arXiv subjects

Ryoya Nakamura

Publications and source records attributed to Ryoya Nakamura.

6 recordsLinked to original sources

arXiv2026

Single-crystal growth and magnetic, magnetoelectric, and optical properties of ferroaxial-type SrMn$_2$Ni$_6$Te$_3$O$_{18}$

Single crystals of SrMn$_2$Ni$_6$Te$_3$O$_{18}$, a member of the ferroaxial-type magnetic oxide family $AB_{2}C_{6}$Te$_3$O$_{18}$ ($A$ = Pb, Sr; $B$ = Mn, Cd; $C$ = Ni, Co), have been successfully grown, and their structural, magnetic, magnetoelectric, and optical properties have been systematically studied. Imaging of the spatial distribution of electric-field-induced optical rotation reveals that the single crystals preferentially form single ferroaxial (FA) domains. Magnetization and neutron diffraction measurements show that Mn$^{2+}$ and Ni$^{2+}$ magnetic moments order antiferromagnetically at $T_{\rm N}$ = 83 K, forming a $c$-axis collinear bidirector-type antiferromagnetic structure. All independent magnetoelectric tensor components allowed by the magnetic point group 6/$m^{\prime}$ have been detected, and the $\chi_{33}$ component exhibits a pronounced temperature-dependent anomaly, including a peak and a sign reversal. Preferential formation of single FA domains and a similar $\chi_{33}$ anomaly are also observed in the isostructural compound PbMn$_2$Ni$_6$Te$_3$O$_{18}$. These findings suggest that the ferroaxial and magnetic characteristics within this structural framework are robust against Sr-Pb replacement.

cond-mat.mtrl-sci↗

arXiv2026

Impact of the out-of-plane conductivity on spin transport evaluation in a van der Waals material

Layered materials are promising candidates for spintronic applications due to their unique electronic structures and spin transport properties. However, the strong anisotropic conductivity inherent in these materials complicates the quantitative evaluation of spin Hall conductivity and spin diffusion length. In this work, we present a comprehensive study of spin transport in a transition metal dichalcogenide PtTe$_2$ by combining a three-dimensional finite element model with nonlocal spin valve structures. We developed a theoretical model that treats an anisotropic spin diffusion in the same way as the conventional isotropic model, enabling the extraction of spin diffusion lengths along both the in-plane and out-of-plane directions. Our analysis revealed that the conventional isotropic assumption tends to overestimate some values, particularly for the out-of-plane spin diffusion length and spin Hall conductivity. These findings provide new insight into anisotropic spin diffusion and spin-charge conversions in layered materials and emphasize the importance of accounting for anisotropic conductivity in the design of spintronic devices.

cond-mat.mes-hall↗

arXiv2025

Observation of the crossover from quantum fluxoid to half-quantum fluxoid in a chiral superconducting device

Topological superconductors are one of the intriguing material groups from the viewpoint of not only condensed matter physics but also industrial application such as quantum computers based on Majorana fermion. For the real application, developments of the thin-film topological superconductors are highly desirable. Bi/Ni bilayer is a possible candidate for thin-film chiral superconductors where the time-reversal symmetry is broken. Here we report the phase shift of resistance oscillations by half flux quantum in a ring-shaped device of epitaxial Bi/Ni bilayer induced by a small magnetic field through the ring. The half quantum fluxoid can be a decisive evidence for unconventional superconductors where the superconducting order parameter has an internal degree of freedom. The present result provides a functional operating principle for quantum devices where the phase of the supercurrent can be shifted by πwith a small magnetic field, based on the internal degree of freedom possessed by topological superconductivity.

cond-mat.supr-con↗

arXiv2024

Magnetotransport properties in van-der-Waals \textit{\textbf{R}}Te$_{3}$ (\textit{\textbf{R}} = La, Ce, Tb)

Rare-earth tritellurides are van-der-Waals antiferromagnets which have been attracting attention as materials not only with high mobility, but also with various states such as superconductivity under high pressure, incommensurate charge-density-wave (CDW) phase, and multiple antiferromagnetic phases. In this work, we performed longitudinal resistivity and Hall resistivity measurements simultaneously in exfoliated $R$Te$_{3}$ ($R$ =La, Ce, Tb) thin film devices, in order to investigate the influence of magnetic ordering on transport properties in van-der-Waals magnetic materials. We have obtained carrier mobility and concentration using a two-band model, and have observed an increase in carrier mobility in the antiferromagnets CeTe$_{3}$ and TbTe$_{3}$ due to the magnetic transition. Especially in CeTe$_{3}$, the carrier concentration has changed drastically below the magnetic transition temperature, suggesting the interaction between the CDW and antiferromagnetic phases. In addition, the analysis of the Shubnikov-de Haas oscillations in CeTe$_{3}$ supports the possibility of Fermi surface modulation by magnetic ordering. This research will pave the way not only for spintronic devices that take advantage of high mobility, but also for the study of the correlation between CDW and magnetism states in low-dimensional materials.

cond-mat.str-el↗

arXiv2022

Higher harmonic resistance oscillations in micro-bridge superconducting Nb ring

We studied resistance oscillations in two types of superconducting mesoscopic Nb rings. In a simple superconducting ring device, a resistance oscillation with a period of the quantized magnetic flux h/2e was clearly observed. On the other hand, in a micro-bridge ring device where two-narrow parts are embedded in parallel and work as superconductor-normal metal-superconductor junctions, higher harmonic resistance oscillations were obtained when the measurement current was well-tuned. We argue that such higher harmonic resistance oscillations can be detected even in the micro-bridge Nb superconducting ring device where the device size is much larger than the coherence length of Nb.

cond-mat.supr-con↗

arXiv2021

Thickness-induced crossover from strong to weak collective pinning in exfoliated FeTe$_{0.6}$Se$_{0.4}$ thin films at 1 T

We studied flux pinning in exfoliated FeTe$_{0.6}$Se$_{0.4}$ thin-film devices with a thickness $d$ from 30 to 150 nm by measuring the critical current density $J_{\mathrm{c}}$. In bulk FeTe$_{0.6}$Se$_{0.4}$, the flux pinning has been discussed in the framework of weak collective pinning, while there is little knowledge on the pinning mechanism in the thin-film region. From the thickness $d$ dependence of $J_{\mathrm{c}}$ at a fixed magnetic field of 1 T, we found that the strong pinning is dominant below $d \approx 70$ nm, while the weak collective pinning becomes more important above $d \approx 100$ nm. This crossover thickness can be explained by the theoretical model proposed by van der Beek $\textit{et al}$ [Phys. Rev. B. ${\bf 66}$, 024523 (2002)].

cond-mat.mes-hall↗