SearcharxivSearch

arXiv subjects

S. A. Sato

Publications and source records attributed to S. A. Sato.

15 recordsLinked to original sources

Ultrafast electron localization and screening in a transition metal dichalcogenide

The coupling of light to electrical charge carriers in semiconductors is the foundation of many technological applications. Attosecond transient absorption spectroscopy measures simultaneously how excited electrons and the vacancies they leave behind dynamically react to the applied optical fields. In compound semiconductors, these dynamics can be probed via any of their atomic constituents. Often, the atomic species forming the compound contribute comparably to the relevant electronic properties of the material. One therefore expects to observe similar dynamics, irrespective of the choice of atomic species via which it is probed. Here, we show in the two-dimensional transition metal dichalcogenide semiconductor $MoSe_2$, that through a selenium-based transition we observe charge carriers acting independently from each other, while when probed through molybdenum, the collective, many-body motion of the carriers dominates. Such unexpectedly contrasting behavior can be traced back to a strong localization of electrons around molybdenum atoms following absorption of light, which modifies the local fields acting on the carriers. We show that similar behavior in elemental titanium metal carries over to transition metal-containing compounds and is expected to play an essential role for a wide range of such materials. Knowledge of independent particle and collective response is essential for fully understanding these materials.

cond-mat.mtrl-sci

On the survival of Floquet-Bloch states in the presence of scattering

Floquet theory has spawned many exciting possibilities for electronic structure control with light with enormous potential for future applications. The experimental realization in solids, however, largely remains pending. In particular, the influence of scattering on the formation of Floquet-Bloch states remains poorly understood. Here we combine time- and angle-resolved photoemission spectroscopy with time-dependent density functional theory and a two-level model with relaxation to investigate the survival of Floquet-Bloch states in the presence of scattering. We find that Floquet-Bloch states will be destroyed if scattering -- activated by electronic excitations -- prevents the Bloch electrons from following the driving field coherently. The two-level model also shows that Floquet-Bloch states reappear at high field intensities where energy exchange with the driving field dominates over energy dissipation to the bath. Our results clearly indicate the importance of long scattering times combined with strong driving fields for the successful realization of various Floquet phenomena.

cond-mat.mtrl-sci

Floquet dynamics in light-driven solids

We demonstrate how the properties of light-induced electronic Floquet states in solids impact natural physical observables, such as transport properties, by capturing the environmental influence on the electrons. We include the environment as dissipative processes, such as inter-band decay and dephasing, often ignored in Floquet predictions. These dissipative processes determine the Floquet band occupations of the emergent steady state, by balancing out the optical driving force. In order to benchmark and illustrate our framework for Floquet physics in a realistic solid, we consider the light-induced Hall conductivity in graphene recently reported by J.~W.~McIver, et al., Nature Physics (2020). We show that the Hall conductivity is estimated by the Berry flux of the occupied states of the light-induced Floquet bands, in addition to the kinetic contribution given by the average band velocity. Hence, Floquet theory provides an interpretation of this Hall conductivity as a geometric-dissipative effect. We demonstrate this mechanism within a master equation formalism, and obtain good quantitative agreement with the experimentally measured Hall conductivity, underscoring the validity of this approach which establishes a broadly applicable framework for the understanding of ultrafast non-equilibrium dynamics in solids.

cond-mat.mes-hall

Floquet states in dissipative open quantum systems

We theoretically investigate basic properties of nonequilibrium steady states of periodically-driven open quantum systems based on the full solution of the Maxwell-Bloch equation. In a resonantly driving condition, we find that the transverse relaxation, also known as decoherence, significantly destructs the formation of Floquet states while the longitudinal relaxation does not directly affect it. Furthermore, by evaluating the quasienergy spectrum of the nonequilibrium steady states, we demonstrate that the Rabi splitting can be observed as long as the decoherence time is as short as one third of the Rabi-cycle. Moreover, we find that Floquet states can be formed even under significant dissipation when the decoherence time is substantially shorter than the cycle of driving, once the driving field strength becomes strong enough. In an off-resonant condition, we demonstrate that the Floquet states can be realized even in weak field regimes because the system is not excited and the decoherence mechanism is not activated. Once the field strength becomes strong enough, the system can be excited by nonlinear processes and the decoherence process becomes active. As a result, the Floquet states are significantly disturbed by the environment even in the off-resonant condition. Thus, we show here that the suppression of heating is a key condition for the realization of Floquet states in both on and off-resonant conditions not only because it prevents material damage but also because it contributes to preserving coherence.

cond-mat.mes-hall

Light-induced anomalous Hall effect in massless Dirac fermion systems and topological insulators with dissipation

