arXiv subjects

Ryutaro Yoshimi

Publications and source records attributed to Ryutaro Yoshimi.

18 recordsLinked to original sources

arXiv2026

Epitaxial growth of topological insulator $\beta$-Ag2Te thin films

We report epitaxial growth of $\beta$-Ag2Te thin films by molecular beam epitaxy. $\beta$-Ag2Te, recently identified as a topological insulator, was grown by depositing Ag on InP substrate at room temperature followed by Te supply at elevated temperature. X-ray diffraction measurements and transmission electron microscopy analyses confirmed the (002) crystal orientation and the epitaxial atomic arrangement of $\beta$-Ag2Te thin films. Electrical transport measurements revealed that the $\beta$-Ag2Te thin film exhibits two-dimensional metallic conduction while the bulk remains insulating. The epitaxial $\beta$-Ag2Te thin films obtained here provide a viable platform for investigating emergent phenomena arising from surface Dirac states and for designing heterojunction-based device structures.

cond-mat.mtrl-sci↗

arXiv2025

Two-dimensional superconducting diode effect in topological insulator/superconductor heterostructure

The superconducting diode effect (SDE) is characterized by the nonreciprocity of Cooper-pair motion with respect to current direction. In three-dimensional (3D) materials, SDE results in a critical current that varies with direction, making the effect distinctly observable: the material exhibits superconductivity in one direction while behaving as a resistive metal in the opposite direction. However, in genuinely two-dimensional (2D) materials, the critical current density is theoretically zero, leaving the manifestation of SDE in the 2D limit an intriguing challenge. Here, we present the observation of SDE in a heterostructure composed of the topological insulator Bi$_2$Te$_3$ and the iron based superconductor Fe(Se,Te) $-$a candidate for topological superconductor$-$ where superconductivity is confined to the 2D limit. The observed I-V characteristics reveal nonreciprocity in the vortex-creep regime, where finite voltages arise due to the two-dimensional nature of superconductivity. Furthermore, our 2D film demonstrates abrupt voltage jumps, influenced by both the current flow direction and the transverse magnetic field direction. This behavior resembles that of 3D materials but, in this case, is driven by the vortex-flow instability, as illustrated by voltage controlled S-shaped I-V curves. These results underscore the pivotal role of vortex dynamics in SDE and provide new insights into the interplay between symmetry breaking and two-dimensionality in topological insulator/superconductor systems.

cond-mat.supr-con↗

arXiv2025

Higher-order epitaxy: A pathway to suppressing structural instability and emergent superconductivity

Molecular beam epitaxy enables the growth of thin film materials with novel properties and functionalities. Typically, the lattice constants of films and substrates are designed to match to minimise disorders and strains. However, significant lattice mismatches can result in higher-order epitaxy, where commensurate growth occurs with a period defined by integer multiples of the lattice constants. Despite its potential, higher-order epitaxy is rarely used to enhance material properties or induce emergent phenomena. Here, we report single-crystalline FeTe films grown via 6:5 commensurate higher-order epitaxy on CdTe(001) substrates. Scanning transmission electron microscopy reveals self-organised periodic interstitials near the interface, arising from higher-order lattice matching. Synchrotron x-ray diffraction shows that the tetragonal-to-monoclinic structural transition in bulk FeTe is strongly suppressed. Remarkably, these films exhibit substrate-selective two-dimensional superconductivity, likely due to suppressed monoclinic distortion. These findings demonstrate the potential of higher-order epitaxy as a tool to control materials and inducing emergent phenomena.

cond-mat.mtrl-sci↗

arXiv2025

Quantum geometry in low-energy linear and nonlinear optical responses of magnetic Rashba semiconductor (Ge,Mn)Te

Quantum geometry appears as a key factor in understanding the optical properties of quantum materials, with the anticipation on diverging or quantized responses near the Dirac and Weyl points. Here we investigate linear and nonlinear optical responses -- optical conductivity and injection current -- in a magnetic Rashba semiconductor in the mid-infrared region, with varying the Fermi energy across the Dirac point. We reveal that the linear optical conductivity reflects quantum metric, which remains finite irrespective of the diminishing joint density-of-states at lower photon energy. It is also confirmed that the magnetic injection current enhances depending on the energy of the Fermi level relative to the Dirac point. These optical spectra are nicely reproduced by our theoretical calculations with geometrical effects taken into account.

