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Ryan J. Suess

Publications and source records attributed to Ryan J. Suess.

6 recordsLinked to original sources

Enhancing Eye Feature Estimation from Event Data Streams through Adaptive Inference State Space Modeling

Eye feature extraction from event-based data streams can be performed efficiently and with low energy consumption, offering great utility to real-world eye tracking pipelines. However, few eye feature extractors are designed to handle sudden changes in event density caused by the changes between gaze behaviors that vary in their kinematics, leading to degraded prediction performance. In this work, we address this problem by introducing the adaptive inference state space model (AISSM), a novel architecture for feature extraction that is capable of dynamically adjusting the relative weight placed on current versus recent information. This relative weighting is determined via estimates of the signal-to-noise ratio and event density produced by a complementary dynamic confidence network. Lastly, we craft and evaluate a novel learning technique that improves training efficiency. Experimental results demonstrate that the AISSM system outperforms state-of-the-art models for event-based eye feature extraction.

cs.CV

THz carrier dynamics in $SrTiO_{3}/LaTiO_{3}$ interface two-dimensional electron gases

A two-dimensional electron gas (2DEG) forms at the interface of complex oxides like $SrTiO_{3}$ (STO) and $LaTiO_{3}$ (LTO), despite each material having a low native conductivity, as a band and a Mott insulator, respectively. The interface 2DEG hosts charge carriers with moderate charge carrier density and mobility that raised interest as a material system for applications like field-effect transistors or detectors. Of particular interest is the integration of these oxide systems in silicon technology. To this end we study the carrier dynamics in a STO/LTO/STO heterostructure epitaxially grown on Si(001) both experimentally and theoretically. Linear THz spectroscopy was performed to analyze the temperature dependent charge carrier density and mobility, which was found to be in the range of $10^{12}$ $cm^2$ and 1000 $cm^2V^{-1}s^{-1}$, respectively. Pump-probe measurements revealed a very minor optical nonlinearity caused by hot carriers with a relaxation time of several 10 ps, even at low temperature. Density functional theory calculations with a Hubbard U term on ultrathin STO-capped LTO films on STO(001) show an effective mass of 0.64-0.68 $m_{e}$.

cond-mat.mtrl-sci

Tunable Ultrafast Thermal Relaxation in Graphene Measured by Continuous-Wave Photomixing

Hot electron effects in graphene are significant because of graphene's small electronic heat capacity and weak electron-phonon coupling, yet the dynamics and cooling mechanisms of hot electrons in graphene are not completely understood. We describe a novel photocurrent spectroscopy method that uses the mixing of continuous-wave lasers in a graphene photothermal detector to measure the frequency dependence and nonlinearity of hot-electron cooling in graphene as a function of the carrier concentration and temperature. The method offers unparalleled sensitivity to the nonlinearity, and probes the ultrafast cooling of hot carriers with an optical fluence that is orders of magnitude smaller than in conventional time-domain methods, allowing for accurate characterization of electron-phonon cooling near charge neutrality. Our measurements reveal that near the charge neutral-point the nonlinear power dependence of the electron cooling is dominated by disorder-assisted collisions, while at higher carrier concentrations conventional momentum-conserving cooling prevails in the nonlinear dependence. The relative contribution of these competing mechanisms can be electrostatically tuned through the application of a gate voltage -- an effect that is unique to graphene.

cond-mat.mes-hall

Mid-infrared time-resolved photoconduction in black phosphorus

Black phosphorus has attracted interest as a material for use in optoelectronic devices due to many favorable properties such as a high carrier mobility, field-effect, and a direct bandgap that can range from 0.3 eV in its bulk crystalline form to 2 eV for a single atomic layer. The low bandgap energy for bulk black phosphorus allows for direct transition photoabsorption that enables detection of light out to mid-infrared frequencies. In this work we characterize the room temperature optical response of a black phosphorus photoconductive detector at wavelengths ranging from 1.56 $μ$m to 3.75 $μ$m. Pulsed autocorrelation measurements in the near-infrared regime reveal a strong, sub-linear photocurrent nonlinearity with a response time of 1 ns, indicating that gigahertz electrical bandwidth is feasible. Time resolved photoconduction measurements covering near- and mid-infrared frequencies show a fast 65 ps rise time, followed by a carrier relaxation with a time scale that matches the intrinsic limit determined by autocorrelation. The sublinear photoresponse is shown to be caused by a reduction in the carrier relaxation time as more energy is absorbed in the black phosphorus flake and is well described by a carrier recombination model that is nonlinear with excess carrier density. The device exhibits a measured noise-equivalent power of 530 pW/$\sqrt{\text{Hz}}$ which is the expected value for Johnson noise limited performance. The fast and sensitive room temperature photoresponse demonstrates that black phosphorus is a promising new material for mid-infrared optoelectronics.

cond-mat.mtrl-sci

Carrier Dynamics and Transient Photobleaching in Thin Layers of Black Phosphorus

We present polarization-resolved transient transmission measurements on multi-layer black phosphorus. Background free two-color pump-probe spectroscopy measurements are carried out on mechanically exfoliated black phosphorus flakes that have been transferred to a large-bandgap, silicon carbide substrate. The blue-shifted pump pulse (780 nm) induces an increased transmission of the probe pulse (1560 nm) over a time scale commensurate with the measurement resolution (hundreds of fs). After the initial pump-induced transparency, the sign of the transient flips and a slower enhanced absorption is observed. This extended absorption is characterized by two relaxation time scales of 180 ps and 1.3 ns. The saturation peak is attributed to Pauli blocking while the extended absorption is ascribed to a Drude response of the pump-induced carriers. The anisotropic carrier mobility in the black phosphorus leads to different weights of the Drude absorption, depending on the probe polarization, which is readily observed in the amplitude of the pump-probe signals.

cond-mat.mtrl-sci

Sensitive Room-Temperature Terahertz Detection via Photothermoelectric Effect in Graphene

Terahertz (THz) radiation has uses from security to medicine; however, sensitive room-temperature detection of THz is notoriously difficult. The hot-electron photothermoelectric effect in graphene is a promising detection mechanism: photoexcited carriers rapidly thermalize due to strong electron-electron interactions, but lose energy to the lattice more slowly. The electron temperature gradient drives electron diffusion, and asymmetry due to local gating or dissimilar contact metals produces a net current via the thermoelectric effect. Here we demonstrate a graphene thermoelectric THz photodetector with sensitivity exceeding 10 V/W (700 V/W) at room temperature and noise equivalent power less than 1100 pW/Hz^1/2 (20 pW/Hz^1/2), referenced to the incident (absorbed) power. This implies a performance which is competitive with the best room-temperature THz detectors for an optimally coupled device, while time-resolved measurements indicate that our graphene detector is eight to nine orders of magnitude faster than those. A simple model of the response, including contact asymmetries (resistance, work function and Fermi-energy pinning) reproduces the qualitative features of the data, and indicates that orders-of-magnitude sensitivity improvements are possible.

cond-mat.mes-hall