Employing the quantum Liouville equation with phenomenological dissipation, we investigate the transport properties of massless and massive Dirac fermion systems that mimics graphene and topological insulators, respectively. The massless Dirac fermion system does not show an intrinsic Hall effect, but it shows a Hall current under the presence of circularly-polarized laser fields as a nature of a optically-driven nonequilibrium state. Based on the microscopic analysis, we find that the light-induced Hall effect mainly originates from the imbalance of photocarrier distribution in momentum space although the emergent Floquet-Berry curvature also has a non-zero contribution. We further compute the Hall transport property of the massive Dirac fermion system with an intrinsic Hall effect in order to investigate the interplay of the intrinsic topological contribution and the extrinsic light-induced population contribution. As a result, we find that the contribution from the photocarrier population imbalance becomes significant in the strong field regime and it overcomes the intrinsic contribution. This finding clearly demonstrates that intrinsic transport properties of materials can be overwritten by external driving and may open a way to ultrafast optical-control of transport properties of materials.

cond-mat.mes-hall

Microscopic theory for the light-induced anomalous Hall effect in graphene

We employ a quantum Liouville equation with relaxation to model the recently observed anomalous Hall effect in graphene irradiated by an ultrafast pulse of circularly polarized light. In the weak-field regime, we demonstrate that the Hall effect originates from an asymmetric population of photocarriers in the Dirac bands. By contrast, in the strong-field regime, the system is driven into a non-equilibrium steady state that is well-described by topologically non-trivial Floquet-Bloch bands. Here, the anomalous Hall current originates from the combination of a population imbalance in these dressed bands together with a smaller anomalous velocity contribution arising from their Berry curvature. This robust and general finding enables the simulation of electrical transport from light-induced Floquet-Bloch bands in an experimentally relevant parameter regime and creates a pathway to designing ultrafast quantum devices with Floquet-engineered transport properties.

cond-mat.mes-hall

Attosecond screening dynamics mediated by electron-localization

Transition metals with their densely confined and strongly coupled valence electrons are key constituents of many materials with unconventional properties, such as high-Tc superconductors, Mott insulators and transition-metal dichalcogenides. Strong electron interaction offers a fast and efficient lever to manipulate their properties with light, creating promising potential for next-generation electronics. However, the underlying dynamics is a fast and intricate interplay of polarization and screening effects, which is poorly understood. It is hidden below the femtosecond timescale of electronic thermalization, which follows the light-induced excitation. Here, we investigate the many-body electron dynamics in transition metals before thermalization sets in. We combine the sensitivity of intra-shell transitions to screening effects with attosecond time resolution to uncover the interplay of photo-absorption and screening. First-principles time-dependent calculations allow us to assign our experimental observations to ultrafast electronic localization on d-orbitals. The latter modifies the whole electronic structure as well as the collective dynamic response of the system on a timescale much faster than the light-field cycle. Our results demonstrate a possibility for steering the electronic properties of solids prior to electron thermalization, suggesting that the ultimate speed of electronic phase transitions is limited only by the duration of the controlling laser pulse. Furthermore, external control of the local electronic density serves as a fine tool for testing state-of-the art models of electron-electron interactions. We anticipate our study to facilitate further investigations of electronic phase transitions, laser-metal interactions and photo-absorption in correlated electron systems on its natural timescale.

physics.atom-ph

Charge density wave melting in one-dimensional wires with femtosecond sub-gap excitation

Charge density waves (CDWs) are symmetry-broken ground states that commonly occur in low-dimensional metals due to strong electron-electron and/or electron-phonon coupling. The non-equilibrium carrier distribution established via photodoping with femtosecond laser pulses readily quenches these ground states and induces an ultrafast insulator-to-metal phase transition. To date, CDW melting has been mainly investigated in the single-photon and tunneling regimes, while the intermediate multi-photon regime has received little attention. Here we excite one-dimensional indium wires with a CDW gap of ~300meV with mid-infrared pulses at 190meV with MV/cm field strength and probe the transient electronic structure with time- and angle-resolved photoemission spectroscopy (tr-ARPES). We find that the CDW gap is filled on a timescale short compared to our temporal resolution of 300fs and that the phase transition is completed within ~1ps. Supported by a minimal theoretical model we attribute our findings to multi-photon absorption across the CDW gap.

cond-mat.mtrl-sci

Velocity-gauge real-time TDDFT within a numerical atomic orbital basis set

The interaction of laser fields with solid-state systems can be modeled efficiently within the velocity-gauge formalism of real-time time dependent density functional theory (RT-TDDFT). In this article, we discuss the implementation of the velocity-gauge RT-TDDFT equations for electron dynamics within a linear combination of atomic orbitals (LCAO) basis set framework. Numerical results obtained from our LCAO implementation, for the electronic response of periodic systems to both weak and intense laser fields, are compared to those obtained from established real-space grid and Full-Potential Linearized Augumented Planewave approaches. Potential applications of the LCAO based scheme in the context of extreme ultra-violet and soft X-ray spectroscopies involving core-electronic excitations are discussed.

cond-mat.mtrl-sci

Theory for the electron excitation in dielectrics under an intense circularly polarized laser field