cond-mat.mtrl-sci↗

arXiv2025

Control of nonreciprocal charge transport in topological insulator/superconductor heterostructures with Fermi level tuning and superconducting-layer thickness

Nonreciprocal charge transport (NCT) is defined as a phenomenon where electrical resistance depends on the current direction. It has been drawing much attention because it sensitively reflects the symmetry breaking of material systems. A topological insulator (TI)/superconductor (SC) heterostructure where the topological surface state (TSS) of the TI layer is proximitized with the SC layer is one such system that presents a sizable NCT due to a large spin-orbit coupling and superconductivity. Here, we report a control of the magnitude and sign of NCT: reversal of the direction of NCT by tuning the Fermi energy of TSS of the TI layer with respect to the charge neutral point by systematic regulation of Sb composition $x$ in a TI/SC heterostructures of (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$/FeSe$_{0.1}$Te$_{0.9}$. The result is consistent with the model of a TSS proximitized with superconductivity. Furthermore, we find a significant enhancement of the magnitude of NCT in the TI/SC heterostructures by reducing the thickness of the SC layer. The enhancement can be ascribed to the inversion-symmetry breaking of the FeSe$_{0.1}$Te$_{0.9}$ SC-layer itself adjacent to the TI layer. Our results highlight the essential role of the TSS for exhibiting NCT and offer new knobs to control the direction and magnitude of NCT.

cond-mat.supr-con↗

arXiv2025

AC Current-Driven Magnetization Switching and Nonlinear Hall Rectification in a Magnetic Topological Insulator

Spin-orbit torque arising from the spin-orbit-coupled surface states of topological insulators enables current-induced control of magnetization with high efficiency. Here, alternating-current (AC) driven magnetization reversal is demonstrated in a semi-magnetic topological insulator (Cr,Bi,Sb)2Te3/(Bi,Sb)2Te3, facilitated by a low threshold current density of 1.5x10^9 A/m^2. Time-domain Hall voltage measurements using an oscilloscope reveal a strongly nonlinear and nonreciprocal Hall response during the magnetization reversal process. Fourier analysis of the time-varying Hall voltage identifies higher-harmonic signals and a rectified direct-current (DC) component, highlighting the complex interplay among the applied current, external magnetic field, and magnetization dynamics. Furthermore, a hysteretic behavior in the current-voltage characteristics gives rise to frequency mixing under dual-frequency excitation. This effect, distinct from conventional polynomial-based nonlinearities, allows for selective extraction of specific frequency components. The results demonstrate that AC excitation can not only switch magnetization efficiently but also induce tunable nonlinear responses, offering a new pathway for multifunctional spintronic devices with potential applications in energy-efficient memory, signal processing, and frequency conversion.

cond-mat.mes-hall↗

arXiv2025

Non-Fermi liquid transport and strong mass enhancement near the nematic quantum critical point in FeSe$_x$Te$_{1-x}$ thin films

Unconventional superconductivity is often accompanied by non-Fermi liquid (NFL) behavior, which emerges near a quantum critical point (QCP) - a point where an electronic ordered phase is terminated at absolute zero under non-thermal parameters. While nematic orders, characterized by broken rotational symmetry, are sometimes found in unconventional superconductors, the role of nematic fluctuations in driving NFL transport behavior remains unclear. Here, we investigated electrical and thermoelectric transport properties in FeSe$_x$Te$_{1-x}$ thin films and observed hallmark NFL behavior: temperature-linear resistivity and logarithmic divergence of thermoelectricity at low temperatures. Notably, the thermoelectricity peaks sharply at the nematic QCP ($x$ = 0.45), highlighting the dominant role of nematic fluctuations in the NFL transport. Furthermore, we found that the pair-breaking mechanisms in the superconducting phase crosses over from orbital- to Pauli-limited effects, indicating the mass enhancement near the nematic critical regime. These findings reveal the profound impact of nematic fluctuations on both normal-state transport and superconducting properties.

cond-mat.str-el↗

arXiv2024

Emergence of ferroelectric topological insulator as verified by quantum Hall effect of surface states in (Sn,Pb,In)Te films

