arXiv subjects

Ryotaro Sahashi

Publications and source records attributed to Ryotaro Sahashi.

4 recordsLinked to original sources

arXiv2026

Atomistic origin and strain control of the finite-temperature dielectric response in BaTiO3

The dielectric response of BaTiO3 (BTO) varies strongly with temperature, yet its local atomic origin remains unclear. Using electric-field-coupled molecular dynamics with a machine-learning force field, we show that the permittivity tracks the field-induced angular redistribution of local Ti-O off-centering rather than its magnitude or mean polar angle. Temperature and biaxial strain modify the local structure differently, but both responses follow a common relation with the same orientational descriptor, providing a real-space counterpart to soft-mode behavior.

cond-mat.mtrl-sci↗

arXiv2026

Transient Detour and Cooperative Oxygen Exchange in the Polarization Switching of Ferroelectric Hf0.5Zr0.5O2

Hafnium zirconium oxide (HZO) has attracted significant attention as a core material for next-generation non-volatile memories due to its excellent ferroelectricity in the ultra-thin film regime and its CMOS process compatibility. However, the exploration of its polarization switching mechanism has predominantly relied on static energy barrier analyses, leaving the transient bond formation and cooperative dynamic mechanisms under actual electric field driving unresolved. In this study, we performed Electric-Field-Induced MD simulations on a defect-free ideal HZO lattice using a fine-tuned machine learning force field (MACEField). As a result, we successfully reproduced the P-E hysteresis loop dynamically and demonstrated that the polarization switching in HZO is driven not by conventional simple displacement models (S:N/S:T models), but by the dynamic mutual exchange of 3-coordinated oxygen (O3c) and 4-coordinated oxygen (O4c). Analysis of the oxygen atom displacement trajectories revealed that this pathway is accompanied by a unique "detour" behavior originating from transient cation-oxygen bond formation. Furthermore, we identified an "internal self-compensation mechanism" in which the local volumetric expansion and contraction accompanying the coordination number changes are effectively offset within the cell. These findings provide, from a dynamic perspective, a microscopic physical origin of for HZO's exceptional ability to sustain stable polarization switching without macroscopic strain, a property that has long distinguished HZO from conventional perovskite ferroelectrics yet lacked atomistic explanation. These findings suggest that preserving the integrity of cooperative O3c/O4c exchange pathways, rather than minimizing individual atomic displacements, is the key design principle for endurance and scalability in next-generation ferroelectric memories.

cond-mat.mtrl-sci↗

arXiv2026

Origin of Reduced Coercive Field in ScAlN: Synergy of Structural Softening and Dynamic Atomic Correlations

Among wurtzite-type ferroelectrics, scandium-doped aluminum nitride (ScAlN) has emerged as a leading candidate for CMOS-compatible low-voltage memory, combining strong spontaneous polarization with process compatibility. A remarkable feature of this system is the pronounced reduction of the coercive field (Ec) with increasing Sc concentration; however, its microscopic origin remains poorly understood at the atomic scale, particularly under finite temperature and applied electric fields. Here, we integrate a density-functional-theory-accurate machine-learning force field with an equivariant neural-network-based Born effective charge model to perform large-scale electric-field-driven molecular dynamics simulations at near-first-principles accuracy. The framework correctly reproduces the experimentally observed qualitative trends in key experimental trends, including the decrease in the c/a ratio and the monotonic reduction of Ec with increasing Sc content. Beyond static structural softening, we uncover a dynamic mechanism underlying Ec reduction. Sc atoms exhibit larger thermal vibrations and undergo preceding displacements during switching, acting as dynamic triggers for polarization reversal. Moreover, the displacement correlation between Sc and Al atoms evolves systematically with composition, enhancing cooperative atomic rearrangements and lowering the effective switching barrier. These results demonstrate that Ec reduction in ScAlN arises from the synergy of structural softening and dynamic correlation evolution, providing a new perspective for designing hexagonal ferroelectrics.

cond-mat.mtrl-sci↗

arXiv2026

Decoupling structural and bonding effects on ferroelectric switching in ScAlN via molecular dynamics under an applied electric field

ScxAl1-xN has emerged as a promising wurtzite-type ferroelectric material, where increasing the Sc composition reduces both the coercive field (Ec) and remanent polarization (Pr). This composition-dependent behavior is physically attributed to two simultaneous changes: the increase in the internal structural parameter u (structural effect) and the weakening of bond strength (bonding effect). Because these factors are strongly coupled in experiments, their individual contributions to ferroelectric switching remain unclear. In this study, we systematically decoupled these effects using machine-learning force field-based molecular dynamics (MD) simulations under an applied electric field. By artificially tuning u via in-plane strain at a fixed composition, we demonstrated that Pr is determined exclusively by the structural effect, exhibiting a universal linear dependence regardless of the composition. In contrast, Ec deviated from this structural trend, implying an additional compositional contribution. To isolate this, we evaluated configurations with identical u but varying Sc compositions; Pr remained constant, whereas Ec systematically decreased due to bond weakening. Furthermore, static nudged elastic band (NEB) calculations revealed that the static switching barrier depends solely on u, failing to explicitly capture the bonding effect on Ec. These results establish that while Pr is governed strictly by the structural effect, Ec is determined by a superposition of structural and bonding effects. Our findings highlight the necessity of dynamic MD simulations for fully understanding ferroelectric switching in compositionally tunable materials.

cond-mat.mtrl-sci↗