We report a Keldysh-like model for the electron transition rate in dielectrics under an intense circularly polarized laser. We assume a parabolic two-band system and the Houston function as the time-dependent wave function of the valence and conduction bands. Our formula reproduces the experimental result for the ratio of the excitation rate between linear and circular polarizations for $α$-quartz. This formula can be easily introduced into simulations of nanofabrication using an intense circularly polarized laser.

cond-mat.mes-hall

Femtosecond time-resolved dynamical Franz-Keldysh effect

We theoretically investigate the dynamical Franz-Keldysh effect in femtosecond time resolution, that is, the time-dependent modulation of a dielectric function at around the band gap under an irradiation of an intense laser field. We develop a pump-probe formalism in two distinct approaches: first-principles simulation based on real-time time-dependent density functional theory and analytic consideration of a simple two-band model. We find that, while time-average modulation may be reasonably described by the static Franz-Keldysh theory, a remarkable phase shift is found to appear between the dielectric response and the applied electric field.

cond-mat.mtrl-sci

Time-dependent density functional theory of high-intensity, short-pulse laser irradiation on insulators

We calculate the energy deposition by very short laser pulses in SiO_2 (alpha-quartz) with a view to establishing systematics for predicting damage and nanoparticle production. The theoretical framework is time-dependent density functional theory, implemented by the real-time method in a multiscale representation. For the most realistic simulations we employ a meta-GGA Kohn-Sham potential similar to that of Becke and Johnson. We find that the deposited energy in the medium can be accurately modeled as a function of the local electromagnetic pulse fluence. The energy-deposition function can in turn be quite well fitted to the strong-field Keldysh formula for a range of intensities from below the melting threshold to well beyond the ablation threshold. We find reasonable agreement between the damage threshold and the energy required to melt the substrate. The ablation threshold estimated by the energy to convert the substrate to an atomic fluid is higher than the measurement, indicating significance of nonthermal nature of the process. A fair agreement is found for the depth of the ablation.

cond-mat.mtrl-sci

Dielectric response of laser-excited silicon at finite electron temperature

We calculate the dielectric response of excited crystalline silicon in electron thermal equilibrium by adiabatic time-dependent density functional theory (TDDFT) to model the response to irradiation by high-intensity laser pulses. The real part of the dielectric function is characterized by the strong negative behavior at low frequencies due to excited electron-hole pairs. The response agrees rather well with the numerical pump-probe calculations which simulate electronic excitations in nonequilibrium phase immediately after the laser pulse irradiation. The thermal response is also compared with the Drude model which includes electron effective mass and collision time as fitting parameters. We find that the extracted effective masses are in the range of 0.22-0.36 and lifetimes are in the range of 1-14 fs depending on the temperature. The short Drude lifetimes show that strong damping is possible in the adiabatic TDDFT, despite the absence of explicit electron-electron collisions.

cond-mat.mtrl-sci

Dielectric response of laser-excited silicon

We calculate the dielectric response of crystalline silicon following irradiation by a high-intensity laser pulse, modeling the dynamics by time-dependent density functional theory (TDDFT). The pump-probe measurements are numerically simulated by solving the time-dependent Kohn-Sham equation with the pump and probe fields included as external fields. As expected, the excited silicon shows features of a particle-hole plasma in its response. We compare the calculated response with a thermal model and with a simple Drude model. The thermal model requires only a static DFT calculation to prepare electronically excited matter and agrees rather well with the TDDFT for the same particle-hole density. The Drude model with two fitted parameters (electron effective mass and collision time) also shows fair agreement at the lower excitation energies; the fitted effective masses are consistent with carrier-band dispersions. The extracted Drude lifetimes range from 6 fs at weak pumping fields to much lower values at high fields. However, we find that the Drude model does not give a good fit to the imaginary dielectric function at the highest fields. Comparing the thermal model with the Drude, we find that the extracted lifetimes are in the same range, 1-13 fs depending on the temperature. These short Drude lifetimes show that strong damping is possible in the TDDFT, despite the absence of electron scattering. One significant difference between the TDDFT response and the other models is that the response to the probe pulse depends on the polarization of the pump pulse. We also find that the imaginary part of the dielectric function can be negative, particularly for the parallel polarization of pump and probe fields.

cond-mat.mtrl-sci

Nonadiabatic generation of coherent phonons

The time-dependent density functional theory (TDDFT) is the leading computationally feasible theory to treat excitations by strong electromagnetic fields. Here the theory is applied to coherent optical phonon generation produced by intense laser pulses. We examine the process in the crystalline semimetal antimony (Sb), where nonadiabatic coupling is very important. This material is of particular interest because it exhibits strong phonon coupling and optical phonons of different symmetries can be observed. The TDDFT is able to account for a number of qualitative features of the observed coherent phonons, despite its unsatisfactory performance on reproducing the observed dielectric functions of Sb. A simple dielectric model for nonadiabatic coherent phonon generation is also examined and compared with the TDDFT calculations.

cond-mat.mtrl-sci