Emergent phenomena arising from nontrivial band structures based on topology and symmetry have been attracting keen interest in contemporary condensed-matter physics. Materials such as SnTe and PbTe are one such example, which demonstrate a topological phase transition while showing ferroelectric instability derived from their rock-salt structure. The ferroelectricity can lift the valley degeneracy, enabling the emergence of the Z2 topological insulator phase, although its observation in transport phenomena remains elusive. Here, we report magnetotransport properties of ferroelectric (Sn,Pb)Te thin films with finely-controlled Fermi levels via In doping. We identified the ferroelectric topological insulator phase from the observations of the quantum Hall states with filling factors of $ν$ = 1, 2 and 3 with both spin- and valley-degeneracy lifting. The electronic states are two-dimensional, indicating the ferroelectricity-induced topological surface states with a single Dirac cone. The finding of the new topological state with ferroelectricity will further expand the field of topological physics and advance the development of functional properties, such as topological nonlinear photonics and nonreciprocal transport with memory effect.

cond-mat.mtrl-sci↗

arXiv2024

This took us a Weyl: synthesis of a semimetallic Weyl ferromagnet with point Fermi surface

Quantum materials governed by emergent topological fermions have become a cornerstone of physics. Dirac fermions in graphene form the basis for moiré quantum matter, and Dirac fermions in magnetic topological insulators enabled the discovery of the quantum anomalous Hall effect. In contrast, there are few materials whose electromagnetic response is dominated by emergent Weyl fermions. Nearly all known Weyl materials are overwhelmingly metallic, and are largely governed by irrelevant, conventional electrons. Here we theoretically predict and experimentally observe a semimetallic Weyl ferromagnet in van der Waals (Cr,Bi)$_2$Te$_3$. In transport, we find a record bulk anomalous Hall angle $> 0.5$ along with non-metallic conductivity, a regime sharply distinct from conventional ferromagnets. Together with symmetry analysis, our data suggest a semimetallic Fermi surface composed of two Weyl points, with a giant separation $> 75\%$ of the linear dimension of the bulk Brillouin zone, and no other electronic states. Using state-of-the-art crystal synthesis techniques, we widely tune the electronic structure, allowing us to annihilate the Weyl state and visualize a unique topological phase diagram exhibiting broad Chern insulating, Weyl semimetallic and magnetic semiconducting regions. Our observation of a semimetallic Weyl ferromagnet offers an avenue toward novel correlated states and non-linear phenomena, as well as zero-magnetic-field Weyl spintronic and optical devices.

cond-mat.mes-hall↗

arXiv2024

Molecular beam epitaxy of superconducting FeSe$_{x}$Te$_{1-x}$ thin films interfaced with magnetic topological insulators

Engineering heterostructures with various types of quantum materials can provide an intriguing playground for studying exotic physics induced by the proximity effect. Here, we report the successful synthesis of iron-based superconductor FeSe$_{x}$Te$_{1-x}$ (FST) thin films across the entire composition range of $0 \leq x \leq 1$ and its heterostructure with a magnetic topological insulator by using molecular beam epitaxy. Superconductivity is observed in the FST films with an optimal superconducting transition temperature $T_c$ $\sim$ 12 K at around x = 0.1. We found that superconductivity survives in the very Te-rich films ($x \leq 0.05$), showing stark contrast to bulk crystals with suppression of superconductivity due to an appearance of bicollinear antiferromagnetism accompanied by a monoclinic structural transition. By examining thickness $t$ dependence of magnetic susceptibility and electrical transport properties, we observed a trend where anomalies associated with the first order structural transition broaden in films with below $t \sim$ 100 nm. We infer this observation suggests a suppression of the structural instability near substrates. Furthermore, we fabricated an all chalcogenide-based heterointerface between FST and a magnetic topological insulator (Cr,Bi,Sb)$_{2}$Te$_{3}$ for the first time, observing both superconductivity and a large anomalous Hall conductivity. The anomalous Hall conductivity increases with decreasing temperature, approaching the quantized value of $e^2/h$ down to the measurable minimum temperature at $T_c$. The result suggests coexistence of magnetic and superconducting gaps at low temperatures opening at the top and bottom surfaces, respectively. Our novel magnetic topological insulator/superconductor heterostructure could be an ideal platform to explore chiral Majorana edge mode.

