incommensurately modulated crystal structure of EuAl4 in its CDW state. The CDW is shown to be incommensurate with modulation wave vector q = (0, 0, 0.1781(3)) at 70 K. The symmetry of the incommensurately modulated crystal structure is orthorhombic with superspace group Fmmm(00σ)s00, where Fmmm is a subgroup of I4/mmm of index 2. Both the lattice and the atomic coordinates of the basic structure remain tetragonal. Symmetry breaking is entirely due to the modulation wave, where atoms Eu and Al1 have displacements exclusively along a, while the fourfold rotation would require equal displacement amplitudes along a and b. The calculated band structure of the basic structure and interatomic distances in the modulated crystal structure both indicate the aluminum atoms as location of the CDW. The temperature dependence of the specific heat reveals an anomaly at TCDW = 145 K of a magnitude similar to canonical CDW systems. The present discovery of orthorhombic symmetry for the CDW state of EuAl4 leads to the suggestion of monoclinic instead of orthorhombic symmetry for the third AFM state.

cond-mat.str-el↗

arXiv2022

Terahertz Optical Properties and Birefringence in Single Crystal Vanadium doped [100] \b{eta}-Ga2O3

We report the Terahertz optical properties of the Vanadium doped [100] \b{eta}-Ga2O3 using Terahertz Time-Domain Spectroscopy (THz-TDS). The V-doped \b{eta}-Ga2O3 crystal shows strong birefringence in the 0.2-2.4 THz range. Further, phase retardation by the V-doped \b{eta}-Ga2O3 has been measured over the whole THz range by Terahertz Time-Domain Polarimetry (THz-TDP). It is observed that the V-doped \b{eta}-Ga2O3 crystal behaves both as a quarter waveplate (QWP) at 0.38, 1.08, 1.71, 2.28 THz, and a half waveplate (HWP) at 0.74 and 1.94 THz, respectively.

cond-mat.mtrl-sci↗

arXiv2021

Antiferromagnetism and large magnetoresistance in GdBi single crystal

Single crystal of the binary equi-atomic compound GdBi crystallizing in the rock salt type cubic crystal structure with the space group $Fm\bar{3}m$ has been grown by flux method. The electrical and magnetic measurements have been performed on well oriented single crystals. The antiferromagnetic ordering of the Gd moments is confirmed at $T_{\rm N} = 27.5$~K. The magnetization measurement performed at $2$~K along the principal crystallographic direction [100] did not show any metamagnetic transition and no sign of saturation up to $7$~T. Zero field electrical resistivity reveals a sharp drop at $27.5$~K suggesting a reduction in the spin disorder scattering due to the antiferromagnetic alignment of the Gd moments. The residual resistivity at $2$~K is 390~n$Ω$cm suggesting a good quality of the grown crystal. The magneto resistance attains a value of $1.0~\times~10^{4}\%$ with no sign of saturation, in a field of $14$~T, at $T = 2$~K. Shubnikov de Hass (SdH) oscillations have been observed in the high field range of the magnetoresistance with five different frequencies corresponding to the extremal areas of the Fermi surface. Analysis of the Hall data revealed a near compensation of the charge carriers accounting for the extremely large magnetoresistance.

cond-mat.str-el↗

arXiv2021

Weak antilocalization and Shubnikov-de Haas oscillations in CaCuSb single crystal

Quantum oscillations in both linear and Hall resistivities and weak antilocalization (WAL) are barely observed in bulk single crystals. Here we report the transport properties of a CaCuSb single crystal that crystallizes in the hexagonal crystal structure. The magnetotransport studies reveal WAL and Shubnikov-de Haas (SdH) quantum oscillations with a unique frequency at 314 T. A cusp-like behavior in the low field regime of magnetotransport for J // (ab)-plane and B // [0001] confirms the WAL in CaCuSb. Angular-dependent normalized magnetoconductance and SdH oscillations studies reveal that the observed phenomena originate from the 2D transport channels. The high magnetic field (up to 45 T) experiments demonstrate plateau-like features in the Hall measurements. The first-principles calculations unfold that CaCuSb is a non-topological semimetal with dominant hole carries at the Fermi level. Our study reveals that CaCuSb is a promising candidate to explore the quasi-2D quantum transport phenomenon in the transition metal pnictide materials.

cond-mat.str-el↗