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Ryosuke Okumura

Publications and source records attributed to Ryosuke Okumura.

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Emergent electronic insulating states in a one-dimensional moiré superlattice

Two-dimensional (2D) van der Waals (vdW) moiré superlattices have provided a powerful knob to engineer a plethora of new quantum states. However, extending such moiré engineering to one-dimensional (1D) vdW systems has remained challenging. Here we report the moiré-engineered electronic insulating states in a new 1D moiré superlattice, by crystallographically aligning an armchair single-walled carbon nanotube (SWNT) to 2D hexagonal boron nitride (hBN) substrate. Remarkably, we observe the emergence of pronounced insulating states at charge neutrality point (CNP), full and half moiré fillings in lattice-aligned armchair SWNT/hBN heterostructures by low-temperature electrical transport measurements. In strong contrast, armchair SWNT devices without hBN alignment do not show any of these insulating behaviors, providing compelling evidence for the significant 1D moiré effect. Our density functional theory (DFT) and tight-binding calculations reveal that synergetic nanotube partial flattening and in-plane lattice reconstruction at 1D moiré interface expand the most stable AB' stacking regions (carbon on top of boron) and open sizable band gaps at both CNP and full moiré fillings at the single-particle level. Our one-body theory predicts no band gaps at half moiré fillings, suggesting that electron correlation and/or electron-phonon interaction may give rise to these emergent insulating behaviors in our 1D moiré systems. Our work establishes a new and definite moiré engineering route for 1D vdW materials and opens an exciting avenue for exploring interaction-induced quantum phases in 1D.

cond-mat.mes-hall

One-dimensional moiré engineering in zigzag graphene nanoribbons on hBN

We study the structural relaxation and electronic properties of a one-dimensional (1D) moiré system composed of a zigzag graphene nanoribbon (GNR) placed on a hexagonal boron nitride (hBN) substrate. Using an effective grid model derived from continuum elasticity theory, we calculate the relaxed atomic structure of the GNR/hBN system for various twist angles and ribbon widths. The relaxation gives rise to a characteristic 1D domain structure consisting of alternating commensurate AB$'$ regions and two distinct types of domain boundaries. At finite twist angles, the ribbon adopts a wavy shape, locally tracing the hBN zigzag direction but occasionally sliding to adjacent atomic rows. The resulting moiré potential strongly modulates the electronic structure: the zero-energy zigzag edge states are modulated by the local stacking, leading to densely packed subbands in the AB$'$ domains and sharply localized domain-wall states in the energy gaps between domain plateaus, which together realize gate-tunable one-dimensional arrays of quantum-confined electronic states. Our results demonstrate that moiré modulation in GNR/hBN heterostructures provides a versatile platform for electronic structure engineering and the design of 1D moiré nanodevices.

cond-mat.mes-hall