cond-mat.supr-con↗

arXiv2023

Gate-electric-field and magnetic-field control of versatile topological phases in a semi-magnetic topological insulator

Surface states of a topological insulator demonstrate interesting quantum phenomena, such as the quantum anomalous Hall (QAH) effect and the quantum magnetoelectric effect. Fermi energy tuning plays a role in inducing phase transitions and developing future device functions. Here, we report on controlling the topological phases in a dual-gate field-effect transistor of a semi-magnetic topological insulator heterostructure. The heterostructure consists of magnetized one-surface and non-magnetic other-surface. By tuning the Fermi energy to the energy gap of the magnetized surface, the Hall conductivity $σ_{xy}$ becomes close to the half-integer quantized Hall conductivity $e^2/2h$, exemplifying parity anomaly. The dual-gate control enables the band structure alignment to the two quantum Hall states with $σ_{xy} = e^2/h$ and 0 under a strong magnetic field. These states are topologically equivalent to the QAH and axion insulator states, respectively. Precise and independent control of the band alignment of the top and bottom surfaces successively induces various topological phase transitions among the QAH, axion insulator, and parity anomaly states in magnetic topological insulators.

cond-mat.mes-hall↗

arXiv2022

Nonreciprocal electrical transport in multiferroic semiconductor (Ge,Mn)Te

We have investigated the nonreciprocal electrical transport, that is a nonlinear resistance effect depending on the current direction, in multiferroic Rashba semiconductor (Ge,Mn)Te. Due to coexistence of ferromagnetic and ferroelectric orders, (Ge,Mn)Te provides a unique platform for exploring the nonreciprocal electrical transport in a bulk form. (Ge,Mn)Te thin films shows a large nonreciprocal resistance compared to GeTe, the nonmagnetic counterpart with the same crystal structure. The magnetic-field-angle dependence of the nonreciprocal resistance is maximized when magnetic field is orthogonal to both current and electric polarization, in accord with the symmetry argument. From the analysis of temperature and magnetic field dependence, we deduce that inelastic scatterings of electrons mediated by magnons dominantly contribute to the observed nonreciprocal response. Furthermore, the nonreciprocal resistance is significantly enhanced by lowering hole density. The Fermi level dependence is attributed to the deformation of the Rashba band in which the spin-momentum locked single Fermi surface appears by exchange field from the in-plane magnetization. The present study provides a key insight to the mechanisms of novel transport phenomena caused by the interplay of ferroelectric and ferromagnetic orders in a semiconductor.

cond-mat.mtrl-sci↗

arXiv2021

Versatile electronic states in epitaxial thin films of (Sn-Pb-In)Te: from topological crystalline insulator and polar semimetal to superconductor

Epitaxial thin films of (Sn$_{x}$Pb$_{1-x}$)$_{1-y}$In$_{y}$Te were successfully grown by molecular-beam-epitaxy (MBE) in a broad range of compositions (0 $\leq$ x $\leq$ 1, 0 $\leq$ y $\leq$ 0.23). We investigated electronic phases of the films by the measurements of electrical transport and optical second harmonic generation. In this system, one can control the inversion of band gap, the electric polarization that breaks the inversion symmetry, and the Fermi level position by tuning the Pb/Sn ratio and In composition. A plethora of topological electronic phases are expected to emerge, such as topological crystalline insulator, topological semimetal, and superconductivity. For the samples with large Sn compositions (x > 0.5), hole density increases with In composition (y), which results in the appearance of superconductivity. On the other hand, for those with small Sn compositions (x < 0.5), increase in In composition reduces the hole density and changes the carrier type from p-type to n-type. In a narrow region centered at (x, y) = (0.16, 0.07) where the n-type carriers are slightly doped, charge transport with high mobility exceeding 5,000 cm$^{2}$V$^{-1}$s$^{-1}$ shows up, representing the possible semimetal states. In those samples, the optical second harmonic generation measurement shows the breaking of inversion symmetry along the out-of-plane [111] direction, which ensures the presence of polar semimetal state. The thin films of (Sn$_{x}$Pb$_{1-x}$)$_{1-y}$In$_{y}$Te materials systems with a variety of electronic states would become a promising materials platform for the exploration of novel quantum phenomena.

