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Ryosuke Fujimoto

Publications and source records attributed to Ryosuke Fujimoto.

2 recordsLinked to original sources

Skewness in the Hellings-Downs curve

Recent Pulsar Timing Array datasets provide compelling evidence for a nano-Hertz gravitational-wave background, but robust detection requires characterizing statistical fluctuations of the Hellings-Downs (HD) correlation expected from a finite population of discrete sources. Building on the variance calculation of Allen (2023), we derive the third central moment (skewness) of the HD correlation for a single unpolarized point source and an ensemble of many interfering point sources in the confusion-noise regime. To isolate the intrinsic non-Gaussianity of the background, we extend the pulsar-averaging formalism to third order by introducing a three-point averaged correlation function, which allows us to define the cosmic skewness. We find that the skewness remains non-zero in the large-source-number limit and is controlled by a new geometric three-point function. These results suggest that incorporating higher-order moments could provide additional information on source discreteness beyond standard Gaussian analyses.

astro-ph.CO

Ambipolar suppression of superconductivity by ionic gating in optimally-doped BaFe2(As,P)2 ultrathin films

Superconductivity (SC) in the Ba-122 family of iron-based compounds can be controlled by aliovalent or isovalent substitutions, applied external pressure, and strain, the combined effects of which are sometimes studied within the same sample. Most often, the result is limited to a shift of the SC dome to different doping values. In a few cases, the maximum SC transition at optimal doping can also be enhanced. In this work, we study the combination of charge doping together with isovalent P substitution and strain by performing ionic gating experiments on BaFe$_2$(As$_{0.8}$P$_{0.2}$)$_2$ ultrathin films. We show that the polarization of the ionic gate induces modulations to the normal-state transport properties that can be mainly ascribed to surface charge doping. We demonstrate that ionic gating can only shift the system away from the optimal conditions, as the SC transition temperature is suppressed by both electron and hole doping. We also observe a broadening of the resistive transition, which suggests that the SC order parameter is modulated nonhomogeneously across the film thickness, in contrast with earlier reports on charge-doped standard BCS superconductors and cuprates.

cond-mat.supr-con