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Ryan Schoell

Publications and source records attributed to Ryan Schoell.

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Structural Properties and Recrystallization Effects in Ion Beam Modified B20-type FeGe Films

Disordered iron germanium (FeGe) has recently garnered interest as a testbed for a variety of magnetic phenomena as well as for use in magnetic memory and logic applications. This is partially owing to its ability to host skyrmions and antiskyrmions -- nanoscale whirlpools of magnetic moments that could serve as information carriers in spintronic devices. In particular, a tunable skyrmion-antiskyrmion system may be created through precise control of the defect landscape in B20-phase FeGe, motivating developing methods to systematically tune disorder in this material and understand the ensuing structural properties. To this end, we investigate a route for modifying magnetic properties in FeGe. Specifically, we irradiate epitaxial B20-phase FeGe films with 2.8 MeV Au$^{4+}$ ions, which creates a dispersion of amorphized regions that may preferentially host antiskyrmions at densities controlled by the irradiation fluence. To further tune the disorder landscape, we conduct a systematic electron diffraction study with in-situ annealing, demonstrating the ability to recrystallize controllable fractions of the material at temperatures ranging from approximately 150$^{\circ}$ C to 250$^{\circ}$C. Finally, we describe the crystallization kinetics using the Johnson-Mehl-Avrami-Kolmogorov model, finding that the growth of crystalline grains is consistent with diffusion-controlled one-to-two dimensional growth with a decreasing nucleation rate.

cond-mat.mtrl-sci

Electrical properties of thermal oxide scales on pure iron in liquid lead-bismuth eutectic

The impedance behavior of pre-oxidized iron in liquid lead-bismuth eutectic (LBE) at 200 oC is studied using electrochemical impedance spectroscopy. The structures and resistance of oxide grown on iron oxidized in air at different temperatures and durations are compared. The results show that the resistance of the oxide film increases with increasing oxidizing temperature, due to the formation of a thicker scale and fewer defects. At the same temperature (600 oC), increasing the oxidation time can also reduce the defect concentration in the oxide film and improve the impedance of the oxide scale in LBE.

physics.app-ph