cond-mat.mtrl-sci↗

arXiv2020

Current scaling of the topological quantum phase transition between a quantum anomalous Hall insulator and a trivial insulator

We report a current scaling study of a quantum phase transition between a quantum anomalous Hall insulator and a trivial insulator on the surface of a heterostructure film of magnetic topological insulators. The transition was observed by tilting the magnetization while measuring the Hall conductivity $σ_{xy}$. The transition curves of $σ_{xy}$ taken under various excitation currents cross each other at a single point, exemplifying a quantum critical behavior of the transition. The slopes of the transition curves follow a power law dependence of the excitation current, giving a scaling exponent. Combining with the result of the previous temperature scaling study, critical exponents $ν$ for the localization length and $p$ for the coherence length are separately evaluated as $ν$ = 2.8 $\pm$ 0.3 and $p$ = 3.3 $\pm$ 0.3.

cond-mat.mes-hall↗

arXiv2019

Quantum anomalous Hall effect driven by magnetic proximity coupling in all-telluride based heterostructure

The quantum anomalous Hall effect (QAHE) is an exotic quantum phenomenon originating from dissipation-less chiral channels at the sample edge. While the QAHE has been observed in magnetically doped topological insulators (TIs), exploiting magnetic proximity effect on the TI surface from adjacent ferromagnet layers may provide an alternative approach to the QAHE by opening an exchange gap with less disorder than that in the doped system. Nevertheless, the engineering of a favorable heterointerface that realizes the QAHE based on the magnetic proximity effect remains to be achieved. Here, we report on the observation of the QAHE in a proximity coupled system of non-magnetic TI and ferromagnetic insulator (FMI). We have designed sandwich heterostructures of (Zn,Cr)Te/(Bi,Sb)2Te3/(Zn,Cr)Te that fulfills two prerequisites for the emergence of the QAHE; the formation of a sizable exchange gap at the TI surface state and the tuning of the Fermi energy into the exchange gap. The efficient proximity coupling in the all-telluride based heterostructure as demonstrated here will enable a realistic design of versatile tailor-made topological materials coupled with ferromagnetism, ferroelectricity, superconductivity, and so on.

cond-mat.mes-hall↗

arXiv2019

Large Anomalous Hall Effect in Topological Insulators with Proximitized Ferromagnetic Insulators

We report a proximity-driven large anomalous Hall effect in all-telluride heterostructures consisting of ferromagnetic insulator Cr2Ge2Te6 and topological insulator (Bi,Sb)2Te3. Despite small magnetization in the (Bi,Sb)2Te3 layer, the anomalous Hall conductivity reaches a large value of 0.2e2/h in accord with a ferromagnetic response of the Cr2Ge2Te6. The results show that the exchange coupling between the surface state of the topological insulator and the proximitized Cr2Ge2Te6 layer is effective and strong enough to open the sizable exchange gap in the surface state.

cond-mat.mes-hall↗

arXiv2018

Topological quantum phase transition in magnetic topological insulator upon magnetization rotation

We report a continuous phase transition between quantum-anomalous-Hall and trivial-insulator phases in a magnetic topological insulator upon magnetization rotation. The Hall conductivity transits from one plateau of quantized Hall conductivity $e^2/h$ to the other plateau of zero Hall conductivity. The transition curves taken at various temperatures cross almost at a single point, exemplifying the critical behavior of the transition. The slope of the transition curves follows a power-law temperature dependence with a critical exponent of $-0.61$. This suggests a common underlying origin in the plateau transitions between the QAH and quantum Hall systems, which is a percolation of one-dimensional chiral edge channels.

cond-mat.mes-hall↗

arXiv2017

Current-driven instability of quantum anomalous Hall effect in ferromagnetic topological insulators

Instability of quantum anomalous Hall (QAH) effect has been studied as function of electric current and temperature in ferromagnetic topological insulator thin films. We find that a characteristic current for the breakdown of the QAH effect is roughly proportional to the Hall-bar width, indicating that Hall electric field is relevant to the breakdown. We also find that electron transport is dominated by variable range hopping (VRH) at low temperatures. Combining the current and temperature dependences of the conductivity in the VRH regime, the localization length of the QAH state is evaluated to be about 5 $μ$m. The long localization length suggests a marginally insulating nature of the QAH state due to a large number of in-gap states.

cond-mat.mes-hall↗